JP5446078B2 - 半導体デバイス用部材、並びに半導体デバイス用部材形成液及び半導体デバイス用部材の製造方法、並びに、それを用いた半導体発光デバイス、半導体デバイス用部材形成液、及び蛍光体組成物 - Google Patents

半導体デバイス用部材、並びに半導体デバイス用部材形成液及び半導体デバイス用部材の製造方法、並びに、それを用いた半導体発光デバイス、半導体デバイス用部材形成液、及び蛍光体組成物 Download PDF

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JP5446078B2
JP5446078B2 JP2007216452A JP2007216452A JP5446078B2 JP 5446078 B2 JP5446078 B2 JP 5446078B2 JP 2007216452 A JP2007216452 A JP 2007216452A JP 2007216452 A JP2007216452 A JP 2007216452A JP 5446078 B2 JP5446078 B2 JP 5446078B2
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Prior art keywords
phosphor
light
semiconductor device
light emitting
semiconductor
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JP2007216452A
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Japanese (ja)
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JP2008078638A (ja
JP2008078638A5 (enExample
Inventor
波奈子 加藤
寛 森
博 小林
翼 外村
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Publication of JP2008078638A5 publication Critical patent/JP2008078638A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]

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JP2007216452A 2006-08-22 2007-08-22 半導体デバイス用部材、並びに半導体デバイス用部材形成液及び半導体デバイス用部材の製造方法、並びに、それを用いた半導体発光デバイス、半導体デバイス用部材形成液、及び蛍光体組成物 Expired - Fee Related JP5446078B2 (ja)

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JP2007216452A JP5446078B2 (ja) 2006-08-22 2007-08-22 半導体デバイス用部材、並びに半導体デバイス用部材形成液及び半導体デバイス用部材の製造方法、並びに、それを用いた半導体発光デバイス、半導体デバイス用部材形成液、及び蛍光体組成物

Applications Claiming Priority (3)

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JP2006225410 2006-08-22
JP2006225410 2006-08-22
JP2007216452A JP5446078B2 (ja) 2006-08-22 2007-08-22 半導体デバイス用部材、並びに半導体デバイス用部材形成液及び半導体デバイス用部材の製造方法、並びに、それを用いた半導体発光デバイス、半導体デバイス用部材形成液、及び蛍光体組成物

Related Child Applications (2)

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JP2009003366A Division JP2009105432A (ja) 2006-08-22 2009-01-09 半導体デバイス用部材、並びに半導体デバイス用部材形成液及び半導体デバイス用部材の製造方法、並びに、それを用いた半導体発光デバイス、半導体デバイス用部材形成液、及び蛍光体組成物
JP2013206246A Division JP5880512B2 (ja) 2006-08-22 2013-10-01 半導体デバイス用部材形成液、半導体デバイス用部材、及び半導体発光デバイス

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JP2008078638A5 JP2008078638A5 (enExample) 2009-02-26
JP5446078B2 true JP5446078B2 (ja) 2014-03-19

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US8723204B2 (en) * 2008-09-16 2014-05-13 Koninklijke Philips N.V. Polymeric wavelength converting elements
JP2010100733A (ja) * 2008-10-23 2010-05-06 Mitsubishi Chemicals Corp 蛍光体含有組成物の製造方法
JP2010192624A (ja) * 2009-02-17 2010-09-02 Showa Denko Kk 発光装置及び発光モジュール
JP5844252B2 (ja) 2010-04-02 2016-01-13 株式会社カネカ 硬化性樹脂組成物、硬化性樹脂組成物タブレット、成形体、半導体のパッケージ、半導体部品及び発光ダイオード
JP2013118235A (ja) * 2011-12-02 2013-06-13 Hitachi Appliances Inc 照明装置
JP6633308B2 (ja) * 2014-07-16 2020-01-22 日東電工株式会社 偏光フィルムおよびその製造方法
WO2016017818A1 (ja) * 2014-08-01 2016-02-04 大日本印刷株式会社 リフレクター及び樹脂組成物
JP2016086086A (ja) * 2014-10-27 2016-05-19 住友化学株式会社 封止材組成物および光半導体素子
JP2017118111A (ja) * 2015-12-21 2017-06-29 住友化学株式会社 シリコーン系硬化物、シリコーン系硬化物用組成物、及び半導体発光装置

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JP3725178B2 (ja) * 1991-03-22 2005-12-07 東レ・ダウコーニング株式会社 室温硬化性オルガノポリシロキサン組成物
JPH06273942A (ja) * 1993-03-23 1994-09-30 Konica Corp 画像形成方法
JP3334408B2 (ja) * 1995-03-01 2002-10-15 三菱化学株式会社 有機電界発光素子及びその製造方法
JPH08302211A (ja) * 1995-05-09 1996-11-19 Toshiba Silicone Co Ltd 難燃性熱可塑性樹脂組成物
US5674936A (en) * 1996-05-10 1997-10-07 General Electric Company Non-corrosive translucent RTV compositions having good rheology
JP3527369B2 (ja) * 1996-09-04 2004-05-17 東レ・ダウコーニング・シリコーン株式会社 電気部品およびその製造方法
JPH11335493A (ja) * 1998-05-26 1999-12-07 Tokai Rubber Ind Ltd ゴム製品の製法
JP2000129240A (ja) * 1998-10-23 2000-05-09 Dow Corning Toray Silicone Co Ltd 表示装置用充填・接着剤
JP2001192641A (ja) * 2000-01-06 2001-07-17 Dow Corning Toray Silicone Co Ltd シーリング材組成物
FR2825713B1 (fr) * 2001-06-07 2005-03-11 Rhodia Chimie Sa Systeme silicone modulateur d'adherence et son utilisation pour la preparation de compositions anti-adherentes durcissables
JP4360595B2 (ja) * 2002-10-18 2009-11-11 ペルノックス株式会社 光電変換装置
US7160972B2 (en) * 2003-02-19 2007-01-09 Nusil Technology Llc Optically clear high temperature resistant silicone polymers of high refractive index
JP4860099B2 (ja) * 2003-03-12 2012-01-25 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 室温硬化性ポリオルガノシロキサン組成物
JP2006077234A (ja) * 2004-08-10 2006-03-23 Shin Etsu Chem Co Ltd Ｌｅｄ素子封止用樹脂組成物および該組成物を硬化してなる硬化物

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