JP5478280B2 - 基板加熱装置および基板加熱方法、ならびに基板処理システム - Google Patents

基板加熱装置および基板加熱方法、ならびに基板処理システム Download PDF

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Publication number
JP5478280B2
JP5478280B2 JP2010015600A JP2010015600A JP5478280B2 JP 5478280 B2 JP5478280 B2 JP 5478280B2 JP 2010015600 A JP2010015600 A JP 2010015600A JP 2010015600 A JP2010015600 A JP 2010015600A JP 5478280 B2 JP5478280 B2 JP 5478280B2
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substrate
pressure
temperature
mounting table
container
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JP2010015600A
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Japanese (ja)
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JP2011155137A (ja
JP2011155137A5 (enExample
Inventor
智也 大久保
正樹 杉山
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2010015600A priority Critical patent/JP5478280B2/ja
Priority to EP11000591.5A priority patent/EP2355133A3/en
Priority to KR1020110007600A priority patent/KR101243397B1/ko
Priority to US13/014,111 priority patent/US20110183279A1/en
Priority to TW100102745A priority patent/TW201145394A/zh
Priority to CN2011100327429A priority patent/CN102169811A/zh
Publication of JP2011155137A publication Critical patent/JP2011155137A/ja
Publication of JP2011155137A5 publication Critical patent/JP2011155137A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2010015600A 2010-01-27 2010-01-27 基板加熱装置および基板加熱方法、ならびに基板処理システム Expired - Fee Related JP5478280B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010015600A JP5478280B2 (ja) 2010-01-27 2010-01-27 基板加熱装置および基板加熱方法、ならびに基板処理システム
EP11000591.5A EP2355133A3 (en) 2010-01-27 2011-01-25 Substrate heating apparatus, substrate heating method and substrate processing system
US13/014,111 US20110183279A1 (en) 2010-01-27 2011-01-26 Substrate heating apparatus, substrate heating method and substrate processing system
TW100102745A TW201145394A (en) 2010-01-27 2011-01-26 Substrate heating apparatus, substrate heating method, and substrate processing system
KR1020110007600A KR101243397B1 (ko) 2010-01-27 2011-01-26 기판 가열 장치 및 기판 가열 방법 및 기판 처리 시스템
CN2011100327429A CN102169811A (zh) 2010-01-27 2011-01-27 基板加热装置和基板加热方法以及基板处理系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010015600A JP5478280B2 (ja) 2010-01-27 2010-01-27 基板加熱装置および基板加熱方法、ならびに基板処理システム

Publications (3)

Publication Number Publication Date
JP2011155137A JP2011155137A (ja) 2011-08-11
JP2011155137A5 JP2011155137A5 (enExample) 2012-12-06
JP5478280B2 true JP5478280B2 (ja) 2014-04-23

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JP2010015600A Expired - Fee Related JP5478280B2 (ja) 2010-01-27 2010-01-27 基板加熱装置および基板加熱方法、ならびに基板処理システム

Country Status (6)

Country Link
US (1) US20110183279A1 (enExample)
EP (1) EP2355133A3 (enExample)
JP (1) JP5478280B2 (enExample)
KR (1) KR101243397B1 (enExample)
CN (1) CN102169811A (enExample)
TW (1) TW201145394A (enExample)

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JP6303592B2 (ja) * 2014-02-25 2018-04-04 東京エレクトロン株式会社 基板処理装置
CN105470180A (zh) * 2014-09-05 2016-04-06 北京北方微电子基地设备工艺研究中心有限责任公司 晶片升起组件及用于从晶片升起组件上取放晶片的机械手
CN106292786A (zh) * 2015-06-02 2017-01-04 英属开曼群岛商精曜有限公司 降压方法及其降压设备
JP6789040B2 (ja) * 2016-08-30 2020-11-25 東京応化工業株式会社 基板加熱装置及び基板加熱方法
US10861731B2 (en) * 2017-01-19 2020-12-08 Axcelis Technologies, Inc. Radiant heating presoak
KR102298654B1 (ko) * 2017-04-19 2021-09-07 주식회사 미코세라믹스 내구성이 개선된 세라믹 히터
CN107634017A (zh) * 2017-08-24 2018-01-26 德淮半导体有限公司 晶圆退火装置
US11955362B2 (en) 2017-09-13 2024-04-09 Applied Materials, Inc. Substrate support for reduced damage substrate backside
JP7027198B2 (ja) * 2018-03-06 2022-03-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN110323161B (zh) * 2018-03-30 2023-06-06 芝浦机械电子株式会社 有机膜形成装置以及有机膜制造方法
JP6871959B2 (ja) * 2018-03-30 2021-05-19 芝浦メカトロニクス株式会社 有機膜形成装置、および有機膜の製造方法
CN110391132B (zh) * 2018-04-16 2023-05-16 芝浦机械电子株式会社 有机膜形成装置
JP6940541B2 (ja) * 2018-04-16 2021-09-29 芝浦メカトロニクス株式会社 有機膜形成装置
JP7199211B2 (ja) * 2018-12-03 2023-01-05 東京エレクトロン株式会社 搬送検知方法及び基板処理装置

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Also Published As

Publication number Publication date
EP2355133A2 (en) 2011-08-10
JP2011155137A (ja) 2011-08-11
CN102169811A (zh) 2011-08-31
KR20110088425A (ko) 2011-08-03
KR101243397B1 (ko) 2013-03-13
EP2355133A3 (en) 2013-05-22
US20110183279A1 (en) 2011-07-28
TW201145394A (en) 2011-12-16

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