JP5486396B2 - 負荷駆動回路 - Google Patents
負荷駆動回路 Download PDFInfo
- Publication number
- JP5486396B2 JP5486396B2 JP2010109692A JP2010109692A JP5486396B2 JP 5486396 B2 JP5486396 B2 JP 5486396B2 JP 2010109692 A JP2010109692 A JP 2010109692A JP 2010109692 A JP2010109692 A JP 2010109692A JP 5486396 B2 JP5486396 B2 JP 5486396B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- output
- load
- power supply
- load driving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
Description
図8は、本発明による負荷駆動装置10の構成の一例を示す図である。図8を参照して、本発明による負荷駆動装置10の全体構成の一例を説明する。本発明による負荷駆動装置10は、Hブリッジを構成する負荷駆動回路100−1、100−2、300−1、300−2と、CPU105と、第1電源電圧(例えば電源電圧VB)を供給する第1電源1と、第2電源電圧(例えば接地電圧GND)を供給する第2電源2と、第3電源電圧(例えば電源電圧VCC)を供給する第3電源4と、プルアップ抵抗Rdiag1、Rdiag2とを具備する。
以下、図8に示す負荷駆動回路についての詳細な構成及び動作について説明する。
図9から図11を参照して、本発明による負荷駆動回路100の第1の実施の形態における構成及び動作の詳細を説明する。
変化する信号(Vdiag)が出力される。
NトランジスタQp10a、Qp10bがオンとなるため、自己診断出力端子DIAGに
対して図7に示す誤信号が出力された。
図12から図14を参照して、本発明による負荷駆動回路100の第2の実施の形態における構成及び動作の詳細を説明する。
図15から図17を参照して、本発明による負荷駆動回路100の第3の実施の形態における構成及び動作の詳細を説明する。
図18から図20を参照して、本発明による負荷駆動回路300の第4の実施の形態における構成及び動作の詳細を説明する。
2:第2電源
3:誘導性負荷
4:第3電源
10:負荷駆動装置
11:制御回路
12:制御回路
MN2、MN3、MN4a、MN4b、MN4c:Nチャネル型トランジスタ
MP3、MP4:Pチャネル型トランジスタ
QN1、QP1:出力トランジスタ
100、100−1、100−2、300、300−1、300−2:負荷駆動回路
101、301:ロジック回路
102、302:ゲート回路
103、303:過熱検出回路
104、304:過電流検出回路
105:CPU
200、400:ドレイン電極
201、401:シリコン基板
202:N−型エピタキシャル層
211:P型ベース領域
212、222、223、232、233、242、243、252、253、262、263、413、425、435:N+型拡散領域
213、225、235、245、255、265、412、422、423、432、433:P+型拡散領域
214:ゲート電極
221:P型ウェル領域
224、234、244、254、264、414、424、434:ゲート電極
231、241、251、261、:P型ウェル領域
236:N+型反転層
402:P−型エピタキシャル層
411:N型ベース領域
421、431:N型ウェル領域
Claims (10)
- ゲート電圧に応じて、誘導性負荷に対する電流の供給を制御する縦型構造の出力トランジスタと、
前記ゲート電圧の大きさを制御する横型構造の第1トランジスタと、
前記第1トランジスタのバックゲートに対する電圧の供給を制御する横型構造の第2トランジスタと
を具備し、
前記出力トランジスタ、前記第1トランジスタ、及び第2トランジスタは、同一基板上に形成された同一導電型のトランジスタであり、
前記出力トランジスタのドレインは、前記誘導性負荷を介して第1電源に接続され、ソースは、前記第1電源と異なる電源電圧を供給する第2電源に接続され、
前記出力トランジスタにオン電流が流れている場合、前記第2トランジスタは、前記出力トランジスタのソースに供給された電源電圧を前記第1トランジスタのバックゲートに供給し、
前記出力トランジスタにおいて前記オン電流の逆方向の負電流が流れている場合、前記第2トランジスタは、前記ドレインに供給された電源電圧を前記第1トランジスタのバックゲートに供給し、
前記負電流は、前記誘電性負荷の逆起電力に起因して発生する
負荷駆動回路。 - 請求項1に記載の負荷駆動回路において、
前記第2トランジスタは、デプレッション型のトランジスタであり、ドレインは前記第1トランジスタのバックゲートに接続され、ソース及びゲートは前記第2電源に接続される
負荷駆動回路。 - 請求項1に記載の負荷駆動回路において、
前記第2トランジスタは、エンハンスメント型のトランジスタであり、ドレインは前記第1トランジスタのバックゲートに接続され、ソースは前記第2電源に接続され、ゲートはしきい値電圧以上の電圧を供給する第3電源に接続される
負荷駆動回路。 - 請求項1から3のいずれか1項に記載の負荷駆動回路において、
前記出力トランジスタの状態を検出する状態検出回路と、
前記検出結果に応じた制御信号を前記第1トランジスタのゲートに出力するロジック回路と
を更に具備する
負荷駆動回路。 - 請求項4に記載の負荷駆動回路において、
前記第1トランジスタのドレインは、負荷を介して第3電源電圧に接続されるとともに、自己診断出力端子を介してCPUに接続され、ソースは前記第2電源に接続され、前記制御信号に応じた自己診断信号を前記自己診断出力端子に出力し、
前記ロジック回路は、前記自己診断信号に応じて前記CPUから出力される信号に基づいて前記制御信号を出力する
負荷駆動回路。 - 請求項4に記載の負荷駆動回路において、
前記第1トランジスタのドレインは、前記出力トランジスタのゲートに接続され、ソースは前記第2電源に接続され、前記制御信号に応じて前記出力トランジスタのゲート電圧を制御する
負荷駆動回路。 - 請求項4から6のいずれか1項に記載の負荷駆動回路において、
前記状態検出回路は、前記出力トランジスタの周辺温度を監視する過熱検出回路を備える
負荷駆動回路。 - 請求項4から7のいずれか1項に記載の負荷駆動回路において、
前記状態検出回路は、前記出力トランジスタに流れる電流値を監視する過電流検出回路を備える
負荷駆動回路。 - 請求項1から8のいずれか1項に記載の負荷駆動回路において、
前記出力トランジスタ、前記第1トランジスタ、及び第2トランジスタは、N型基板上に形成されたNチャネル型のトランジスタであり、
前記誘導性負荷に接続されたHブリッジにおけるローサイドスイッチを構成する
負荷駆動回路。 - 請求項1から8のいずれか1項に記載の負荷駆動回路において、
前記出力トランジスタ、前記第1トランジスタ、及び第2トランジスタは、P型基板上に形成されたPチャネル型のトランジスタであり、
前記誘導性負荷に接続されたHブリッジにおけるハイサイドスイッチを構成する
負荷駆動回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010109692A JP5486396B2 (ja) | 2010-05-11 | 2010-05-11 | 負荷駆動回路 |
US13/090,488 US8390340B2 (en) | 2010-05-11 | 2011-04-20 | Load driving device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010109692A JP5486396B2 (ja) | 2010-05-11 | 2010-05-11 | 負荷駆動回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011239242A JP2011239242A (ja) | 2011-11-24 |
JP5486396B2 true JP5486396B2 (ja) | 2014-05-07 |
Family
ID=44911227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010109692A Expired - Fee Related JP5486396B2 (ja) | 2010-05-11 | 2010-05-11 | 負荷駆動回路 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8390340B2 (ja) |
JP (1) | JP5486396B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6034150B2 (ja) * | 2012-11-16 | 2016-11-30 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6149532B2 (ja) | 2013-06-19 | 2017-06-21 | 富士電機株式会社 | ステッピングモータ駆動装置 |
JP6300316B2 (ja) * | 2013-07-10 | 2018-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6117640B2 (ja) * | 2013-07-19 | 2017-04-19 | ルネサスエレクトロニクス株式会社 | 半導体装置及び駆動システム |
JP6237011B2 (ja) * | 2013-09-05 | 2017-11-29 | 富士電機株式会社 | 半導体装置 |
JP6340841B2 (ja) * | 2014-03-13 | 2018-06-13 | 富士電機株式会社 | 絶縁ゲート型デバイスの駆動回路 |
JP6413719B2 (ja) * | 2014-12-08 | 2018-10-31 | 富士電機株式会社 | 半導体装置 |
JP6512079B2 (ja) * | 2015-11-26 | 2019-05-15 | 株式会社デンソー | 負荷駆動回路 |
CN108431945B (zh) * | 2015-12-28 | 2022-06-10 | 罗姆股份有限公司 | 半导体设备 |
JP6952641B2 (ja) * | 2018-04-24 | 2021-10-20 | 株式会社東芝 | 制御回路及びパワーモジュール |
US10497780B2 (en) * | 2018-04-27 | 2019-12-03 | Semiconductor Components Industries, Llc | Circuit and an electronic device including a transistor and a component and a process of forming the same |
KR102423888B1 (ko) * | 2018-08-13 | 2022-07-20 | 주식회사 엘지에너지솔루션 | 스위치 제어 장치 |
US11810873B2 (en) * | 2021-04-07 | 2023-11-07 | GM Global Technology Operations LLC | Solid-state fuse having multiple control circuits |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3018816B2 (ja) * | 1993-02-22 | 2000-03-13 | 株式会社日立製作所 | 半導体素子の保護回路ならびにこれを有する半導体装置 |
JPH08204175A (ja) * | 1995-01-30 | 1996-08-09 | Nec Yamagata Ltd | 縦型mosトランジスタ |
JP3164065B2 (ja) | 1998-06-24 | 2001-05-08 | 日本電気株式会社 | 半導体装置 |
JP2000224861A (ja) * | 1999-01-27 | 2000-08-11 | Fujitsu General Ltd | インバータ装置の保護方法 |
JP4477952B2 (ja) * | 2004-07-09 | 2010-06-09 | 株式会社ルネサステクノロジ | 半導体装置、dc/dcコンバータおよび電源システム |
JP2008067292A (ja) * | 2006-09-11 | 2008-03-21 | Sharp Corp | 過熱遮断回路 |
JP5067786B2 (ja) * | 2007-01-12 | 2012-11-07 | ルネサスエレクトロニクス株式会社 | 電力用半導体装置 |
JP4380726B2 (ja) * | 2007-04-25 | 2009-12-09 | 株式会社デンソー | ブリッジ回路における縦型mosfet制御方法 |
EP2071723B1 (en) * | 2007-12-12 | 2015-02-11 | Renesas Electronics Corporation | Load driving device |
-
2010
- 2010-05-11 JP JP2010109692A patent/JP5486396B2/ja not_active Expired - Fee Related
-
2011
- 2011-04-20 US US13/090,488 patent/US8390340B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20110279152A1 (en) | 2011-11-17 |
US8390340B2 (en) | 2013-03-05 |
JP2011239242A (ja) | 2011-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5486396B2 (ja) | 負荷駆動回路 | |
EP2071726B1 (en) | Load driving device | |
JP5383426B2 (ja) | 異常検出時急速放電回路 | |
US10236679B2 (en) | Circuit apparatus and electronic appliance | |
JP2007166685A (ja) | 逆流防止回路 | |
JP2017224769A (ja) | 半導体集積回路装置 | |
CN107134991B (zh) | 一种用于驱动功率晶体管的驱动电路 | |
JP2009147995A (ja) | 電力供給制御回路 | |
EP2071723B1 (en) | Load driving device | |
US20150288304A1 (en) | Electric Motor Drive Isolation Circuit | |
JP2005269885A (ja) | Hブリッジ回路の駆動装置及びhブリッジ回路の保護方法 | |
JP2012203528A (ja) | ボルテージ・レギュレータ | |
JP2010028522A (ja) | 半導体装置 | |
WO2015114923A1 (ja) | 半導体集積回路装置 | |
JP2019046945A (ja) | 半導体装置 | |
JP2019103015A (ja) | 電源逆接続保護機能を備えた負荷駆動回路 | |
JP2015208111A (ja) | ゲート駆動回路 | |
US20060158039A1 (en) | Circuit for preventing simultaneous on operations | |
JP2009170452A (ja) | 電力スイッチ回路 | |
JP2006245405A (ja) | 半導体装置及びそれを用いたモータ駆動装置 | |
CN111668208A (zh) | 半导体装置 | |
JP2016192838A (ja) | センサ装置 | |
JP4565854B2 (ja) | モータ駆動装置 | |
JP2005224088A (ja) | 負荷保護回路 | |
US10958263B2 (en) | Drive control device, drive circuit, and vehicle |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130215 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131106 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131216 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140207 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140221 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5486396 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |