JP2005259334A5 - - Google Patents

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Publication number
JP2005259334A5
JP2005259334A5 JP2005028511A JP2005028511A JP2005259334A5 JP 2005259334 A5 JP2005259334 A5 JP 2005259334A5 JP 2005028511 A JP2005028511 A JP 2005028511A JP 2005028511 A JP2005028511 A JP 2005028511A JP 2005259334 A5 JP2005259334 A5 JP 2005259334A5
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JP
Japan
Prior art keywords
state
memory
memory element
storage elements
memory cell
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Application number
JP2005028511A
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English (en)
Japanese (ja)
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JP2005259334A (ja
JP4860160B2 (ja
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Priority to JP2005028511A priority Critical patent/JP4860160B2/ja
Priority claimed from JP2005028511A external-priority patent/JP4860160B2/ja
Publication of JP2005259334A publication Critical patent/JP2005259334A/ja
Publication of JP2005259334A5 publication Critical patent/JP2005259334A5/ja
Application granted granted Critical
Publication of JP4860160B2 publication Critical patent/JP4860160B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005028511A 2004-02-10 2005-02-04 半導体装置 Expired - Fee Related JP4860160B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005028511A JP4860160B2 (ja) 2004-02-10 2005-02-04 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004033081 2004-02-10
JP2004033075 2004-02-10
JP2004033081 2004-02-10
JP2004033075 2004-02-10
JP2005028511A JP4860160B2 (ja) 2004-02-10 2005-02-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2005259334A JP2005259334A (ja) 2005-09-22
JP2005259334A5 true JP2005259334A5 (enExample) 2008-03-13
JP4860160B2 JP4860160B2 (ja) 2012-01-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005028511A Expired - Fee Related JP4860160B2 (ja) 2004-02-10 2005-02-04 半導体装置

Country Status (6)

Country Link
US (1) US7663915B2 (enExample)
EP (1) EP1714294B1 (enExample)
JP (1) JP4860160B2 (enExample)
KR (2) KR101157409B1 (enExample)
CN (1) CN100485816C (enExample)
WO (1) WO2005076281A1 (enExample)

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KR101404439B1 (ko) 2007-06-29 2014-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치 및 전자 기기
JP5408930B2 (ja) 2007-08-31 2014-02-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5371400B2 (ja) * 2007-12-14 2013-12-18 株式会社半導体エネルギー研究所 メモリ及び半導体装置
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KR102465966B1 (ko) 2016-01-27 2022-11-10 삼성전자주식회사 메모리 소자, 및 그 메모리 소자를 포함한 전자 장치
TWI762894B (zh) * 2019-11-05 2022-05-01 友達光電股份有限公司 電路裝置

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