JP5523747B2 - Ledチップからの光導出を高める改良ボンドパッドのデザイン - Google Patents
Ledチップからの光導出を高める改良ボンドパッドのデザイン Download PDFInfo
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- JP5523747B2 JP5523747B2 JP2009132243A JP2009132243A JP5523747B2 JP 5523747 B2 JP5523747 B2 JP 5523747B2 JP 2009132243 A JP2009132243 A JP 2009132243A JP 2009132243 A JP2009132243 A JP 2009132243A JP 5523747 B2 JP5523747 B2 JP 5523747B2
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- 238000009795 derivation Methods 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims description 68
- 239000000463 material Substances 0.000 claims description 31
- 239000004020 conductor Substances 0.000 claims description 22
- 238000003892 spreading Methods 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000945 filler Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000001652 electrophoretic deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- -1 region Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000013500 data storage Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
- 238000011410 subtraction method Methods 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
Claims (9)
- 光発光ダイオード(LED)チップデバイスであって、
n型層と、p型層と、前記n型層および前記p型層の間に配置される活性領域とを備え、光を発光する半導体構造と、
前記LEDチップデバイスの互いに反対側の面上に配置された第1及び第2の接触部と、
前記半導体構造上に配置される少なくとも1つのボンドパッドと、
を備え、
前記ボンドパッドの真下の前記半導体構造の各層は、前記半導体構造の前記残りの領域の対応する層と連続し、前記ボンドパッドの真下の前記半導体構造と、前記半導体構造の前記残りの領域との間の接続部分は、少なくとも1つの溝により前記ボンドパッドよりも狭く形成され、
前記LEDチップデバイスは、さらに、
前記p型層と電気的に接触し、前記半導体構造の主発光面とは反対側にあるp接触部と、
前記p接触部と、少なくとも1つの前記ボンドパッドの真下の前記p型層との間に配置される電流遮断層と
を備えることを特徴とするLEDチップデバイス。 - 少なくとも1つの前記ボンドパッドおよび前記半導体構造と電気的に接触する少なくとも1つの電流拡散導体をさらに備えることを特徴とする請求項1に記載のLEDチップデバイス。
- 前記半導体構造の側壁を覆う不活性化層をさらに備えることを特徴とする請求項1に記載のLEDチップデバイス。
- 少なくとも1つの前記ボンドパッドは、丸いことを特徴とする請求項1に記載のLEDチップデバイス。
- 少なくとも1つの前記ボンドパッドは、長方形であることを特徴とする請求項1に記載のLEDチップデバイス。
- 少なくとも1つの前記溝は、充填材料で埋められることを特徴とする請求項1に記載のLEDチップデバイス。
- 前記半導体構造の前記主発光面は、長方形であることを特徴とする請求項1に記載のLEDチップデバイス。
- 前記ボンドパッドは、近くの前記主発光面の角にそれぞれ隣り合うように配置される2つの領域に形成され、
前記溝は、前記2つのボンドパッドのそれぞれの端に隣接する2つの領域に形成されている
ことを特徴とする請求項7に記載のLEDチップデバイス。 - 光発光ダイオード(LED)デバイスであって、
マウント表面上に配置される光発光半導体構造であって、該光発光半導体構造は、n型層と、p型層と、前記n型層および前記p型層の間に配置される活性領域と、長方形の主発光面とを含み、前記主発光面の角に隣り合って2つの半島状のボンドパッドマウント領域を画定するように形成され、前記ボンドパッドマウント領域は前記半導体構造の残りの領域から溝により分離され、前記溝は、前記ボンドパッドマウント領域の真下の前記半導体構造の領域を前記半導体構造の前記残りの領域から画定する光発光半導体構造と、
前記ボンドパッドマウント領域上にそれぞれ配置される2つのボンドパッドであって、前記ボンドパッドの真下の前記半導体構造の各層が前記半導体構造の前記残りの領域の対応する層と連続し、前記ボンドパッドの真下の前記半導体構造と、前記半導体構造の前記残りの領域との間の接続部分が前記ボンドパッドよりも狭い、2つのボンドパッドと、
前記主発光面上に配置されて、前記ボンドパッドと電気的に接触する電流拡散導体であって、前記主発光面上でパターンを形成する電流拡散導体と、
前記主発光面の反対側における、前記LEDデバイスの面上にあり、前記p型層と電気的に接触する電気的接触部と、
前記電気的接触部と、前記ボンドパッドの真下の前記p型層との間に配置される電流遮断層と
を備えることを特徴とするLEDデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/185,031 US8384115B2 (en) | 2008-08-01 | 2008-08-01 | Bond pad design for enhancing light extraction from LED chips |
US12/185,031 | 2008-08-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010041033A JP2010041033A (ja) | 2010-02-18 |
JP2010041033A5 JP2010041033A5 (ja) | 2012-05-17 |
JP5523747B2 true JP5523747B2 (ja) | 2014-06-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009132243A Active JP5523747B2 (ja) | 2008-08-01 | 2009-06-01 | Ledチップからの光導出を高める改良ボンドパッドのデザイン |
Country Status (3)
Country | Link |
---|---|
US (1) | US8384115B2 (ja) |
EP (1) | EP2149918A1 (ja) |
JP (1) | JP5523747B2 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWD146468S1 (zh) * | 2011-05-24 | 2012-04-11 | 隆達電子股份有限公司 | 晶片 |
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
EP1954857B1 (en) | 2005-12-02 | 2018-09-26 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
US9034103B2 (en) * | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
JP5479888B2 (ja) * | 2006-03-30 | 2014-04-23 | クリスタル アイエス インコーポレイテッド | 窒化アルミニウムバルク結晶を制御可能にドーピングする方法 |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US8323406B2 (en) * | 2007-01-17 | 2012-12-04 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
JP5730484B2 (ja) * | 2007-01-26 | 2015-06-10 | クリスタル アイエス インコーポレイテッド | 厚みのある擬似格子整合型の窒化物エピタキシャル層 |
US8088220B2 (en) | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
TWI376817B (en) | 2007-11-23 | 2012-11-11 | Epistar Corp | Light emitting device, light source apparatus and backlight module |
US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
WO2012003304A1 (en) | 2010-06-30 | 2012-01-05 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
US20120032212A1 (en) * | 2010-08-06 | 2012-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of light emitting diode sidewall passivation |
US10170668B2 (en) | 2011-06-21 | 2019-01-01 | Micron Technology, Inc. | Solid state lighting devices with improved current spreading and light extraction and associated methods |
JP2013008818A (ja) * | 2011-06-24 | 2013-01-10 | Toshiba Corp | 半導体発光素子 |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
US9558274B2 (en) * | 2011-11-02 | 2017-01-31 | Microsoft Technology Licensing, Llc | Routing query results |
DE102012007727A1 (de) | 2012-04-18 | 2013-10-24 | Mühlbauer Ag | Festkörper-Leuchtmittelanordnung sowie Vorrichtung und Verfahren zu deren Herstellung |
CN105144345B (zh) | 2013-03-15 | 2018-05-08 | 晶体公司 | 与赝配电子和光电器件的平面接触 |
JP7032045B2 (ja) | 2013-10-01 | 2022-03-08 | レニショウ パブリック リミテッド カンパニー | 測定エンコーダ |
US11164997B2 (en) | 2016-08-17 | 2021-11-02 | The Regents Of The Univeristy Of California | III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2755433C2 (de) | 1977-12-13 | 1986-09-25 | Telefunken electronic GmbH, 7100 Heilbronn | Strahlungsemittierende Halbleiterdiode |
DE3684298D1 (de) | 1986-01-09 | 1992-04-16 | Ibm | Verfahren zur herstellung eines kontakts unter verwendung der erweichung zweier glasschichten. |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US4946547A (en) | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
US5200022A (en) | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
JPH04284620A (ja) | 1991-03-13 | 1992-10-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5192987A (en) | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
KR0130963B1 (ko) | 1992-06-09 | 1998-04-14 | 구자홍 | T형 단면구조의 게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법 |
JP2885015B2 (ja) | 1993-08-31 | 1999-04-19 | 日本ビクター株式会社 | ディスク装置 |
JP3077524B2 (ja) | 1994-09-12 | 2000-08-14 | 株式会社村田製作所 | 半導体装置の製造方法 |
JP3027095B2 (ja) * | 1994-10-07 | 2000-03-27 | シャープ株式会社 | 半導体発光素子 |
JP2827992B2 (ja) | 1995-11-02 | 1998-11-25 | 日本電気株式会社 | 微細パターンの形成方法 |
US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
US6316793B1 (en) | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
US5959316A (en) | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
US6465809B1 (en) | 1999-06-09 | 2002-10-15 | Kabushiki Kaisha Toshiba | Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof |
US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
US6657236B1 (en) | 1999-12-03 | 2003-12-02 | Cree Lighting Company | Enhanced light extraction in LEDs through the use of internal and external optical elements |
US6486499B1 (en) | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
JP3505643B2 (ja) | 2000-04-19 | 2004-03-08 | 星和電機株式会社 | 窒化ガリウム系半導体発光素子 |
US6888171B2 (en) * | 2000-12-22 | 2005-05-03 | Dallan Luming Science & Technology Group Co., Ltd. | Light emitting diode |
US6642652B2 (en) | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
JP3633595B2 (ja) | 2001-08-10 | 2005-03-30 | 富士通株式会社 | レジストパターン膨潤化材料およびそれを用いた微小パターンの形成方法および半導体装置の製造方法 |
JP4148494B2 (ja) | 2001-12-04 | 2008-09-10 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
TW200305283A (en) | 2001-12-06 | 2003-10-16 | Hrl Lab Llc | High power-low noise microwave GaN heterojunction field effet transistor |
TW516248B (en) | 2001-12-21 | 2003-01-01 | Epitech Technology Corp | Nitride light emitting diode with spiral-shaped metal electrode |
JP4233268B2 (ja) | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
US6828596B2 (en) | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
US7923198B2 (en) | 2002-08-14 | 2011-04-12 | Fujitsu Limited | Method of manufacturing fine T-shaped electrode |
US7419894B2 (en) | 2002-08-28 | 2008-09-02 | Fujitsu Limited | Gate electrode and manufacturing method thereof, and semiconductor device and manufacturing method thereof |
US6869812B1 (en) | 2003-05-13 | 2005-03-22 | Heng Liu | High power AllnGaN based multi-chip light emitting diode |
EP1690300B1 (en) | 2003-11-04 | 2012-06-13 | Panasonic Corporation | Manufacturing method of semiconductor light emitting device |
JP4124102B2 (ja) | 2003-11-12 | 2008-07-23 | 松下電工株式会社 | 多重反射防止構造を備えた発光素子とその製造方法 |
US7045404B2 (en) | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
JP4330476B2 (ja) * | 2004-03-29 | 2009-09-16 | スタンレー電気株式会社 | 半導体発光素子 |
US7432142B2 (en) | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
US7795623B2 (en) | 2004-06-30 | 2010-09-14 | Cree, Inc. | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
US20060002442A1 (en) | 2004-06-30 | 2006-01-05 | Kevin Haberern | Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures |
CN1820378A (zh) | 2004-07-12 | 2006-08-16 | 罗姆股份有限公司 | 半导体发光元件 |
CN100487931C (zh) | 2004-09-27 | 2009-05-13 | 松下电器产业株式会社 | 半导体发光元件及其制造方法和安装方法、发光器件 |
TWI257714B (en) | 2004-10-20 | 2006-07-01 | Arima Optoelectronics Corp | Light-emitting device using multilayer composite metal plated layer as flip-chip electrode |
JP4284620B2 (ja) | 2004-12-27 | 2009-06-24 | ソニー株式会社 | 情報処理装置および方法、並びにプログラム |
TWI244228B (en) | 2005-02-03 | 2005-11-21 | United Epitaxy Co Ltd | Light emitting device and manufacture method thereof |
US11791385B2 (en) | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
TWI246210B (en) * | 2005-04-28 | 2005-12-21 | Epitech Corp Ltd | Lateral current blocking light emitting diode and method for manufacturing the same |
US7365374B2 (en) | 2005-05-03 | 2008-04-29 | Nitronex Corporation | Gallium nitride material structures including substrates and methods associated with the same |
DE102005025416A1 (de) | 2005-06-02 | 2006-12-14 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip mit einer Kontaktstruktur |
US7348212B2 (en) | 2005-09-13 | 2008-03-25 | Philips Lumileds Lighting Company Llc | Interconnects for semiconductor light emitting devices |
US7439166B1 (en) | 2005-06-11 | 2008-10-21 | Hrl Laboratories, Llc | Method for producing tiered gate structure devices |
JP2007073590A (ja) * | 2005-09-05 | 2007-03-22 | Kyocera Corp | 発光素子 |
JP2007087973A (ja) | 2005-09-16 | 2007-04-05 | Rohm Co Ltd | 窒化物半導体素子の製法およびその方法により得られる窒化物半導体発光素子 |
KR100620393B1 (ko) | 2005-11-03 | 2006-09-06 | 한국전자통신연구원 | 전계효과 트랜지스터 및 그의 제조 방법 |
KR100665284B1 (ko) * | 2005-11-07 | 2007-01-09 | 삼성전기주식회사 | 반도체 발광 소자 |
US7592211B2 (en) | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
US7626210B2 (en) | 2006-06-09 | 2009-12-01 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED |
US8076688B2 (en) * | 2006-09-25 | 2011-12-13 | Seoul Opto Device Co., Ltd. | Light emitting diode having extensions of electrodes for current spreading |
KR100853166B1 (ko) | 2007-01-30 | 2008-08-20 | 포항공과대학교 산학협력단 | 전계효과형 화합물 반도체 소자의 제조 방법 |
US7943286B2 (en) | 2007-03-27 | 2011-05-17 | Bae Systems Information And Electronic Systems Integration Inc. | Reproducible, high yield method for fabricating ultra-short T-gates on HFETs |
DE102007046743A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement sowie Verfahren zu dessen Herstellung |
US8575633B2 (en) | 2008-12-08 | 2013-11-05 | Cree, Inc. | Light emitting diode with improved light extraction |
US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US9634191B2 (en) | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
US20090140279A1 (en) * | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
-
2008
- 2008-08-01 US US12/185,031 patent/US8384115B2/en active Active
-
2009
- 2009-05-05 EP EP09159460A patent/EP2149918A1/en not_active Withdrawn
- 2009-06-01 JP JP2009132243A patent/JP5523747B2/ja active Active
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Publication number | Publication date |
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US8384115B2 (en) | 2013-02-26 |
EP2149918A1 (en) | 2010-02-03 |
US20100025719A1 (en) | 2010-02-04 |
JP2010041033A (ja) | 2010-02-18 |
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