TWI483049B - 液晶顯示裝置和其製造方法，以及電子裝置 - Google Patents
液晶顯示裝置和其製造方法，以及電子裝置 Download PDFInfo
- Publication number
- TWI483049B TWI483049B TW098106195A TW98106195A TWI483049B TW I483049 B TWI483049 B TW I483049B TW 098106195 A TW098106195 A TW 098106195A TW 98106195 A TW98106195 A TW 98106195A TW I483049 B TWI483049 B TW I483049B
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- Prior art keywords
- film
- etching
- conductive film
- electrode layer
- layer
- Prior art date
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008046601 | 2008-02-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200947087A TW200947087A (en) | 2009-11-16 |
| TWI483049B true TWI483049B (zh) | 2015-05-01 |
Family
ID=40997429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098106195A TWI483049B (zh) | 2008-02-27 | 2009-02-26 | 液晶顯示裝置和其製造方法，以及電子裝置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8049221B2 (enExample) |
| JP (2) | JP5525166B2 (enExample) |
| CN (1) | CN101939694B (enExample) |
| TW (1) | TWI483049B (enExample) |
| WO (1) | WO2009107686A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8101442B2 (en) * | 2008-03-05 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing EL display device |
| US7749820B2 (en) * | 2008-03-07 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof |
| US8207026B2 (en) * | 2009-01-28 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and manufacturing method of display device |
| US7989234B2 (en) * | 2009-02-16 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor and method for manufacturing display device |
| US8202769B2 (en) | 2009-03-11 | 2012-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5539765B2 (ja) * | 2009-03-26 | 2014-07-02 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
| US8456586B2 (en) * | 2009-06-11 | 2013-06-04 | Apple Inc. | Portable computer display structures |
| US8408780B2 (en) * | 2009-11-03 | 2013-04-02 | Apple Inc. | Portable computer housing with integral display |
| US8743309B2 (en) | 2009-11-10 | 2014-06-03 | Apple Inc. | Methods for fabricating display structures |
| US8467177B2 (en) | 2010-10-29 | 2013-06-18 | Apple Inc. | Displays with polarizer windows and opaque masking layers for electronic devices |
| US9143668B2 (en) | 2010-10-29 | 2015-09-22 | Apple Inc. | Camera lens structures and display structures for electronic devices |
| US9894781B2 (en) | 2012-06-06 | 2018-02-13 | Apple Inc. | Notched display layers |
| US11838432B2 (en) | 2019-12-03 | 2023-12-05 | Apple Inc. | Handheld electronic device |
| US11637919B2 (en) | 2019-12-03 | 2023-04-25 | Apple Inc. | Handheld electronic device |
| US12003657B2 (en) | 2021-03-02 | 2024-06-04 | Apple Inc. | Handheld electronic device |
| US12267449B2 (en) | 2022-03-03 | 2025-04-01 | Apple Inc. | Handheld electronic device |
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|---|---|---|---|---|
| JPH1084669A (ja) * | 1996-09-10 | 1998-03-31 | Fuji Electric Co Ltd | 電力変換装置のノイズフィルタ |
| JP3161938B2 (ja) * | 1995-05-11 | 2001-04-25 | キヤノン株式会社 | 超伝導線の製造方法 |
| JP2003179069A (ja) * | 2001-12-12 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、液晶表示装置、有機エレクトロルミネッセンス素子、ならびに表示装置用基板およびその製造方法 |
| TW200703445A (en) * | 2005-05-20 | 2007-01-16 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
| JP2007133371A (ja) * | 2005-10-14 | 2007-05-31 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
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| JPS56122123A (en) * | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
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| JPS61225869A (ja) * | 1985-03-29 | 1986-10-07 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ装置とその製造方法 |
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| JPS6273669A (ja) * | 1985-09-26 | 1987-04-04 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ装置の製造方法 |
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| WO2008099528A1 (ja) * | 2007-02-13 | 2008-08-21 | Sharp Kabushiki Kaisha | 表示装置、表示装置の製造方法 |
| KR101296653B1 (ko) * | 2007-10-05 | 2013-08-14 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 이의 제조 방법 |
| KR101243824B1 (ko) * | 2008-09-24 | 2013-03-18 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
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2009
- 2009-02-19 CN CN200980104073.2A patent/CN101939694B/zh not_active Expired - Fee Related
- 2009-02-19 WO PCT/JP2009/053465 patent/WO2009107686A1/en not_active Ceased
- 2009-02-23 US US12/390,911 patent/US8049221B2/en not_active Expired - Fee Related
- 2009-02-24 JP JP2009040576A patent/JP5525166B2/ja not_active Expired - Fee Related
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3161938B2 (ja) * | 1995-05-11 | 2001-04-25 | キヤノン株式会社 | 超伝導線の製造方法 |
| JPH1084669A (ja) * | 1996-09-10 | 1998-03-31 | Fuji Electric Co Ltd | 電力変換装置のノイズフィルタ |
| JP2003179069A (ja) * | 2001-12-12 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、液晶表示装置、有機エレクトロルミネッセンス素子、ならびに表示装置用基板およびその製造方法 |
| TW200703445A (en) * | 2005-05-20 | 2007-01-16 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
| JP2007133371A (ja) * | 2005-10-14 | 2007-05-31 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8361820B2 (en) | 2013-01-29 |
| JP5788052B2 (ja) | 2015-09-30 |
| WO2009107686A1 (en) | 2009-09-03 |
| JP5525166B2 (ja) | 2014-06-18 |
| CN101939694B (zh) | 2014-01-29 |
| US8049221B2 (en) | 2011-11-01 |
| JP2014160849A (ja) | 2014-09-04 |
| US20090212300A1 (en) | 2009-08-27 |
| CN101939694A (zh) | 2011-01-05 |
| TW200947087A (en) | 2009-11-16 |
| US20120045860A1 (en) | 2012-02-23 |
| JP2009230128A (ja) | 2009-10-08 |
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