JP5365223B2 - 撮像装置、撮像装置の信号処理方法およびイメージセンサチップ - Google Patents

撮像装置、撮像装置の信号処理方法およびイメージセンサチップ Download PDF

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JP5365223B2
JP5365223B2 JP2009018069A JP2009018069A JP5365223B2 JP 5365223 B2 JP5365223 B2 JP 5365223B2 JP 2009018069 A JP2009018069 A JP 2009018069A JP 2009018069 A JP2009018069 A JP 2009018069A JP 5365223 B2 JP5365223 B2 JP 5365223B2
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column
analog
data
circuit
pixel array
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JP2009018069A
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Japanese (ja)
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JP2010178033A (ja
JP2010178033A5 (enExample
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寿孝 水口
克義 山本
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Fujitsu Semiconductor Ltd
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Fujitsu Semiconductor Ltd
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Priority to JP2009018069A priority Critical patent/JP5365223B2/ja
Priority to US12/692,037 priority patent/US20100188542A1/en
Publication of JP2010178033A publication Critical patent/JP2010178033A/ja
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75Circuitry for providing, modifying or processing image signals from the pixel array
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009018069A 2009-01-29 2009-01-29 撮像装置、撮像装置の信号処理方法およびイメージセンサチップ Expired - Fee Related JP5365223B2 (ja)

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Application Number Priority Date Filing Date Title
JP2009018069A JP5365223B2 (ja) 2009-01-29 2009-01-29 撮像装置、撮像装置の信号処理方法およびイメージセンサチップ
US12/692,037 US20100188542A1 (en) 2009-01-29 2010-01-22 Imaging device and image sensor chip

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JP2009018069A JP5365223B2 (ja) 2009-01-29 2009-01-29 撮像装置、撮像装置の信号処理方法およびイメージセンサチップ

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JP2010178033A JP2010178033A (ja) 2010-08-12
JP2010178033A5 JP2010178033A5 (enExample) 2011-12-15
JP5365223B2 true JP5365223B2 (ja) 2013-12-11

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US (1) US20100188542A1 (enExample)
JP (1) JP5365223B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010154372A (ja) * 2008-12-25 2010-07-08 Panasonic Corp 固体撮像装置、デジタルカメラ及びad変換方法
KR101948057B1 (ko) * 2012-04-13 2019-02-14 삼성전자주식회사 상관 이중 샘플링 회로 및 이를 포함하는 이미지 센서
JP6019714B2 (ja) * 2012-04-27 2016-11-02 ソニー株式会社 信号処理装置および方法、撮像装置、並びに、固体撮像素子
JP7353752B2 (ja) * 2018-12-06 2023-10-02 キヤノン株式会社 光電変換装置及び撮像システム

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057581A (ja) * 2000-08-10 2002-02-22 Sony Corp サンプリング処理装置及びこれを用いた撮像装置
US8169517B2 (en) * 2001-03-26 2012-05-01 Panavision Imaging Llc Image sensor ADC and CDS per column with oversampling
JP4601897B2 (ja) * 2002-11-13 2010-12-22 ソニー株式会社 固体撮像装置及びその駆動方法
US7408443B2 (en) * 2003-01-13 2008-08-05 Samsung Electronics Co., Ltd. Circuit and method for reducing fixed pattern noise
JP4247995B2 (ja) * 2005-02-03 2009-04-02 富士通マイクロエレクトロニクス株式会社 固体撮像素子のデータ読出回路、撮像装置および固体撮像素子のデータ読出方法
JP4613311B2 (ja) * 2005-02-10 2011-01-19 国立大学法人静岡大学 2重積分型a/d変換器、カラム処理回路、及び固体撮像装置
JP2008103992A (ja) * 2006-10-19 2008-05-01 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2008141610A (ja) * 2006-12-04 2008-06-19 Matsushita Electric Ind Co Ltd 固体撮像装置及び撮像システム

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JP2010178033A (ja) 2010-08-12
US20100188542A1 (en) 2010-07-29

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