JP5477687B2 - スイッチング素子、スイッチング素子の動作方法、スイッチング素子の製造方法、書き換え可能な論理集積回路およびメモリ素子 - Google Patents
スイッチング素子、スイッチング素子の動作方法、スイッチング素子の製造方法、書き換え可能な論理集積回路およびメモリ素子 Download PDFInfo
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- JP5477687B2 JP5477687B2 JP2009089632A JP2009089632A JP5477687B2 JP 5477687 B2 JP5477687 B2 JP 5477687B2 JP 2009089632 A JP2009089632 A JP 2009089632A JP 2009089632 A JP2009089632 A JP 2009089632A JP 5477687 B2 JP5477687 B2 JP 5477687B2
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
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JP2010245132A JP2010245132A (ja) | 2010-10-28 |
JP2010245132A5 JP2010245132A5 (enrdf_load_stackoverflow) | 2012-05-10 |
JP5477687B2 true JP5477687B2 (ja) | 2014-04-23 |
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JP5270046B2 (ja) * | 2011-01-20 | 2013-08-21 | パナソニック株式会社 | 抵抗変化素子およびその製造方法 |
JP5547111B2 (ja) * | 2011-02-15 | 2014-07-09 | 株式会社東芝 | 不揮発性抵抗変化素子および不揮発性抵抗変化素子の製造方法 |
JP5895932B2 (ja) * | 2011-05-10 | 2016-03-30 | 日本電気株式会社 | 抵抗変化素子、それを含む半導体装置およびそれらの製造方法 |
WO2013190988A1 (ja) * | 2012-06-22 | 2013-12-27 | 日本電気株式会社 | スイッチング素子およびスイッチング素子の製造方法 |
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TWI233204B (en) * | 2002-07-26 | 2005-05-21 | Infineon Technologies Ag | Nonvolatile memory element and associated production methods and memory element arrangements |
WO2006070773A1 (ja) * | 2004-12-28 | 2006-07-06 | Nec Corporation | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 |
JP5054936B2 (ja) * | 2005-06-22 | 2012-10-24 | パナソニック株式会社 | 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法 |
JP4792009B2 (ja) * | 2007-06-12 | 2011-10-12 | 株式会社東芝 | 情報記録再生装置 |
JP2009043873A (ja) * | 2007-08-08 | 2009-02-26 | Sony Corp | 記憶素子および記憶装置 |
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