JP5482051B2 - 半導体基板の製造方法 - Google Patents

半導体基板の製造方法 Download PDF

Info

Publication number
JP5482051B2
JP5482051B2 JP2009219387A JP2009219387A JP5482051B2 JP 5482051 B2 JP5482051 B2 JP 5482051B2 JP 2009219387 A JP2009219387 A JP 2009219387A JP 2009219387 A JP2009219387 A JP 2009219387A JP 5482051 B2 JP5482051 B2 JP 5482051B2
Authority
JP
Japan
Prior art keywords
carbon layer
silicon
carbon
single crystal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009219387A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011071219A (ja
JP2011071219A5 (enExample
Inventor
浩行 島田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2009219387A priority Critical patent/JP5482051B2/ja
Publication of JP2011071219A publication Critical patent/JP2011071219A/ja
Publication of JP2011071219A5 publication Critical patent/JP2011071219A5/ja
Application granted granted Critical
Publication of JP5482051B2 publication Critical patent/JP5482051B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
JP2009219387A 2009-09-24 2009-09-24 半導体基板の製造方法 Expired - Fee Related JP5482051B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009219387A JP5482051B2 (ja) 2009-09-24 2009-09-24 半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009219387A JP5482051B2 (ja) 2009-09-24 2009-09-24 半導体基板の製造方法

Publications (3)

Publication Number Publication Date
JP2011071219A JP2011071219A (ja) 2011-04-07
JP2011071219A5 JP2011071219A5 (enExample) 2012-10-04
JP5482051B2 true JP5482051B2 (ja) 2014-04-23

Family

ID=44016232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009219387A Expired - Fee Related JP5482051B2 (ja) 2009-09-24 2009-09-24 半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JP5482051B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904106A (zh) * 2019-02-28 2019-06-18 云谷(固安)科技有限公司 柔性显示面板及柔性显示面板的制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7259615B2 (ja) * 2019-07-24 2023-04-18 株式会社Sumco ヘテロエピタキシャルウェーハの製造方法
CN118176329A (zh) * 2021-10-06 2024-06-11 信越半导体株式会社 异质外延膜的制作方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06157190A (ja) * 1992-11-20 1994-06-03 Matsushita Electric Ind Co Ltd 炭化珪素薄膜の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904106A (zh) * 2019-02-28 2019-06-18 云谷(固安)科技有限公司 柔性显示面板及柔性显示面板的制备方法
CN109904106B (zh) * 2019-02-28 2021-12-14 云谷(固安)科技有限公司 柔性显示面板及柔性显示面板的制备方法

Also Published As

Publication number Publication date
JP2011071219A (ja) 2011-04-07

Similar Documents

Publication Publication Date Title
JP5896038B2 (ja) ナノカーボン膜の作製方法
JP6631517B2 (ja) ダイヤモンド基板、及び、ダイヤモンド複合基板
JP4227315B2 (ja) 窒化ガリウム単結晶基板の製造方法
JP2005047792A (ja) 微細構造、特にヘテロエピタキシャル微細構造およびそのための方法
CN114525489A (zh) 一种硅基碳化硅薄膜材料制备方法
JP3557457B2 (ja) SiC膜の製造方法、及びSiC多層膜構造の製造方法
WO2016010126A1 (ja) エピタキシャル炭化珪素ウエハの製造方法
JP2009519193A5 (enExample)
TWI222104B (en) Semiconductor wafer and method of fabricating the same
JP5482051B2 (ja) 半導体基板の製造方法
JP2012031011A (ja) グラフェンシート付き基材及びその製造方法
CN106169497B (zh) 碳化硅基板以及碳化硅基板的制造方法
JP3508356B2 (ja) 半導体結晶成長方法及び半導体薄膜
WO2009107188A1 (ja) 単結晶SiCの成長方法
KR100366706B1 (ko) 질화갈륨 단결정 기판의 제조방법
JP2006253617A (ja) SiC半導体およびその製造方法
JP5471258B2 (ja) 半導体基板とその製造方法
JP4511378B2 (ja) SOI基板を用いた単結晶SiC層を形成する方法
JP2010225733A (ja) 半導体基板の製造方法
JP4788397B2 (ja) Iii族窒化物結晶の製造方法
JP2010251523A (ja) 部分soiウェーハの製造方法
JP5145488B2 (ja) サファイア単結晶基板及びその製造方法
JP2009190953A (ja) 半導体基板の製造方法およびそれによって製造される半導体基板
KR102401334B1 (ko) 그래핀과 하이브리드화에 의한 다이아몬드의 밴드갭 제어방법
KR100390442B1 (ko) 고품질 GaN 층 성장 방법

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120131

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120822

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120822

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130530

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130604

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130802

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130820

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131004

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131022

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131219

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140121

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140203

R150 Certificate of patent or registration of utility model

Ref document number: 5482051

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees