KR101542268B1 - 결상 광학 시스템, 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치 및 이러한 유형의 투영 노광 장치로 미세구조 요소를 제조하는 방법 - Google Patents

결상 광학 시스템, 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치 및 이러한 유형의 투영 노광 장치로 미세구조 요소를 제조하는 방법 Download PDF

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KR101542268B1
KR101542268B1 KR1020107009120A KR20107009120A KR101542268B1 KR 101542268 B1 KR101542268 B1 KR 101542268B1 KR 1020107009120 A KR1020107009120 A KR 1020107009120A KR 20107009120 A KR20107009120 A KR 20107009120A KR 101542268 B1 KR101542268 B1 KR 101542268B1
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optical system
image
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imaging optical
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KR20100069700A (ko
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한스-위르겐 만
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0836—Catadioptric systems using more than three curved mirrors
    • G02B17/084—Catadioptric systems using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107009120A 2007-10-26 2008-10-02 결상 광학 시스템, 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치 및 이러한 유형의 투영 노광 장치로 미세구조 요소를 제조하는 방법 Expired - Fee Related KR101542268B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US98285007P 2007-10-26 2007-10-26
DE102007051669A DE102007051669A1 (de) 2007-10-26 2007-10-26 Abbildende Optik, Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik sowie Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage
US60/982,850 2007-10-26
DE102007051669.1 2007-10-26

Publications (2)

Publication Number Publication Date
KR20100069700A KR20100069700A (ko) 2010-06-24
KR101542268B1 true KR101542268B1 (ko) 2015-08-06

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KR1020107009120A Expired - Fee Related KR101542268B1 (ko) 2007-10-26 2008-10-02 결상 광학 시스템, 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치 및 이러한 유형의 투영 노광 장치로 미세구조 요소를 제조하는 방법

Country Status (7)

Country Link
US (1) US8558991B2 (enExample)
JP (1) JP5431345B2 (enExample)
KR (1) KR101542268B1 (enExample)
CN (2) CN102354045B (enExample)
DE (1) DE102007051669A1 (enExample)
TW (1) TWI443474B (enExample)
WO (1) WO2009052925A1 (enExample)

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US20090303454A1 (en) 2008-06-10 2009-12-10 Nikon Corporation Exposure apparatus with a scanning illumination beam
WO2012013241A1 (en) * 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type
DE102010043498A1 (de) * 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
DE102011076752A1 (de) * 2011-05-31 2012-12-06 Carl Zeiss Smt Gmbh Abbildende Optik
EP2579100A3 (en) 2011-10-03 2017-12-06 ASML Holding N.V. Inspection apparatus, lithographic apparatus, and device manufacturing method
DE102012206153A1 (de) 2012-04-16 2013-10-17 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
WO2016039844A1 (en) 2014-09-08 2016-03-17 Debone Christopher Robert Grid tied, real time adaptive, distributed intermittent power

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US20070153247A1 (en) * 2005-12-06 2007-07-05 Nikon Corporation Exposure apparatus, exposure method, projection optical system and device producing method
WO2007077875A1 (ja) 2005-12-28 2007-07-12 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
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US6631036B2 (en) 1996-09-26 2003-10-07 Carl-Zeiss-Stiftung Catadioptric objective
WO1999049366A1 (en) * 1998-03-20 1999-09-30 Nikon Corporation Photomask and projection exposure system
JPH1184249A (ja) * 1998-07-10 1999-03-26 Nikon Corp 露光装置、及び該装置を用いた露光方法
DE19846928A1 (de) * 1998-10-12 2000-04-13 Zeiss Carl Fa Abbildungssystem mit einem Zylinderlinsenarray
JP2000284494A (ja) * 1999-03-31 2000-10-13 Seiko Epson Corp 露光装置
US6600608B1 (en) 1999-11-05 2003-07-29 Carl-Zeiss-Stiftung Catadioptric objective comprising two intermediate images
WO2002069049A2 (en) * 2001-02-27 2002-09-06 Asml Us, Inc. Simultaneous imaging of two reticles
DE50208750D1 (de) * 2001-08-01 2007-01-04 Zeiss Carl Smt Ag Reflektives Projektionsobjektiv für EUV-Photolithographie
JP2004107011A (ja) * 2002-09-18 2004-04-08 Asmo Co Ltd 給紙装置
JP2004252363A (ja) * 2003-02-21 2004-09-09 Canon Inc 反射型投影光学系
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KR20080101865A (ko) * 2006-02-16 2008-11-21 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
WO2007100087A1 (ja) * 2006-03-03 2007-09-07 Nikon Corporation 露光装置及びデバイス製造方法
DE102006022958A1 (de) 2006-05-11 2007-11-22 Carl Zeiss Smt Ag Projektionsbelichtungsanlage, Projektionsbelichtungsverfahren und Verwendung eines Projektionsobjektivs
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US20030218730A1 (en) * 1997-11-22 2003-11-27 Nikon Corporation Exposure apparatus and methods utilizing plural mask and object stages movable in opposite directions, and methods of producing devices using the same
US20070153247A1 (en) * 2005-12-06 2007-07-05 Nikon Corporation Exposure apparatus, exposure method, projection optical system and device producing method
WO2007077875A1 (ja) 2005-12-28 2007-07-12 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
WO2007119466A1 (ja) 2006-04-14 2007-10-25 Nikon Corporation 露光装置、デバイス製造方法、および露光方法

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Publication number Publication date
TWI443474B (zh) 2014-07-01
DE102007051669A1 (de) 2009-04-30
TW200923596A (en) 2009-06-01
CN102354045B (zh) 2014-09-24
JP2011501446A (ja) 2011-01-06
CN101836151A (zh) 2010-09-15
JP5431345B2 (ja) 2014-03-05
US8558991B2 (en) 2013-10-15
WO2009052925A1 (en) 2009-04-30
KR20100069700A (ko) 2010-06-24
CN101836151B (zh) 2012-12-05
CN102354045A (zh) 2012-02-15
US20100231884A1 (en) 2010-09-16

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