JP5367754B2 - 半田メッキ線の製造方法及び製造装置 - Google Patents
半田メッキ線の製造方法及び製造装置 Download PDFInfo
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- JP5367754B2 JP5367754B2 JP2011078952A JP2011078952A JP5367754B2 JP 5367754 B2 JP5367754 B2 JP 5367754B2 JP 2011078952 A JP2011078952 A JP 2011078952A JP 2011078952 A JP2011078952 A JP 2011078952A JP 5367754 B2 JP5367754 B2 JP 5367754B2
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- 229910000679 solder Inorganic materials 0.000 title claims description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 238000007747 plating Methods 0.000 claims description 186
- 238000004804 winding Methods 0.000 claims description 141
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 71
- 238000000034 method Methods 0.000 claims description 61
- 238000000137 annealing Methods 0.000 claims description 48
- 238000011144 upstream manufacturing Methods 0.000 claims description 41
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 description 27
- 238000010438 heat treatment Methods 0.000 description 25
- 239000007789 gas Substances 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000002253 acid Substances 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 230000005484 gravity Effects 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000314 lubricant Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013020 steam cleaning Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- B21C47/00—Winding-up, coiling or winding-off metal wire, metal band or other flexible metal material characterised by features relevant to metal processing only
- B21C47/003—Regulation of tension or speed; Braking
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B21C47/00—Winding-up, coiling or winding-off metal wire, metal band or other flexible metal material characterised by features relevant to metal processing only
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B21C47/00—Winding-up, coiling or winding-off metal wire, metal band or other flexible metal material characterised by features relevant to metal processing only
- B21C47/02—Winding-up or coiling
- B21C47/10—Winding-up or coiling by means of a moving guide
- B21C47/12—Winding-up or coiling by means of a moving guide the guide moving parallel to the axis of the coil
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B21C47/00—Winding-up, coiling or winding-off metal wire, metal band or other flexible metal material characterised by features relevant to metal processing only
- B21C47/34—Feeding or guiding devices not specially adapted to a particular type of apparatus
- B21C47/345—Feeding or guiding devices not specially adapted to a particular type of apparatus for monitoring the tension or advance of the material
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- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
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- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
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- C23C2/0224—Two or more thermal pretreatments
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
- C23C2/024—Pretreatment of the material to be coated, e.g. for coating on selected surface areas by cleaning or etching
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
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- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
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- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/50—Controlling or regulating the coating processes
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Description
しかし、太陽電池セルが薄型化すると強度が弱くなり、太陽電池セルにおける太陽電池用リード線を半田接続した接続部分は、互いの膨張率の違いにより太陽電池セルに反りや破損が発生し易くなるという問題があった。
特許文献2における太陽電池用平角導体の製造方法は、導体を圧延などの工程により平角状に成形した後、熱処理工程により0.2%耐力を低減することや、導体の表面に半田メッキ膜を施す製造方法である。
本実施形態の半田メッキ線の製造装置10は、図1に示すように、被メッキ線1aに対してメッキ前処理を行うメッキ前処理手段2と、被メッキ線1aの表面に半田メッキを施すメッキ手段61と、表面にメッキを施したメッキ線1bを巻取る巻取り手段71とで構成している。
巻取り手段71は、巻取り張力調節機72、及び、ボビントラバース方式巻取り機75で構成している。
槽上方向転換ローラ65は、巻取り手段上流側配置ローラ73Aよりも高い位置に配置している。
半田メッキ線の製造方法は、被メッキ線1aに対してメッキ前処理を行うメッキ前処理工程と、被メッキ線1aの表面に半田メッキを施すメッキ工程と、表面にメッキを施したメッキ線1bを巻取る巻取り工程とを経て製造される。
軟化焼鈍工程では、内部を還元ガス雰囲気とした軟化焼鈍炉51の内部に被メッキ線1aを走行させることで該被メッキ線1aを軟化焼鈍して低耐力化するとともに、被メッキ線1aの表面の酸化層を還元する工程である。
半田メッキ線の製造装置10は、メッキ前処理手段2としてのサプライヤ11、加熱処理炉22、酸洗浄槽31、超音波水洗浄槽41、及び、軟化焼鈍炉51と、メッキ手段61としての溶融半田メッキ槽62と、巻取り手段71を、それぞれメッキ線1bの走行方向の上流側から下流側へこの順に一連配置している。
溶融半田メッキ槽62の上方に備えた槽上方向転換ローラ65は、巻取り手段上流側配置ローラ73Aの配置高さよりも高い位置に配置したことを特徴とする。
本実験では、溶融半田メッキ槽62に貯溜した半田液面に対して鉛直上方に備えたメッキ槽上ローラの配置高さの違いにより、巻き取り工程で巻き取り後のメッキ線1bの0.2%耐力値の影響について検証する実験を行った。
なお、図5は、本実験で用いた装置の一部を示す概略図であり、図5中、二点点鎖線で示した走行経路は、本発明例におけるメッキ線1bの走行経路を示し、図5中、一点鎖線で示した走行経路は、従来例におけるメッキ線1bの走行経路を示す。また、本発明例、従来例のいずれの場合も、巻取り手段上流側配置ローラ73Aの配置高さは、半田液面に対して0.9m(H)に設定している。
1b…メッキ線
2…メッキ前処理手段
10…メッキ線の製造装置
12…サプライヤ
22…加熱処理炉
31…酸洗浄槽
41…超音波水洗浄槽
51…軟化焼鈍炉
57…還元ガス供給部
61…メッキ手段
62…溶融半田メッキ槽
63…溶融半田メッキ液
71…巻取り手段
72…巻取り張力調節機
73A…巻取り手段上流側配置ローラ
75…ボビントラバース方式巻取り機
G…還元ガス
Claims (2)
- 銅線に対してメッキ前処理を行うメッキ前処理手段と、
銅線の表面に半田メッキを施すメッキ手段と、
表面にメッキを施した銅線を巻取る巻取り手段とで構成される半田メッキ線の製造装置であって、
前記銅線を、純銅系材料で形成し、
前記メッキ前処理手段に、銅線を軟化焼鈍して低耐力化する軟化焼鈍手段を備え、
低耐力化した前記銅線を、該銅線の耐力よりも低い巻取り力で前記巻取り手段により巻取る構成とし、
前記軟化焼鈍手段、前記メッキ手段、及び、前記巻取り手段を、銅線の走行方向の上流側からこの順に一連配置し、
前記メッキ手段を、溶融半田メッキ液が貯溜された溶融半田メッキ槽で構成し、
銅線の走行方向を転換する方向転換ローラを、槽中方向転換ローラと槽上方向転換ローラとで構成し、
前記槽中方向転換ローラを、
前記溶融半田メッキ槽の内部に備えられ、前記溶融半田メッキ槽を通過する銅線の走行方向を鉛直上方に転換可能に駆動手段により能動回転する能動回転ローラにより構成し、
前記槽上方向転換ローラを、
前記溶融半田メッキ槽の上方に備えられ、前記溶融半田メッキ槽を通過後の銅線の走行方向を前記巻取り手段の側へ転換可能に構成し、
前記巻取り手段において、銅線を架け渡す固定ローラのうち、最も上流側に配置され、前記槽上方向転換ローラを通過後の銅線を前記巻取り手段における下流側に案内する巻取り手段上流側配置ローラを構成し、
前記槽上方向転換ローラを、前記巻取り手段上流側配置ローラの配置高さよりも高い位置であるとともに、前記溶融半田メッキ槽に貯溜した溶融半田メッキ液の液面から出た銅線の表面に付着した溶融半田メッキ液が凝固する高さに配置した
半田メッキ線の製造装置。 - 銅線に対してメッキ前処理を行うメッキ前処理工程と、
メッキ手段において、銅線の表面に半田メッキを施すメッキ工程と、
表面にメッキを施した銅線を巻取る巻取り工程とを経て製造される半田メッキ線の製造方法であって、
前記銅線には、純銅系材料で形成したものを用い、
前記メッキ前処理工程では、銅線を軟化焼鈍して低耐力化する軟化焼鈍工程を行い、
前記巻取り工程を、
低耐力化した前記銅線の耐力よりも低い巻取り力で巻取る工程とし、
前記巻取り工程の間、前記軟化焼鈍工程と前記メッキ工程とを連続して行い、
前記メッキ手段を、溶融半田メッキ液が貯溜された溶融半田メッキ槽で構成し、
銅線の走行方向を転換する方向転換ローラを、槽中方向転換ローラと槽上方向転換ローラとで構成し、
前記槽中方向転換ローラを、
前記溶融半田メッキ槽の内部に備えられ、駆動手段により能動回転する能動回転ローラにより構成し、
前記槽上方向転換ローラを、
前記溶融半田メッキ槽の上方に備えられ、前記溶融半田メッキ槽を通過後の銅線の走行方向を鉛直上方に転換可能に構成し、
前記巻取り手段において、銅線を架け渡す固定ローラのうち、最も上流側に配置され、前記槽上方向転換ローラを通過後の銅線を前記巻取り手段における下流側に案内する巻取り手段上流側配置ローラを構成し、
前記槽上方向転換ローラを、前記巻取り手段上流側配置ローラの配置高さよりも高い位置であるとともに、前記溶融半田メッキ槽に貯溜した溶融半田メッキ液の液面から出た銅線の表面に付着した溶融半田メッキ液が凝固する高さに配置し、
前記メッキ工程において、前記槽中方向転換ローラによって、前記溶融半田メッキ槽を通過する銅線の走行方向を鉛直上方に転換可能し、
前記メッキ工程後に、前記槽上方向転換ローラによって、前記溶融半田メッキ槽を通過後の銅線の走行方向を前記巻取り手段上流側配置ローラの側へ方向転換する
半田メッキ線の製造方法。
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