KR101242293B1 - 불휘발성 메모리 제어 방법 및 반도체 장치 - Google Patents

불휘발성 메모리 제어 방법 및 반도체 장치 Download PDF

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Publication number
KR101242293B1
KR101242293B1 KR1020090058216A KR20090058216A KR101242293B1 KR 101242293 B1 KR101242293 B1 KR 101242293B1 KR 1020090058216 A KR1020090058216 A KR 1020090058216A KR 20090058216 A KR20090058216 A KR 20090058216A KR 101242293 B1 KR101242293 B1 KR 101242293B1
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South Korea
Prior art keywords
nonvolatile memory
refresh
access
page
target area
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English (en)
Korean (ko)
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KR20100019322A (ko
Inventor
요시노리 모찌즈끼
마사하루 우께다
시게마사 시오따
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르네사스 일렉트로닉스 가부시키가이샤
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/10—Program control for peripheral devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Security & Cryptography (AREA)
  • Software Systems (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Dram (AREA)
KR1020090058216A 2008-08-08 2009-06-29 불휘발성 메모리 제어 방법 및 반도체 장치 Expired - Fee Related KR101242293B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-205414 2008-08-08
JP2008205414A JP5478855B2 (ja) 2008-08-08 2008-08-08 不揮発性メモリ制御方法及び半導体装置

Publications (2)

Publication Number Publication Date
KR20100019322A KR20100019322A (ko) 2010-02-18
KR101242293B1 true KR101242293B1 (ko) 2013-03-12

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KR1020090058216A Expired - Fee Related KR101242293B1 (ko) 2008-08-08 2009-06-29 불휘발성 메모리 제어 방법 및 반도체 장치

Country Status (5)

Country Link
US (1) US8154939B2 (enExample)
JP (1) JP5478855B2 (enExample)
KR (1) KR101242293B1 (enExample)
CN (1) CN101645306B (enExample)
TW (1) TWI534624B (enExample)

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US8767450B2 (en) * 2007-08-21 2014-07-01 Samsung Electronics Co., Ltd. Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same
KR20100134375A (ko) * 2009-06-15 2010-12-23 삼성전자주식회사 리프레쉬 동작을 수행하는 메모리 시스템
TWI438778B (zh) 2010-03-25 2014-05-21 Silicon Motion Inc 用來抑制資料錯誤之方法以及相關之記憶裝置及其控制器
JP5464066B2 (ja) * 2010-06-10 2014-04-09 ソニー株式会社 通信装置、及び、通信方法
CN102637456B (zh) * 2011-02-11 2016-03-23 慧荣科技股份有限公司 内存控制器、记忆装置以及判断记忆装置的型式的方法
CN102779557B (zh) * 2011-05-13 2015-10-28 苏州雄立科技有限公司 集成memory模块的芯片数据检测校正方法及系统
WO2013081600A1 (en) * 2011-11-30 2013-06-06 Intel Corporation Reducing power for 3d workloads
JP2013157047A (ja) 2012-01-27 2013-08-15 Toshiba Corp 磁気ディスク装置及び同装置におけるデータリフレッシュ方法
KR20130129786A (ko) * 2012-05-21 2013-11-29 에스케이하이닉스 주식회사 리프래쉬 방법과 이를 이용한 반도체 메모리 장치
US9236110B2 (en) 2012-06-30 2016-01-12 Intel Corporation Row hammer refresh command
US9117544B2 (en) 2012-06-30 2015-08-25 Intel Corporation Row hammer refresh command
US8938573B2 (en) 2012-06-30 2015-01-20 Intel Corporation Row hammer condition monitoring
US9384821B2 (en) 2012-11-30 2016-07-05 Intel Corporation Row hammer monitoring based on stored row hammer threshold value
US9251885B2 (en) 2012-12-28 2016-02-02 Intel Corporation Throttling support for row-hammer counters
CN103093529B (zh) * 2013-01-10 2016-01-06 高新现代智能系统股份有限公司 动态刷新数据的方法
US9378830B2 (en) 2013-07-16 2016-06-28 Seagate Technology Llc Partial reprogramming of solid-state non-volatile memory cells
US10534686B2 (en) * 2014-01-30 2020-01-14 Micron Technology, Inc. Apparatuses and methods for address detection
US10199115B2 (en) * 2016-06-20 2019-02-05 Qualcomm Incorporated Managing refresh for flash memory
KR102664704B1 (ko) 2016-10-24 2024-05-14 에스케이하이닉스 주식회사 메모리 시스템 및 이를 이용한 웨어-레벨링 방법
KR20180065075A (ko) 2016-12-06 2018-06-18 에스케이하이닉스 주식회사 메모리 시스템 및 이를 이용한 웨어-레벨링 방법
WO2018186453A1 (ja) * 2017-04-07 2018-10-11 パナソニックＩｐマネジメント株式会社 使用回数を増大させた不揮発性メモリ
US11615829B1 (en) * 2021-04-29 2023-03-28 Samsung Electronics Co., Ltd. Memory device performing refresh operation based on a random value and method of operating the same
CN114677974B (zh) * 2022-02-25 2023-09-26 珠海读书郎软件科技有限公司 一种用于电子墨水屏的刷新控制方法、存储介质及设备

Citations (4)

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JPH01205792A (ja) * 1988-02-12 1989-08-18 Yokogawa Electric Corp Ｅｅｐｒｏｍの内容保護装置
JPH06231317A (ja) * 1992-12-31 1994-08-19 Gemplus Card Internatl Sa データ及びプログラムを経年変化から保護したｉｃカード
KR20070027533A (ko) * 2004-06-23 2007-03-09 산요덴키가부시키가이샤 메모리
KR100806341B1 (ko) * 2006-10-18 2008-03-03 삼성전자주식회사 부분 리프레쉬 동작을 수행하는 메모리 장치 및 방법

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* Cited by examiner, † Cited by third party
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US6842484B2 (en) * 2001-07-10 2005-01-11 Motorola, Inc. Method and apparatus for random forced intra-refresh in digital image and video coding
JP4256175B2 (ja) * 2003-02-04 2009-04-22 株式会社東芝 不揮発性半導体メモリ
JP2004259144A (ja) * 2003-02-27 2004-09-16 Renesas Technology Corp 半導体記憶装置
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
JP2006185530A (ja) 2004-12-28 2006-07-13 Renesas Technology Corp 不揮発性半導体メモリ装置
US7894282B2 (en) * 2005-11-29 2011-02-22 Samsung Electronics Co., Ltd. Dynamic random access memory device and method of determining refresh cycle thereof
JP2008090778A (ja) * 2006-10-05 2008-04-17 Matsushita Electric Ind Co Ltd 不揮発性メモリ用メモリコントローラ、不揮発性記憶装置、不揮発性記憶システム、不揮発性メモリのメモリ制御方法
JP2008181380A (ja) * 2007-01-25 2008-08-07 Toshiba Corp メモリシステムおよびその制御方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01205792A (ja) * 1988-02-12 1989-08-18 Yokogawa Electric Corp Ｅｅｐｒｏｍの内容保護装置
JPH06231317A (ja) * 1992-12-31 1994-08-19 Gemplus Card Internatl Sa データ及びプログラムを経年変化から保護したｉｃカード
KR20070027533A (ko) * 2004-06-23 2007-03-09 산요덴키가부시키가이샤 메모리
KR100806341B1 (ko) * 2006-10-18 2008-03-03 삼성전자주식회사 부분 리프레쉬 동작을 수행하는 메모리 장치 및 방법

Also Published As

Publication number Publication date
KR20100019322A (ko) 2010-02-18
US20100034024A1 (en) 2010-02-11
CN101645306B (zh) 2013-01-30
JP2010039983A (ja) 2010-02-18
US8154939B2 (en) 2012-04-10
TW201011544A (en) 2010-03-16
TWI534624B (zh) 2016-05-21
JP5478855B2 (ja) 2014-04-23
CN101645306A (zh) 2010-02-10

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