JP2012008068A5 - - Google Patents
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- Publication number
- JP2012008068A5 JP2012008068A5 JP2010145919A JP2010145919A JP2012008068A5 JP 2012008068 A5 JP2012008068 A5 JP 2012008068A5 JP 2010145919 A JP2010145919 A JP 2010145919A JP 2010145919 A JP2010145919 A JP 2010145919A JP 2012008068 A5 JP2012008068 A5 JP 2012008068A5
- Authority
- JP
- Japan
- Prior art keywords
- gas barrier
- reducing gas
- film
- pyroelectric
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims 16
- 239000007789 gas Substances 0.000 claims 16
- 239000010410 layer Substances 0.000 claims 15
- 239000003990 capacitor Substances 0.000 claims 14
- 238000001514 detection method Methods 0.000 claims 8
- 230000031700 light absorption Effects 0.000 claims 7
- 239000011229 interlayer Substances 0.000 claims 6
- 230000002093 peripheral effect Effects 0.000 claims 5
- 239000000463 material Substances 0.000 claims 3
- 238000011144 upstream manufacturing Methods 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010145919A JP5521827B2 (ja) | 2010-06-28 | 2010-06-28 | 焦電型検出器、焦電型検出装置及び電子機器 |
| US13/166,937 US8736010B2 (en) | 2010-06-28 | 2011-06-23 | Pyroelectric detector, pyroelectric detection device, and electronic instrument |
| CN201110177237.3A CN102368046B (zh) | 2010-06-28 | 2011-06-28 | 热电型检测器、热电型检测装置以及电子设备 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010145919A JP5521827B2 (ja) | 2010-06-28 | 2010-06-28 | 焦電型検出器、焦電型検出装置及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012008068A JP2012008068A (ja) | 2012-01-12 |
| JP2012008068A5 true JP2012008068A5 (OSRAM) | 2013-08-15 |
| JP5521827B2 JP5521827B2 (ja) | 2014-06-18 |
Family
ID=45351734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010145919A Expired - Fee Related JP5521827B2 (ja) | 2010-06-28 | 2010-06-28 | 焦電型検出器、焦電型検出装置及び電子機器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8736010B2 (OSRAM) |
| JP (1) | JP5521827B2 (OSRAM) |
| CN (1) | CN102368046B (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5771900B2 (ja) * | 2010-03-26 | 2015-09-02 | セイコーエプソン株式会社 | 熱型光検出器、熱型光検出装置及び電子機器 |
| JP5772052B2 (ja) * | 2011-02-23 | 2015-09-02 | セイコーエプソン株式会社 | 焦電型検出器、焦電型検出装置及び電子機器 |
| FR2999805B1 (fr) * | 2012-12-17 | 2017-12-22 | Commissariat Energie Atomique | Procede de realisation d'un dispositif de detection infrarouge |
| JP6142618B2 (ja) * | 2013-03-28 | 2017-06-07 | Tdk株式会社 | 赤外線センサ |
| US11211305B2 (en) * | 2016-04-01 | 2021-12-28 | Texas Instruments Incorporated | Apparatus and method to support thermal management of semiconductor-based components |
| US10861796B2 (en) | 2016-05-10 | 2020-12-08 | Texas Instruments Incorporated | Floating die package |
| US10179730B2 (en) | 2016-12-08 | 2019-01-15 | Texas Instruments Incorporated | Electronic sensors with sensor die in package structure cavity |
| US10074639B2 (en) | 2016-12-30 | 2018-09-11 | Texas Instruments Incorporated | Isolator integrated circuits with package structure cavity and fabrication methods |
| CN107414094A (zh) * | 2017-07-10 | 2017-12-01 | 莱芜市泰东粉末科技有限公司 | 防止炉管内未冷却微纳米铁粉氧化爆炸方法及推舟炉 |
| GB201902452D0 (en) | 2019-02-22 | 2019-04-10 | Pyreos Ltd | Microsystem and method for making the microsystem |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06281503A (ja) * | 1993-02-01 | 1994-10-07 | Nippon Ceramic Co Ltd | 焦電型赤外線センサとその製造方法 |
| US5600174A (en) * | 1994-10-11 | 1997-02-04 | The Board Of Trustees Of The Leeland Stanford Junior University | Suspended single crystal silicon structures and method of making same |
| EP0827216B1 (en) | 1996-08-30 | 2007-01-24 | Texas Instruments Incorporated | Improvements in or relating to thermal imaging systems |
| US5949071A (en) * | 1997-08-14 | 1999-09-07 | Sandia Corporation | Uncooled thin film pyroelectric IR detector with aerogel thermal isolation |
| JP2004296929A (ja) * | 2003-03-27 | 2004-10-21 | Seiko Epson Corp | 強誘電体キャパシタの製造方法、強誘電体キャパシタ、記憶素子、電子素子、メモリ装置及び電子機器 |
| JP2004354172A (ja) * | 2003-05-28 | 2004-12-16 | Tdk Corp | 赤外線温度センサ |
| JP2006005234A (ja) | 2004-06-18 | 2006-01-05 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
| JP2007150025A (ja) | 2005-11-29 | 2007-06-14 | Seiko Epson Corp | 強誘電体メモリの製造方法 |
| JP2008218782A (ja) | 2007-03-06 | 2008-09-18 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| US8110883B2 (en) * | 2007-03-12 | 2012-02-07 | Nantero Inc. | Electromagnetic and thermal sensors using carbon nanotubes and methods of making same |
| JP2008232896A (ja) * | 2007-03-22 | 2008-10-02 | Toyohashi Univ Of Technology | 薄膜赤外線検出素子およびその製造方法 |
| JP2008305960A (ja) * | 2007-06-07 | 2008-12-18 | Seiko Epson Corp | 強誘電体キャパシタの製造方法及び強誘電体キャパシタ |
| JP2009065089A (ja) | 2007-09-10 | 2009-03-26 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP2009071022A (ja) | 2007-09-13 | 2009-04-02 | Seiko Epson Corp | 半導体装置の製造方法、及び半導体装置 |
| JP2009071141A (ja) * | 2007-09-14 | 2009-04-02 | Seiko Epson Corp | 強誘電体メモリ装置の製造方法及び強誘電体メモリ装置 |
| JP2009071242A (ja) | 2007-09-18 | 2009-04-02 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP2009071241A (ja) | 2007-09-18 | 2009-04-02 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP2009124017A (ja) | 2007-11-16 | 2009-06-04 | Seiko Epson Corp | 強誘電体メモリ装置およびその製造方法 |
| JP4453846B2 (ja) | 2007-11-20 | 2010-04-21 | セイコーエプソン株式会社 | 強誘電体メモリ装置およびその製造方法 |
| JP2009130188A (ja) | 2007-11-26 | 2009-06-11 | Seiko Epson Corp | メモリ装置の製造方法 |
| JP2009141179A (ja) | 2007-12-07 | 2009-06-25 | Seiko Epson Corp | 強誘電体メモリ装置およびその製造方法 |
| JP5214690B2 (ja) * | 2010-09-13 | 2013-06-19 | 株式会社東芝 | 赤外線検出素子 |
-
2010
- 2010-06-28 JP JP2010145919A patent/JP5521827B2/ja not_active Expired - Fee Related
-
2011
- 2011-06-23 US US13/166,937 patent/US8736010B2/en active Active
- 2011-06-28 CN CN201110177237.3A patent/CN102368046B/zh not_active Expired - Fee Related
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