JP5498376B2 - スケーラブル不揮発性記憶装置 - Google Patents

スケーラブル不揮発性記憶装置 Download PDF

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Publication number
JP5498376B2
JP5498376B2 JP2010508587A JP2010508587A JP5498376B2 JP 5498376 B2 JP5498376 B2 JP 5498376B2 JP 2010508587 A JP2010508587 A JP 2010508587A JP 2010508587 A JP2010508587 A JP 2010508587A JP 5498376 B2 JP5498376 B2 JP 5498376B2
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Japan
Prior art keywords
memory
thin film
layer
storage
signal line
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JP2010508587A
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Japanese (ja)
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JP2010527516A (ja
JP2010527516A5 (enExample
Inventor
トロク・イー．・ジェームズ
フレミング・デビッド・レスリー
ワーリ・エドワード
スピッツァー・リチャード
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Integrated Magnetoelectronics Corp
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Integrated Magnetoelectronics Corp
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Publication of JP2010527516A5 publication Critical patent/JP2010527516A5/ja
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2010508587A 2007-05-17 2008-05-15 スケーラブル不揮発性記憶装置 Active JP5498376B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US93867807P 2007-05-17 2007-05-17
US60/938,678 2007-05-17
US94351307P 2007-06-12 2007-06-12
US60/943,513 2007-06-12
US1210607P 2007-12-07 2007-12-07
US61/012,106 2007-12-07
US12/120,549 2008-05-14
US12/120,549 US7911830B2 (en) 2007-05-17 2008-05-14 Scalable nonvolatile memory
PCT/US2008/063781 WO2008144438A1 (en) 2007-05-17 2008-05-15 Scalable nonvolatile memory

Publications (3)

Publication Number Publication Date
JP2010527516A JP2010527516A (ja) 2010-08-12
JP2010527516A5 JP2010527516A5 (enExample) 2011-05-19
JP5498376B2 true JP5498376B2 (ja) 2014-05-21

Family

ID=40027299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010508587A Active JP5498376B2 (ja) 2007-05-17 2008-05-15 スケーラブル不揮発性記憶装置

Country Status (3)

Country Link
US (2) US7911830B2 (enExample)
JP (1) JP5498376B2 (enExample)
WO (1) WO2008144438A1 (enExample)

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Also Published As

Publication number Publication date
US7911830B2 (en) 2011-03-22
US8300455B2 (en) 2012-10-30
US20110211387A1 (en) 2011-09-01
US20080285331A1 (en) 2008-11-20
JP2010527516A (ja) 2010-08-12
WO2008144438A1 (en) 2008-11-27

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