JP5521827B2 - 焦電型検出器、焦電型検出装置及び電子機器 - Google Patents

焦電型検出器、焦電型検出装置及び電子機器 Download PDF

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Publication number
JP5521827B2
JP5521827B2 JP2010145919A JP2010145919A JP5521827B2 JP 5521827 B2 JP5521827 B2 JP 5521827B2 JP 2010145919 A JP2010145919 A JP 2010145919A JP 2010145919 A JP2010145919 A JP 2010145919A JP 5521827 B2 JP5521827 B2 JP 5521827B2
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layer
electrode
reducing gas
gas barrier
film
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JP2010145919A
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Japanese (ja)
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JP2012008068A (ja
JP2012008068A5 (OSRAM
Inventor
貴史 野田
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2010145919A priority Critical patent/JP5521827B2/ja
Priority to US13/166,937 priority patent/US8736010B2/en
Priority to CN201110177237.3A priority patent/CN102368046B/zh
Publication of JP2012008068A publication Critical patent/JP2012008068A/ja
Publication of JP2012008068A5 publication Critical patent/JP2012008068A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2010145919A 2010-06-28 2010-06-28 焦電型検出器、焦電型検出装置及び電子機器 Expired - Fee Related JP5521827B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010145919A JP5521827B2 (ja) 2010-06-28 2010-06-28 焦電型検出器、焦電型検出装置及び電子機器
US13/166,937 US8736010B2 (en) 2010-06-28 2011-06-23 Pyroelectric detector, pyroelectric detection device, and electronic instrument
CN201110177237.3A CN102368046B (zh) 2010-06-28 2011-06-28 热电型检测器、热电型检测装置以及电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010145919A JP5521827B2 (ja) 2010-06-28 2010-06-28 焦電型検出器、焦電型検出装置及び電子機器

Publications (3)

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JP2012008068A JP2012008068A (ja) 2012-01-12
JP2012008068A5 JP2012008068A5 (OSRAM) 2013-08-15
JP5521827B2 true JP5521827B2 (ja) 2014-06-18

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JP2010145919A Expired - Fee Related JP5521827B2 (ja) 2010-06-28 2010-06-28 焦電型検出器、焦電型検出装置及び電子機器

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US (1) US8736010B2 (OSRAM)
JP (1) JP5521827B2 (OSRAM)
CN (1) CN102368046B (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5771900B2 (ja) * 2010-03-26 2015-09-02 セイコーエプソン株式会社 熱型光検出器、熱型光検出装置及び電子機器
JP5772052B2 (ja) * 2011-02-23 2015-09-02 セイコーエプソン株式会社 焦電型検出器、焦電型検出装置及び電子機器
FR2999805B1 (fr) * 2012-12-17 2017-12-22 Commissariat Energie Atomique Procede de realisation d'un dispositif de detection infrarouge
JP6142618B2 (ja) * 2013-03-28 2017-06-07 Tdk株式会社 赤外線センサ
US11211305B2 (en) * 2016-04-01 2021-12-28 Texas Instruments Incorporated Apparatus and method to support thermal management of semiconductor-based components
US10861796B2 (en) 2016-05-10 2020-12-08 Texas Instruments Incorporated Floating die package
US10179730B2 (en) 2016-12-08 2019-01-15 Texas Instruments Incorporated Electronic sensors with sensor die in package structure cavity
US10074639B2 (en) 2016-12-30 2018-09-11 Texas Instruments Incorporated Isolator integrated circuits with package structure cavity and fabrication methods
CN107414094A (zh) * 2017-07-10 2017-12-01 莱芜市泰东粉末科技有限公司 防止炉管内未冷却微纳米铁粉氧化爆炸方法及推舟炉
GB201902452D0 (en) 2019-02-22 2019-04-10 Pyreos Ltd Microsystem and method for making the microsystem

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06281503A (ja) * 1993-02-01 1994-10-07 Nippon Ceramic Co Ltd 焦電型赤外線センサとその製造方法
US5600174A (en) * 1994-10-11 1997-02-04 The Board Of Trustees Of The Leeland Stanford Junior University Suspended single crystal silicon structures and method of making same
EP0827216B1 (en) 1996-08-30 2007-01-24 Texas Instruments Incorporated Improvements in or relating to thermal imaging systems
US5949071A (en) * 1997-08-14 1999-09-07 Sandia Corporation Uncooled thin film pyroelectric IR detector with aerogel thermal isolation
JP2004296929A (ja) * 2003-03-27 2004-10-21 Seiko Epson Corp 強誘電体キャパシタの製造方法、強誘電体キャパシタ、記憶素子、電子素子、メモリ装置及び電子機器
JP2004354172A (ja) * 2003-05-28 2004-12-16 Tdk Corp 赤外線温度センサ
JP2006005234A (ja) 2004-06-18 2006-01-05 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP2007150025A (ja) 2005-11-29 2007-06-14 Seiko Epson Corp 強誘電体メモリの製造方法
JP2008218782A (ja) 2007-03-06 2008-09-18 Seiko Epson Corp 半導体装置及びその製造方法
US8110883B2 (en) * 2007-03-12 2012-02-07 Nantero Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
JP2008232896A (ja) * 2007-03-22 2008-10-02 Toyohashi Univ Of Technology 薄膜赤外線検出素子およびその製造方法
JP2008305960A (ja) * 2007-06-07 2008-12-18 Seiko Epson Corp 強誘電体キャパシタの製造方法及び強誘電体キャパシタ
JP2009065089A (ja) 2007-09-10 2009-03-26 Seiko Epson Corp 半導体装置及びその製造方法
JP2009071022A (ja) 2007-09-13 2009-04-02 Seiko Epson Corp 半導体装置の製造方法、及び半導体装置
JP2009071141A (ja) * 2007-09-14 2009-04-02 Seiko Epson Corp 強誘電体メモリ装置の製造方法及び強誘電体メモリ装置
JP2009071242A (ja) 2007-09-18 2009-04-02 Seiko Epson Corp 半導体装置及びその製造方法
JP2009071241A (ja) 2007-09-18 2009-04-02 Seiko Epson Corp 半導体装置及びその製造方法
JP2009124017A (ja) 2007-11-16 2009-06-04 Seiko Epson Corp 強誘電体メモリ装置およびその製造方法
JP4453846B2 (ja) 2007-11-20 2010-04-21 セイコーエプソン株式会社 強誘電体メモリ装置およびその製造方法
JP2009130188A (ja) 2007-11-26 2009-06-11 Seiko Epson Corp メモリ装置の製造方法
JP2009141179A (ja) 2007-12-07 2009-06-25 Seiko Epson Corp 強誘電体メモリ装置およびその製造方法
JP5214690B2 (ja) * 2010-09-13 2013-06-19 株式会社東芝 赤外線検出素子

Also Published As

Publication number Publication date
CN102368046A (zh) 2012-03-07
US8736010B2 (en) 2014-05-27
CN102368046B (zh) 2016-07-20
US20110316113A1 (en) 2011-12-29
JP2012008068A (ja) 2012-01-12

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