JP5481577B1 - Copper foil with carrier - Google Patents

Abstract

A copper foil with a carrier suitable for fine pitch formation is provided.
A copper foil with a carrier comprising a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer, wherein the ultrathin copper layer comprises: A copper foil with a carrier that has been roughened and whose Rz on the surface of the ultrathin copper layer is 1.6 μm or less as measured by a non-contact type roughness meter.
[Selection] Figure 1

Description

  The present invention relates to a copper foil with a carrier. In more detail, this invention relates to the copper foil with a carrier used as a material of a printed wiring board.

  Generally, a printed wiring board is manufactured through a process in which an insulating substrate is bonded to a copper foil to form a copper-clad laminate, and then a conductor pattern is formed on the copper foil surface by etching. In recent years, with the increasing needs for miniaturization and higher performance of electronic devices, higher density mounting of components and higher frequency of signals have progressed, and conductor patterns have become finer (fine pitch) and higher frequency than printed circuit boards. Response is required.

  Recently, copper foils with a thickness of 9 μm or less and further with a thickness of 5 μm or less have been required in response to the fine pitch, but such ultra-thin copper foils have low mechanical strength and are used in the manufacture of printed wiring boards. Copper foil with a carrier has appeared, in which a thick metal foil is used as a carrier, and an ultrathin copper layer is electrodeposited through a release layer, since it is easily broken or wrinkled. After bonding the surface of the ultrathin copper layer to an insulating substrate and thermocompression bonding, the carrier is peeled and removed through the peeling layer. After forming a circuit pattern with a resist on the exposed ultrathin copper layer, the ultrathin copper layer is etched away with a sulfuric acid-hydrogen peroxide etchant (MSAP: Modified-Semi-Additive-Process). Is formed.

  Here, for the surface of the ultrathin copper layer of the copper foil with a carrier that becomes the adhesive surface with the resin, the peel strength between the ultrathin copper layer and the resin base material is mainly sufficient, and the peel strength Is required to be sufficiently retained after high-temperature heating, wet processing, soldering, chemical processing, and the like. As a method of increasing the peel strength between the ultrathin copper layer and the resin base material, generally, a large amount of roughened particles are adhered on the ultrathin copper layer having a large surface profile (unevenness, roughness). The method is representative.

  However, if a very thin copper layer with such a large profile (irregularity, roughness) is used on a semiconductor package substrate that needs to form a particularly fine circuit pattern among printed wiring boards, unnecessary copper particles during circuit etching Will remain, causing problems such as poor insulation between circuit patterns.

  For this reason, in WO2004 / 005588 (Patent Document 1), a copper foil with a carrier that is not subjected to a roughening treatment on the surface of an ultrathin copper layer is used as a copper foil with a carrier for use in a fine circuit including a semiconductor package substrate. It has been tried. The adhesion (peeling strength) between the ultrathin copper layer not subjected to such roughening treatment and the resin is affected by the low profile (unevenness, roughness, roughness) of the general copper foil for printed wiring boards. There is a tendency to decrease when compared. Therefore, the further improvement is calculated | required about copper foil with a carrier.

  Therefore, in Japanese Patent Application Laid-Open No. 2007-007937 (Patent Document 2) and Japanese Patent Application Laid-Open No. 2010-006071 (Patent Document 3), the surface of the ultrathin copper foil with carrier that contacts (adheres) the polyimide resin substrate is Ni. It is described that a layer or / and a Ni alloy layer are provided, a chromate layer is provided, a Cr layer or / and a Cr alloy layer are provided, a Ni layer and a chromate layer are provided, and a Ni layer and a Cr layer are provided. Has been. By providing these surface treatment layers, the adhesion strength between the polyimide resin substrate and the ultra-thin copper foil with carrier is not roughened, or the desired adhesive strength is achieved while reducing the degree of the roughening treatment (miniaturization). It has gained. Further, it is described that the surface treatment is performed with a silane coupling agent or the rust prevention treatment is performed.

WO2004 / 005588 JP 2007-007937 A JP 2010-006071 A

  In the development of a copper foil with a carrier, the emphasis has so far been on ensuring the peel strength between the ultrathin copper layer and the resin substrate. For this reason, the fine pitch has not been sufficiently studied yet, and there is still room for improvement. Then, this invention makes it a subject to provide the copper foil with a carrier suitable for fine pitch formation. Specifically, it is an object to provide a copper foil with a carrier capable of forming wiring finer than L / S = 20 μm / 20 μm, which has been considered to be a limit that can be formed by conventional MSAP.

  In order to achieve the above-mentioned object, the present inventors have conducted intensive research. It has been found that a roughened surface with low roughness can be formed. And it discovered that the said copper foil with a carrier was very effective for fine pitch formation.

  The present invention has been completed on the basis of the above knowledge, and in one aspect, includes a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer. A copper foil with a carrier, the ultrathin copper layer is roughened, and the Rz of the surface of the ultrathin copper layer is 1.6 μm or less as measured by a non-contact type roughness meter. is there.

  In another aspect, the present invention is a copper foil with a carrier comprising a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer, The ultrathin copper layer is roughened, and Ra on the surface of the ultrathin copper layer is a copper foil with a carrier as measured by a non-contact type roughness meter and is 0.3 μm or less.

  In yet another aspect, the present invention is a copper foil with a carrier comprising a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer. The ultrathin copper layer is roughened, and Rt on the surface of the ultrathin copper layer is a copper foil with a carrier that is 2.3 μm or less as measured with a non-contact type roughness meter.

  In one embodiment of the copper foil with a carrier according to the present invention, Rz on the surface of the ultrathin copper layer is 1.4 μm or less as measured with a non-contact type roughness meter.

  In another embodiment of the copper foil with a carrier according to the present invention, Ra on the surface of the ultrathin copper layer is 0.24 μm or less as measured by a non-contact type roughness meter.

  In still another embodiment of the copper foil with a carrier according to the present invention, Rt on the surface of the ultrathin copper layer is 1.8 μm or less as measured by a non-contact type roughness meter.

  In still another embodiment of the copper foil with a carrier according to the present invention, the ultrathin copper layer surface has Ssk of −0.3 to 0.3.

  In still another embodiment of the copper foil with a carrier according to the present invention, the surface of the ultrathin copper layer has a Sku of 2.7 to 3.3.

  In yet another embodiment of the copper foil with a carrier according to the present invention, a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer were provided. It is copper foil with a carrier, Comprising: The ultra-thin copper layer is roughened and the surface area ratio of the ultra-thin copper layer surface is 1.05-1.5.

  In yet another embodiment of the copper foil with a carrier according to the present invention, the surface area ratio of the ultrathin copper layer surface is 1.05 to 1.5.

In still another embodiment of the copper foil with a carrier according to the present invention, the volume per area 66524 μm ^{2 of the} surface of the ultrathin copper layer is 300000 μm ³ or more.

  In yet another aspect, the present invention is a copper clad laminate produced using the carrier-attached copper foil according to the present invention.

  In still another aspect, the present invention is a printed wiring board manufactured using the carrier-attached copper foil according to the present invention.

  In still another aspect, the present invention is a printed circuit board manufactured using a copper foil with a carrier.

In another aspect of the present invention,
Preparing a copper foil with a carrier and an insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the copper foil with carrier and the insulating substrate, a copper clad laminate is formed through a step of peeling the carrier of the copper foil with carrier,
Thereafter, the printed wiring board manufacturing method includes a step of forming a circuit by any one of a semi-additive method, a subtractive method, a partly additive method, or a modified semi-additive method.

  The copper foil with a carrier according to the present invention is suitable for fine pitch formation, for example, a wiring finer than L / S = 20 μm / 20 μm, which is considered to be a limit that can be formed by the MSAP process, for example, L / S = 15 μm / It becomes possible to form fine wiring of 15 μm.

It is a SEM photograph of the ultrathin copper layer M surface in Example 1 and Example 2.

<1. Career>
A copper foil is used as a carrier that can be used in the present invention. The carrier is typically provided in the form of rolled copper foil or electrolytic copper foil. In general, the electrolytic copper foil is produced by electrolytic deposition of copper from a copper sulfate plating bath onto a drum of titanium or stainless steel, and the rolled copper foil is produced by repeating plastic working and heat treatment with a rolling roll. In addition to high-purity copper such as tough pitch copper and oxygen-free copper, the copper foil material is, for example, Sn-containing copper, Ag-containing copper, copper alloy added with Cr, Zr, Mg, etc., and Corson-based added with Ni, Si, etc. Copper alloys such as copper alloys can also be used. In addition, when the term “copper foil” is used alone in this specification, a copper alloy foil is also included.

  The thickness of the carrier that can be used in the present invention is not particularly limited, but may be appropriately adjusted to a thickness suitable for serving as a carrier, for example, 12 μm or more. However, if it is too thick, the production cost increases, so it is generally preferable that the thickness is 70 μm or less. Accordingly, the thickness of the carrier is typically 12-70 μm, more typically 18-35 μm.

<2. Release layer>
A release layer is provided on the carrier. As a peeling layer, it can be set as the arbitrary peeling layers known to those skilled in the art in copper foil with a carrier. For example, the release layer may be one or more of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, alloys thereof, hydrates thereof, oxides thereof, or organic substances. It is preferable to form with the layer containing. The release layer may be composed of a plurality of layers.

  In one embodiment of the present invention, the release layer is a single metal layer made of any one element of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, and Al elements from the carrier side, Or, an alloy layer made of one or more elements selected from the element group of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, and Al, and Cr, Ni, Co, It is comprised from the layer which consists of a hydrate or oxide of 1 or more elements selected from the element group of Fe, Mo, Ti, W, P, Cu, and Al.

  The release layer is preferably composed of two layers of Ni and Cr. In this case, the Ni layer is laminated in contact with the interface with the copper foil carrier and the Cr layer is in contact with the interface with the ultrathin copper layer.

  The release layer can be obtained by wet plating such as electroplating, electroless plating and immersion plating, or dry plating such as sputtering, CVD and PDV. Electroplating is preferable from the viewpoint of cost.

<3. Ultrathin copper layer>
An ultrathin copper layer is provided on the release layer. The ultra-thin copper layer can be formed by electroplating using an electrolytic bath such as copper sulfate, copper pyrophosphate, copper sulfamate, copper cyanide, etc., and is used in general electrolytic copper foil with high current density. Since a copper foil can be formed, a copper sulfate bath is preferable. The thickness of the ultrathin copper layer is not particularly limited, but is generally thinner than the carrier, for example, 12 μm or less. It is typically 0.5-12 μm, more typically 2-5 μm.

<4. Roughening>
On the surface of the ultrathin copper layer, a roughening treatment layer is provided by performing a roughening treatment, for example, for improving the adhesion to the insulating substrate. The roughening treatment can be performed, for example, by forming roughened particles with copper or a copper alloy. The roughening treatment layer is preferably composed of fine particles from the viewpoint of fine pitch formation. Regarding the electroplating conditions for forming the roughened particles, if the current density is increased, the copper concentration in the plating solution is decreased, or the amount of coulomb is increased, the particles tend to become finer.

  The roughening layer is composed of electrodeposited grains made of any single element selected from the group consisting of copper, nickel, phosphorus, tungsten, arsenic, molybdenum, chromium, cobalt, and zinc, or an alloy containing at least one of them. can do.

  Moreover, after roughening treatment, secondary particles, tertiary particles and / or rust prevention layers are formed with nickel, cobalt, copper, zinc alone or an alloy, etc., and further chromate treatment, silane coupling treatment, etc. on the surface You may perform the process of. That is, one or more layers selected from the group consisting of a rust preventive layer, a chromate treatment layer, and a silane coupling treatment layer may be formed on the surface of the roughening treatment layer.

  The surface of the ultrathin copper layer after various surface treatments such as roughening treatment (also referred to as “roughened surface”) is Rz (10-point average roughness) when measured with a non-contact type roughness meter. ) Of 1.6 μm or less is extremely advantageous from the viewpoint of fine pitch formation. Rz is preferably 1.5 μm or less, more preferably 1.4 μm or less, and even more preferably 1.3 μm or less. However, Rz is preferably 0.01 μm or more, and more preferably 0.1 μm or more, because if the Rz is too small, the adhesion with the resin is reduced.

  The surface of the ultrathin copper layer after being subjected to various surface treatments such as roughening treatment (also referred to as “roughened surface”) is Ra (arithmetic mean roughness) when measured with a non-contact type roughness meter. Is 0.30 μm or less from the viewpoint of fine pitch formation. Ra is preferably 0.27 μm or less, 0.26 μm or less, 0.24 μm or less, more preferably 0.23 μm or less, and even more preferably 0.20 μm or less. However, Ra is preferably 0.005 μm or more, more preferably 0.009 μm or more, 0.01 μm or more, or 0.02 μm or more, because if it becomes too small, the adhesive strength with the resin is reduced. .

  The surface of the ultrathin copper layer after being subjected to various surface treatments such as roughening treatment (also referred to as “roughened surface”) has an Rt of 2.3 μm or less when measured with a non-contact type roughness meter. This is extremely advantageous from the viewpoint of fine pitch formation. Rt is preferably 2.2 μm or less, preferably 2.1 μm or less, preferably 2.0 μm or less, more preferably 1.9 μm or less, more preferably 1.8 μm or less, and even more preferably 1.5 μm. It is as follows. However, Rt is preferably 0.01 μm or more, and more preferably 0.1 μm or more, because if the Rt is too small, the adhesion with the resin is reduced.

  In addition, the surface of the ultrathin copper layer after various surface treatments such as roughening treatment has an Ssk (skewness) of −0.3 to 0.3 when measured with a non-contact type roughness meter. Is preferable from the viewpoint of fine pitch formation. Ssk is preferably −0.2 to 0.2, more preferably −0.1 to 0.1.

  Further, the surface of the ultrathin copper layer after various surface treatments such as roughening treatment may have a Sku (Cultosis) of 2.7 to 3.3 when measured with a non-contact type roughness meter. It is preferable from the viewpoint of fine pitch formation. Sku is preferably 2.8 to 3.2, and more preferably 2.9 to 3.1.

  In the present invention, the roughness parameters of Rz and Ra on the surface of the ultrathin copper layer conform to JIS B0601-1994, and the roughness parameter of Rt conforms to JIS B0601-2001, the roughness of Ssk and Sku. The parameters are measured with a non-contact type roughness meter in accordance with ISO 25178 draft.

  In addition, in the case where an insulating substrate such as a resin is bonded to the surface of an ultrathin copper layer, such as a printed wiring board or a copper clad laminate, by melting and removing the insulating substrate, the copper circuit or copper foil surface, The aforementioned surface roughness (Ra, Rt, Rz) can be measured.

In order to form a fine pitch, it is also important to control the volume of the roughened surface in order to reduce the etching amount of the roughened particle layer. The volume here refers to a value measured with a laser microscope and serves as an index for evaluating the volume of the roughened particles present on the roughened surface. When the volume of the roughened surface is large, the adhesion between the ultrathin copper layer and the resin tends to increase. And, when the adhesion between the ultrathin copper layer and the resin is increased, the migration resistance tends to be improved. Specifically, the volume is preferably 300,000 μm ³ or more, more preferably 350,000 μm ³ or more per area 66524 μm ² of the roughened surface. However, increases the amount of etching the volume is too large, since not form fine pitch, volume may preferably be 500000Myuemu ³ or less, and more preferably, 450000Myuemu ³ or less.

  Furthermore, in order to form fine pitch, it is also important to control the surface area ratio of the roughened surface in order to ensure adhesion with the resin by the finely roughened particles. The surface area ratio here is a value measured by a laser microscope, and is a value of actual area / area when the area and the actual area are measured. The area refers to the measurement reference area, and the actual area refers to the surface area in the measurement reference area. If the surface area ratio is too large, the adhesion strength increases, but the etching amount increases and fine pitch cannot be formed. On the other hand, if the surface area ratio is too small, the adhesion strength cannot be ensured. 0.07 to 1.47 is preferable, 1.09 to 1.4 is preferable, and 1.1 to 1.3 is more preferable.

<5. Copper foil with carrier>
Thus, the copper foil with a carrier provided with the copper foil carrier, the peeling layer laminated | stacked on the copper foil carrier, and the ultra-thin copper layer laminated | stacked on the peeling layer is manufactured. The method of using the copper foil with carrier itself is well known to those skilled in the art. Base epoxy resin, glass cloth / glass nonwoven fabric composite base epoxy resin and glass cloth base epoxy resin, polyester film, polyimide film, etc. The printed wiring board can be finally manufactured by etching the ultrathin copper layer adhered to the substrate into a desired conductor pattern. Furthermore, a printed circuit board is completed by mounting electronic components on the printed wiring board. Below, some examples of the manufacturing process of the printed wiring board using the copper foil with a carrier which concerns on this invention are shown.

  In one embodiment of a method for producing a printed wiring board according to the present invention, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention, a step of laminating the copper foil with a carrier and an insulating substrate, and with the carrier After laminating the copper foil and the insulating substrate so that the ultrathin copper layer side faces the insulating substrate, a copper-clad laminate is formed through a process of peeling the carrier of the copper foil with carrier, and then a semi-additive method, a modified semi-conductor A step of forming a circuit by any one of an additive method, a partial additive method, and a subtractive method. It is also possible for the insulating substrate to contain an inner layer circuit.

  In the present invention, the semi-additive method refers to a method in which a thin electroless plating is performed on an insulating substrate or a copper foil seed layer, a pattern is formed, and then a conductive pattern is formed using electroplating and etching.

Therefore, in one embodiment of a method for producing a printed wiring board according to the present invention using a semi-additive method, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the copper foil with carrier and the insulating substrate, the step of peeling the carrier of the copper foil with carrier,
Removing all of the ultrathin copper layer exposed by peeling the carrier by a method such as etching or plasma using a corrosive solution such as acid,
Providing a through hole or / and a blind via in the resin exposed by removing the ultrathin copper layer by etching;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the resin and the through hole or / and the blind via;
Providing a plating resist on the electroless plating layer;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing the electroless plating layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

In another embodiment of the method for producing a printed wiring board according to the present invention using a semi-additive method, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the copper foil with carrier and the insulating substrate, the step of peeling the carrier of the copper foil with carrier,
Removing all of the ultrathin copper layer exposed by peeling the carrier by a method such as etching or plasma using a corrosive solution such as acid,
Providing an electroless plating layer on the surface of the resin exposed by removing the ultrathin copper layer by etching;
Providing a plating resist on the electroless plating layer;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing the electroless plating layer and the ultrathin copper layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

  In the present invention, the modified semi-additive method is a method in which a metal foil is laminated on an insulating layer, a non-circuit forming portion is protected by a plating resist, and the copper is thickened in the circuit forming portion by electrolytic plating, and then the resist is removed. Then, a method of forming a circuit on the insulating layer by removing the metal foil other than the circuit forming portion by (flash) etching is indicated.

Therefore, in one embodiment of the method for producing a printed wiring board according to the present invention using the modified semi-additive method, the step of preparing the copper foil with carrier and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the copper foil with carrier and the insulating substrate, the step of peeling the carrier of the copper foil with carrier,
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the through hole or / and the blind via;
Providing a plating resist on the surface of the ultrathin copper layer exposed by peeling the carrier,
Forming a circuit by electrolytic plating after providing the plating resist;
Removing the plating resist;
Removing the ultra-thin copper layer exposed by removing the plating resist by flash etching;
including.

In another embodiment of the method for manufacturing a printed wiring board according to the present invention using the modified semi-additive method, the step of preparing the copper foil with carrier and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the copper foil with carrier and the insulating substrate, the step of peeling the carrier of the copper foil with carrier,
Providing a plating resist on the exposed ultrathin copper layer by peeling off the carrier;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing the electroless plating layer and the ultrathin copper layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

  In the present invention, the partial additive method means that a catalyst circuit is formed on a substrate provided with a conductor layer, and if necessary, a substrate provided with holes for through holes or via holes, and etched to form a conductor circuit. Then, after providing a solder resist or a plating resist as necessary, it refers to a method of manufacturing a printed wiring board by thickening through holes, via holes, etc. on the conductor circuit by electroless plating.

Therefore, in one embodiment of a method for producing a printed wiring board according to the present invention using a partly additive method, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the copper foil with carrier and the insulating substrate, the step of peeling the carrier of the copper foil with carrier,
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Applying catalyst nuclei to the region containing the through-holes and / or blind vias;
Providing an etching resist on the surface of the ultrathin copper layer exposed by peeling the carrier,
Exposing the etching resist to form a circuit pattern;
Removing the ultrathin copper layer and the catalyst nucleus by a method such as etching or plasma using a corrosive solution such as an acid to form a circuit;
Removing the etching resist;
A step of providing a solder resist or a plating resist on the surface of the insulating substrate exposed by removing the ultrathin copper layer and the catalyst core by a method such as etching or plasma using a corrosive solution such as an acid;
Providing an electroless plating layer in a region where the solder resist or plating resist is not provided,
including.

  In the present invention, the subtractive method refers to a method of forming a conductor pattern by selectively removing unnecessary portions of a copper foil on a copper clad laminate by etching or the like.

Therefore, in one embodiment of a method for manufacturing a printed wiring board according to the present invention using a subtractive method, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the copper foil with carrier and the insulating substrate, the step of peeling the carrier of the copper foil with carrier,
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the through hole or / and the blind via;
Providing an electroplating layer on the surface of the electroless plating layer;
A step of providing an etching resist on the surface of the electrolytic plating layer or / and the ultrathin copper layer;
Exposing the etching resist to form a circuit pattern;
Removing the ultrathin copper layer and the electroless plating layer and the electrolytic plating layer by a method such as etching or plasma using a corrosive solution such as an acid to form a circuit;
Removing the etching resist;
including.

In another embodiment of the method for producing a printed wiring board according to the present invention using a subtractive method, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the copper foil with carrier and the insulating substrate, the step of peeling the carrier of the copper foil with carrier,
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the through hole or / and the blind via;
Forming a mask on the surface of the electroless plating layer;
Providing an electroplating layer on the surface of the electroless plating layer on which no mask is formed;
A step of providing an etching resist on the surface of the electrolytic plating layer or / and the ultrathin copper layer;
Exposing the etching resist to form a circuit pattern;
Removing the ultra-thin copper layer and the electroless plating layer by a method such as etching or plasma using a corrosive solution such as an acid to form a circuit;
Removing the etching resist;
including.

  The process of providing a through hole or / and a blind via and the subsequent desmear process may not be performed.

  The present invention will be described in more detail with reference to the following examples. However, the present invention is not limited to these examples.

1. Production of copper foil with carrier <Example 1>
As a copper foil carrier, a long electrolytic copper foil having a thickness of 35 μm (JTC manufactured by JX Nippon Mining & Metals) was prepared. An Ni layer having an adhesion amount of 4000 μg / dm ² was formed on the shiny surface of the copper foil by electroplating using a roll-to-roll type continuous plating line under the following conditions.

-Ni layer Nickel sulfate: 250-300 g / L
Nickel chloride: 35 to 45 g / L
Nickel acetate: 10-20g / L
Trisodium citrate: 15-30 g / L
Brightener: Saccharin, butynediol, etc. Sodium dodecyl sulfate: 30-100 ppm
pH: 4-6
Bath temperature: 50-70 ° C
Current density: 3-15 A / dm ²

After washing with water and pickling, a Cr layer having an adhesion amount of 11 μg / dm ² was deposited on the Ni layer by electrolytic chromate treatment under the following conditions on a roll-to-roll type continuous plating line. .
Electrolytic chromate treatment Liquid composition: potassium dichromate 1-10 g / L, zinc 0-5 g / L
pH: 3-4
Liquid temperature: 50-60 degreeC
Current density: 0.1-2.6 A / dm ²
Coulomb amount: 0.5-30 As / dm ²

Subsequently, on the roll-to-roll type continuous plating line, an ultrathin copper layer having a thickness of 3 μm was formed on the Cr layer by electroplating under the following conditions to produce a copper foil with a carrier. In this example, a copper foil with a carrier having an ultrathin copper layer thickness of 2, 5, and 10 μm was also manufactured and evaluated in the same manner as in the example of the ultrathin copper layer thickness of 3 μm. The result was the same regardless of the thickness.
-Ultrathin copper layer Copper concentration: 30-120 g / L
H ₂ SO ₄ concentration: 20 to 120 g / L
Electrolyte temperature: 20-80 ° C
Current density: 10 to 100 A / dm ²

Next, the following roughening treatment 1, roughening treatment 2, rust prevention treatment, chromate treatment, and silane coupling treatment were performed in this order on the surface of the ultrathin copper layer.
・ Roughening 1
(Liquid composition 1)
Cu: 10-30 g / L
H ₂ SO _4: 10~150g / L
W: 0 to 50 mg / L
Sodium dodecyl sulfate: 0 to 50 mg / L
As: 0 to 200 mg / L
(Electroplating condition 1)
Temperature: 30-70 ° C
Current density: 25 to 110 A / dm ²
Roughening coulomb amount: 50 to 500 As / dm ²
Plating time: 0.5-20 seconds, roughening treatment 2
(Liquid composition 2)
Cu: 20-80 g / L
H ₂ SO ₄ : 50 to 200 g / L
(Electroplating condition 2)
Temperature: 30-70 ° C
Current density: 5 to 50 A / dm ²
Roughening coulomb amount: 50 to 300 As / dm ²
Plating time: 1 to 60 seconds, rust prevention treatment (liquid composition)
NaOH: 40-200 g / L
NaCN: 70 to 250 g / L
CuCN: 50-200 g / L
Zn (CN) ₂ : _{2 to} 100 g / L
As ₂ O ₃ : 0.01 to 1 g / L
(Liquid temperature)
40-90 ° C
(Current condition)
Current density: 1 to 50 A / dm ²
Plating time: 1 to 20 seconds, chromate treatment K ₂ Cr ₂ O ₇ (Na ₂ Cr ₂ O ₇ or CrO ₃ ): 2 to 10 g / L
NaOH or KOH: 10-50 g / L
ZnOH or ZnSO ₄ .7H ₂ O: 0.05 to 10 g / L
pH: 7-13
Bath temperature: 20-80 ° C
Current density: 0.05 to 5 A / dm ²
Time: 5 to 30 seconds. Silane coupling treatment After applying 0.1 vol% to 0.3 vol% of 3-glycidoxypropyltrimethoxysilane aqueous solution, 0.1 to 10 in air at 100 to 200 ° C. Dry and heat for seconds.

<Example 2>
After forming an ultrathin copper layer on the copper foil carrier under the same conditions as in Example 1, the following roughening treatment 1, roughening treatment 2, rust prevention treatment, chromate treatment, and silane coupling treatment were performed in this order. went. The thickness of the ultrathin copper foil was 3 μm.
・ Roughening 1
Liquid composition: Copper 10-20 g / L, sulfuric acid 50-100 g / L
Liquid temperature: 25-50 degreeC
Current density: 1 to 58 A / dm ²
Coulomb amount: 4 to 81 As / dm ²
・ Roughening 2
Liquid composition: Copper 10-20 g / L, nickel 5-15 g / L, cobalt 5-15 g / L
pH: 2-3
Liquid temperature: 30-50 degreeC
Current density: 24 to 50 A / dm ²
Coulomb amount: 34 to 48 As / dm ²
・ Rust prevention treatment Liquid composition: Nickel 5-20g / L, Cobalt 1-8g / L
pH: 2-3
Liquid temperature: 40-60 degreeC
Current density: 5 to 20 A / dm ²
Coulomb amount: 10-20 As / dm ²
-Chromate treatment Liquid composition: Potassium dichromate 1-10 g / L, Zinc 0-5 g / L
pH: 3-4
Liquid temperature: 50-60 degreeC
Current density: 0 to ^{2 A} / dm ² (Can also be electroless because of immersion chromate treatment)
Coulomb amount: 0 to ^{2 As} / dm ² (can also be electroless because of immersion chromate treatment)
Silane coupling treatment Application of diaminosilane aqueous solution (diaminosilane concentration: 0.1 to 0.5 wt%)

<Example 3>
After forming the ultrathin copper layer on the copper foil carrier under the same conditions as in Example 1, the following roughening treatment 1, roughening treatment 2, rust prevention treatment, chromate treatment, and The silane coupling treatment was performed in this order. The thickness of the ultrathin copper foil was 3 μm.
・ Roughening 1
(Liquid composition 1)
Cu: 10-30 g / L
H ₂ SO _4: 10~150g / L
As: 0 to 200 mg / L
(Electroplating condition 1)
Temperature: 30-70 ° C
Current density: 25 to 110 A / dm ²
Roughening coulomb amount: 50 to 500 As / dm ²
Plating time: 0.5-20 seconds, roughening treatment 2
(Liquid composition 2)
Cu: 20-80 g / L
H ₂ SO ₄ : 50 to 200 g / L
(Electroplating condition 2)
Temperature: 30-70 ° C
Current density: 5 to 50 A / dm ²
Roughening coulomb amount: 50 to 300 As / dm ²
Plating time: 1 to 60 seconds, rust prevention treatment (liquid composition)
NaOH: 40-200 g / L
NaCN: 70 to 250 g / L
CuCN: 50-200 g / L
Zn (CN) ₂ : _{2 to} 100 g / L
As ₂ O ₃ : 0.01 to 1 g / L
(Liquid temperature)
40-90 ° C
(Current condition)
Current density: 1 to 50 A / dm ²
Plating time: 1 to 20 seconds, chromate treatment K ₂ Cr ₂ O ₇ (Na ₂ Cr ₂ O ₇ or CrO ₃ ): 2 to 10 g / L
NaOH or KOH: 10-50 g / L
ZnOH or ZnSO ₄ .7H ₂ O: 0.05 to 10 g / L
pH: 7-13
Bath temperature: 20-80 ° C
Current density: 0.05 to 5 A / dm ²
Time: 5 to 30 seconds. Silane coupling treatment After applying 0.1 vol% to 0.3 vol% of 3-glycidoxypropyltrimethoxysilane aqueous solution, 0.1 to 10 in air at 100 to 200 ° C. Dry and heat for seconds.

（上記化学式中、Ｒ₁及びＲ₂はヒドロキシアルキル基、エーテル基、アリール基、芳香族置換アルキル基、不飽和炭化水素基、アルキル基からなる一群から選ばれるものである。ここでは、Ｒ₁及びＲ₂は共にメチル基とした。）
上記化合物は例えばナガセケムテックス株式会社製デコナール Ｅｘ−３１４とジメチルアミンを所定量混合させ、６０℃で３時間反応を行うことで得ることができる。 <Example 4>
After forming the Ni layer and the Cr layer on the copper foil carrier under the same conditions as in Example 1, the ultrathin copper layer having a thickness of 3 μm was formed on the Cr layer on the roll-to-roll continuous plating line. The copper foil with a carrier was manufactured by electroplating under the conditions described above. In this example, a copper foil with a carrier having an ultrathin copper layer thickness of 2, 5, and 10 μm was also manufactured, and evaluated in the same manner as in the example with an ultrathin copper layer thickness of 3 μm. The result was almost the same regardless of the thickness.
-Ultrathin copper layer Copper concentration: 30-120 g / L
H ₂ SO ₄ concentration: 20 to 120 g / L
Bis (3sulfopropyl) disulfide concentration: 10-100 ppm
Tertiary amine compound: 10 to 100 ppm
Chlorine: 10-100ppm
Electrolyte temperature: 20-80 ° C
Current density: 10 to 100 A / dm ²
In addition, the following compounds were used as the above-mentioned tertiary amine compound.

(In the above chemical formula, R ₁ and R ₂ are selected from the group consisting of a hydroxyalkyl group, an ether group, an aryl group, an aromatic substituted alkyl group, an unsaturated hydrocarbon group, and an alkyl group. Here, R ₁ And R ₂ were both methyl groups.)
The above compound can be obtained, for example, by mixing a predetermined amount of Deconal Ex-314 manufactured by Nagase ChemteX Corporation and dimethylamine and reacting at 60 ° C. for 3 hours.

After the ultrathin copper layer was formed on the copper foil carrier, the following roughening treatment 1, roughening treatment 2, rust prevention treatment, chromate treatment, and silane coupling treatment were performed in this order.
・ Roughening 1
Liquid composition: Copper 10-20 g / L, sulfuric acid 50-100 g / L
Liquid temperature: 25-50 degreeC
Current density: 1 to 58 A / dm ²
Coulomb amount: 4 to 81 As / dm ²
・ Roughening 2
Liquid composition: Copper 10-20 g / L, nickel 5-15 g / L, cobalt 5-15 g / L
pH: 2-3
Liquid temperature: 30-50 degreeC
Current density: 24 to 50 A / dm ²
Coulomb amount: 34 to 48 As / dm ²
・ Rust prevention treatment Liquid composition: Nickel 5-20g / L, Cobalt 1-8g / L
pH: 2-3
Liquid temperature: 40-60 degreeC
Current density: 5 to 20 A / dm ²
Coulomb amount: 10-20 As / dm ²
-Chromate treatment Liquid composition: Potassium dichromate 1-10 g / L, Zinc 0-5 g / L
pH: 3-4
Liquid temperature: 50-60 degreeC
Current density: 0 to ^{2 A} / dm ² (Can also be electroless because of immersion chromate treatment)
Coulomb amount: 0 to ^{2 As} / dm ² (can also be electroless because of immersion chromate treatment)
Silane coupling treatment Application of diaminosilane aqueous solution (diaminosilane concentration: 0.1 to 0.5 wt%)

（上記化学式中、Ｒ₁及びＲ₂はヒドロキシアルキル基、エーテル基、アリール基、芳香族置換アルキル基、不飽和炭化水素基、アルキル基からなる一群から選ばれるものである。ここでは、Ｒ₁及びＲ₂は共にメチル基とした。）
上記化合物は例えばナガセケムテックス株式会社製デコナール Ｅｘ−３１４とジメチルアミンを所定量混合させ、６０℃で３時間反応を行うことで得ることができる。） <Example 5>
After forming the Ni layer and the Cr layer on the copper foil carrier under the same conditions as in Example 1, the ultrathin copper layer having a thickness of 3 μm was formed on the Cr layer on the roll-to-roll continuous plating line. The copper foil with a carrier was manufactured by electroplating under the conditions described above. In this example, a copper foil with a carrier having an ultrathin copper layer thickness of 2, 5, and 10 μm was also manufactured, and evaluated in the same manner as in the example with an ultrathin copper layer thickness of 3 μm. The result was almost the same regardless of the thickness.
-Ultrathin copper layer Copper concentration: 30-120 g / L
H ₂ SO ₄ concentration: 20 to 120 g / L
Bis (3sulfopropyl) disulfide concentration: 10-100 ppm
Tertiary amine compound: 10 to 100 ppm
Chlorine: 10-100ppm
Electrolyte temperature: 20-80 ° C
Current density: 10 to 100 A / dm ²
In addition, the following compounds were used as the above-mentioned tertiary amine compound.

(In the above chemical formula, R ₁ and R ₂ are selected from the group consisting of a hydroxyalkyl group, an ether group, an aryl group, an aromatic substituted alkyl group, an unsaturated hydrocarbon group, and an alkyl group. Here, R ₁ And R ₂ were both methyl groups.)
The above compound can be obtained, for example, by mixing a predetermined amount of Deconal Ex-314 manufactured by Nagase ChemteX Corporation and dimethylamine and reacting at 60 ° C. for 3 hours. )

After the ultrathin copper layer was formed on the copper foil carrier, the following roughening treatment 1, roughening treatment 2, rust prevention treatment, chromate treatment, and silane coupling treatment were performed in this order.
・ Roughening 1
(Liquid composition 1)
Cu: 10-30 g / L
H ₂ SO _4: 10~150g / L
W: 0.1 to 50 mg / L
Sodium dodecyl sulfate: 0.1 to 50 mg / L
As: 0.1-200 mg / L
(Electroplating condition 1)
Temperature: 30-70 ° C
Current density: 25 to 110 A / dm ²
Roughening coulomb amount: 50 to 500 As / dm ²
Plating time: 0.5-20 seconds, roughening treatment 2
(Liquid composition 2)
Cu: 20-80 g / L
H ₂ SO ₄ : 50 to 200 g / L
(Electroplating condition 2)
Temperature: 30-70 ° C
Current density: 5 to 50 A / dm ²
Roughening coulomb amount: 50 to 300 As / dm ²
Plating time: 1 to 60 seconds, rust prevention treatment (liquid composition)
NaOH: 40-200 g / L
NaCN: 70 to 250 g / L
CuCN: 50-200 g / L
Zn (CN) ₂ : _{2 to} 100 g / L
As ₂ O ₃ : 0.01 to 1 g / L
(Liquid temperature)
40-90 ° C
(Current condition)
Current density: 1 to 50 A / dm ²
Plating time: 1 to 20 seconds, chromate treatment K ₂ Cr ₂ O ₇ (Na ₂ Cr ₂ O ₇ or CrO ₃ ): 2 to 10 g / L
NaOH or KOH: 10-50 g / L
ZnOH or ZnSO ₄ .7H ₂ O: 0.05 to 10 g / L
pH: 7-13
Bath temperature: 20-80 ° C
Current density: 0.05 to 5 A / dm ²
Time: 5 to 30 seconds. Silane coupling treatment After applying 0.1 vol% to 0.3 vol% of 3-glycidoxypropyltrimethoxysilane aqueous solution, 0.1 to 10 in air at 100 to 200 ° C. Dry and heat for seconds.

<Comparative Example 1>
After forming the Ni layer and the Cr layer on the copper foil carrier under the same conditions as in Example 1, the ultrathin copper layer having a thickness of 3 μm was formed on the Cr layer on the roll-to-roll continuous plating line. The copper foil with a carrier was manufactured by electroplating under the conditions described above.
-Ultrathin copper layer Copper concentration: 30-120 g / L
H ₂ SO ₄ concentration: 20 to 120 g / L
Electrolyte temperature: 20-80 ° C
Current density: 5-9 A / dm ²
・ Roughening 1
(Liquid composition 1)
Cu: 10-30 g / L
H ₂ SO _4: 10~150g / L
As: 0 to 200 mg / L
(Electroplating condition 1)
Temperature: 30-70 ° C
Current density: 25 to 110 A / dm ²
Roughening coulomb amount: 50 to 500 As / dm ²
Plating time: 0.5-20 seconds, roughening treatment 2
(Liquid composition 2)
Cu: 20-80 g / L
H ₂ SO ₄ : 50 to 200 g / L
(Electroplating condition 2)
Temperature: 30-70 ° C
Current density: 5 to 50 A / dm ²
Roughening coulomb amount: 50 to 300 As / dm ²
Plating time: 1 to 60 seconds, rust prevention treatment (liquid composition)
NaOH: 40-200 g / L
NaCN: 70 to 250 g / L
CuCN: 50-200 g / L
Zn (CN) ₂ : _{2 to} 100 g / L
As ₂ O ₃ : 0.01 to 1 g / L
(Liquid temperature)
40-90 ° C
(Current condition)
Current density: 1 to 50 A / dm ²
Plating time: 1 to 20 seconds, chromate treatment K ₂ Cr ₂ O ₇ (Na ₂ Cr ₂ O ₇ or CrO ₃ ): 2 to 10 g / L
NaOH or KOH: 10-50 g / L
ZnOH or ZnSO ₄ .7H ₂ O: 0.05 to 10 g / L
pH: 7-13
Bath temperature: 20-80 ° C
Current density: 0.05 to 5 A / dm ²
Time: 5 to 30 seconds. Silane coupling treatment After applying 0.1 vol% to 0.3 vol% of 3-glycidoxypropyltrimethoxysilane aqueous solution, 0.1 to 10 in air at 100 to 200 ° C. Dry and heat for seconds.

<Comparative example 2>
After forming the Ni layer and the Cr layer on the copper foil carrier under the same conditions as in Example 1, the ultrathin copper layer having a thickness of 3 μm was formed on the Cr layer on the roll-to-roll continuous plating line. The copper foil with a carrier was manufactured by electroplating under the conditions described above.
-Ultrathin copper layer Copper concentration: 30-120 g / L
H ₂ SO ₄ concentration: 20 to 120 g / L
Electrolyte temperature: 20-80 ° C
Current density: 10 to 100 A / dm ²
・ Roughening 1
(Liquid composition 1)
Cu: 10-30 g / L
H ₂ SO _4: 10~150g / L
W: 0 to 50 mg / L
Sodium dodecyl sulfate: 0 to 50 mg / L
As: 0 to 200 mg / L
(Electroplating condition 1)
Temperature: 30-70 ° C
Current density: 25 to 110 A / dm ²
Roughening coulomb amount: 50 to 500 As / dm ²
Plating time: 0.5-20 seconds, roughening treatment 2
(Liquid composition 2)
Cu: 20-80 g / L
H ₂ SO ₄ : 50 to 200 g / L
(Electroplating condition 2)
Temperature: 30-70 ° C
Current density: 5 to 50 A / dm ²
Roughening coulomb amount: 50 to 300 As / dm ²
Plating time: 1 to 60 seconds, rust prevention treatment (liquid composition)
NaOH: 40-200 g / L
NaCN: 70 to 250 g / L
CuCN: 50-200 g / L
Zn (CN) ₂ : _{2 to} 100 g / L
As ₂ O ₃ : 0.01 to 1 g / L
(Liquid temperature)
40-90 ° C
(Current condition)
Current density: 1 to 50 A / dm ²
Plating time: 1 to 20 seconds, chromate treatment K ₂ Cr ₂ O ₇ (Na ₂ Cr ₂ O ₇ or CrO ₃ ): 2 to 10 g / L
NaOH or KOH: 10-50 g / L
ZnOH or ZnSO ₄ .7H ₂ O: 0.05 to 10 g / L
pH: 7-13
Bath temperature: 20-80 ° C
Current density: 0.05 to 5 A / dm ²
Time: 5 to 30 seconds. Silane coupling treatment After applying 0.1 vol% to 0.3 vol% of 3-glycidoxypropyltrimethoxysilane aqueous solution, 0.1 to 10 in air at 100 to 200 ° C. Dry and heat for seconds.

2. Evaluation of characteristics of copper foil with carrier The characteristics of the copper foil with carrier obtained as described above were evaluated by the following method. The results are shown in Table 1.
(Surface roughness)
The surface roughness (Ra, Rt, Rz, Ssk, Sku) of the ultra-thin copper layer was measured using a non-contact type roughness measuring machine (OLYMPUS LEXT OLS 4000). Rt was measured in accordance with JIS B0601-2001, and Ssk and Sku were measured in accordance with ISO 25178 draft under the following measurement conditions.
<Measurement conditions>
Cut-off: None Reference length: 257.9 μm
Reference area: 66524 μm ²
Measurement ambient temperature: 23-25 ° C

In addition, for comparison, using a contact-type roughness measuring machine (contact roughness meter Surfcoder SE-3C manufactured by Kosaka Laboratory Ltd.), JIS B0601-1994 (Ra, Rz) and JIS B0601-2001 (Rt). In accordance with the following measurement conditions, the surface roughness (Ra, Rt, Rz) of the ultrathin copper layer was measured.
<Measurement conditions>
Cut-off: 0.25mm
Standard length: 0.8mm
Measurement ambient temperature: 23-25 ° C

(Surface area ratio)
It measured on the following measurement conditions using the non-contact-type roughness measuring machine (OLYMPUS LEXT OLS 4000). For the surface area ratio, the area and the actual area were measured, and the value of the actual area / area was defined as the surface area ratio. Here, the area refers to the measurement reference area, and the actual area refers to the surface area in the measurement reference area.
<Measurement conditions>
Cut-off: None Reference length: 257.9 μm
Reference area: 66524 μm ²
Measurement ambient temperature: 23-25 ° C

(Roughening surface volume)
It measured on the following measuring conditions using the non-contact-type roughness measuring machine (a laser microscope, Olympus LEXT OLS 4000). The volume of the roughened surface is measured as follows.
(1) The laser microscope is adjusted to a height at which the surface of the sample is focused.
(2) Adjust the brightness so that the overall illuminance is about 80% of the saturation point.
(3) The laser microscope is brought close to the sample, and the point where the screen illuminance completely disappears is set to zero.
(4) The laser microscope is moved away from the sample, and the point where the screen illuminance completely disappears is set as the upper limit height.
(5) Measure the volume of the roughened surface from zero height to the upper limit.
<Measurement conditions>
Cut-off: None Reference length: 257.9 μm
Reference area: 66524 μm ²
Measurement ambient temperature: 23-25 ° C
(migration)
Each carrier-attached copper foil was bonded to a bismuth-based resin, and then the carrier foil was peeled off. The thickness of the exposed ultrathin copper layer was set to 1.5 μm by soft etching. Then, after washing and drying, DF (manufactured by Hitachi Chemical Co., Ltd., trade name RY-3625) was laminated and applied onto the ultrathin copper layer. Exposure was carried out under the condition of 15 mJ / cm ² , and liquid jet rocking was performed for 1 minute at 38 ° C. using a developer (sodium carbonate) to form resist patterns at various pitches shown in Table 1. Next, UP was plated by 15 μm using copper sulfate plating (CUBRITE 21 manufactured by Sugawara Eugleite), and then DF was peeled with a peeling solution (sodium hydroxide). Thereafter, the ultrathin copper layer was removed by etching with a sulfuric acid-hydrogen peroxide-based etchant to form wirings having various pitches shown in Table 1.
The pitch described in the table corresponds to the total value of lines and spaces.
With respect to the obtained wiring, the presence or absence of insulation deterioration between the wiring patterns was evaluated using a migration measuring machine (MIG-9000 made by IMV) under the following measurement conditions.
<Measurement conditions>
Threshold: Initial resistance 60% down Measurement time: 1000h
Voltage: 60V
Temperature: 85 ° C
Relative humidity: 85% RH

Claims (23)

  A copper foil with a carrier comprising a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer, the ultrathin copper layer being roughened Rz on the surface of the ultrathin copper layer is 1.6 μm or less as measured by a non-contact type roughness meter, and the copper foil with a carrier has a Sku of 2.8 to 3.3 on the surface of the ultrathin copper layer.   A copper foil with a carrier comprising a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer, the ultrathin copper layer being roughened Rz on the surface of the ultrathin copper layer is 1.6 μm or less as measured by a non-contact type roughness meter, and the copper foil with a carrier whose Ssk on the surface of the ultrathin copper layer is −0.058 to 0.3 . A copper foil with a carrier comprising a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer, the ultrathin copper layer being roughened and which is at 1.35μm or less as measured in Rz of the ultrathin copper layer surface in a non-contact type roughness meter, the volume of the area 66524Myuemu ² per ultrathin copper layer surface to be measured by a laser microscope 350000Myuemu ³ The copper foil with a carrier which is the above. A copper foil with a carrier comprising a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer, the ultrathin copper layer being roughened and has, very Ra of thin copper layer surface is at 0.3μm or less as measured by non-contact type roughness meter, very Sku thin copper layer surface 2.8 to 3.3 der Ruki Yaria with copper Foil. A copper foil with a carrier comprising a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer, the ultrathin copper layer being roughened Ra of the surface of the ultrathin copper layer is 0.3 μm or less as measured by a non-contact type roughness meter, and the copper foil with a carrier whose Ssk of the surface of the ultrathin copper layer is −0.058 to 0.3 .   A copper foil with a carrier comprising a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer, the ultrathin copper layer being roughened Rt on the surface of the ultrathin copper layer is 2.3 μm or less as measured by a non-contact type roughness meter, and the copper foil with a carrier whose Sku on the surface of the ultrathin copper layer is 2.8 to 3.3.   A copper foil with a carrier comprising a copper foil carrier, a release layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the release layer, the ultrathin copper layer being roughened Rt on the surface of the ultrathin copper layer is 2.3 μm or less as measured with a non-contact type roughness meter, and the copper foil with a carrier whose Ssk on the surface of the ultrathin copper layer is −0.058 to 0.3 . The Rz on the surface of the ultrathin copper layer is 1.3 µm or less as measured with a non-contact type roughness meter, The copper foil with a carrier according to any one of claims 1 to 7 . Rz of the ultra-thin copper layer surface is 1.10 micrometers or less as measured with a non-contact type roughness meter, The copper foil with a carrier as described in any one of Claims 1-7. Electrode copper foil with carrier according to any one of claims. 1 to 9 Ra of thin copper layer surface is 0.25μm or less as measured by non-contact type roughness meter. The copper foil with a carrier according to any one of claims 1 to 9, wherein Ra on the surface of the ultrathin copper layer is 0.20 µm or less as measured by a non-contact type roughness meter. The copper foil with a carrier according to any one of claims 1 to 9, wherein Ra on the surface of the ultrathin copper layer is 0.16 µm or less as measured with a non-contact roughness meter.   The copper foil with a carrier according to any one of claims 1 to 12, wherein Rt on the surface of the ultrathin copper layer is 1.8 µm or less as measured by a non-contact type roughness meter. The copper foil with a carrier according to any one of claims 1 to 12, wherein Rt on the surface of the ultrathin copper layer is 1.5 µm or less as measured by a non-contact type roughness meter. The copper foil with a carrier according to any one of claims 1 to 12, wherein Rt on the surface of the ultrathin copper layer is 1.35 µm or less as measured by a non-contact type roughness meter. The ultrathin copper layer surface has Ssk of -0.058 to 0.3. The copper foil with a carrier according to any one of claims 1 to 15 . The copper foil with a carrier according to any one of claims 1 to 16 , wherein the ultrathin copper layer surface has a Sku of 2.8 to 3.3. The surface area ratio of the surface of the ultrathin copper layer is 1.05 to 1.5. The copper foil with a carrier according to any one of claims 1 to 17 (here, the surface area ratio refers to an area and a surface area with a laser microscope). (The real area / area value when the real area is measured. The area refers to the measurement reference area, and the real area refers to the surface area in the measurement reference area.) Electrode copper foil with carrier according to any one of claim 1 to 18 vol measured by a laser microscope area 66524Myuemu ² per thin copper layer surface is 350000Myuemu ³ or more. Copper-clad laminate produced using the copper foil with carrier according to any one of claims 1 to 19. Printed wiring board produced using the copper foil with carrier according to any one of claims 1 to 19. Printed circuit board produced using the copper foil with carrier according to any one of claims 1 to 19. A step of preparing the carrier-attached copper foil according to any one of claims 1 to 19 and an insulating substrate,
Laminating the copper foil with carrier and an insulating substrate;
After laminating the copper foil with carrier and the insulating substrate, a copper clad laminate is formed through a step of peeling the carrier of the copper foil with carrier,
Then, the manufacturing method of a printed wiring board including the process of forming a circuit by any method of a semi-additive method, a subtractive method, a partly additive method, or a modified semi-additive method.

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