JP2008166739A5 - - Google Patents

Download PDF

Info

Publication number
JP2008166739A5
JP2008166739A5 JP2007306798A JP2007306798A JP2008166739A5 JP 2008166739 A5 JP2008166739 A5 JP 2008166739A5 JP 2007306798 A JP2007306798 A JP 2007306798A JP 2007306798 A JP2007306798 A JP 2007306798A JP 2008166739 A5 JP2008166739 A5 JP 2008166739A5
Authority
JP
Japan
Prior art keywords
layer
paper
electrode layer
hygroscopic material
sealing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007306798A
Other languages
English (en)
Japanese (ja)
Other versions
JP5475947B2 (ja
JP2008166739A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007306798A priority Critical patent/JP5475947B2/ja
Priority claimed from JP2007306798A external-priority patent/JP5475947B2/ja
Publication of JP2008166739A publication Critical patent/JP2008166739A/ja
Publication of JP2008166739A5 publication Critical patent/JP2008166739A5/ja
Application granted granted Critical
Publication of JP5475947B2 publication Critical patent/JP5475947B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007306798A 2006-11-28 2007-11-28 紙及び半導体装置 Expired - Fee Related JP5475947B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007306798A JP5475947B2 (ja) 2006-11-28 2007-11-28 紙及び半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006320482 2006-11-28
JP2006320482 2006-11-28
JP2007306798A JP5475947B2 (ja) 2006-11-28 2007-11-28 紙及び半導体装置

Publications (3)

Publication Number Publication Date
JP2008166739A JP2008166739A (ja) 2008-07-17
JP2008166739A5 true JP2008166739A5 (enExample) 2010-10-21
JP5475947B2 JP5475947B2 (ja) 2014-04-16

Family

ID=39462627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007306798A Expired - Fee Related JP5475947B2 (ja) 2006-11-28 2007-11-28 紙及び半導体装置

Country Status (3)

Country Link
US (1) US7988057B2 (enExample)
JP (1) JP5475947B2 (enExample)
KR (1) KR101427083B1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0701823D0 (en) * 2007-02-01 2007-03-14 Delphi Tech Inc A casing for an electrical component
JP5121432B2 (ja) * 2007-12-11 2013-01-16 キヤノン株式会社 液晶表示装置及びその製造方法並びに液晶プロジェクション装置
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
KR101041146B1 (ko) 2009-09-02 2011-06-13 삼성모바일디스플레이주식회사 표시 장치
KR101127595B1 (ko) 2010-05-04 2012-03-23 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조방법
TWI429090B (zh) * 2010-05-21 2014-03-01 國立成功大學 Crystal element and manufacturing method thereof
JP5718123B2 (ja) * 2011-03-30 2015-05-13 富士通株式会社 Ｒｆｉｄタグ
US20130154049A1 (en) * 2011-06-22 2013-06-20 George IMTHURN Integrated Circuits on Ceramic Wafers Using Layer Transfer Technology
US9947688B2 (en) 2011-06-22 2018-04-17 Psemi Corporation Integrated circuits with components on both sides of a selected substrate and methods of fabrication
CN102709257B (zh) * 2012-05-10 2015-08-19 三星半导体(中国)研究开发有限公司 半导体塑封料及其制造方法和半导体封装件
US8941128B2 (en) * 2012-11-21 2015-01-27 Intel Corporation Passivation layer for flexible display
JP6008763B2 (ja) * 2013-03-13 2016-10-19 富士フイルム株式会社 有機半導体膜の形成方法
WO2014166036A1 (zh) * 2013-04-07 2014-10-16 Liu Tajo 有机半导体装置
US9728298B2 (en) 2015-06-26 2017-08-08 Daikin America, Inc. Radiation crosslinked fluoropolymer compositions containing low level of extractable fluorides
CN108780253A (zh) * 2016-03-31 2018-11-09 陶氏环球技术有限责任公司 用钝化薄膜晶体管组件
JP7294315B2 (ja) * 2018-03-02 2023-06-20 三菱瓦斯化学株式会社 アルミナのダメージを抑制した組成物及びこれを用いた半導体基板の製造方法
JP2023115730A (ja) * 2022-02-08 2023-08-21 タカノ株式会社 無線タグ、検査システム及び方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05217702A (ja) * 1992-01-31 1993-08-27 Hitachi Chem Co Ltd 電子部品封止用エポキシ樹脂成形材料
JP3471514B2 (ja) 1996-02-01 2003-12-02 水澤化学工業株式会社 半導体封止用樹脂組成物及びそれに用いる吸湿性充填剤
JPH09220891A (ja) * 1996-02-19 1997-08-26 Mitsubishi Electric Corp Ｉｃカード
US5853905A (en) 1997-09-08 1998-12-29 Motorola, Inc. Efficient single layer electroluminescent device
JPH11307261A (ja) 1998-04-16 1999-11-05 Tdk Corp 有機ｅｌ素子
JP2000030870A (ja) 1998-07-14 2000-01-28 Tdk Corp 有機ｅｌ素子
TW516244B (en) * 1999-09-17 2003-01-01 Semiconductor Energy Lab EL display device and method for manufacturing the same
JP3942770B2 (ja) 1999-09-22 2007-07-11 株式会社半導体エネルギー研究所 Ｅｌ表示装置及び電子装置
JP2001345431A (ja) 2000-05-31 2001-12-14 Japan Science & Technology Corp 有機強誘電体薄膜及び半導体デバイス
JP2002026277A (ja) 2000-06-30 2002-01-25 Seiko Epson Corp メモリデバイス及びその駆動方法
US6950331B2 (en) 2000-10-31 2005-09-27 The Regents Of The University Of California Organic bistable device and organic memory cells
WO2003017282A1 (en) 2001-08-13 2003-02-27 Advanced Micro Devices, Inc. Memory cell
JP3940014B2 (ja) 2002-03-29 2007-07-04 富士通株式会社 半導体集積回路、無線タグ、および非接触型ｉｃカード
JP2004047791A (ja) 2002-07-12 2004-02-12 Pioneer Electronic Corp 有機薄膜スイッチングメモリ素子及びメモリ装置
JP2004128471A (ja) 2002-08-07 2004-04-22 Canon Inc 不揮発メモリ装置
JP2004095737A (ja) * 2002-08-30 2004-03-25 Kyocera Corp 光半導体素子収納用パッケージ
JP4254228B2 (ja) 2002-12-20 2009-04-15 富士電機ホールディングス株式会社 スイッチング素子及びその製造方法
MXPA05007878A (es) 2003-01-29 2006-02-08 Polylc Gmbh & Co Kg Unidad de memoria organica y circuito impulsor para la misma.
US20040214008A1 (en) * 2003-04-25 2004-10-28 Dobrusky Scott R. Flexible magnetic damping laminate with thermosetting adhesive layer
JP4893908B2 (ja) 2004-03-25 2012-03-07 独立行政法人産業技術総合研究所 情報記録素子
US7630233B2 (en) 2004-04-02 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
JP2005332977A (ja) * 2004-05-20 2005-12-02 Fuji Electric Holdings Co Ltd スイッチング素子
KR101201698B1 (ko) 2004-10-18 2012-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US7781758B2 (en) 2004-10-22 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2006043687A1 (en) 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4541246B2 (ja) * 2004-12-24 2010-09-08 トッパン・フォームズ株式会社 非接触ｉｃモジュール
JP4884784B2 (ja) * 2005-01-28 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体装置
JP5046525B2 (ja) * 2005-02-28 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
CN100546035C (zh) 2005-03-25 2009-09-30 株式会社半导体能源研究所 存储元件和半导体装置
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same

Similar Documents

Publication Publication Date Title
JP2009158742A5 (enExample)
US9769964B2 (en) Heat discharging sheet and display device including the same
US9070692B2 (en) Shields for magnetic memory chip packages
KR101871317B1 (ko) 전자 장치를 캡슐화하기 위한 방법
JP2008004893A5 (enExample)
EP2477215A3 (en) Resin composition, embedding material, insulating layer and semiconductor device
US9643155B2 (en) Absorbent laminate provided with absorbent film, electronic device containing same, and method for producing same
JP2010056546A5 (ja) 半導体装置
JP2009123725A5 (enExample)
JP2009267366A5 (enExample)
KR101795711B1 (ko) 배터리 셀 파우치 필름 및 그 제조방법
JP2007529112A5 (enExample)
CN109004086A (zh) 半导体封装
JP2006066813A5 (enExample)
CN111919511A (zh) 有机电子装置用密封构件
JP2013093182A5 (enExample)
CN107768331B (zh) 使用石墨烯量子点的散热结构以及制造该散热结构的方法
JP2004200692A5 (enExample)
KR20180120414A (ko) 그래핀 및 무기 나노 입자의 층상 구조를 이용한 방열 필름 및 이의 제조 방법
JP2007305848A5 (enExample)
TW201138043A (en) Circuit board structure, packaging structure and method for making the same
JP2007129110A5 (enExample)
KR102085696B1 (ko) 커버 시트 및 이를 포함하는 유기전자장치
JP2006309738A5 (enExample)
US20180205005A1 (en) Structures and methods for shielding magnetically sensitive components