JP5505407B2 - 高電圧fet用ゲートエッチング方法 - Google Patents
高電圧fet用ゲートエッチング方法 Download PDFInfo
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- JP5505407B2 JP5505407B2 JP2011283023A JP2011283023A JP5505407B2 JP 5505407 B2 JP5505407 B2 JP 5505407B2 JP 2011283023 A JP2011283023 A JP 2011283023A JP 2011283023 A JP2011283023 A JP 2011283023A JP 5505407 B2 JP5505407 B2 JP 5505407B2
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000005530 etching Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 210000000746 body region Anatomy 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
Description
12 エピタキシャル層
15 酸化物領域
31 ゲート酸化物層
33 ゲート部材
35 フィールドプレート
38 N+ソース領域
Claims (8)
- 第1及び第2の側壁を有するメサを定める第1及び第2のトレンチを形成するために、第1の導電型の半導体材料をエッチングする段階と、
前記第1及び第2の側壁をそれぞれ覆う第1及び第2の誘電領域を、前記第1及び第2のトレンチに形成する段階と、
前記第1及び第2の誘電領域上にそれぞれ配置された第1及び第2の開口部を有するマスク層を形成する段階であって、前記マスク層が前記第1及び第2の開口部間で前記メサを覆い、前記メサの上面と一致する前記第1及び第2の側壁の各縁部を越えた距離だけ、前記第1及び第2の誘電領域と重なる、段階と、
前記それぞれの第1及び第2の開口部を貫通して前記第1及び第2の誘電領域を異方的にエッチングし、第3及び第4のトレンチを生成する段階であって、前記第1及び第2の誘電領域の一部は、異方的にエッチングした後も、前記メサの前記第1及び第2の側壁を覆ったままである、段階と、
前記第1及び第2のトレンチにおいて前記第1及び第2の誘電領域を等方的にエッチングして前記第1及び第2の側壁を覆う前記第1及び第2の誘電領域の前記一部を除去する段階と、
を含む方法。 - 第1及び第2のトレンチにおいて、それぞれ第1及び第2のフィールドプレート部材を形成する段階を更に含み、前記第1及び第2のフィールドプレート部材は、それぞれ前記第1及び第2の誘電領域により前記メサから絶縁される、
ことを特徴とする請求項1に記載の方法。 - 前記距離は、0.2μmから0.5μm幅の範囲にある、
ことを特徴とする請求項1に記載の方法。 - 前記第1及び第2の誘電領域を等方的にエッチングした後に、前記メサの第1及び第2の側壁の各々上にゲート酸化物を熱によって形成する段階を更に含む、
ことを特徴とする請求項1に記載の方法。 - 前記第3及び第4のトレンチにおいて、それぞれ第1及び第2のゲート部材を形成する段階を更に含み、前記第1及び第2のゲート部材は、ゲート酸化物により前記第1及び第2の側壁からそれぞれ絶縁される、
ことを特徴とする請求項1に記載の方法。 - 前記第1及び第2のゲート部材に隣接する前記メサの上面近傍に本体領域を形成する段階を更に含み、前記本体領域が第2の導電型である、
ことを特徴とする請求項5に記載の方法。 - 前記メサの上面に第1の導電型のソース領域を形成する段階を更に含み、前記ソース領域が前記本体領域の上に配置される、
ことを特徴とする請求項6に記載の方法。 - 前記第1及び第2のゲート部材はポリシリコンを含む、
ことを特徴とする請求項5に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/542,083 US7381618B2 (en) | 2006-10-03 | 2006-10-03 | Gate etch process for a high-voltage FET |
US11/542,083 | 2006-10-03 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007258532A Division JP4898619B2 (ja) | 2006-10-03 | 2007-10-02 | 高電圧fet用ゲートエッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012060189A JP2012060189A (ja) | 2012-03-22 |
JP5505407B2 true JP5505407B2 (ja) | 2014-05-28 |
Family
ID=38814315
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2007258532A Expired - Fee Related JP4898619B2 (ja) | 2006-10-03 | 2007-10-02 | 高電圧fet用ゲートエッチング方法 |
JP2011283023A Expired - Fee Related JP5505407B2 (ja) | 2006-10-03 | 2011-12-26 | 高電圧fet用ゲートエッチング方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007258532A Expired - Fee Related JP4898619B2 (ja) | 2006-10-03 | 2007-10-02 | 高電圧fet用ゲートエッチング方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7381618B2 (ja) |
EP (2) | EP2346081B1 (ja) |
JP (2) | JP4898619B2 (ja) |
CN (2) | CN102130015B (ja) |
AT (1) | ATE509374T1 (ja) |
HK (1) | HK1116921A1 (ja) |
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-
2006
- 2006-10-03 US US11/542,083 patent/US7381618B2/en active Active
-
2007
- 2007-08-15 EP EP11165247.5A patent/EP2346081B1/en not_active Not-in-force
- 2007-08-15 AT AT07253213T patent/ATE509374T1/de not_active IP Right Cessation
- 2007-08-15 EP EP07253213A patent/EP1909331B1/en not_active Not-in-force
- 2007-10-02 JP JP2007258532A patent/JP4898619B2/ja not_active Expired - Fee Related
- 2007-10-08 CN CN2011100308659A patent/CN102130015B/zh not_active Expired - Fee Related
- 2007-10-08 CN CN2007101622308A patent/CN101159233B/zh not_active Expired - Fee Related
-
2008
- 2008-03-15 US US12/075,897 patent/US7494875B2/en not_active Expired - Fee Related
- 2008-06-30 HK HK08107253.9A patent/HK1116921A1/xx not_active IP Right Cessation
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2011
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Also Published As
Publication number | Publication date |
---|---|
CN102130015A (zh) | 2011-07-20 |
JP2012060189A (ja) | 2012-03-22 |
EP1909331A3 (en) | 2009-04-15 |
US20080160705A1 (en) | 2008-07-03 |
CN102130015B (zh) | 2013-03-20 |
EP2346081A1 (en) | 2011-07-20 |
CN101159233A (zh) | 2008-04-09 |
US20080085603A1 (en) | 2008-04-10 |
CN101159233B (zh) | 2011-03-23 |
HK1116921A1 (en) | 2009-01-02 |
JP2008091924A (ja) | 2008-04-17 |
ATE509374T1 (de) | 2011-05-15 |
EP1909331A2 (en) | 2008-04-09 |
EP2346081B1 (en) | 2015-10-07 |
EP1909331B1 (en) | 2011-05-11 |
US7494875B2 (en) | 2009-02-24 |
US7381618B2 (en) | 2008-06-03 |
JP4898619B2 (ja) | 2012-03-21 |
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