JP5523747B2 - Ledチップからの光導出を高める改良ボンドパッドのデザイン - Google Patents
Ledチップからの光導出を高める改良ボンドパッドのデザイン Download PDFInfo
- Publication number
- JP5523747B2 JP5523747B2 JP2009132243A JP2009132243A JP5523747B2 JP 5523747 B2 JP5523747 B2 JP 5523747B2 JP 2009132243 A JP2009132243 A JP 2009132243A JP 2009132243 A JP2009132243 A JP 2009132243A JP 5523747 B2 JP5523747 B2 JP 5523747B2
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- JP
- Japan
- Prior art keywords
- semiconductor structure
- bond pad
- light emitting
- led chip
- type layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/185,031 | 2008-08-01 | ||
| US12/185,031 US8384115B2 (en) | 2008-08-01 | 2008-08-01 | Bond pad design for enhancing light extraction from LED chips |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010041033A JP2010041033A (ja) | 2010-02-18 |
| JP2010041033A5 JP2010041033A5 (https=) | 2012-05-17 |
| JP5523747B2 true JP5523747B2 (ja) | 2014-06-18 |
Family
ID=41351599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009132243A Active JP5523747B2 (ja) | 2008-08-01 | 2009-06-01 | Ledチップからの光導出を高める改良ボンドパッドのデザイン |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8384115B2 (https=) |
| EP (1) | EP2149918A1 (https=) |
| JP (1) | JP5523747B2 (https=) |
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| JP5281408B2 (ja) * | 2005-12-02 | 2013-09-04 | クリスタル・イズ,インコーポレイテッド | ドープされた窒化アルミニウム結晶及びそれを製造する方法 |
| US9034103B2 (en) * | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| EP2007933B1 (en) * | 2006-03-30 | 2017-05-10 | Crystal Is, Inc. | Methods for controllable doping of aluminum nitride bulk crystals |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US8323406B2 (en) | 2007-01-17 | 2012-12-04 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US8080833B2 (en) * | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| CN101652832B (zh) * | 2007-01-26 | 2011-06-22 | 晶体公司 | 厚的赝晶氮化物外延层 |
| US8088220B2 (en) | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
| TWI376817B (en) * | 2007-11-23 | 2012-11-11 | Epistar Corp | Light emitting device, light source apparatus and backlight module |
| US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
| WO2012003304A1 (en) | 2010-06-30 | 2012-01-05 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
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| TWD146469S (zh) * | 2011-05-24 | 2012-04-11 | 隆達電子股份有限公司 | 晶片 |
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| TWD146470S (zh) * | 2011-05-24 | 2012-04-11 | 隆達電子股份有限公司 | 晶片 |
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| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
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| DE102012007727A1 (de) | 2012-04-18 | 2013-10-24 | Mühlbauer Ag | Festkörper-Leuchtmittelanordnung sowie Vorrichtung und Verfahren zu deren Herstellung |
| JP6275817B2 (ja) | 2013-03-15 | 2018-02-07 | クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. | 仮像電子及び光学電子装置に対する平面コンタクト |
| CN105814408B (zh) | 2013-10-01 | 2018-06-12 | 瑞尼斯豪公司 | 编码器设备和编码器读头 |
| US11164997B2 (en) | 2016-08-17 | 2021-11-02 | The Regents Of The Univeristy Of California | III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent |
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-
2008
- 2008-08-01 US US12/185,031 patent/US8384115B2/en active Active
-
2009
- 2009-05-05 EP EP09159460A patent/EP2149918A1/en not_active Withdrawn
- 2009-06-01 JP JP2009132243A patent/JP5523747B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2149918A1 (en) | 2010-02-03 |
| US20100025719A1 (en) | 2010-02-04 |
| US8384115B2 (en) | 2013-02-26 |
| JP2010041033A (ja) | 2010-02-18 |
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