JP5377340B2 - ダイ、スタック構造、及びシステム - Google Patents
ダイ、スタック構造、及びシステム Download PDFInfo
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- JP5377340B2 JP5377340B2 JP2010000893A JP2010000893A JP5377340B2 JP 5377340 B2 JP5377340 B2 JP 5377340B2 JP 2010000893 A JP2010000893 A JP 2010000893A JP 2010000893 A JP2010000893 A JP 2010000893A JP 5377340 B2 JP5377340 B2 JP 5377340B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
[実施例]
110,120,210,220,230,310,320,330,410,420,430,510,520,530,610,620,630 ダイ
110a,120a 基板
110b,120b,210b,220b,230b,310b,320b,330b,410b,420b,430b,510b,520b,530b,610b,620b,630b チップ/基板領域
113,123,213,223,233,313,323,333,413,423,433,513,523,533,613,623,633 シールリング構造
115,125,215,225,315,325,415,425,515,525,615,625 シリコン貫通ビア
117,127,217,227,237,317,327,337,417,427,437,517,527,537,617,627,637 手段
118,128,218,228,238,240,250,318,328,338,340,350,418,428,438,440,450,518,528,538,540,550,618,628,638,640,650 バンプ構造
119,129,219,229,239,319,329,339,419,429,439,519,529,539,619,629,639 相互接続構造
130 スクライブライン
201,301,401,501,601 積層構造
218a,318a,418a,518a,618a 内側バンプ
218b,318b,418b 外側バンプ
260,265,360,365,460,465,560,565,660,665 アンダーフィル材料
h 高度
t 厚さ
Claims (7)
- 基板の下方にあり、基板領域の周りにあるシールリング構造、
前記基板の下面に配置され、前記シールリング構造に結合された少なくとも1つのバンプ、及び前記基板の上方にあり、前記シールリング構造に結合し、前記基板領域内へのイオンの拡散を実質的に防ぐ少なくとも1つの手段であって、前記基板領域の少なくとも1つのシリコン貫通ビア構造の周りに配置された複数のビアを含む前記少なくとも1つの手段、を含むダイ。 - 第1基板の下方にあり、第1基板領域の周りにある第1シールリング構造、
前記第1基板の下面に配置され、前記第1シールリング構造に結合された少なくとも1つの第1バンプ構造、及び前記第1基板の上方にあり、前記第1シールリング構造に結合し、前記第1基板領域内へのイオンの拡散を実質的に防ぐ第1手段を含む第1ダイ、
及び前記第1ダイに電気的に結合する第2ダイを含む積層構造。 - 前記第2ダイは、第2基板の下方にあり、第2基板領域の周りにある第2シールリング構造、及び前記第2基板の上方にあり、前記第2シールリング構造に結合し、前記第2基板領域内へのイオンの拡散を実質的に防ぐ少なくとも1つの第2手段を含む請求項2に記載の積層構造。
- 前記第1手段と前記第2手段のそれぞれは、前記第1基板領域及び前記第2基板領域の少なくとも1つのシリコン貫通ビア(TSV)構造の周りに連続的に延伸する請求項3に記載の積層構造。
- 前記第2ダイは、前記第2基板の上面に配置され、前記少なくとも1つの第2手段に結合された少なくとも1つの第2バンプ構造を更に含み、前記少なくとも1つの第1バンプ構造は、前記少なくとも1つの第2バンプ構造に結合され、前記第1バンプ構造と前記第2バンプ構造の中の少なくとも1つは、前記第1基板領域または前記第2基板領域の周りに連続的に延伸する請求項3に記載の積層構造。
- 前記第2ダイは、前記第2基板の上面に配置され、前記少なくとも1つの第2手段に結合された少なくとも1つの第2バンプ構造を更に含み、前記少なくとも1つの第1バンプ構造は、前記少なくとも1つの第2バンプ構造に結合され、前記第1バンプ構造と前記第2バンプ構造の中の少なくとも1つは、前記第1基板領域または前記第2基板領域の周りに複数のバンプを含む請求項3に記載の積層構造。
- 基板、及び前記基板に電気的に結合した積層構造を含み、前記積層構造は、第1基板の下方にあり、第1基板領域の周りにある第1シールリング構造、前記第1基板の下面に配置され、前記第1シールリング構造に結合された少なくとも1つの第1バンプ構造、及び前記第1基板の上方にあり、前記第1シールリング構造に結合し、前記第1基板領域内へのイオンの拡散を実質的に防ぐ少なくとも1つの第1手段であって、前記第1基板領域の少なくとも1つのシリコン貫通ビア構造の周りに配置された複数のビアを含む前記少なくとも1つの第1手段、を含む第1ダイ、及び第2基板の下方にあり、第2基板領域の周りにある第2シールリング構造、前記第2基板の上方にあり、前記第2シールリング構造に結合され、前記第2基板領域内へのイオンの拡散を実質的に防ぐ少なくとも1つの第2手段であって、前記第2基板領域の少なくとも1つのシリコン貫通ビア構造の周りに配置された複数のビアを含む前記少なくとも1つの第2手段、及び前記第2基板の上面に配置され、前記第2手段に結合された少なくとも1つの第2バンプ構造、を含む第2ダイを含み、前記第1バンプ構造は前記第2バンプ構造に結合し、前記第1ダイは前記第2ダイに電気的に結合したシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/349,901 US8749027B2 (en) | 2009-01-07 | 2009-01-07 | Robust TSV structure |
US12/349,901 | 2009-01-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010161367A JP2010161367A (ja) | 2010-07-22 |
JP5377340B2 true JP5377340B2 (ja) | 2013-12-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010000893A Active JP5377340B2 (ja) | 2009-01-07 | 2010-01-06 | ダイ、スタック構造、及びシステム |
Country Status (5)
Country | Link |
---|---|
US (1) | US8749027B2 (ja) |
JP (1) | JP5377340B2 (ja) |
KR (1) | KR101130532B1 (ja) |
CN (1) | CN101771019B (ja) |
TW (1) | TWI398941B (ja) |
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US20100171203A1 (en) | 2010-07-08 |
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US8749027B2 (en) | 2014-06-10 |
KR101130532B1 (ko) | 2012-03-28 |
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