JP5467536B2 - アンチヒューズ素子 - Google Patents
アンチヒューズ素子 Download PDFInfo
- Publication number
- JP5467536B2 JP5467536B2 JP2011523690A JP2011523690A JP5467536B2 JP 5467536 B2 JP5467536 B2 JP 5467536B2 JP 2011523690 A JP2011523690 A JP 2011523690A JP 2011523690 A JP2011523690 A JP 2011523690A JP 5467536 B2 JP5467536 B2 JP 5467536B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- electrode
- antifuse element
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Fuses (AREA)
- Semiconductor Memories (AREA)
Description
以下の条件で、引出電極の接続部の直径が30μmのアンチヒューズ素子を作製した。図6、図7を参照しつつ説明する。なお、図面は分かりやすいように、模式的に記載した。
11:基板
12:酸化物層
13:密着層
21:下部電極層
22:絶縁層
23:上部電極層
24:クラック
25a,25b,26a,26b:玉化部
27;短絡部
28:消失部
29:構造変化部分
30:保護層
31:無機保護層
32:有機保護層
33:有機絶縁層
41,42:引出電極
41a,42a:接続部
41b,42b:平面部
43,44:外部電極
101:アンチヒューズ素子
102:抵抗素子
103:絶縁体
104,105:端子
106,107:低融点導電物
Claims (6)
- 絶縁層と、前記絶縁層の上下面に形成されている一対の電極層と、前記電極層の前記絶縁層と静電容量を形成している部分と接触するように形成されている引出電極と、を備え、
前記絶縁層の絶縁破壊電圧以上の電圧の印加時に、前記一対の電極層が互いに溶融して前記絶縁層を巻き込むような形態で短絡する短絡部と、前記絶縁層が巻き込まれることにより前記電極層と前記絶縁層とが消失する消失部と、を有する構造変化部分が生じるように構成されており、
前記引出電極の前記電極層と接触する部分の最大径が30μm以上であり、前記構造変化部分の最大径よりも大きい、アンチヒューズ素子。 - 前記引出電極の前記電極層と接触する部分の面積が前記構造変化部分の面積よりも大きい、請求項1に記載のアンチヒューズ素子。
- 前記絶縁層と前記一対の電極層とを被覆する保護層を備える、請求項1又は2に記載のアンチヒューズ素子。
- 前記引出電極は、前記保護層を貫通して前記電極層と接続されている接続部と、前記保護層上に形成されている平面部と、を有する、請求項3に記載のアンチヒューズ素子。
- 基板と、前記引出電極と電気的に接続されている外部電極と、を備え、前記絶縁層と前記一対の電極層と前記外部電極とは前記基板の一方の主面側に形成されている、請求項1〜4のいずれか1項に記載のアンチヒューズ素子。 前記絶縁層と前記一対の電極層とを被覆する保護層を備える、請求項1又は2に記載のアンチヒューズ素子。
- 前記絶縁層の材質が、(Ba,Sr)TiO3であり、前記電極層の材質がAu、Ag、Pt、Pd、Rh、Ir、Ru、Osからなる群より選ばれる少なくとも一種の元素で構成される金属又はその合金である、請求項1〜5のいずれか1項に記載のアンチヒューズ素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011523690A JP5467536B2 (ja) | 2009-07-22 | 2010-07-22 | アンチヒューズ素子 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009171193 | 2009-07-22 | ||
JP2009171193 | 2009-07-22 | ||
JP2011523690A JP5467536B2 (ja) | 2009-07-22 | 2010-07-22 | アンチヒューズ素子 |
PCT/JP2010/062376 WO2011010701A1 (ja) | 2009-07-22 | 2010-07-22 | アンチヒューズ素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011010701A1 JPWO2011010701A1 (ja) | 2013-01-07 |
JP5467536B2 true JP5467536B2 (ja) | 2014-04-09 |
Family
ID=43499173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011523690A Expired - Fee Related JP5467536B2 (ja) | 2009-07-22 | 2010-07-22 | アンチヒューズ素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8610245B2 (ja) |
JP (1) | JP5467536B2 (ja) |
CN (1) | CN102473676B (ja) |
WO (1) | WO2011010701A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5387677B2 (ja) * | 2009-07-09 | 2014-01-15 | 株式会社村田製作所 | アンチヒューズ素子 |
CN105609352B (zh) * | 2016-01-12 | 2018-04-17 | 珠海创飞芯科技有限公司 | 一种薄膜开关及其制备方法 |
US10566253B2 (en) * | 2017-11-30 | 2020-02-18 | Nanya Technology Corporation | Electronic device and electrical testing method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0878532A (ja) * | 1994-09-06 | 1996-03-22 | Toshiba Corp | アンチフューズ素子及びその製造方法 |
JPH1084044A (ja) * | 1996-09-09 | 1998-03-31 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JPH10116909A (ja) * | 1996-10-08 | 1998-05-06 | Kawasaki Steel Corp | アンチフューズ素子を具備した半導体集積回路装置及びその製造方法 |
Family Cites Families (32)
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US4899205A (en) * | 1986-05-09 | 1990-02-06 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US5134457A (en) * | 1986-05-09 | 1992-07-28 | Actel Corporation | Programmable low-impedance anti-fuse element |
US5266829A (en) * | 1986-05-09 | 1993-11-30 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US5210598A (en) * | 1988-08-23 | 1993-05-11 | Seiko Epson Corporation | Semiconductor element having a resistance state transition region of two-layer structure |
US5614756A (en) * | 1990-04-12 | 1997-03-25 | Actel Corporation | Metal-to-metal antifuse with conductive |
US5070384A (en) * | 1990-04-12 | 1991-12-03 | Actel Corporation | Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer |
US5163180A (en) * | 1991-01-18 | 1992-11-10 | Actel Corporation | Low voltage programming antifuse and transistor breakdown method for making same |
US5322812A (en) * | 1991-03-20 | 1994-06-21 | Crosspoint Solutions, Inc. | Improved method of fabricating antifuses in an integrated circuit device and resulting structure |
US5557136A (en) * | 1991-04-26 | 1996-09-17 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
US5290734A (en) * | 1991-06-04 | 1994-03-01 | Vlsi Technology, Inc. | Method for making anti-fuse structures |
WO1993005514A1 (en) * | 1991-09-04 | 1993-03-18 | Vlsi Technology, Inc. | Anti-fuse structures and methods for making same |
EP0564138A1 (en) * | 1992-03-31 | 1993-10-06 | STMicroelectronics, Inc. | Field programmable device |
US5387311A (en) * | 1993-02-16 | 1995-02-07 | Vlsi Technology, Inc. | Method for manufacturing anti-fuse structures |
US5300456A (en) * | 1993-06-17 | 1994-04-05 | Texas Instruments Incorporated | Metal-to-metal antifuse structure |
US5485031A (en) * | 1993-11-22 | 1996-01-16 | Actel Corporation | Antifuse structure suitable for VLSI application |
US5391513A (en) * | 1993-12-22 | 1995-02-21 | Vlsi Technology, Inc. | Wet/dry anti-fuse via etch |
US5469379A (en) * | 1994-06-30 | 1995-11-21 | Vlsi Technology, Inc. | Multi-level vROM programming method and circuit |
US5741720A (en) * | 1995-10-04 | 1998-04-21 | Actel Corporation | Method of programming an improved metal-to-metal via-type antifuse |
US5759876A (en) * | 1995-11-01 | 1998-06-02 | United Technologies Corporation | Method of making an antifuse structure using a metal cap layer |
US5783467A (en) * | 1995-12-29 | 1998-07-21 | Vlsi Technology, Inc. | Method of making antifuse structures using implantation of both neutral and dopant species |
US6069064A (en) * | 1996-08-26 | 2000-05-30 | Micron Technology, Inc. | Method for forming a junctionless antifuse |
US6016001A (en) * | 1997-06-18 | 2000-01-18 | Vlsi Technology, Inc. | Metal to amorphous silicon to metal anti-fuse structure |
US6156588A (en) * | 1998-06-23 | 2000-12-05 | Vlsi Technology, Inc. | Method of forming anti-fuse structure |
US6380003B1 (en) * | 1999-12-22 | 2002-04-30 | International Business Machines Corporation | Damascene anti-fuse with slot via |
GB0111384D0 (en) * | 2001-05-10 | 2001-07-04 | Esm Ltd | Design and processing of antifuse structure |
US6943065B2 (en) * | 2002-03-25 | 2005-09-13 | Micron Technology Inc. | Scalable high performance antifuse structure and process |
EP1846952A4 (en) * | 2005-02-10 | 2012-11-07 | Semiconductor Energy Lab | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
JP4899651B2 (ja) | 2006-06-07 | 2012-03-21 | ソニー株式会社 | 発光ダイオード点灯回路、照明装置及び液晶表示装置 |
JP5525694B2 (ja) * | 2007-03-14 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
US8022503B2 (en) * | 2008-06-03 | 2011-09-20 | United Microelectronics Corp. | Anti-fusse structure and method of fabricating the same |
US8237457B2 (en) * | 2009-07-15 | 2012-08-07 | International Business Machines Corporation | Replacement-gate-compatible programmable electrical antifuse |
US8519509B2 (en) * | 2010-04-16 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
-
2010
- 2010-07-22 JP JP2011523690A patent/JP5467536B2/ja not_active Expired - Fee Related
- 2010-07-22 WO PCT/JP2010/062376 patent/WO2011010701A1/ja active Application Filing
- 2010-07-22 CN CN201080031303.XA patent/CN102473676B/zh not_active Expired - Fee Related
-
2012
- 2012-01-19 US US13/353,836 patent/US8610245B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0878532A (ja) * | 1994-09-06 | 1996-03-22 | Toshiba Corp | アンチフューズ素子及びその製造方法 |
JPH1084044A (ja) * | 1996-09-09 | 1998-03-31 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JPH10116909A (ja) * | 1996-10-08 | 1998-05-06 | Kawasaki Steel Corp | アンチフューズ素子を具備した半導体集積回路装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2011010701A1 (ja) | 2011-01-27 |
US8610245B2 (en) | 2013-12-17 |
CN102473676B (zh) | 2014-10-08 |
JPWO2011010701A1 (ja) | 2013-01-07 |
US20120126365A1 (en) | 2012-05-24 |
CN102473676A (zh) | 2012-05-23 |
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