JP2009527913A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009527913A5 JP2009527913A5 JP2008555795A JP2008555795A JP2009527913A5 JP 2009527913 A5 JP2009527913 A5 JP 2009527913A5 JP 2008555795 A JP2008555795 A JP 2008555795A JP 2008555795 A JP2008555795 A JP 2008555795A JP 2009527913 A5 JP2009527913 A5 JP 2009527913A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride semiconductor
- nitride
- semiconductor device
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 claims description 310
- 239000004065 semiconductor Substances 0.000 claims description 257
- 238000000034 method Methods 0.000 claims description 136
- 230000012010 growth Effects 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 76
- 229910052710 silicon Inorganic materials 0.000 claims description 63
- 239000010703 silicon Substances 0.000 claims description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 62
- 230000000873 masking effect Effects 0.000 claims description 57
- 238000004519 manufacturing process Methods 0.000 claims description 51
- 238000010899 nucleation Methods 0.000 claims description 39
- 230000006911 nucleation Effects 0.000 claims description 38
- 229910052782 aluminium Inorganic materials 0.000 claims description 37
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 19
- 229910052733 gallium Inorganic materials 0.000 claims description 19
- 239000013081 microcrystal Substances 0.000 claims description 19
- 230000004927 fusion Effects 0.000 claims description 14
- 238000005259 measurement Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 3
- 238000000227 grinding Methods 0.000 claims 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 394
- 239000000047 product Substances 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 20
- 238000001816 cooling Methods 0.000 description 14
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000001000 micrograph Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000013067 intermediate product Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 230000003698 anagen phase Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000006396 nitration reaction Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- -1 aluminum-silicon-carbon Chemical compound 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77645706P | 2006-02-23 | 2006-02-23 | |
| DE102006008929.4 | 2006-02-23 | ||
| US60/776,457 | 2006-02-23 | ||
| DE102006008929A DE102006008929A1 (de) | 2006-02-23 | 2006-02-23 | Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung |
| PCT/EP2007/051708 WO2007096405A1 (de) | 2006-02-23 | 2007-02-22 | Nitridhalbleiter-bauelement und verfahren zu seiner herstellung |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011180447A Division JP2011233936A (ja) | 2006-02-23 | 2011-08-22 | ニトリド半導体素子ならびにその製法 |
| JP2013141735A Division JP2013219391A (ja) | 2006-02-23 | 2013-07-05 | 窒化物半導体素子ならびにその製法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009527913A JP2009527913A (ja) | 2009-07-30 |
| JP2009527913A5 true JP2009527913A5 (https=) | 2012-09-20 |
| JP5393158B2 JP5393158B2 (ja) | 2014-01-22 |
Family
ID=38020245
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008555795A Active JP5393158B2 (ja) | 2006-02-23 | 2007-02-22 | 窒化物半導体素子ならびにその製法 |
| JP2011180447A Withdrawn JP2011233936A (ja) | 2006-02-23 | 2011-08-22 | ニトリド半導体素子ならびにその製法 |
| JP2013141735A Withdrawn JP2013219391A (ja) | 2006-02-23 | 2013-07-05 | 窒化物半導体素子ならびにその製法 |
| JP2015097265A Pending JP2015216378A (ja) | 2006-02-23 | 2015-05-12 | 窒化物半導体素子ならびにその製法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011180447A Withdrawn JP2011233936A (ja) | 2006-02-23 | 2011-08-22 | ニトリド半導体素子ならびにその製法 |
| JP2013141735A Withdrawn JP2013219391A (ja) | 2006-02-23 | 2013-07-05 | 窒化物半導体素子ならびにその製法 |
| JP2015097265A Pending JP2015216378A (ja) | 2006-02-23 | 2015-05-12 | 窒化物半導体素子ならびにその製法 |
Country Status (9)
| Country | Link |
|---|---|
| EP (4) | EP1875523B1 (https=) |
| JP (4) | JP5393158B2 (https=) |
| KR (4) | KR20150123294A (https=) |
| CN (1) | CN102064091B (https=) |
| AT (1) | ATE483249T1 (https=) |
| DE (1) | DE502007005172D1 (https=) |
| MY (1) | MY149325A (https=) |
| SG (2) | SG10201405004WA (https=) |
| WO (1) | WO2007096405A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9175418B2 (en) | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1620903B1 (en) | 2003-04-30 | 2017-08-16 | Cree, Inc. | High-power solid state light emitter package |
| US9406505B2 (en) | 2006-02-23 | 2016-08-02 | Allos Semiconductors Gmbh | Nitride semiconductor component and process for its production |
| ES2382889T3 (es) * | 2007-08-31 | 2012-06-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Componente semiconductor y su uso |
| US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| KR101004858B1 (ko) * | 2008-11-06 | 2010-12-28 | 삼성엘이디 주식회사 | 화합물 반도체 발광 소자 및 그 제조방법 |
| US8188496B2 (en) | 2008-11-06 | 2012-05-29 | Samsung Led Co., Ltd. | Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same |
| US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
| US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
| DE102009036843A1 (de) | 2009-08-10 | 2011-02-17 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode |
| DE102009047881B4 (de) * | 2009-09-30 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur |
| KR101081169B1 (ko) | 2010-04-05 | 2011-11-07 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법, 발광 소자 패키지, 조명 시스템 |
| US8692261B2 (en) | 2010-05-19 | 2014-04-08 | Koninklijke Philips N.V. | Light emitting device grown on a relaxed layer |
| US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
| WO2011162715A1 (en) * | 2010-06-24 | 2011-12-29 | Glo Ab | Substrate with buffer layer for oriented nanowire growth |
| WO2012035135A1 (de) * | 2010-09-19 | 2012-03-22 | Osram Opto Semiconductors Gmbh | Halbleiterchip und verfahren zu dessen herstellung |
| KR20120032329A (ko) | 2010-09-28 | 2012-04-05 | 삼성전자주식회사 | 반도체 소자 |
| DE102010048617A1 (de) | 2010-10-15 | 2012-04-19 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Halbleiterschichtenfolge, strahlungsemittierender Halbleiterchip und optoelektronisches Bauteil |
| US20120119184A1 (en) * | 2010-11-12 | 2012-05-17 | Kung-Hsieh Hsu | Vertical Light Emitting Diode (VLED) Die Having N-Type Confinement Structure With Etch Stop Layer And Method Of Fabrication |
| US9312436B2 (en) | 2011-05-16 | 2016-04-12 | Kabushiki Kaisha Toshiba | Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer |
| US20120292648A1 (en) * | 2011-05-16 | 2012-11-22 | Kabushiki Kaisha Toshiba | Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer |
| US9012921B2 (en) * | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
| US8664679B2 (en) * | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
| DE102011114671A1 (de) | 2011-09-30 | 2013-04-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| DE102011114670B4 (de) * | 2011-09-30 | 2026-03-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| JP5228122B1 (ja) | 2012-03-08 | 2013-07-03 | 株式会社東芝 | 窒化物半導体素子及び窒化物半導体ウェーハ |
| CN106968014B (zh) * | 2012-03-21 | 2019-06-04 | 弗赖贝格化合物原料有限公司 | 用于制备iii-n单晶的方法以及iii-n单晶 |
| DE102012103686B4 (de) | 2012-04-26 | 2021-07-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Epitaxiesubstrat, Verfahren zur Herstellung eines Epitaxiesubstrats und optoelektronischer Halbleiterchip mit einem Epitaxiesubstrat |
| US9136430B2 (en) | 2012-08-09 | 2015-09-15 | Samsung Electronics Co., Ltd. | Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure |
| US8946773B2 (en) | 2012-08-09 | 2015-02-03 | Samsung Electronics Co., Ltd. | Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure |
| JP5421442B1 (ja) | 2012-09-26 | 2014-02-19 | 株式会社東芝 | 窒化物半導体ウェーハ、窒化物半導体素子及び窒化物半導体ウェーハの製造方法 |
| DE102012217631B4 (de) * | 2012-09-27 | 2022-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement mit einer Schichtstruktur |
| JP5944301B2 (ja) * | 2012-11-19 | 2016-07-05 | 株式会社東芝 | 半導体発光素子の製造方法 |
| JP5296255B1 (ja) | 2012-11-21 | 2013-09-25 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法 |
| JP5460831B1 (ja) | 2012-11-22 | 2014-04-02 | 株式会社東芝 | 半導体発光素子 |
| CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
| JP6270536B2 (ja) | 2013-06-27 | 2018-01-31 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の形成方法 |
| JP2014068018A (ja) * | 2013-10-07 | 2014-04-17 | Toshiba Corp | 半導体発光素子及び半導体発光素子の製造方法 |
| DE102014105303A1 (de) | 2014-04-14 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Schichtstruktur als Pufferschicht eines Halbleiterbauelements sowie Schichtstruktur als Pufferschicht eines Halbleiterbauelements |
| CN103985799B (zh) * | 2014-06-05 | 2017-03-22 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
| JP6264628B2 (ja) * | 2017-01-13 | 2018-01-24 | アルパッド株式会社 | 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法 |
| US10242866B2 (en) * | 2017-03-08 | 2019-03-26 | Lam Research Corporation | Selective deposition of silicon nitride on silicon oxide using catalytic control |
| EP3451364B1 (en) * | 2017-08-28 | 2020-02-26 | Siltronic AG | Heteroepitaxial wafer and method for producing a heteroepitaxial wafer |
| JP6437083B2 (ja) * | 2017-12-06 | 2018-12-12 | アルパッド株式会社 | 半導体ウェーハ及び半導体素子 |
| US11410937B2 (en) | 2020-03-06 | 2022-08-09 | Raytheon Company | Semiconductor device with aluminum nitride anti-deflection layer |
| US12002773B2 (en) | 2021-03-03 | 2024-06-04 | Raytheon Company | Hybrid pocket post and tailored via dielectric for 3D-integrated electrical device |
| US11894477B2 (en) | 2021-05-17 | 2024-02-06 | Raytheon Company | Electrical device with stress buffer layer and stress compensation layer |
| US11851785B2 (en) | 2021-05-21 | 2023-12-26 | Raytheon Company | Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device |
| US12520548B2 (en) | 2021-10-27 | 2026-01-06 | Industrial Technology Research Institute | Semiconductor substrate with balanced stress |
| TWI785864B (zh) | 2021-10-27 | 2022-12-01 | 財團法人工業技術研究院 | 半導體基板以及電晶體 |
| EP4345922B8 (en) * | 2022-09-30 | 2025-06-11 | ALLOS Semiconductors GmbH | Gan-on-si epiwafer comprising a strain-decoupling sub-stack |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11135832A (ja) * | 1997-10-26 | 1999-05-21 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体及びその製造方法 |
| TW417315B (en) * | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
| US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
| US6903376B2 (en) * | 1999-12-22 | 2005-06-07 | Lumileds Lighting U.S., Llc | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
| JP3603713B2 (ja) * | 1999-12-27 | 2004-12-22 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体膜の成長方法及びｉｉｉ族窒化物系化合物半導体素子 |
| FR2810159B1 (fr) * | 2000-06-09 | 2005-04-08 | Centre Nat Rech Scient | Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche |
| US6630692B2 (en) * | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
| JP2003063897A (ja) * | 2001-08-28 | 2003-03-05 | Sony Corp | 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法 |
| DE10151092B4 (de) | 2001-10-13 | 2012-10-04 | Azzurro Semiconductors Ag | Verfahren zur Herstellung von planaren und rißfreien Gruppe-III-Nitrid-basierten Lichtemitterstrukturen auf Silizium Substrat |
| JP4041908B2 (ja) * | 2001-12-19 | 2008-02-06 | サンケン電気株式会社 | 半導体発光素子の製造方法 |
| JP4118061B2 (ja) * | 2002-02-07 | 2008-07-16 | 三洋電機株式会社 | 半導体の形成方法および半導体素子 |
| JP2003249642A (ja) * | 2002-02-22 | 2003-09-05 | Fuji Xerox Co Ltd | ヘテロ接合半導体素子及びその製造方法 |
| JP4100013B2 (ja) * | 2002-03-14 | 2008-06-11 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
| JP4233268B2 (ja) * | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
| CN1228478C (zh) * | 2002-11-13 | 2005-11-23 | 中国科学院物理研究所 | 制备氮化镓单晶薄膜的方法 |
| JP2004200347A (ja) * | 2002-12-18 | 2004-07-15 | Sumitomo Electric Ind Ltd | 高放熱性能を持つ発光ダイオード |
| TWI230978B (en) * | 2003-01-17 | 2005-04-11 | Sanken Electric Co Ltd | Semiconductor device and the manufacturing method thereof |
| JP4662918B2 (ja) * | 2003-01-31 | 2011-03-30 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 半導体構成素子の製造のための方法 |
| JP3760997B2 (ja) * | 2003-05-21 | 2006-03-29 | サンケン電気株式会社 | 半導体基体 |
| JP2005223165A (ja) * | 2004-02-06 | 2005-08-18 | Sanyo Electric Co Ltd | 窒化物系発光素子 |
| JP4868709B2 (ja) * | 2004-03-09 | 2012-02-01 | 三洋電機株式会社 | 発光素子 |
| US7465592B2 (en) * | 2004-04-28 | 2008-12-16 | Verticle, Inc. | Method of making vertical structure semiconductor devices including forming hard and soft copper layers |
| DE102004038573A1 (de) | 2004-08-06 | 2006-03-16 | Azzurro Semiconductors Ag | Verfahren zum epitaktischen Wachstum dicker, rissfreier Gruppe-III-Nitrid Halbleiterschichten mittels metallorganischer Gasphasenepitaxie auf Si oder SIC |
-
2007
- 2007-02-22 KR KR1020157026543A patent/KR20150123294A/ko not_active Ceased
- 2007-02-22 EP EP07726466A patent/EP1875523B1/de active Active
- 2007-02-22 EP EP20000205.3A patent/EP3731284A1/de not_active Withdrawn
- 2007-02-22 CN CN2010105147625A patent/CN102064091B/zh active Active
- 2007-02-22 JP JP2008555795A patent/JP5393158B2/ja active Active
- 2007-02-22 KR KR1020097026747A patent/KR20100017895A/ko not_active Ceased
- 2007-02-22 KR KR1020087023046A patent/KR101693849B1/ko active Active
- 2007-02-22 DE DE502007005172T patent/DE502007005172D1/de active Active
- 2007-02-22 AT AT07726466T patent/ATE483249T1/de active
- 2007-02-22 SG SG10201405004WA patent/SG10201405004WA/en unknown
- 2007-02-22 EP EP09165796.5A patent/EP2112699B1/de active Active
- 2007-02-22 WO PCT/EP2007/051708 patent/WO2007096405A1/de not_active Ceased
- 2007-02-22 KR KR1020157026538A patent/KR20150123293A/ko not_active Ceased
- 2007-02-22 EP EP20000202.0A patent/EP3731283A1/de not_active Withdrawn
- 2007-02-22 MY MYPI20083249A patent/MY149325A/en unknown
- 2007-02-22 SG SG201101341-4A patent/SG170031A1/en unknown
-
2011
- 2011-08-22 JP JP2011180447A patent/JP2011233936A/ja not_active Withdrawn
-
2013
- 2013-07-05 JP JP2013141735A patent/JP2013219391A/ja not_active Withdrawn
-
2015
- 2015-05-12 JP JP2015097265A patent/JP2015216378A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| US9175418B2 (en) | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5393158B2 (ja) | 窒化物半導体素子ならびにその製法 | |
| US12272761B2 (en) | Nitride semiconductor component and process for its production | |
| JP2009527913A5 (https=) | ||
| CN101427391B (zh) | 氮化物半导体部件及其制造工艺 | |
| US7537949B2 (en) | Optoelectronic substrate and methods of making same | |
| JP6067801B2 (ja) | 高品質ホモエピタキシ用微傾斜窒化ガリウム基板 | |
| CN100380588C (zh) | 氮化镓层的制备方法 | |
| CN103843161B (zh) | 用于制造光电子半导体芯片的方法和光电子半导体芯片 | |
| JP2007106665A (ja) | 格子パラメータを変化させる元素を含有する窒化ガリウムデバイス基板 | |
| JP2013517621A (ja) | 基板の熱膨張を補償する層を備える半導体発光装置 | |
| KR102556712B1 (ko) | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법 | |
| KR20050033911A (ko) | 질화갈륨계 단결정 기판의 제조방법 | |
| KR102480141B1 (ko) | 압전 박막을 제조하는 방법 및 이 박막을 이용하는 소자 | |
| JP4257815B2 (ja) | 半導体装置 | |
| KR101189399B1 (ko) | 질화물 반도체 발광소자 및 그 제조 방법 | |
| HK1116922B (en) | Nitride semiconductor component and method for the production thereof |