JP5525166B2 - 液晶表示装置及びその製造方法、電子機器 - Google Patents

液晶表示装置及びその製造方法、電子機器 Download PDF

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Publication number
JP5525166B2
JP5525166B2 JP2009040576A JP2009040576A JP5525166B2 JP 5525166 B2 JP5525166 B2 JP 5525166B2 JP 2009040576 A JP2009040576 A JP 2009040576A JP 2009040576 A JP2009040576 A JP 2009040576A JP 5525166 B2 JP5525166 B2 JP 5525166B2
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Prior art keywords
film
etching
conductive film
resist mask
display device
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JP2009040576A
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JP2009230128A5 (enExample
JP2009230128A (ja
Inventor
茂樹 小森
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2009040576A 2008-02-27 2009-02-24 液晶表示装置及びその製造方法、電子機器 Expired - Fee Related JP5525166B2 (ja)

Priority Applications (1)

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JP2009040576A JP5525166B2 (ja) 2008-02-27 2009-02-24 液晶表示装置及びその製造方法、電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008046601 2008-02-27
JP2008046601 2008-02-27
JP2009040576A JP5525166B2 (ja) 2008-02-27 2009-02-24 液晶表示装置及びその製造方法、電子機器

Related Child Applications (1)

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JP2014081525A Division JP5788052B2 (ja) 2008-02-27 2014-04-11 薄膜トランジスタ

Publications (3)

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JP2009230128A JP2009230128A (ja) 2009-10-08
JP2009230128A5 JP2009230128A5 (enExample) 2012-03-29
JP5525166B2 true JP5525166B2 (ja) 2014-06-18

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JP2009040576A Expired - Fee Related JP5525166B2 (ja) 2008-02-27 2009-02-24 液晶表示装置及びその製造方法、電子機器
JP2014081525A Expired - Fee Related JP5788052B2 (ja) 2008-02-27 2014-04-11 薄膜トランジスタ

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JP2014081525A Expired - Fee Related JP5788052B2 (ja) 2008-02-27 2014-04-11 薄膜トランジスタ

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US (2) US8049221B2 (enExample)
JP (2) JP5525166B2 (enExample)
CN (1) CN101939694B (enExample)
TW (1) TWI483049B (enExample)
WO (1) WO2009107686A1 (enExample)

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US7989234B2 (en) * 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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US8456586B2 (en) * 2009-06-11 2013-06-04 Apple Inc. Portable computer display structures
US8408780B2 (en) * 2009-11-03 2013-04-02 Apple Inc. Portable computer housing with integral display
US8743309B2 (en) 2009-11-10 2014-06-03 Apple Inc. Methods for fabricating display structures
US8467177B2 (en) 2010-10-29 2013-06-18 Apple Inc. Displays with polarizer windows and opaque masking layers for electronic devices
US9143668B2 (en) 2010-10-29 2015-09-22 Apple Inc. Camera lens structures and display structures for electronic devices
US9894781B2 (en) 2012-06-06 2018-02-13 Apple Inc. Notched display layers
US11838432B2 (en) 2019-12-03 2023-12-05 Apple Inc. Handheld electronic device
US11637919B2 (en) 2019-12-03 2023-04-25 Apple Inc. Handheld electronic device
US12003657B2 (en) 2021-03-02 2024-06-04 Apple Inc. Handheld electronic device
US12267449B2 (en) 2022-03-03 2025-04-01 Apple Inc. Handheld electronic device

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JP5105811B2 (ja) 2005-10-14 2012-12-26 株式会社半導体エネルギー研究所 表示装置
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WO2008099528A1 (ja) * 2007-02-13 2008-08-21 Sharp Kabushiki Kaisha 表示装置、表示装置の製造方法
KR101296653B1 (ko) * 2007-10-05 2013-08-14 엘지디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
KR101243824B1 (ko) * 2008-09-24 2013-03-18 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법

Also Published As

Publication number Publication date
US8361820B2 (en) 2013-01-29
TWI483049B (zh) 2015-05-01
JP5788052B2 (ja) 2015-09-30
WO2009107686A1 (en) 2009-09-03
CN101939694B (zh) 2014-01-29
US8049221B2 (en) 2011-11-01
JP2014160849A (ja) 2014-09-04
US20090212300A1 (en) 2009-08-27
CN101939694A (zh) 2011-01-05
TW200947087A (en) 2009-11-16
US20120045860A1 (en) 2012-02-23
JP2009230128A (ja) 2009-10-08

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