JP2009123725A5 - - Google Patents

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Publication number
JP2009123725A5
JP2009123725A5 JP2007292723A JP2007292723A JP2009123725A5 JP 2009123725 A5 JP2009123725 A5 JP 2009123725A5 JP 2007292723 A JP2007292723 A JP 2007292723A JP 2007292723 A JP2007292723 A JP 2007292723A JP 2009123725 A5 JP2009123725 A5 JP 2009123725A5
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JP
Japan
Prior art keywords
memory device
semiconductor memory
nonvolatile
volatile
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007292723A
Other languages
English (en)
Japanese (ja)
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JP2009123725A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007292723A priority Critical patent/JP2009123725A/ja
Priority claimed from JP2007292723A external-priority patent/JP2009123725A/ja
Priority to TW097140778A priority patent/TW200939469A/zh
Priority to US12/268,118 priority patent/US20090140233A1/en
Priority to KR1020080111556A priority patent/KR20090049028A/ko
Priority to CNA2008101740296A priority patent/CN101436606A/zh
Publication of JP2009123725A publication Critical patent/JP2009123725A/ja
Publication of JP2009123725A5 publication Critical patent/JP2009123725A5/ja
Withdrawn legal-status Critical Current

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JP2007292723A 2007-11-12 2007-11-12 不揮発性半導体記憶装置 Withdrawn JP2009123725A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007292723A JP2009123725A (ja) 2007-11-12 2007-11-12 不揮発性半導体記憶装置
TW097140778A TW200939469A (en) 2007-11-12 2008-10-24 Nonvolatile semiconductor memory device
US12/268,118 US20090140233A1 (en) 2007-11-12 2008-11-10 Nonvolatile semiconductor memory device
KR1020080111556A KR20090049028A (ko) 2007-11-12 2008-11-11 불휘발성 반도체 기억 장치
CNA2008101740296A CN101436606A (zh) 2007-11-12 2008-11-12 非易失性半导体存储器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007292723A JP2009123725A (ja) 2007-11-12 2007-11-12 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2009123725A JP2009123725A (ja) 2009-06-04
JP2009123725A5 true JP2009123725A5 (enExample) 2010-09-09

Family

ID=40674792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007292723A Withdrawn JP2009123725A (ja) 2007-11-12 2007-11-12 不揮発性半導体記憶装置

Country Status (5)

Country Link
US (1) US20090140233A1 (enExample)
JP (1) JP2009123725A (enExample)
KR (1) KR20090049028A (enExample)
CN (1) CN101436606A (enExample)
TW (1) TW200939469A (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283486A (ja) * 2008-05-19 2009-12-03 Toshiba Corp 不揮発性記憶装置及びその製造方法
JP5550239B2 (ja) * 2009-01-26 2014-07-16 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
JP5439147B2 (ja) 2009-12-04 2014-03-12 株式会社東芝 抵抗変化メモリ
JP5420436B2 (ja) * 2010-01-15 2014-02-19 株式会社日立製作所 不揮発性記憶装置およびその製造方法
US8017433B2 (en) * 2010-02-09 2011-09-13 International Business Machines Corporation Post deposition method for regrowth of crystalline phase change material
JP5161911B2 (ja) 2010-03-25 2013-03-13 株式会社東芝 抵抗変化メモリ
JP5641779B2 (ja) 2010-05-18 2014-12-17 株式会社日立製作所 不揮発性記憶装置およびその製造方法
JP5566217B2 (ja) * 2010-07-30 2014-08-06 株式会社東芝 不揮発性記憶装置
JP5674548B2 (ja) * 2011-04-28 2015-02-25 株式会社日立製作所 半導体記憶装置
CN103137646A (zh) * 2013-03-15 2013-06-05 中国科学院微电子研究所 用于双极型阻变存储器交叉阵列集成方式的选通器件单元
KR102001466B1 (ko) * 2013-09-25 2019-07-18 에스케이하이닉스 주식회사 전자 장치
US8981334B1 (en) * 2013-11-01 2015-03-17 Micron Technology, Inc. Memory cells having regions containing one or both of carbon and boron
US9876054B1 (en) 2016-07-27 2018-01-23 Western Digital Technologies, Inc. Thermal management of selector
US10008665B1 (en) * 2016-12-27 2018-06-26 Intel Corporation Doping of selector and storage materials of a memory cell
US10090067B1 (en) * 2017-05-30 2018-10-02 Seagate Technology Llc Data storage device with rewritable in-place memory
KR102638628B1 (ko) 2017-10-20 2024-02-22 삼성전자주식회사 가변 저항 메모리 소자 및 이의 제조 방법
CN110335942A (zh) * 2019-07-08 2019-10-15 中国科学院上海微系统与信息技术研究所 一种相变存储器及其制作方法
KR102722150B1 (ko) * 2019-07-23 2024-10-28 삼성전자주식회사 가변 저항 메모리 장치 및 그 제조 방법
KR20220033596A (ko) * 2020-09-08 2022-03-17 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 표시 장치 및 이의 제조 방법
CN115443537A (zh) * 2020-11-27 2022-12-06 北京时代全芯存储技术股份有限公司 相变存储器的制备方法和相变存储器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4491870B2 (ja) * 1999-10-27 2010-06-30 ソニー株式会社 不揮発性メモリの駆動方法
EP1609154B1 (en) * 2003-03-18 2013-12-25 Kabushiki Kaisha Toshiba Phase change memory device

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