JP2009123725A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP2009123725A
JP2009123725A JP2007292723A JP2007292723A JP2009123725A JP 2009123725 A JP2009123725 A JP 2009123725A JP 2007292723 A JP2007292723 A JP 2007292723A JP 2007292723 A JP2007292723 A JP 2007292723A JP 2009123725 A JP2009123725 A JP 2009123725A
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JP
Japan
Prior art keywords
layer
recording material
nonvolatile
metal wiring
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007292723A
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English (en)
Japanese (ja)
Other versions
JP2009123725A5 (enExample
Inventor
Katsuji Kinoshita
勝治 木下
Motoyasu Terao
元康 寺尾
Hideyuki Matsuoka
秀行 松岡
Yoshitaka Sasako
佳孝 笹子
Yoshinobu Kimura
嘉伸 木村
Akio Shima
明生 島
Mitsuharu Tai
光春 田井
Norikatsu Takaura
則克 高浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2007292723A priority Critical patent/JP2009123725A/ja
Priority to TW097140778A priority patent/TW200939469A/zh
Priority to US12/268,118 priority patent/US20090140233A1/en
Priority to KR1020080111556A priority patent/KR20090049028A/ko
Priority to CNA2008101740296A priority patent/CN101436606A/zh
Publication of JP2009123725A publication Critical patent/JP2009123725A/ja
Publication of JP2009123725A5 publication Critical patent/JP2009123725A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
JP2007292723A 2007-11-12 2007-11-12 不揮発性半導体記憶装置 Withdrawn JP2009123725A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007292723A JP2009123725A (ja) 2007-11-12 2007-11-12 不揮発性半導体記憶装置
TW097140778A TW200939469A (en) 2007-11-12 2008-10-24 Nonvolatile semiconductor memory device
US12/268,118 US20090140233A1 (en) 2007-11-12 2008-11-10 Nonvolatile semiconductor memory device
KR1020080111556A KR20090049028A (ko) 2007-11-12 2008-11-11 불휘발성 반도체 기억 장치
CNA2008101740296A CN101436606A (zh) 2007-11-12 2008-11-12 非易失性半导体存储器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007292723A JP2009123725A (ja) 2007-11-12 2007-11-12 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2009123725A true JP2009123725A (ja) 2009-06-04
JP2009123725A5 JP2009123725A5 (enExample) 2010-09-09

Family

ID=40674792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007292723A Withdrawn JP2009123725A (ja) 2007-11-12 2007-11-12 不揮発性半導体記憶装置

Country Status (5)

Country Link
US (1) US20090140233A1 (enExample)
JP (1) JP2009123725A (enExample)
KR (1) KR20090049028A (enExample)
CN (1) CN101436606A (enExample)
TW (1) TW200939469A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283486A (ja) * 2008-05-19 2009-12-03 Toshiba Corp 不揮発性記憶装置及びその製造方法
JP2010171332A (ja) * 2009-01-26 2010-08-05 Toshiba Corp 不揮発性半導体記憶装置、及びその製造方法
JP2011243738A (ja) * 2010-05-18 2011-12-01 Hitachi Ltd 不揮発性記憶装置およびその製造方法
JP2012033763A (ja) * 2010-07-30 2012-02-16 Toshiba Corp 不揮発性記憶装置
JP2012234903A (ja) * 2011-04-28 2012-11-29 Hitachi Ltd 半導体記憶装置
JP2013519229A (ja) * 2010-02-09 2013-05-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 相変化メモリ・セル、形成方法、及び形成装置
US8481988B2 (en) 2009-12-04 2013-07-09 Kabushiki Kaisha Toshiba Resistance change memory and manufacturing method thereof
US8507887B2 (en) 2010-03-25 2013-08-13 Kabushiki Kaisha Toshiba Resistance change memory and method of manufacturing the same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5420436B2 (ja) * 2010-01-15 2014-02-19 株式会社日立製作所 不揮発性記憶装置およびその製造方法
CN103137646A (zh) * 2013-03-15 2013-06-05 中国科学院微电子研究所 用于双极型阻变存储器交叉阵列集成方式的选通器件单元
KR102001466B1 (ko) * 2013-09-25 2019-07-18 에스케이하이닉스 주식회사 전자 장치
US8981334B1 (en) * 2013-11-01 2015-03-17 Micron Technology, Inc. Memory cells having regions containing one or both of carbon and boron
US9876054B1 (en) 2016-07-27 2018-01-23 Western Digital Technologies, Inc. Thermal management of selector
US10008665B1 (en) * 2016-12-27 2018-06-26 Intel Corporation Doping of selector and storage materials of a memory cell
US10090067B1 (en) * 2017-05-30 2018-10-02 Seagate Technology Llc Data storage device with rewritable in-place memory
KR102638628B1 (ko) 2017-10-20 2024-02-22 삼성전자주식회사 가변 저항 메모리 소자 및 이의 제조 방법
CN110335942A (zh) * 2019-07-08 2019-10-15 中国科学院上海微系统与信息技术研究所 一种相变存储器及其制作方法
KR102722150B1 (ko) * 2019-07-23 2024-10-28 삼성전자주식회사 가변 저항 메모리 장치 및 그 제조 방법
KR20220033596A (ko) * 2020-09-08 2022-03-17 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 표시 장치 및 이의 제조 방법
CN115443537A (zh) * 2020-11-27 2022-12-06 北京时代全芯存储技术股份有限公司 相变存储器的制备方法和相变存储器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4491870B2 (ja) * 1999-10-27 2010-06-30 ソニー株式会社 不揮発性メモリの駆動方法
EP1609154B1 (en) * 2003-03-18 2013-12-25 Kabushiki Kaisha Toshiba Phase change memory device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283486A (ja) * 2008-05-19 2009-12-03 Toshiba Corp 不揮発性記憶装置及びその製造方法
JP2010171332A (ja) * 2009-01-26 2010-08-05 Toshiba Corp 不揮発性半導体記憶装置、及びその製造方法
US8481988B2 (en) 2009-12-04 2013-07-09 Kabushiki Kaisha Toshiba Resistance change memory and manufacturing method thereof
US9203021B2 (en) 2009-12-04 2015-12-01 Kabushiki Kaisha Toshiba Resistance change memory and manufacturing method thereof
JP2013519229A (ja) * 2010-02-09 2013-05-23 インターナショナル・ビジネス・マシーンズ・コーポレーション 相変化メモリ・セル、形成方法、及び形成装置
US8507887B2 (en) 2010-03-25 2013-08-13 Kabushiki Kaisha Toshiba Resistance change memory and method of manufacturing the same
US8987696B2 (en) 2010-03-25 2015-03-24 Kabushiki Kaisha Toshiba Resistance change memory and method of manufacturing the same
JP2011243738A (ja) * 2010-05-18 2011-12-01 Hitachi Ltd 不揮発性記憶装置およびその製造方法
US9070621B2 (en) 2010-05-18 2015-06-30 Hitachi, Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
JP2012033763A (ja) * 2010-07-30 2012-02-16 Toshiba Corp 不揮発性記憶装置
JP2012234903A (ja) * 2011-04-28 2012-11-29 Hitachi Ltd 半導体記憶装置

Also Published As

Publication number Publication date
US20090140233A1 (en) 2009-06-04
KR20090049028A (ko) 2009-05-15
TW200939469A (en) 2009-09-16
CN101436606A (zh) 2009-05-20

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