JP5478855B2 - 不揮発性メモリ制御方法及び半導体装置 - Google Patents

不揮発性メモリ制御方法及び半導体装置 Download PDF

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Publication number
JP5478855B2
JP5478855B2 JP2008205414A JP2008205414A JP5478855B2 JP 5478855 B2 JP5478855 B2 JP 5478855B2 JP 2008205414 A JP2008205414 A JP 2008205414A JP 2008205414 A JP2008205414 A JP 2008205414A JP 5478855 B2 JP5478855 B2 JP 5478855B2
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Japan
Prior art keywords
page
refresh
random number
nonvolatile memory
writing
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Expired - Fee Related
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JP2008205414A
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English (en)
Japanese (ja)
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JP2010039983A5 (enExample
JP2010039983A (ja
Inventor
義則 望月
賢知 受田
茂雅 塩田
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2008205414A priority Critical patent/JP5478855B2/ja
Priority to TW098120086A priority patent/TWI534624B/zh
Priority to KR1020090058216A priority patent/KR101242293B1/ko
Priority to US12/494,817 priority patent/US8154939B2/en
Priority to CN2009101513259A priority patent/CN101645306B/zh
Publication of JP2010039983A publication Critical patent/JP2010039983A/ja
Publication of JP2010039983A5 publication Critical patent/JP2010039983A5/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/10—Program control for peripheral devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Security & Cryptography (AREA)
  • Software Systems (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Dram (AREA)
JP2008205414A 2008-08-08 2008-08-08 不揮発性メモリ制御方法及び半導体装置 Expired - Fee Related JP5478855B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008205414A JP5478855B2 (ja) 2008-08-08 2008-08-08 不揮発性メモリ制御方法及び半導体装置
TW098120086A TWI534624B (zh) 2008-08-08 2009-06-16 Nonvolatile memory control method and semiconductor device
KR1020090058216A KR101242293B1 (ko) 2008-08-08 2009-06-29 불휘발성 메모리 제어 방법 및 반도체 장치
US12/494,817 US8154939B2 (en) 2008-08-08 2009-06-30 Control method for nonvolatile memory and semiconductor device
CN2009101513259A CN101645306B (zh) 2008-08-08 2009-06-30 非易失性存储器控制方法及半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008205414A JP5478855B2 (ja) 2008-08-08 2008-08-08 不揮発性メモリ制御方法及び半導体装置

Publications (3)

Publication Number Publication Date
JP2010039983A JP2010039983A (ja) 2010-02-18
JP2010039983A5 JP2010039983A5 (enExample) 2011-09-15
JP5478855B2 true JP5478855B2 (ja) 2014-04-23

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JP2008205414A Expired - Fee Related JP5478855B2 (ja) 2008-08-08 2008-08-08 不揮発性メモリ制御方法及び半導体装置

Country Status (5)

Country Link
US (1) US8154939B2 (enExample)
JP (1) JP5478855B2 (enExample)
KR (1) KR101242293B1 (enExample)
CN (1) CN101645306B (enExample)
TW (1) TWI534624B (enExample)

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US8767450B2 (en) * 2007-08-21 2014-07-01 Samsung Electronics Co., Ltd. Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same
KR20100134375A (ko) * 2009-06-15 2010-12-23 삼성전자주식회사 리프레쉬 동작을 수행하는 메모리 시스템
TWI438778B (zh) 2010-03-25 2014-05-21 Silicon Motion Inc 用來抑制資料錯誤之方法以及相關之記憶裝置及其控制器
JP5464066B2 (ja) * 2010-06-10 2014-04-09 ソニー株式会社 通信装置、及び、通信方法
CN102637456B (zh) * 2011-02-11 2016-03-23 慧荣科技股份有限公司 内存控制器、记忆装置以及判断记忆装置的型式的方法
CN102779557B (zh) * 2011-05-13 2015-10-28 苏州雄立科技有限公司 集成memory模块的芯片数据检测校正方法及系统
EP2786224B1 (en) * 2011-11-30 2020-05-06 Intel Corporation Reducing power for 3d workloads
JP2013157047A (ja) 2012-01-27 2013-08-15 Toshiba Corp 磁気ディスク装置及び同装置におけるデータリフレッシュ方法
KR20130129786A (ko) * 2012-05-21 2013-11-29 에스케이하이닉스 주식회사 리프래쉬 방법과 이를 이용한 반도체 메모리 장치
US9236110B2 (en) * 2012-06-30 2016-01-12 Intel Corporation Row hammer refresh command
US8938573B2 (en) 2012-06-30 2015-01-20 Intel Corporation Row hammer condition monitoring
US9117544B2 (en) 2012-06-30 2015-08-25 Intel Corporation Row hammer refresh command
US9384821B2 (en) 2012-11-30 2016-07-05 Intel Corporation Row hammer monitoring based on stored row hammer threshold value
US9251885B2 (en) 2012-12-28 2016-02-02 Intel Corporation Throttling support for row-hammer counters
CN103093529B (zh) * 2013-01-10 2016-01-06 高新现代智能系统股份有限公司 动态刷新数据的方法
US9378830B2 (en) * 2013-07-16 2016-06-28 Seagate Technology Llc Partial reprogramming of solid-state non-volatile memory cells
US10534686B2 (en) * 2014-01-30 2020-01-14 Micron Technology, Inc. Apparatuses and methods for address detection
US10199115B2 (en) * 2016-06-20 2019-02-05 Qualcomm Incorporated Managing refresh for flash memory
KR102664704B1 (ko) 2016-10-24 2024-05-14 에스케이하이닉스 주식회사 메모리 시스템 및 이를 이용한 웨어-레벨링 방법
KR20180065075A (ko) 2016-12-06 2018-06-18 에스케이하이닉스 주식회사 메모리 시스템 및 이를 이용한 웨어-레벨링 방법
CN110392885B (zh) * 2017-04-07 2023-08-04 松下知识产权经营株式会社 增大了使用次数的非易失性存储器
US11615829B1 (en) * 2021-04-29 2023-03-28 Samsung Electronics Co., Ltd. Memory device performing refresh operation based on a random value and method of operating the same
CN114677974B (zh) * 2022-02-25 2023-09-26 珠海读书郎软件科技有限公司 一种用于电子墨水屏的刷新控制方法、存储介质及设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719477B2 (ja) * 1988-02-12 1995-03-06 横河電機株式会社 Ｅｅｐｒｏｍの内容保護装置
FR2700040B1 (fr) * 1992-12-31 1995-02-17 Gemplus Card Int Carte à puce avec données et programmes protégés contre le vieillissement.
US6842484B2 (en) * 2001-07-10 2005-01-11 Motorola, Inc. Method and apparatus for random forced intra-refresh in digital image and video coding
JP4256175B2 (ja) * 2003-02-04 2009-04-22 株式会社東芝 不揮発性半導体メモリ
JP2004259144A (ja) * 2003-02-27 2004-09-16 Renesas Technology Corp 半導体記憶装置
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
CN1969338B (zh) * 2004-06-23 2012-03-21 帕特兰尼拉财富有限公司 存储器
JP2006185530A (ja) 2004-12-28 2006-07-13 Renesas Technology Corp 不揮発性半導体メモリ装置
US7894282B2 (en) * 2005-11-29 2011-02-22 Samsung Electronics Co., Ltd. Dynamic random access memory device and method of determining refresh cycle thereof
JP2008090778A (ja) * 2006-10-05 2008-04-17 Matsushita Electric Ind Co Ltd 不揮発性メモリ用メモリコントローラ、不揮発性記憶装置、不揮発性記憶システム、不揮発性メモリのメモリ制御方法
KR100806341B1 (ko) * 2006-10-18 2008-03-03 삼성전자주식회사 부분 리프레쉬 동작을 수행하는 메모리 장치 및 방법
JP2008181380A (ja) * 2007-01-25 2008-08-07 Toshiba Corp メモリシステムおよびその制御方法

Also Published As

Publication number Publication date
US20100034024A1 (en) 2010-02-11
KR101242293B1 (ko) 2013-03-12
JP2010039983A (ja) 2010-02-18
KR20100019322A (ko) 2010-02-18
CN101645306B (zh) 2013-01-30
CN101645306A (zh) 2010-02-10
US8154939B2 (en) 2012-04-10
TW201011544A (en) 2010-03-16
TWI534624B (zh) 2016-05-21

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