CN102169811A - 基板加热装置和基板加热方法以及基板处理系统 - Google Patents

基板加热装置和基板加热方法以及基板处理系统 Download PDF

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Publication number
CN102169811A
CN102169811A CN2011100327429A CN201110032742A CN102169811A CN 102169811 A CN102169811 A CN 102169811A CN 2011100327429 A CN2011100327429 A CN 2011100327429A CN 201110032742 A CN201110032742 A CN 201110032742A CN 102169811 A CN102169811 A CN 102169811A
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substrate
pressure
temperature
container
gas
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Chinese (zh)
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大久保智也
杉山正树
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN2011100327429A 2010-01-27 2011-01-27 基板加热装置和基板加热方法以及基板处理系统 Pending CN102169811A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-015600 2010-01-27
JP2010015600A JP5478280B2 (ja) 2010-01-27 2010-01-27 基板加熱装置および基板加熱方法、ならびに基板処理システム

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Publication Number Publication Date
CN102169811A true CN102169811A (zh) 2011-08-31

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CN2011100327429A Pending CN102169811A (zh) 2010-01-27 2011-01-27 基板加热装置和基板加热方法以及基板处理系统

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Country Link
US (1) US20110183279A1 (enExample)
EP (1) EP2355133A3 (enExample)
JP (1) JP5478280B2 (enExample)
KR (1) KR101243397B1 (enExample)
CN (1) CN102169811A (enExample)
TW (1) TW201145394A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104488358A (zh) * 2012-07-25 2015-04-01 东京毅力科创株式会社 烘焙处理系统
CN106292786A (zh) * 2015-06-02 2017-01-04 英属开曼群岛商精曜有限公司 降压方法及其降压设备
CN107799434A (zh) * 2016-08-30 2018-03-13 东京应化工业株式会社 基板加热装置以及基板加热方法
CN110233116A (zh) * 2018-03-06 2019-09-13 株式会社斯库林集团 基板处理装置
CN110323161A (zh) * 2018-03-30 2019-10-11 芝浦机械电子株式会社 有机膜形成装置以及有机膜制造方法
CN110391132A (zh) * 2018-04-16 2019-10-29 芝浦机械电子株式会社 有机膜形成装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9378994B2 (en) * 2013-03-15 2016-06-28 Applied Materials, Inc. Multi-position batch load lock apparatus and systems and methods including same
JP6303592B2 (ja) * 2014-02-25 2018-04-04 東京エレクトロン株式会社 基板処理装置
CN105470180A (zh) * 2014-09-05 2016-04-06 北京北方微电子基地设备工艺研究中心有限责任公司 晶片升起组件及用于从晶片升起组件上取放晶片的机械手
US10861731B2 (en) * 2017-01-19 2020-12-08 Axcelis Technologies, Inc. Radiant heating presoak
KR102298654B1 (ko) * 2017-04-19 2021-09-07 주식회사 미코세라믹스 내구성이 개선된 세라믹 히터
CN107634017A (zh) * 2017-08-24 2018-01-26 德淮半导体有限公司 晶圆退火装置
US11955362B2 (en) 2017-09-13 2024-04-09 Applied Materials, Inc. Substrate support for reduced damage substrate backside
JP6871959B2 (ja) * 2018-03-30 2021-05-19 芝浦メカトロニクス株式会社 有機膜形成装置、および有機膜の製造方法
JP6940541B2 (ja) * 2018-04-16 2021-09-29 芝浦メカトロニクス株式会社 有機膜形成装置
JP7199211B2 (ja) * 2018-12-03 2023-01-05 東京エレクトロン株式会社 搬送検知方法及び基板処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
CN1282099A (zh) * 1999-07-27 2001-01-31 株式会社东芝 半导体工件处理装置及方法
JP2005167107A (ja) * 2003-12-05 2005-06-23 Seiko Epson Corp 半導体製造装置及び半導体装置の製造方法
CN1779939A (zh) * 2004-10-29 2006-05-31 东京毅力科创株式会社 基板载置台、基板处理装置及基板的温度控制方法
CN101147244A (zh) * 2005-07-28 2008-03-19 东京毅力科创株式会社 基板处理方法和基板处理装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0608633B1 (en) * 1993-01-28 1999-03-03 Applied Materials, Inc. Method for multilayer CVD processing in a single chamber
JPH0742140U (ja) * 1993-12-22 1995-07-21 ミツミ電機株式会社 ウェハ保温装置
JP3052116B2 (ja) * 1994-10-26 2000-06-12 東京エレクトロン株式会社 熱処理装置
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
JP3537269B2 (ja) * 1996-05-21 2004-06-14 アネルバ株式会社 マルチチャンバースパッタリング装置
JP4386983B2 (ja) 1998-02-25 2009-12-16 キヤノンアネルバ株式会社 基板処理装置、マルチチャンバー基板処理装置及び電子デバイス製作方法
KR100319891B1 (ko) * 1999-06-29 2002-01-10 윤종용 웨이퍼용 열처리 방법
US6402509B1 (en) * 1999-09-03 2002-06-11 Tokyo Electron, Limited Substrate processing apparatus and substrate processing method
JP5116116B2 (ja) 2000-02-28 2013-01-09 楽天株式会社 仲介装置および仲介方法
JP4083512B2 (ja) * 2002-08-30 2008-04-30 東京エレクトロン株式会社 基板処理装置
US20040226513A1 (en) * 2003-05-12 2004-11-18 Applied Materials, Inc. Chamber for uniform heating of large area substrates
JP4540953B2 (ja) * 2003-08-28 2010-09-08 キヤノンアネルバ株式会社 基板加熱装置及びマルチチャンバー基板処理装置
DE202004012733U1 (de) * 2004-08-13 2004-10-21 Böllhoff Verbindungstechnik GmbH Einstelleinheit zum Einstellen des Abstandes zwischen zwei Bauteilen
CN101065616A (zh) * 2004-10-14 2007-10-31 迅捷公司 用于晶片温度控制的方法和系统
JP4976002B2 (ja) * 2005-11-08 2012-07-18 東京エレクトロン株式会社 基板処理装置，基板処理方法及び記録媒体
JP2007146252A (ja) * 2005-11-29 2007-06-14 Tokyo Electron Ltd 熱処理方法、熱処理装置及び記憶媒体
US7619179B2 (en) * 2006-01-20 2009-11-17 Tokyo Electron Limited Electrode for generating plasma and plasma processing apparatus using same
JP2008306176A (ja) * 2007-05-08 2008-12-18 Tokyo Electron Ltd 化合物半導体の熱処理方法及びその装置
TWI459851B (zh) * 2007-09-10 2014-11-01 Ngk Insulators Ltd heating equipment
JP5084420B2 (ja) * 2007-09-21 2012-11-28 東京エレクトロン株式会社 ロードロック装置および真空処理システム
JP4616873B2 (ja) * 2007-09-28 2011-01-19 東京エレクトロン株式会社 半導体製造装置、基板保持方法及びプログラム
JP5286282B2 (ja) * 2007-12-27 2013-09-11 シャープ株式会社 プラズマ処理装置、プラズマ処理装置用加熱及び冷却装置
JP5228495B2 (ja) * 2008-01-11 2013-07-03 富士通セミコンダクター株式会社 半導体装置の製造方法
KR101241570B1 (ko) * 2008-11-21 2013-03-11 시바우라 메카트로닉스 가부시끼가이샤 기판 처리 방법 및 기판 처리 장치
JP2011035199A (ja) * 2009-08-03 2011-02-17 Tokyo Electron Ltd 基板載置機構およびそれを用いた基板処理装置
US8205843B2 (en) * 2009-09-02 2012-06-26 Electrolux Home Products, Inc. Rollerball leveling leg

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
CN1282099A (zh) * 1999-07-27 2001-01-31 株式会社东芝 半导体工件处理装置及方法
JP2005167107A (ja) * 2003-12-05 2005-06-23 Seiko Epson Corp 半導体製造装置及び半導体装置の製造方法
CN1779939A (zh) * 2004-10-29 2006-05-31 东京毅力科创株式会社 基板载置台、基板处理装置及基板的温度控制方法
CN101147244A (zh) * 2005-07-28 2008-03-19 东京毅力科创株式会社 基板处理方法和基板处理装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104488358A (zh) * 2012-07-25 2015-04-01 东京毅力科创株式会社 烘焙处理系统
CN104488358B (zh) * 2012-07-25 2016-08-17 东京毅力科创株式会社 烘焙处理系统及有机el元件的有机功能膜的层叠体的制造方法
CN106292786A (zh) * 2015-06-02 2017-01-04 英属开曼群岛商精曜有限公司 降压方法及其降压设备
CN107799434A (zh) * 2016-08-30 2018-03-13 东京应化工业株式会社 基板加热装置以及基板加热方法
CN107799434B (zh) * 2016-08-30 2022-10-28 东京应化工业株式会社 基板加热装置以及基板加热方法
CN110233116A (zh) * 2018-03-06 2019-09-13 株式会社斯库林集团 基板处理装置
CN110233116B (zh) * 2018-03-06 2023-07-04 株式会社斯库林集团 基板处理装置
CN110323161A (zh) * 2018-03-30 2019-10-11 芝浦机械电子株式会社 有机膜形成装置以及有机膜制造方法
CN110323161B (zh) * 2018-03-30 2023-06-06 芝浦机械电子株式会社 有机膜形成装置以及有机膜制造方法
CN110391132A (zh) * 2018-04-16 2019-10-29 芝浦机械电子株式会社 有机膜形成装置
CN110391132B (zh) * 2018-04-16 2023-05-16 芝浦机械电子株式会社 有机膜形成装置

Also Published As

Publication number Publication date
JP2011155137A (ja) 2011-08-11
EP2355133A3 (en) 2013-05-22
JP5478280B2 (ja) 2014-04-23
KR20110088425A (ko) 2011-08-03
US20110183279A1 (en) 2011-07-28
KR101243397B1 (ko) 2013-03-13
TW201145394A (en) 2011-12-16
EP2355133A2 (en) 2011-08-10

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Application publication date: 20110831