JP5475947B2 - 紙及び半導体装置 - Google Patents

紙及び半導体装置 Download PDF

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Publication number
JP5475947B2
JP5475947B2 JP2007306798A JP2007306798A JP5475947B2 JP 5475947 B2 JP5475947 B2 JP 5475947B2 JP 2007306798 A JP2007306798 A JP 2007306798A JP 2007306798 A JP2007306798 A JP 2007306798A JP 5475947 B2 JP5475947 B2 JP 5475947B2
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JP
Japan
Prior art keywords
layer
insulating layer
memory
electrode
organic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007306798A
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English (en)
Japanese (ja)
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JP2008166739A (ja
JP2008166739A5 (enExample
Inventor
亮二 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007306798A priority Critical patent/JP5475947B2/ja
Publication of JP2008166739A publication Critical patent/JP2008166739A/ja
Publication of JP2008166739A5 publication Critical patent/JP2008166739A5/ja
Application granted granted Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2007306798A 2006-11-28 2007-11-28 紙及び半導体装置 Expired - Fee Related JP5475947B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007306798A JP5475947B2 (ja) 2006-11-28 2007-11-28 紙及び半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006320482 2006-11-28
JP2006320482 2006-11-28
JP2007306798A JP5475947B2 (ja) 2006-11-28 2007-11-28 紙及び半導体装置

Publications (3)

Publication Number Publication Date
JP2008166739A JP2008166739A (ja) 2008-07-17
JP2008166739A5 JP2008166739A5 (enExample) 2010-10-21
JP5475947B2 true JP5475947B2 (ja) 2014-04-16

Family

ID=39462627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007306798A Expired - Fee Related JP5475947B2 (ja) 2006-11-28 2007-11-28 紙及び半導体装置

Country Status (3)

Country Link
US (1) US7988057B2 (enExample)
JP (1) JP5475947B2 (enExample)
KR (1) KR101427083B1 (enExample)

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GB0701823D0 (en) * 2007-02-01 2007-03-14 Delphi Tech Inc A casing for an electrical component
JP5121432B2 (ja) * 2007-12-11 2013-01-16 キヤノン株式会社 液晶表示装置及びその製造方法並びに液晶プロジェクション装置
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
KR101041146B1 (ko) 2009-09-02 2011-06-13 삼성모바일디스플레이주식회사 표시 장치
KR101127595B1 (ko) 2010-05-04 2012-03-23 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조방법
TWI429090B (zh) * 2010-05-21 2014-03-01 國立成功大學 Crystal element and manufacturing method thereof
JP5718123B2 (ja) * 2011-03-30 2015-05-13 富士通株式会社 Ｒｆｉｄタグ
US9947688B2 (en) 2011-06-22 2018-04-17 Psemi Corporation Integrated circuits with components on both sides of a selected substrate and methods of fabrication
US20130154049A1 (en) * 2011-06-22 2013-06-20 George IMTHURN Integrated Circuits on Ceramic Wafers Using Layer Transfer Technology
CN102709257B (zh) * 2012-05-10 2015-08-19 三星半导体(中国)研究开发有限公司 半导体塑封料及其制造方法和半导体封装件
US8941128B2 (en) * 2012-11-21 2015-01-27 Intel Corporation Passivation layer for flexible display
JP6008763B2 (ja) * 2013-03-13 2016-10-19 富士フイルム株式会社 有機半導体膜の形成方法
WO2014166036A1 (zh) * 2013-04-07 2014-10-16 Liu Tajo 有机半导体装置
US9728298B2 (en) 2015-06-26 2017-08-08 Daikin America, Inc. Radiation crosslinked fluoropolymer compositions containing low level of extractable fluorides
CN108780253A (zh) * 2016-03-31 2018-11-09 陶氏环球技术有限责任公司 用钝化薄膜晶体管组件
US11479744B2 (en) * 2018-03-02 2022-10-25 Mitsubishi Gas Chemical Company, Inc. Composition having suppressed alumina damage and production method for semiconductor substrate using same
JP2023115730A (ja) * 2022-02-08 2023-08-21 タカノ株式会社 無線タグ、検査システム及び方法

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JPH05217702A (ja) * 1992-01-31 1993-08-27 Hitachi Chem Co Ltd 電子部品封止用エポキシ樹脂成形材料
JP3471514B2 (ja) 1996-02-01 2003-12-02 水澤化学工業株式会社 半導体封止用樹脂組成物及びそれに用いる吸湿性充填剤
JPH09220891A (ja) * 1996-02-19 1997-08-26 Mitsubishi Electric Corp Ｉｃカード
US5853905A (en) * 1997-09-08 1998-12-29 Motorola, Inc. Efficient single layer electroluminescent device
JPH11307261A (ja) 1998-04-16 1999-11-05 Tdk Corp 有機ｅｌ素子
JP2000030870A (ja) 1998-07-14 2000-01-28 Tdk Corp 有機ｅｌ素子
TW516244B (en) * 1999-09-17 2003-01-01 Semiconductor Energy Lab EL display device and method for manufacturing the same
JP3942770B2 (ja) * 1999-09-22 2007-07-11 株式会社半導体エネルギー研究所 Ｅｌ表示装置及び電子装置
JP2001345431A (ja) 2000-05-31 2001-12-14 Japan Science & Technology Corp 有機強誘電体薄膜及び半導体デバイス
JP2002026277A (ja) 2000-06-30 2002-01-25 Seiko Epson Corp メモリデバイス及びその駆動方法
WO2002037500A1 (en) * 2000-10-31 2002-05-10 The Regents Of The University Of California Organic bistable device and organic memory cells
BR0117103A (pt) 2001-08-13 2004-08-10 Advanced Micro Devices Inc Célula de memória
JP3940014B2 (ja) * 2002-03-29 2007-07-04 富士通株式会社 半導体集積回路、無線タグ、および非接触型ｉｃカード
JP2004047791A (ja) 2002-07-12 2004-02-12 Pioneer Electronic Corp 有機薄膜スイッチングメモリ素子及びメモリ装置
JP2004128471A (ja) 2002-08-07 2004-04-22 Canon Inc 不揮発メモリ装置
JP2004095737A (ja) * 2002-08-30 2004-03-25 Kyocera Corp 光半導体素子収納用パッケージ
JP4254228B2 (ja) 2002-12-20 2009-04-15 富士電機ホールディングス株式会社 スイッチング素子及びその製造方法
CN1742343B (zh) * 2003-01-29 2011-10-19 波尔伊克两合公司 有机存储单元及其驱动电路
US20040214008A1 (en) * 2003-04-25 2004-10-28 Dobrusky Scott R. Flexible magnetic damping laminate with thermosetting adhesive layer
JP4893908B2 (ja) 2004-03-25 2012-03-07 独立行政法人産業技術総合研究所 情報記録素子
CN100468740C (zh) 2004-04-02 2009-03-11 株式会社半导体能源研究所 半导体器件及其驱动方法
JP2005332977A (ja) * 2004-05-20 2005-12-02 Fuji Electric Holdings Co Ltd スイッチング素子
CN101676931B (zh) 2004-10-18 2012-06-27 株式会社半导体能源研究所 半导体器件以及防止用户伪造物体的方法
CN101044624A (zh) 2004-10-22 2007-09-26 株式会社半导体能源研究所 半导体器件
US7935958B2 (en) 2004-10-22 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4541246B2 (ja) * 2004-12-24 2010-09-08 トッパン・フォームズ株式会社 非接触ｉｃモジュール
JP4884784B2 (ja) * 2005-01-28 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体装置
JP5046525B2 (ja) * 2005-02-28 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
KR101322747B1 (ko) 2005-03-25 2013-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 전자기기
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same

Also Published As

Publication number Publication date
KR20080048423A (ko) 2008-06-02
US20080121725A1 (en) 2008-05-29
KR101427083B1 (ko) 2014-08-07
US7988057B2 (en) 2011-08-02
JP2008166739A (ja) 2008-07-17

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