JP5551602B2 - マスター型複製方法 - Google Patents
マスター型複製方法 Download PDFInfo
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- JP5551602B2 JP5551602B2 JP2010532264A JP2010532264A JP5551602B2 JP 5551602 B2 JP5551602 B2 JP 5551602B2 JP 2010532264 A JP2010532264 A JP 2010532264A JP 2010532264 A JP2010532264 A JP 2010532264A JP 5551602 B2 JP5551602 B2 JP 5551602B2
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- mold
- metal layer
- silicone
- daughter
- ductile metal
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- 230000003362 replicative effect Effects 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001494 step-and-flash imprint lithography Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- MNTALGTVSQTALQ-UHFFFAOYSA-N trihydroxy(trimethylsilyloxy)silane Chemical compound C[Si](C)(C)O[Si](O)(O)O MNTALGTVSQTALQ-UHFFFAOYSA-N 0.000 description 1
- PZJJKWKADRNWSW-UHFFFAOYSA-N trimethoxysilicon Chemical group CO[Si](OC)OC PZJJKWKADRNWSW-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98461607P | 2007-11-01 | 2007-11-01 | |
| US60/984,616 | 2007-11-01 | ||
| PCT/US2008/081928 WO2009059089A1 (en) | 2007-11-01 | 2008-10-31 | Method for replicating master molds |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011502817A JP2011502817A (ja) | 2011-01-27 |
| JP2011502817A5 JP2011502817A5 (https=) | 2011-10-06 |
| JP5551602B2 true JP5551602B2 (ja) | 2014-07-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010532264A Expired - Fee Related JP5551602B2 (ja) | 2007-11-01 | 2008-10-31 | マスター型複製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20110104321A1 (https=) |
| EP (1) | EP2212745A1 (https=) |
| JP (1) | JP5551602B2 (https=) |
| CN (1) | CN101910942B (https=) |
| WO (1) | WO2009059089A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110055586A (ko) * | 2008-08-05 | 2011-05-25 | 스몰텍 에이비 | 템플레이트 및 리소그래피용 고종횡비 템플레이트의 제조방법과 나노스케일로 기판을 천공하기 위한 템플레이트의 용도 |
| US20110120626A1 (en) * | 2009-11-20 | 2011-05-26 | Chung-Ping Lai | Method of producing ultra fine surfacing bulk substrate |
| EP2565014A4 (en) * | 2010-06-23 | 2015-01-21 | Nippon Soda Co | METHOD FOR PRODUCING A PRINTING FORM FOR MOLDING |
| KR20130091313A (ko) * | 2010-07-12 | 2013-08-16 | 아사히 가라스 가부시키가이샤 | 임프린트 몰드용 TiO₂함유 석영 유리 기재 및 그 제조 방법 |
| US8816211B2 (en) * | 2011-02-14 | 2014-08-26 | Eastman Kodak Company | Articles with photocurable and photocured compositions |
| CN102193126B (zh) * | 2011-05-26 | 2012-08-29 | 中国科学院上海光学精密机械研究所 | 宽带低电场增强反射金属介电光栅 |
| CN105093824B (zh) * | 2015-08-31 | 2019-05-07 | 西安交通大学 | 一种气电协同的大面积纳米压印光刻方法 |
| EP3377290B1 (en) * | 2015-11-22 | 2023-08-02 | Orbotech Ltd. | Control of surface properties of printed three-dimensional structures |
| CN110997266B (zh) * | 2017-06-29 | 2022-04-26 | 埃肯有机硅法国简易股份公司 | 有机硅弹性体制模具的制造方法 |
| KR102620913B1 (ko) | 2017-08-24 | 2024-01-05 | 다우 글로벌 테크놀로지스 엘엘씨 | 광학 도파관 제작 방법 |
| WO2019084770A1 (zh) * | 2017-10-31 | 2019-05-09 | 香港科技大学 | 具有表面微纳结构的金属薄膜模具的制备方法和金属薄膜模具中间体 |
| EP3670440B1 (fr) | 2018-12-21 | 2025-04-09 | Rolex Sa | Procédé de fabrication d'un composant horloger |
| EP3670441B1 (fr) * | 2018-12-21 | 2025-04-09 | Rolex Sa | Procédé de fabrication d'un composant horloger |
| CN112776495B (zh) * | 2020-12-16 | 2022-03-18 | 维达力实业（赤壁）有限公司 | Uv转印模具的修复方法及uv转印模具 |
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| US2843555A (en) * | 1956-10-01 | 1958-07-15 | Gen Electric | Room temperature curing organopolysiloxane |
| GB923710A (en) * | 1960-11-07 | 1963-04-18 | Ici Ltd | Production of organosilicon compounds |
| US3159662A (en) * | 1962-07-02 | 1964-12-01 | Gen Electric | Addition reaction |
| US3220972A (en) * | 1962-07-02 | 1965-11-30 | Gen Electric | Organosilicon process using a chloroplatinic acid reaction product as the catalyst |
| US3410886A (en) * | 1965-10-23 | 1968-11-12 | Union Carbide Corp | Si-h to c=c or c=c addition in the presence of a nitrile-platinum (ii) halide complex |
| US3313773A (en) * | 1965-12-03 | 1967-04-11 | Gen Electric | Platinum addition catalyst system |
| AT278040B (de) * | 1966-12-16 | 1970-01-26 | Degussa | Verfahren zur Herstellung von Organosiliziumverbindungen |
| DE1259888B (de) * | 1967-05-27 | 1968-02-01 | Bayer Ag | Verfahren zur Herstellung von Organosiliciumverbindungen |
| US3814730A (en) * | 1970-08-06 | 1974-06-04 | Gen Electric | Platinum complexes of unsaturated siloxanes and platinum containing organopolysiloxanes |
| US3715334A (en) * | 1970-11-27 | 1973-02-06 | Gen Electric | Platinum-vinylsiloxanes |
| US3775452A (en) * | 1971-04-28 | 1973-11-27 | Gen Electric | Platinum complexes of unsaturated siloxanes and platinum containing organopolysiloxanes |
| NL7207442A (https=) * | 1971-06-25 | 1972-12-28 | ||
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| FR2575086B1 (fr) * | 1984-12-20 | 1987-02-20 | Rhone Poulenc Spec Chim | Complexe platine-alcenylcyclohexene comme catalyseur de reaction d'hydrosilylation et son procede de preparation |
| US4705765A (en) * | 1985-12-19 | 1987-11-10 | General Electric Company | Hydrosilylation catalyst, method for making and use |
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| US6692680B2 (en) * | 2001-10-03 | 2004-02-17 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Reproduction of micromold inserts |
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| JP4628715B2 (ja) * | 2004-07-13 | 2011-02-09 | 信越化学工業株式会社 | 硬化性オルガノポリシロキサン組成物および注型成形用母型 |
| US7891636B2 (en) * | 2007-08-27 | 2011-02-22 | 3M Innovative Properties Company | Silicone mold and use thereof |
| KR20180038574A (ko) * | 2008-07-18 | 2018-04-16 | 바이오모드 컨셉츠 인코포레이티드 | 활성 성분을 방출하는 제품 |
-
2008
- 2008-10-31 CN CN2008801226192A patent/CN101910942B/zh not_active Expired - Fee Related
- 2008-10-31 JP JP2010532264A patent/JP5551602B2/ja not_active Expired - Fee Related
- 2008-10-31 EP EP08843712A patent/EP2212745A1/en not_active Withdrawn
- 2008-10-31 US US12/673,549 patent/US20110104321A1/en not_active Abandoned
- 2008-10-31 WO PCT/US2008/081928 patent/WO2009059089A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011502817A (ja) | 2011-01-27 |
| WO2009059089A1 (en) | 2009-05-07 |
| CN101910942B (zh) | 2013-11-20 |
| EP2212745A1 (en) | 2010-08-04 |
| CN101910942A (zh) | 2010-12-08 |
| US20110104321A1 (en) | 2011-05-05 |
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