JP2010527516A5 - - Google Patents

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Publication number
JP2010527516A5
JP2010527516A5 JP2010508587A JP2010508587A JP2010527516A5 JP 2010527516 A5 JP2010527516 A5 JP 2010527516A5 JP 2010508587 A JP2010508587 A JP 2010508587A JP 2010508587 A JP2010508587 A JP 2010508587A JP 2010527516 A5 JP2010527516 A5 JP 2010527516A5
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JP
Japan
Prior art keywords
thin film
storage
memory
signal line
storage device
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JP2010508587A
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English (en)
Japanese (ja)
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JP5498376B2 (ja
JP2010527516A (ja
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Priority claimed from US12/120,549 external-priority patent/US7911830B2/en
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Publication of JP2010527516A5 publication Critical patent/JP2010527516A5/ja
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JP2010508587A 2007-05-17 2008-05-15 スケーラブル不揮発性記憶装置 Active JP5498376B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US93867807P 2007-05-17 2007-05-17
US60/938,678 2007-05-17
US94351307P 2007-06-12 2007-06-12
US60/943,513 2007-06-12
US1210607P 2007-12-07 2007-12-07
US61/012,106 2007-12-07
US12/120,549 2008-05-14
US12/120,549 US7911830B2 (en) 2007-05-17 2008-05-14 Scalable nonvolatile memory
PCT/US2008/063781 WO2008144438A1 (en) 2007-05-17 2008-05-15 Scalable nonvolatile memory

Publications (3)

Publication Number Publication Date
JP2010527516A JP2010527516A (ja) 2010-08-12
JP2010527516A5 true JP2010527516A5 (enExample) 2011-05-19
JP5498376B2 JP5498376B2 (ja) 2014-05-21

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Family Applications (1)

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JP2010508587A Active JP5498376B2 (ja) 2007-05-17 2008-05-15 スケーラブル不揮発性記憶装置

Country Status (3)

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US (2) US7911830B2 (enExample)
JP (1) JP5498376B2 (enExample)
WO (1) WO2008144438A1 (enExample)

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