KR101157409B1 - 비휘발성 메모리와 그것을 내장하는 ic 카드, id 카드 및 id 태그 - Google Patents

비휘발성 메모리와 그것을 내장하는 ic 카드, id 카드 및 id 태그 Download PDF

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Publication number
KR101157409B1
KR101157409B1 KR1020067018186A KR20067018186A KR101157409B1 KR 101157409 B1 KR101157409 B1 KR 101157409B1 KR 1020067018186 A KR1020067018186 A KR 1020067018186A KR 20067018186 A KR20067018186 A KR 20067018186A KR 101157409 B1 KR101157409 B1 KR 101157409B1
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South Korea
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memory
state
data
memory element
memory cell
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KR20070022654A (ko
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기요시 가토
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/702—Masking faults in memories by using spares or by reconfiguring by replacing auxiliary circuits, e.g. spare voltage generators, decoders or sense amplifiers, to be used instead of defective ones

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020067018186A 2004-02-10 2005-02-04 비휘발성 메모리와 그것을 내장하는 ic 카드, id 카드 및 id 태그 Expired - Fee Related KR101157409B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004033081 2004-02-10
JP2004033075 2004-02-10
JPJP-P-2004-00033075 2004-02-10
JPJP-P-2004-00033081 2004-02-10
PCT/JP2005/002108 WO2005076281A1 (en) 2004-02-10 2005-02-04 Nonvolatile memory

Related Child Applications (1)

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KR1020127002364A Division KR101264761B1 (ko) 2004-02-10 2005-02-04 비휘발성 메모리와 그것을 내장하는 ｉｃ 카드, ｉｄ 카드 및 ｉｄ 태그

Publications (2)

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KR20070022654A KR20070022654A (ko) 2007-02-27
KR101157409B1 true KR101157409B1 (ko) 2012-06-21

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KR1020067018186A Expired - Fee Related KR101157409B1 (ko) 2004-02-10 2005-02-04 비휘발성 메모리와 그것을 내장하는 ic 카드, id 카드 및 id 태그
KR1020127002364A Expired - Fee Related KR101264761B1 (ko) 2004-02-10 2005-02-04 비휘발성 메모리와 그것을 내장하는 ｉｃ 카드, ｉｄ 카드 및 ｉｄ 태그

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US (1) US7663915B2 (enExample)
EP (1) EP1714294B1 (enExample)
JP (1) JP4860160B2 (enExample)
KR (2) KR101157409B1 (enExample)
CN (1) CN100485816C (enExample)
WO (1) WO2005076281A1 (enExample)

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US7897482B2 (en) * 2007-05-31 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101520284B1 (ko) * 2007-06-25 2015-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101404439B1 (ko) 2007-06-29 2014-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치 및 전자 기기
JP5408930B2 (ja) 2007-08-31 2014-02-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5371400B2 (ja) * 2007-12-14 2013-12-18 株式会社半導体エネルギー研究所 メモリ及び半導体装置
US20110068332A1 (en) * 2008-08-04 2011-03-24 The Trustees Of Princeton University Hybrid Dielectric Material for Thin Film Transistors
WO2010026865A1 (en) * 2008-09-05 2010-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
CN102160178B (zh) 2008-09-19 2013-06-19 株式会社半导体能源研究所 半导体器件
WO2010038601A1 (en) * 2008-09-30 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8780660B2 (en) * 2010-06-08 2014-07-15 Chengdu Kiloway Electronics Inc. Spurious induced charge cleanup for one time programmable (OTP) memory
JP5686698B2 (ja) * 2011-08-05 2015-03-18 ルネサスエレクトロニクス株式会社 半導体装置
US9355026B1 (en) 2012-04-17 2016-05-31 Micron Technology, Inc. Searching using multilevel cells and programming multilevel cells for searching
CN103092315B (zh) 2013-01-09 2015-11-25 惠州Tcl移动通信有限公司 可重启后恢复应用程序的移动终端
KR102465966B1 (ko) 2016-01-27 2022-11-10 삼성전자주식회사 메모리 소자, 및 그 메모리 소자를 포함한 전자 장치
TWI762894B (zh) * 2019-11-05 2022-05-01 友達光電股份有限公司 電路裝置

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Publication number Publication date
KR20070022654A (ko) 2007-02-27
EP1714294B1 (en) 2016-04-20
EP1714294A4 (en) 2007-10-03
US7663915B2 (en) 2010-02-16
CN1918663A (zh) 2007-02-21
CN100485816C (zh) 2009-05-06
WO2005076281A8 (en) 2006-10-19
JP2005259334A (ja) 2005-09-22
US20080144374A1 (en) 2008-06-19
KR101264761B1 (ko) 2013-05-15
KR20120030572A (ko) 2012-03-28
EP1714294A1 (en) 2006-10-25
JP4860160B2 (ja) 2012-01-25
WO2005076281A1 (en) 2005-08-18

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