ATE422267T1 - Nichtflüchtige mehrzweckspeicherkarte - Google Patents

Nichtflüchtige mehrzweckspeicherkarte

Info

Publication number
ATE422267T1
ATE422267T1 AT05769444T AT05769444T ATE422267T1 AT E422267 T1 ATE422267 T1 AT E422267T1 AT 05769444 T AT05769444 T AT 05769444T AT 05769444 T AT05769444 T AT 05769444T AT E422267 T1 ATE422267 T1 AT E422267T1
Authority
AT
Austria
Prior art keywords
states
state operation
volatile memory
memory card
memory
Prior art date
Application number
AT05769444T
Other languages
English (en)
Inventor
Ron Barzilai
Reuven Elhamias
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE422267T1 publication Critical patent/ATE422267T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
AT05769444T 2004-07-06 2005-07-06 Nichtflüchtige mehrzweckspeicherkarte ATE422267T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/886,302 US7554842B2 (en) 2001-09-17 2004-07-06 Multi-purpose non-volatile memory card

Publications (1)

Publication Number Publication Date
ATE422267T1 true ATE422267T1 (de) 2009-02-15

Family

ID=35106671

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05769444T ATE422267T1 (de) 2004-07-06 2005-07-06 Nichtflüchtige mehrzweckspeicherkarte

Country Status (9)

Country Link
US (1) US7554842B2 (de)
EP (1) EP1769506B1 (de)
JP (1) JP4971982B2 (de)
KR (1) KR101062149B1 (de)
CN (1) CN101023494B (de)
AT (1) ATE422267T1 (de)
DE (1) DE602005012626D1 (de)
TW (1) TWI382419B (de)
WO (1) WO2006014456A1 (de)

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US7911834B2 (en) * 2006-05-15 2011-03-22 Apple Inc. Analog interface for a flash memory die
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US7511646B2 (en) * 2006-05-15 2009-03-31 Apple Inc. Use of 8-bit or higher A/D for NAND cell value
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KR101391881B1 (ko) * 2007-10-23 2014-05-07 삼성전자주식회사 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 및 읽기방법
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US8743629B2 (en) * 2009-08-31 2014-06-03 Sandisk Il Ltd. Preloading data into a flash storage device
US8214700B2 (en) 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8634240B2 (en) * 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
US8423866B2 (en) * 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8089807B1 (en) * 2010-11-22 2012-01-03 Ge Aviation Systems, Llc Method and system for data storage
KR101798013B1 (ko) 2010-12-30 2017-11-16 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법
EP2673321A2 (de) * 2011-02-09 2013-12-18 Stephen R. Forrest Organische lichtempfindliche vorrichtungen mit arylsquarainen und herstellungsverfahren dafür
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8566671B1 (en) 2012-06-29 2013-10-22 Sandisk Technologies Inc. Configurable accelerated post-write read to manage errors
KR102005709B1 (ko) * 2012-10-22 2019-08-01 삼성전자 주식회사 메모리 장치 구동 방법 및 메모리 시스템
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JP2018160056A (ja) * 2017-03-22 2018-10-11 東芝メモリ株式会社 メモリコントローラ、メモリシステムおよび制御方法
WO2023175684A1 (ja) * 2022-03-14 2023-09-21 キオクシア株式会社 メモリシステム、および、その制御方法、ならびに、情報処理装置

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Also Published As

Publication number Publication date
JP2008506189A (ja) 2008-02-28
KR20070054623A (ko) 2007-05-29
US20050007801A1 (en) 2005-01-13
KR101062149B1 (ko) 2011-09-06
EP1769506A1 (de) 2007-04-04
EP1769506B1 (de) 2009-02-04
TWI382419B (zh) 2013-01-11
US7554842B2 (en) 2009-06-30
DE602005012626D1 (de) 2009-03-19
CN101023494B (zh) 2010-06-02
WO2006014456A1 (en) 2006-02-09
JP4971982B2 (ja) 2012-07-11
TW200617962A (en) 2006-06-01
CN101023494A (zh) 2007-08-22

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