JP5364173B2 - スパッタリングターゲット - Google Patents

スパッタリングターゲット Download PDF

Info

Publication number
JP5364173B2
JP5364173B2 JP2011545566A JP2011545566A JP5364173B2 JP 5364173 B2 JP5364173 B2 JP 5364173B2 JP 2011545566 A JP2011545566 A JP 2011545566A JP 2011545566 A JP2011545566 A JP 2011545566A JP 5364173 B2 JP5364173 B2 JP 5364173B2
Authority
JP
Japan
Prior art keywords
target
angle
inclined surface
sputtering
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011545566A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2012101850A1 (ja
Inventor
吉一 熊原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
JX Nippon Mining and Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Priority to JP2011545566A priority Critical patent/JP5364173B2/ja
Application granted granted Critical
Publication of JP5364173B2 publication Critical patent/JP5364173B2/ja
Publication of JPWO2012101850A1 publication Critical patent/JPWO2012101850A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2011545566A 2011-01-26 2011-08-04 スパッタリングターゲット Active JP5364173B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011545566A JP5364173B2 (ja) 2011-01-26 2011-08-04 スパッタリングターゲット

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011013702 2011-01-26
JP2011013702 2011-01-26
PCT/JP2011/067833 WO2012101850A1 (ja) 2011-01-26 2011-08-04 スパッタリングターゲット
JP2011545566A JP5364173B2 (ja) 2011-01-26 2011-08-04 スパッタリングターゲット

Publications (2)

Publication Number Publication Date
JP5364173B2 true JP5364173B2 (ja) 2013-12-11
JPWO2012101850A1 JPWO2012101850A1 (ja) 2014-06-30

Family

ID=46580442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011545566A Active JP5364173B2 (ja) 2011-01-26 2011-08-04 スパッタリングターゲット

Country Status (5)

Country Link
JP (1) JP5364173B2 (ko)
KR (2) KR20140139140A (ko)
CN (1) CN102791904B (ko)
TW (1) TWI510660B (ko)
WO (1) WO2012101850A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103820759A (zh) * 2013-08-27 2014-05-28 中国建材国际工程集团有限公司 一种提高矩形平面磁控溅射阴极靶材利用率的方法
WO2019223685A1 (zh) * 2018-05-21 2019-11-28 米亚索乐装备集成（福建）有限公司 一种靶材、靶材制备方法及装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138361A (ja) * 1989-10-20 1991-06-12 Tokyo Electron Ltd スパッタ用ターゲット及びスパッタ方法
JPH0544028A (ja) * 1991-08-12 1993-02-23 Fujitsu Ltd スパツタ装置のターゲツト
JPH05287524A (ja) * 1992-04-09 1993-11-02 Anelva Corp マグネトロンスパッタリング用ターゲット
JPH0616461U (ja) * 1992-01-29 1994-03-04 ライボルト アクチエンゲゼルシヤフト カソードスパッタリング装置用ターゲット
JPH10195644A (ja) * 1996-08-23 1998-07-28 Applied Materials Inc スパッタチャンバ及びスッパタターゲット
JP2000129433A (ja) * 1998-10-28 2000-05-09 Mitsubishi Materials Corp 光磁気記録媒体膜形成用スパッタリングターゲット
JP2000204468A (ja) * 1999-01-08 2000-07-25 Tosoh Corp 多分割スパッタリングタ―ゲット
JP2000265270A (ja) * 1999-03-18 2000-09-26 Anelva Corp スパッタリング装置のマグネトロンカソード
JP2002517610A (ja) * 1998-06-01 2002-06-18 プラクスエアー エス ティー テクノロジー インコーポレーテッド 輪郭づけスパッタリングターゲット
JP2004083985A (ja) * 2002-08-26 2004-03-18 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットおよびその製造方法
JP2004211202A (ja) * 2002-12-26 2004-07-29 Samsung Electronics Co Ltd スパッタリング用ターゲットとこれを含むスパッタチャンバー及びスパッタリング方法
WO2006054409A1 (ja) * 2004-11-17 2006-05-26 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット、スパッタリングターゲット－バッキングプレート組立体及び成膜装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04318439A (ja) 1991-04-17 1992-11-10 Toyota Motor Corp 輸送配管の異常検知装置
JPH06172991A (ja) * 1992-11-30 1994-06-21 Mitsui Mining & Smelting Co Ltd マグネトロンスパッタリング用セラミックスターゲット
JPH07126842A (ja) * 1993-10-28 1995-05-16 Toshiba Corp 成膜装置
JPH09111445A (ja) * 1995-10-12 1997-04-28 Dainippon Printing Co Ltd スパッタリングターゲット
DE19819933A1 (de) * 1998-05-05 1999-11-11 Leybold Systems Gmbh Target für eine Kathodenzerstäubungsvorrichtung zur Herstellung dünner Schichten

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138361A (ja) * 1989-10-20 1991-06-12 Tokyo Electron Ltd スパッタ用ターゲット及びスパッタ方法
JPH0544028A (ja) * 1991-08-12 1993-02-23 Fujitsu Ltd スパツタ装置のターゲツト
JPH0616461U (ja) * 1992-01-29 1994-03-04 ライボルト アクチエンゲゼルシヤフト カソードスパッタリング装置用ターゲット
JPH05287524A (ja) * 1992-04-09 1993-11-02 Anelva Corp マグネトロンスパッタリング用ターゲット
JPH10195644A (ja) * 1996-08-23 1998-07-28 Applied Materials Inc スパッタチャンバ及びスッパタターゲット
JP2002517610A (ja) * 1998-06-01 2002-06-18 プラクスエアー エス ティー テクノロジー インコーポレーテッド 輪郭づけスパッタリングターゲット
JP2000129433A (ja) * 1998-10-28 2000-05-09 Mitsubishi Materials Corp 光磁気記録媒体膜形成用スパッタリングターゲット
JP2000204468A (ja) * 1999-01-08 2000-07-25 Tosoh Corp 多分割スパッタリングタ―ゲット
JP2000265270A (ja) * 1999-03-18 2000-09-26 Anelva Corp スパッタリング装置のマグネトロンカソード
JP2004083985A (ja) * 2002-08-26 2004-03-18 Mitsui Mining & Smelting Co Ltd スパッタリングターゲットおよびその製造方法
JP2004211202A (ja) * 2002-12-26 2004-07-29 Samsung Electronics Co Ltd スパッタリング用ターゲットとこれを含むスパッタチャンバー及びスパッタリング方法
WO2006054409A1 (ja) * 2004-11-17 2006-05-26 Nippon Mining & Metals Co., Ltd. スパッタリングターゲット、スパッタリングターゲット－バッキングプレート組立体及び成膜装置

Also Published As

Publication number Publication date
KR20120108981A (ko) 2012-10-05
KR101627012B1 (ko) 2016-06-03
WO2012101850A1 (ja) 2012-08-02
TWI510660B (zh) 2015-12-01
CN102791904A (zh) 2012-11-21
TW201231700A (en) 2012-08-01
JPWO2012101850A1 (ja) 2014-06-30
KR20140139140A (ko) 2014-12-04
CN102791904B (zh) 2015-06-17

Similar Documents

Publication Publication Date Title
JP4723668B2 (ja) ターゲットバッキングプレート組立体
KR20070063600A (ko) 스퍼터링 타겟, 스퍼터링 타겟 - 백킹 플레이트 조립체 및막 형성 장치
US9911526B2 (en) Magnet unit and magnetron sputtering apparatus
JP5364173B2 (ja) スパッタリングターゲット
JP5834783B2 (ja) マグネトロンスパッタ装置
JP2012241281A (ja) スパッタリング用分割ターゲット装置、及びそれを利用したスパッタリング方法
JP5447240B2 (ja) マグネトロンスパッタリング装置および透明導電膜の製造方法
JP2004211202A (ja) スパッタリング用ターゲットとこれを含むスパッタチャンバー及びスパッタリング方法
JP3760652B2 (ja) 多分割スパッタリングターゲット
KR20170117970A (ko) 스퍼터링 타깃-배킹 플레이트 접합체
JP2020517820A (ja) プロファイルされたスパッタリングターゲット及びその製造方法
JP2014129559A (ja) 多分割スパッタリングターゲットおよびその製造方法
TWI518196B (zh) Sputtering target
JP2011099162A (ja) 薄膜形成装置、薄膜の製造方法及び電子素子の製造方法
JP6764335B2 (ja) シリコンターゲット材
JP2004359982A (ja) Ｉｔｏスパッタリングターゲット及びその製造方法
JPWO2019039070A1 (ja) 成膜方法
JP5995811B2 (ja) 銅膜の成膜方法
KR20130031097A (ko) 스퍼터링 방법

Legal Events

Date Code Title Description
TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130820

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130906

R150 Certificate of patent or registration of utility model

Ref document number: 5364173

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250