JP5431345B2 - 結像光学系、この種の結像光学系を含むマイクロリソグラフィのための投影露光装置、及びこの種の投影露光装置を用いて微細構造構成要素を生成する方法 - Google Patents

結像光学系、この種の結像光学系を含むマイクロリソグラフィのための投影露光装置、及びこの種の投影露光装置を用いて微細構造構成要素を生成する方法 Download PDF

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JP5431345B2
JP5431345B2 JP2010530296A JP2010530296A JP5431345B2 JP 5431345 B2 JP5431345 B2 JP 5431345B2 JP 2010530296 A JP2010530296 A JP 2010530296A JP 2010530296 A JP2010530296 A JP 2010530296A JP 5431345 B2 JP5431345 B2 JP 5431345B2
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image
optical system
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imaging
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JP2011501446A5 (enExample
JP2011501446A (ja
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ハンス ユールゲン マン
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0836—Catadioptric systems using more than three curved mirrors
    • G02B17/084—Catadioptric systems using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010530296A 2007-10-26 2008-10-02 結像光学系、この種の結像光学系を含むマイクロリソグラフィのための投影露光装置、及びこの種の投影露光装置を用いて微細構造構成要素を生成する方法 Expired - Fee Related JP5431345B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US98285007P 2007-10-26 2007-10-26
DE102007051669A DE102007051669A1 (de) 2007-10-26 2007-10-26 Abbildende Optik, Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik sowie Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage
DE102007051669.1 2007-10-26
US60/982,850 2007-10-26
PCT/EP2008/008336 WO2009052925A1 (en) 2007-10-26 2008-10-02 Imaging optical system, projection exposure installation for micro-lithography comprising an imaging optical system of this type, and method for producing a microstructured component with a projection exposure installation of this type

Publications (3)

Publication Number Publication Date
JP2011501446A JP2011501446A (ja) 2011-01-06
JP2011501446A5 JP2011501446A5 (enExample) 2011-10-27
JP5431345B2 true JP5431345B2 (ja) 2014-03-05

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JP2010530296A Expired - Fee Related JP5431345B2 (ja) 2007-10-26 2008-10-02 結像光学系、この種の結像光学系を含むマイクロリソグラフィのための投影露光装置、及びこの種の投影露光装置を用いて微細構造構成要素を生成する方法

Country Status (7)

Country Link
US (1) US8558991B2 (enExample)
JP (1) JP5431345B2 (enExample)
KR (1) KR101542268B1 (enExample)
CN (2) CN102354045B (enExample)
DE (1) DE102007051669A1 (enExample)
TW (1) TWI443474B (enExample)
WO (1) WO2009052925A1 (enExample)

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EP2598931B1 (en) 2010-07-30 2020-12-02 Carl Zeiss SMT GmbH Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type
DE102010043498A1 (de) * 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
DE102011076752A1 (de) * 2011-05-31 2012-12-06 Carl Zeiss Smt Gmbh Abbildende Optik
EP2579100A3 (en) 2011-10-03 2017-12-06 ASML Holding N.V. Inspection apparatus, lithographic apparatus, and device manufacturing method
DE102012206153A1 (de) * 2012-04-16 2013-10-17 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
CA2998101C (en) 2014-09-08 2022-12-06 Christopher Robert Debone Grid tied, real time adaptive, distributed intermittent power

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JP4178862B2 (ja) * 2001-08-01 2008-11-12 カール・ツァイス・エスエムティー・アーゲー Ｅｕｖフォトリソグラフィ用の反射投影レンズ
JP2004107011A (ja) * 2002-09-18 2004-04-08 Asmo Co Ltd 給紙装置
JP2004252363A (ja) * 2003-02-21 2004-09-09 Canon Inc 反射型投影光学系
JP4314054B2 (ja) 2003-04-15 2009-08-12 キヤノン株式会社 露光装置及びデバイスの製造方法
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WO2007094414A1 (ja) * 2006-02-16 2007-08-23 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
US7916270B2 (en) * 2006-03-03 2011-03-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
KR20090007277A (ko) * 2006-04-14 2009-01-16 가부시키가이샤 니콘 노광 장치, 디바이스 제조 방법 및 노광 방법
DE102006022958A1 (de) * 2006-05-11 2007-11-22 Carl Zeiss Smt Ag Projektionsbelichtungsanlage, Projektionsbelichtungsverfahren und Verwendung eines Projektionsobjektivs
KR100772701B1 (ko) 2006-09-28 2007-11-02 주식회사 하이닉스반도체 반도체 메모리 장치

Also Published As

Publication number Publication date
US8558991B2 (en) 2013-10-15
CN101836151B (zh) 2012-12-05
KR20100069700A (ko) 2010-06-24
CN102354045B (zh) 2014-09-24
CN102354045A (zh) 2012-02-15
KR101542268B1 (ko) 2015-08-06
DE102007051669A1 (de) 2009-04-30
CN101836151A (zh) 2010-09-15
TWI443474B (zh) 2014-07-01
TW200923596A (en) 2009-06-01
WO2009052925A1 (en) 2009-04-30
JP2011501446A (ja) 2011-01-06
US20100231884A1 (en) 2010-09-16

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