JP5540689B2 - 感放射線性組成物、硬化膜及びこの形成方法 - Google Patents

感放射線性組成物、硬化膜及びこの形成方法 Download PDF

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Publication number
JP5540689B2
JP5540689B2 JP2009288504A JP2009288504A JP5540689B2 JP 5540689 B2 JP5540689 B2 JP 5540689B2 JP 2009288504 A JP2009288504 A JP 2009288504A JP 2009288504 A JP2009288504 A JP 2009288504A JP 5540689 B2 JP5540689 B2 JP 5540689B2
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Japan
Prior art keywords
radiation
sensitive composition
formula
component
oxide particles
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JP2009288504A
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English (en)
Japanese (ja)
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JP2011128469A (ja
Inventor
康伸 鈴木
二朗 上田
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JSR Corp
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JSR Corp
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Priority to JP2009288504A priority Critical patent/JP5540689B2/ja
Priority to TW099144372A priority patent/TWI505032B/zh
Priority to KR1020100129744A priority patent/KR101799102B1/ko
Priority to CN201010614014.4A priority patent/CN102147570B/zh
Publication of JP2011128469A publication Critical patent/JP2011128469A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2009288504A 2009-12-18 2009-12-18 感放射線性組成物、硬化膜及びこの形成方法 Active JP5540689B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009288504A JP5540689B2 (ja) 2009-12-18 2009-12-18 感放射線性組成物、硬化膜及びこの形成方法
TW099144372A TWI505032B (zh) 2009-12-18 2010-12-17 感放射線性組成物、透明硬化膜及其形成方法
KR1020100129744A KR101799102B1 (ko) 2009-12-18 2010-12-17 감방사선성 조성물, 경화막 및 이의 형성 방법
CN201010614014.4A CN102147570B (zh) 2009-12-18 2010-12-17 放射线敏感性组合物、固化膜及其形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009288504A JP5540689B2 (ja) 2009-12-18 2009-12-18 感放射線性組成物、硬化膜及びこの形成方法

Publications (2)

Publication Number Publication Date
JP2011128469A JP2011128469A (ja) 2011-06-30
JP5540689B2 true JP5540689B2 (ja) 2014-07-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009288504A Active JP5540689B2 (ja) 2009-12-18 2009-12-18 感放射線性組成物、硬化膜及びこの形成方法

Country Status (4)

Country Link
JP (1) JP5540689B2 (zh)
KR (1) KR101799102B1 (zh)
CN (1) CN102147570B (zh)
TW (1) TWI505032B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013182174A (ja) * 2012-03-02 2013-09-12 Toyo Ink Sc Holdings Co Ltd 感光性樹脂組成物
TWI567498B (zh) * 2012-04-06 2017-01-21 Ａｚ電子材料盧森堡有限公司 負型感光性矽氧烷組成物
JP6323225B2 (ja) 2013-11-01 2018-05-16 セントラル硝子株式会社 ポジ型感光性樹脂組成物、それを用いた膜の製造方法および電子部品
KR102300782B1 (ko) * 2014-01-24 2021-09-13 도레이 카부시키가이샤 네거티브형 감광성 수지 조성물, 그것을 경화시켜서 이루어지는 경화막과 그 제조 방법 및 그것을 구비하는 광학 디바이스, 그리고 이면 조사형 cmos 이미지 센서
EP3244262A4 (en) * 2015-01-08 2018-07-04 JSR Corporation Radiation-sensitive composition and pattern forming method
JP6715597B2 (ja) * 2015-12-29 2020-07-01 帝人株式会社 感光性樹脂組成物及び半導体デバイス製造方法
JP7275862B2 (ja) * 2018-05-29 2023-05-18 東洋インキＳｃホールディングス株式会社 成形用組成物、並びにそれを用いた成形体及び積層物

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63285538A (ja) * 1987-05-18 1988-11-22 Nippon Telegr & Teleph Corp <Ntt> パタ−ン形成材料およびそれを用いた多層配線板
JP4061749B2 (ja) * 1998-11-06 2008-03-19 Ｊｓｒ株式会社 回路基板およびその製造方法
JP2003020335A (ja) * 2001-05-01 2003-01-24 Jsr Corp ポリシロキサンおよび感放射線性樹脂組成物
JP4332360B2 (ja) * 2003-02-28 2009-09-16 大日本印刷株式会社 濡れ性パターン形成用塗工液およびパターン形成体の製造方法
JP4217886B2 (ja) * 2003-06-25 2009-02-04 Ｊｓｒ株式会社 感放射線性屈折率変化性組成物、パターン形成法および光学材料
CN1886410A (zh) * 2003-10-15 2006-12-27 Jsr株式会社 硅烷化合物、聚硅氧烷以及放射线敏感性树脂组合物
KR101221450B1 (ko) * 2005-07-19 2013-01-11 주식회사 동진쎄미켐 유무기 복합 감광성 수지 조성물
JP4765820B2 (ja) * 2006-08-03 2011-09-07 東レ株式会社 感光性ペーストおよびそれを用いた電子部品の製造方法
JP2009237294A (ja) * 2008-03-27 2009-10-15 The Inctec Inc ブラックマトリクス形成用感光性樹脂組成物
JP5344843B2 (ja) * 2008-03-31 2013-11-20 富士フイルム株式会社 重合性組成物および固体撮像素子

Also Published As

Publication number Publication date
TW201131302A (en) 2011-09-16
CN102147570A (zh) 2011-08-10
CN102147570B (zh) 2014-07-09
TWI505032B (zh) 2015-10-21
KR20110070815A (ko) 2011-06-24
JP2011128469A (ja) 2011-06-30
KR101799102B1 (ko) 2017-11-17

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