JP5549532B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5549532B2 JP5549532B2 JP2010236389A JP2010236389A JP5549532B2 JP 5549532 B2 JP5549532 B2 JP 5549532B2 JP 2010236389 A JP2010236389 A JP 2010236389A JP 2010236389 A JP2010236389 A JP 2010236389A JP 5549532 B2 JP5549532 B2 JP 5549532B2
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- 239000004065 semiconductor Substances 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000009792 diffusion process Methods 0.000 claims description 65
- 238000000926 separation method Methods 0.000 claims description 52
- 238000005468 ion implantation Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 30
- 238000000137 annealing Methods 0.000 claims description 25
- 238000001994 activation Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 22
- 230000004913 activation Effects 0.000 claims description 20
- 238000001312 dry etching Methods 0.000 claims description 11
- 238000011282 treatment Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 152
- 230000000149 penetrating effect Effects 0.000 description 70
- 230000002441 reversible effect Effects 0.000 description 67
- 230000000903 blocking effect Effects 0.000 description 44
- 229910052796 boron Inorganic materials 0.000 description 36
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 33
- 238000005530 etching Methods 0.000 description 32
- 238000002955 isolation Methods 0.000 description 22
- 230000015556 catabolic process Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 230000007547 defect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000005224 laser annealing Methods 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000003513 alkali Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005336 cracking Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- -1 boron ion Chemical class 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Element Separation (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
以上説明した本発明の実施例1にかかる非貫通V字溝を有する逆阻止型IGBTでは、組み立て時に半田接合による熱履歴を受ける際に生じ易い、非貫通V字溝の4隅コーナー部への応力集中が緩和されるので、基板厚さの薄い4隅コーナー部への応力集中によるチップの割れカケ、半導体特性の劣化等を抑制することができる。
前記実施例1に記載の方法と同様に非貫通V字溝21bを形成し、レーザー照射により非貫通V字溝21bの側辺面9cの下部の面取り処理を行った後に、イオン注入と活性化を行う。その活性化方法として、実施例2では実施例1のレーザーアニールとは異なり、低温アニール(以下アニールを活性化の意味で用いる)を実施する。イオン注入はボロンを、ドーズ量1×1014(cm−2)/50keVの条件で行い、低温での炉アニール条件は380℃、1時間で行なう。この温度は、450℃付近での酸素のドナー化による特性悪化を考慮して、450℃を避けるようにして決められた温度である。
2 酸化膜
3 開口部
4 p型拡散層
4a、4b 分離層
6 p型コレクタ層
7 コレクタ電極
10 M0Sゲート構造
15 n型エミッタ領域
16 p型ベース領域
17 ゲート電極
18 エミッタ電極
19 絶縁膜
20 実装基板
21a 貫通V字溝
12b 非貫通V字溝
22 半田
23 (100)面
30b 逆阻止IGBT
31 p型拡散層
32 レジストマスク
Claims (4)
- (100)面を主面とする第1導電型半導体基板の一方の主面に、格子状の平面パターンの第2導電型拡散層を形成する第1工程と、他方の主面に、前記格子状の平面パターンと同ピッチの格子状の平面パターンで配置され、前記他方の主面に平行であって前記第2導電型拡散層が露出する底面と該底面から立ち上がるテーパー状の側辺面とを有するV字溝を異方性エッチングにより形成する第2工程と、レーザー照射または等方性ドライエッチングで前記V字溝の側辺面のコーナー部と底面との交差部近傍の面取り処理をする第3工程と、前記側辺面に沿って、前記第2導電型拡散層に一方の端部に接続する第2導電型分離層を形成するためにイオン注入する第4工程と、前記側辺面に囲まれる他方の主面に、前記側辺面の第2導電型分離層の他方の端部に接続する第2導電型半導体層を形成するためにイオン注入する第5工程と、前記第4工程と第5工程のイオン注入後の活性化処理のために、レーザー照射アニール、低温アニール、フラッシュランプアニールのうち、少なくとも一つのアニールを行う第6工程を有することを特徴とする半導体装置の製造方法。
- 前記第4工程の第2導電型半導体層と前記第5工程の第2導電型分離層形成用のイオン注入を同時に行い、該イオン注入後の活性化処理を同時に行うことを特徴とする請求項1記載の半導体装置の製造方法。
- 前記第4工程の第2導電型半導体層形成用のイオン注入後および前記第5工程の第2導電型分離層形成用のイオン注入後の活性化処理と、前記第3工程の面取り処理とをレーザー照射により同時に行うことを特徴とする請求項1記載の半導体装置の製造方法。
- 前記第4工程の第2導電型半導体層形成用のイオン注入と、前記第5工程の第2導電型分離層形成用のイオン注入とを同時に行うことを特徴とする請求項3記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010236389A JP5549532B2 (ja) | 2010-10-21 | 2010-10-21 | 半導体装置の製造方法 |
US13/276,740 US8692350B2 (en) | 2010-10-21 | 2011-10-19 | Semiconductor device and method of manufacturing the same |
CN201110340430.4A CN102456729B (zh) | 2010-10-21 | 2011-10-20 | 半导体器件及其制造方法 |
DE102011084956A DE102011084956A1 (de) | 2010-10-21 | 2011-10-21 | Halbleiterbauelement und Verfahren zu dessen Herstellung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010236389A JP5549532B2 (ja) | 2010-10-21 | 2010-10-21 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014075312A Division JP2014143435A (ja) | 2014-04-01 | 2014-04-01 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012089735A JP2012089735A (ja) | 2012-05-10 |
JP5549532B2 true JP5549532B2 (ja) | 2014-07-16 |
Family
ID=45923405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010236389A Expired - Fee Related JP5549532B2 (ja) | 2010-10-21 | 2010-10-21 | 半導体装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8692350B2 (ja) |
JP (1) | JP5549532B2 (ja) |
CN (1) | CN102456729B (ja) |
DE (1) | DE102011084956A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103489820B (zh) * | 2013-09-29 | 2016-06-22 | 武汉新芯集成电路制造有限公司 | 一种器件隔离的方法 |
CN104992966B (zh) * | 2015-05-21 | 2017-10-24 | 中国电子科技集团公司第十三研究所 | 一种热预算低的双极高频功率晶体管芯片的制作方法 |
US9759868B2 (en) | 2015-11-05 | 2017-09-12 | International Business Machines Corporation | Structures for preventing dicing damage |
JP2017157763A (ja) * | 2016-03-04 | 2017-09-07 | サンケン電気株式会社 | 半導体装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61296721A (ja) * | 1985-06-26 | 1986-12-27 | Toshiba Corp | 単結晶シリコンの微細加工方法 |
JPS63241937A (ja) | 1987-03-30 | 1988-10-07 | Olympus Optical Co Ltd | 固体撮像装置 |
US4904609A (en) * | 1988-05-06 | 1990-02-27 | General Electric Company | Method of making symmetrical blocking high voltage breakdown semiconductor device |
JP3351053B2 (ja) | 1993-10-19 | 2002-11-25 | 株式会社豊田自動織機 | 電子部品 |
ATE363030T1 (de) * | 1999-02-23 | 2007-06-15 | Matsushita Electric Works Ltd | Mikroaktuator |
JP4244456B2 (ja) * | 1999-08-04 | 2009-03-25 | 株式会社デンソー | 半導体装置の製造方法、絶縁ゲート型バイポーラトランジスタの製造方法及び絶縁ゲート型バイポーラトランジスタ |
JP4696337B2 (ja) | 1999-10-15 | 2011-06-08 | 富士電機システムズ株式会社 | 半導体装置 |
JP4788028B2 (ja) | 2000-08-28 | 2011-10-05 | 富士電機株式会社 | 逆阻止型igbtを逆並列に接続した双方向igbt |
JP2003174158A (ja) * | 2001-12-07 | 2003-06-20 | Sony Corp | 半導体装置の製造方法 |
US20040075160A1 (en) | 2002-10-18 | 2004-04-22 | Jack Eng | Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation |
JP2004289047A (ja) | 2003-03-25 | 2004-10-14 | Toyoda Gosei Co Ltd | 半導体発光素子及びその製造方法 |
JP4747260B2 (ja) | 2003-04-16 | 2011-08-17 | 富士電機株式会社 | 逆阻止型絶縁ゲート形バイポーラトランジスタの製造方法 |
JP4982948B2 (ja) | 2004-08-19 | 2012-07-25 | 富士電機株式会社 | 半導体装置の製造方法 |
JP4696595B2 (ja) * | 2005-02-28 | 2011-06-08 | ヤマハ株式会社 | 半導体ウェーハ及び半導体素子並びに半導体素子の製造方法 |
JP5082211B2 (ja) * | 2005-03-25 | 2012-11-28 | 富士電機株式会社 | 半導体装置の製造方法 |
JP5291866B2 (ja) * | 2005-05-31 | 2013-09-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2009139417A (ja) * | 2007-12-03 | 2009-06-25 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
DE112009001128T5 (de) * | 2008-05-13 | 2011-06-16 | Fuji Electric Systems Co., Ltd. | Halbleitervorrichtung und Verfahren zur Herstellung derselben |
JP5338429B2 (ja) | 2009-03-30 | 2013-11-13 | トヨタ自動車株式会社 | 筒内噴射式火花点火内燃機関 |
-
2010
- 2010-10-21 JP JP2010236389A patent/JP5549532B2/ja not_active Expired - Fee Related
-
2011
- 2011-10-19 US US13/276,740 patent/US8692350B2/en not_active Expired - Fee Related
- 2011-10-20 CN CN201110340430.4A patent/CN102456729B/zh not_active Expired - Fee Related
- 2011-10-21 DE DE102011084956A patent/DE102011084956A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP2012089735A (ja) | 2012-05-10 |
US8692350B2 (en) | 2014-04-08 |
DE102011084956A1 (de) | 2012-04-26 |
US20120098085A1 (en) | 2012-04-26 |
CN102456729B (zh) | 2016-06-15 |
CN102456729A (zh) | 2012-05-16 |
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