JP5549066B2 - リードフレーム型基板とその製造方法、及び半導体装置 - Google Patents

リードフレーム型基板とその製造方法、及び半導体装置 Download PDF

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Publication number
JP5549066B2
JP5549066B2 JP2008254312A JP2008254312A JP5549066B2 JP 5549066 B2 JP5549066 B2 JP 5549066B2 JP 2008254312 A JP2008254312 A JP 2008254312A JP 2008254312 A JP2008254312 A JP 2008254312A JP 5549066 B2 JP5549066 B2 JP 5549066B2
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JP
Japan
Prior art keywords
connection terminal
semiconductor element
lead frame
external connection
metal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008254312A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010087221A (ja
JP2010087221A5 (enExample
Inventor
健人 塚本
進 馬庭
順子 戸田
泰宏 境
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Inc filed Critical Toppan Inc
Priority to JP2008254312A priority Critical patent/JP5549066B2/ja
Priority to TW098132930A priority patent/TWI502711B/zh
Priority to KR1020117006885A priority patent/KR101602982B1/ko
Priority to PCT/JP2009/005041 priority patent/WO2010038452A1/ja
Priority to CN200980138144.0A priority patent/CN102165585B/zh
Publication of JP2010087221A publication Critical patent/JP2010087221A/ja
Priority to US13/064,205 priority patent/US8558363B2/en
Publication of JP2010087221A5 publication Critical patent/JP2010087221A5/ja
Application granted granted Critical
Publication of JP5549066B2 publication Critical patent/JP5549066B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/042—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/656—Fan-in layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07353—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/331—Shapes of die-attach connectors
    • H10W72/334—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)
JP2008254312A 2008-09-30 2008-09-30 リードフレーム型基板とその製造方法、及び半導体装置 Expired - Fee Related JP5549066B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008254312A JP5549066B2 (ja) 2008-09-30 2008-09-30 リードフレーム型基板とその製造方法、及び半導体装置
TW098132930A TWI502711B (zh) 2008-09-30 2009-09-29 導線架基板及其製造方法與半導體裝置
PCT/JP2009/005041 WO2010038452A1 (ja) 2008-09-30 2009-09-30 リードフレーム基板とその製造方法、及び半導体装置
CN200980138144.0A CN102165585B (zh) 2008-09-30 2009-09-30 引线框基板及其制造方法、半导体器件
KR1020117006885A KR101602982B1 (ko) 2008-09-30 2009-09-30 리드 프레임 기판과 그 제조 방법, 및 반도체 장치
US13/064,205 US8558363B2 (en) 2008-09-30 2011-03-10 Lead frame substrate and method of manufacturing the same, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008254312A JP5549066B2 (ja) 2008-09-30 2008-09-30 リードフレーム型基板とその製造方法、及び半導体装置

Publications (3)

Publication Number Publication Date
JP2010087221A JP2010087221A (ja) 2010-04-15
JP2010087221A5 JP2010087221A5 (enExample) 2011-08-18
JP5549066B2 true JP5549066B2 (ja) 2014-07-16

Family

ID=42073232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008254312A Expired - Fee Related JP5549066B2 (ja) 2008-09-30 2008-09-30 リードフレーム型基板とその製造方法、及び半導体装置

Country Status (6)

Country Link
US (1) US8558363B2 (enExample)
JP (1) JP5549066B2 (enExample)
KR (1) KR101602982B1 (enExample)
CN (1) CN102165585B (enExample)
TW (1) TWI502711B (enExample)
WO (1) WO2010038452A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427716B (zh) * 2010-06-04 2014-02-21 矽品精密工業股份有限公司 無載具之半導體封裝件及其製法
US8673689B2 (en) * 2011-01-28 2014-03-18 Marvell World Trade Ltd. Single layer BGA substrate process
CN102244060B (zh) * 2011-06-02 2013-09-25 日月光半导体制造股份有限公司 封装基板及其制造方法
US9142502B2 (en) * 2011-08-31 2015-09-22 Zhiwei Gong Semiconductor device packaging having pre-encapsulation through via formation using drop-in signal conduits
US8916421B2 (en) * 2011-08-31 2014-12-23 Freescale Semiconductor, Inc. Semiconductor device packaging having pre-encapsulation through via formation using lead frames with attached signal conduits
US8597983B2 (en) 2011-11-18 2013-12-03 Freescale Semiconductor, Inc. Semiconductor device packaging having substrate with pre-encapsulation through via formation
JP2014072242A (ja) 2012-09-27 2014-04-21 Rohm Co Ltd チップ部品およびその製造方法
KR101505088B1 (ko) * 2013-10-22 2015-03-23 앰코 테크놀로지 코리아 주식회사 반도체 패키지와 리드프레임 패들 구조 및 방법
JP6266351B2 (ja) * 2014-01-08 2018-01-24 新日本無線株式会社 センサ装置およびその製造方法
JP7182374B2 (ja) * 2017-05-15 2022-12-02 新光電気工業株式会社 リードフレーム及びその製造方法
JP7039245B2 (ja) * 2017-10-18 2022-03-22 新光電気工業株式会社 リードフレーム及びその製造方法と電子部品装置

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JPH09307043A (ja) * 1996-05-10 1997-11-28 Dainippon Printing Co Ltd リードフレーム部材とその製造方法、および該リードフレーム部材を用いた半導体装置
JP3642911B2 (ja) 1997-02-05 2005-04-27 大日本印刷株式会社 リードフレーム部材とその製造方法
US6281568B1 (en) * 1998-10-21 2001-08-28 Amkor Technology, Inc. Plastic integrated circuit device package and leadframe having partially undercut leads and die pad
JP3169919B2 (ja) * 1998-12-21 2001-05-28 九州日本電気株式会社 ボールグリッドアレイ型半導体装置及びその製造方法
MY133357A (en) * 1999-06-30 2007-11-30 Hitachi Ltd A semiconductor device and a method of manufacturing the same
CN1321455C (zh) * 2001-04-13 2007-06-13 雅马哈株式会社 半导体器件和封装及其制造方法
KR100908891B1 (ko) * 2001-07-09 2009-07-23 스미토모 긴조쿠 고잔 가부시키가이샤 리드 프레임 및 그 제조방법
JP2003309241A (ja) * 2002-04-15 2003-10-31 Dainippon Printing Co Ltd リードフレーム部材とリードフレーム部材の製造方法、及び該リードフレーム部材を用いた半導体パッケージとその製造方法
JP2003309242A (ja) * 2002-04-15 2003-10-31 Dainippon Printing Co Ltd リードフレーム部材とリードフレーム部材の製造方法、及び該リードフレーム部材を用いた半導体パッケージとその製造方法
AU2003235967A1 (en) * 2002-04-30 2003-11-17 Renesas Technology Corp. Semiconductor device and electronic device
KR100993579B1 (ko) * 2002-04-30 2010-11-10 르네사스 일렉트로닉스 가부시키가이샤 반도체장치 및 전자 장치
JP2006520102A (ja) * 2003-03-07 2006-08-31 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 半導体装置、半導体本体並びにその製造方法
JP2004349316A (ja) * 2003-05-20 2004-12-09 Renesas Technology Corp 半導体装置及びその製造方法
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JP4417150B2 (ja) * 2004-03-23 2010-02-17 株式会社ルネサステクノロジ 半導体装置
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Also Published As

Publication number Publication date
TWI502711B (zh) 2015-10-01
JP2010087221A (ja) 2010-04-15
KR101602982B1 (ko) 2016-03-11
US20110163435A1 (en) 2011-07-07
US8558363B2 (en) 2013-10-15
TW201021186A (en) 2010-06-01
CN102165585B (zh) 2014-03-26
CN102165585A (zh) 2011-08-24
KR20110074514A (ko) 2011-06-30
WO2010038452A1 (ja) 2010-04-08

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