JP5393158B2 - 窒化物半導体素子ならびにその製法 - Google Patents

窒化物半導体素子ならびにその製法 Download PDF

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JP5393158B2
JP5393158B2 JP2008555795A JP2008555795A JP5393158B2 JP 5393158 B2 JP5393158 B2 JP 5393158B2 JP 2008555795 A JP2008555795 A JP 2008555795A JP 2008555795 A JP2008555795 A JP 2008555795A JP 5393158 B2 JP5393158 B2 JP 5393158B2
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layer
nitride semiconductor
nitride
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substrate
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JP2009527913A (ja
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ダートガー アルミン
クロスト アロイス
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Azzurro Semiconductors AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/276—Lateral overgrowth
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
JP2008555795A 2006-02-23 2007-02-22 窒化物半導体素子ならびにその製法 Active JP5393158B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US77645706P 2006-02-23 2006-02-23
DE102006008929.4 2006-02-23
US60/776,457 2006-02-23
DE102006008929A DE102006008929A1 (de) 2006-02-23 2006-02-23 Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung
PCT/EP2007/051708 WO2007096405A1 (de) 2006-02-23 2007-02-22 Nitridhalbleiter-bauelement und verfahren zu seiner herstellung

Related Child Applications (2)

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JP2011180447A Division JP2011233936A (ja) 2006-02-23 2011-08-22 ニトリド半導体素子ならびにその製法
JP2013141735A Division JP2013219391A (ja) 2006-02-23 2013-07-05 窒化物半導体素子ならびにその製法

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JP2009527913A JP2009527913A (ja) 2009-07-30
JP2009527913A5 JP2009527913A5 (https=) 2012-09-20
JP5393158B2 true JP5393158B2 (ja) 2014-01-22

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JP2008555795A Active JP5393158B2 (ja) 2006-02-23 2007-02-22 窒化物半導体素子ならびにその製法
JP2011180447A Withdrawn JP2011233936A (ja) 2006-02-23 2011-08-22 ニトリド半導体素子ならびにその製法
JP2013141735A Withdrawn JP2013219391A (ja) 2006-02-23 2013-07-05 窒化物半導体素子ならびにその製法
JP2015097265A Pending JP2015216378A (ja) 2006-02-23 2015-05-12 窒化物半導体素子ならびにその製法

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JP2011180447A Withdrawn JP2011233936A (ja) 2006-02-23 2011-08-22 ニトリド半導体素子ならびにその製法
JP2013141735A Withdrawn JP2013219391A (ja) 2006-02-23 2013-07-05 窒化物半導体素子ならびにその製法
JP2015097265A Pending JP2015216378A (ja) 2006-02-23 2015-05-12 窒化物半導体素子ならびにその製法

Country Status (9)

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EP (4) EP1875523B1 (https=)
JP (4) JP5393158B2 (https=)
KR (4) KR20150123294A (https=)
CN (1) CN102064091B (https=)
AT (1) ATE483249T1 (https=)
DE (1) DE502007005172D1 (https=)
MY (1) MY149325A (https=)
SG (2) SG10201405004WA (https=)
WO (1) WO2007096405A1 (https=)

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JP2011233936A (ja) 2011-11-17
HK1116922A1 (zh) 2009-01-02
JP2009527913A (ja) 2009-07-30
SG10201405004WA (en) 2014-10-30
SG170031A1 (en) 2011-04-29
EP2112699A2 (de) 2009-10-28
WO2007096405A1 (de) 2007-08-30
JP2013219391A (ja) 2013-10-24
JP2015216378A (ja) 2015-12-03
KR20100017895A (ko) 2010-02-16
CN102064091A (zh) 2011-05-18
EP3731284A1 (de) 2020-10-28
KR20080104014A (ko) 2008-11-28
EP3731283A1 (de) 2020-10-28
EP1875523B1 (de) 2010-09-29
KR101693849B1 (ko) 2017-01-06
DE502007005172D1 (de) 2010-11-11
EP1875523A1 (de) 2008-01-09
CN102064091B (zh) 2013-03-20
ATE483249T1 (de) 2010-10-15
EP2112699A3 (de) 2009-12-30
KR20150123294A (ko) 2015-11-03
EP2112699B1 (de) 2020-05-06
KR20150123293A (ko) 2015-11-03

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