TW201145394A - Substrate heating apparatus, substrate heating method, and substrate processing system - Google Patents

Substrate heating apparatus, substrate heating method, and substrate processing system Download PDF

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Publication number
TW201145394A
TW201145394A TW100102745A TW100102745A TW201145394A TW 201145394 A TW201145394 A TW 201145394A TW 100102745 A TW100102745 A TW 100102745A TW 100102745 A TW100102745 A TW 100102745A TW 201145394 A TW201145394 A TW 201145394A
Authority
TW
Taiwan
Prior art keywords
substrate
pressure
container
temperature
mounting table
Prior art date
Application number
TW100102745A
Other languages
English (en)
Chinese (zh)
Inventor
Tomoya Okubo
Masaki Sugiyama
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201145394A publication Critical patent/TW201145394A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW100102745A 2010-01-27 2011-01-26 Substrate heating apparatus, substrate heating method, and substrate processing system TW201145394A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010015600A JP5478280B2 (ja) 2010-01-27 2010-01-27 基板加熱装置および基板加熱方法、ならびに基板処理システム

Publications (1)

Publication Number Publication Date
TW201145394A true TW201145394A (en) 2011-12-16

Family

ID=43770548

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100102745A TW201145394A (en) 2010-01-27 2011-01-26 Substrate heating apparatus, substrate heating method, and substrate processing system

Country Status (6)

Country Link
US (1) US20110183279A1 (enExample)
EP (1) EP2355133A3 (enExample)
JP (1) JP5478280B2 (enExample)
KR (1) KR101243397B1 (enExample)
CN (1) CN102169811A (enExample)
TW (1) TW201145394A (enExample)

Cited By (2)

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TWI600790B (zh) * 2014-02-25 2017-10-01 東京威力科創股份有限公司 利用旋轉台之基板處理裝置
TWI799409B (zh) * 2017-04-19 2023-04-21 南韓商美科陶瓷科技有限公司 改善了耐久性的陶瓷加熱器及其陶瓷板

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WO2014143846A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc Multi-position batch load lock apparatus and systems and methods including same
CN105470180A (zh) * 2014-09-05 2016-04-06 北京北方微电子基地设备工艺研究中心有限责任公司 晶片升起组件及用于从晶片升起组件上取放晶片的机械手
CN106292786A (zh) * 2015-06-02 2017-01-04 英属开曼群岛商精曜有限公司 降压方法及其降压设备
JP6789040B2 (ja) * 2016-08-30 2020-11-25 東京応化工業株式会社 基板加熱装置及び基板加熱方法
US10861731B2 (en) * 2017-01-19 2020-12-08 Axcelis Technologies, Inc. Radiant heating presoak
CN107634017A (zh) * 2017-08-24 2018-01-26 德淮半导体有限公司 晶圆退火装置
US11955362B2 (en) 2017-09-13 2024-04-09 Applied Materials, Inc. Substrate support for reduced damage substrate backside
JP7027198B2 (ja) * 2018-03-06 2022-03-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN110323161B (zh) * 2018-03-30 2023-06-06 芝浦机械电子株式会社 有机膜形成装置以及有机膜制造方法
JP6871959B2 (ja) * 2018-03-30 2021-05-19 芝浦メカトロニクス株式会社 有機膜形成装置、および有機膜の製造方法
CN110391132B (zh) * 2018-04-16 2023-05-16 芝浦机械电子株式会社 有机膜形成装置
JP6940541B2 (ja) * 2018-04-16 2021-09-29 芝浦メカトロニクス株式会社 有機膜形成装置
JP7199211B2 (ja) * 2018-12-03 2023-01-05 東京エレクトロン株式会社 搬送検知方法及び基板処理装置

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US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
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JP4386983B2 (ja) 1998-02-25 2009-12-16 キヤノンアネルバ株式会社 基板処理装置、マルチチャンバー基板処理装置及び電子デバイス製作方法
KR100319891B1 (ko) * 1999-06-29 2002-01-10 윤종용 웨이퍼용 열처리 방법
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI600790B (zh) * 2014-02-25 2017-10-01 東京威力科創股份有限公司 利用旋轉台之基板處理裝置
TWI799409B (zh) * 2017-04-19 2023-04-21 南韓商美科陶瓷科技有限公司 改善了耐久性的陶瓷加熱器及其陶瓷板

Also Published As

Publication number Publication date
EP2355133A2 (en) 2011-08-10
JP2011155137A (ja) 2011-08-11
JP5478280B2 (ja) 2014-04-23
CN102169811A (zh) 2011-08-31
KR20110088425A (ko) 2011-08-03
KR101243397B1 (ko) 2013-03-13
EP2355133A3 (en) 2013-05-22
US20110183279A1 (en) 2011-07-28

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