JP5357639B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

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Publication number
JP5357639B2
JP5357639B2 JP2009149772A JP2009149772A JP5357639B2 JP 5357639 B2 JP5357639 B2 JP 5357639B2 JP 2009149772 A JP2009149772 A JP 2009149772A JP 2009149772 A JP2009149772 A JP 2009149772A JP 5357639 B2 JP5357639 B2 JP 5357639B2
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Prior art keywords
focus ring
ring
bias power
frequency bias
heat transfer
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Expired - Fee Related
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JP2009149772A
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Japanese (ja)
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JP2011009351A5 (enExample
JP2011009351A (ja
Inventor
賢治 前田
賢悦 横川
智行 田村
一幸 廣實
貴雅 一野
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2009149772A priority Critical patent/JP5357639B2/ja
Priority to US12/538,201 priority patent/US20100326957A1/en
Priority to KR1020090074177A priority patent/KR101066974B1/ko
Publication of JP2011009351A publication Critical patent/JP2011009351A/ja
Publication of JP2011009351A5 publication Critical patent/JP2011009351A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP2009149772A 2009-06-24 2009-06-24 プラズマ処理装置およびプラズマ処理方法 Expired - Fee Related JP5357639B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009149772A JP5357639B2 (ja) 2009-06-24 2009-06-24 プラズマ処理装置およびプラズマ処理方法
US12/538,201 US20100326957A1 (en) 2009-06-24 2009-08-10 Plasma processing apparatus and plasma processing method
KR1020090074177A KR101066974B1 (ko) 2009-06-24 2009-08-12 플라즈마처리장치 및 플라즈마처리방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009149772A JP5357639B2 (ja) 2009-06-24 2009-06-24 プラズマ処理装置およびプラズマ処理方法

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JP2011009351A JP2011009351A (ja) 2011-01-13
JP2011009351A5 JP2011009351A5 (enExample) 2012-07-05
JP5357639B2 true JP5357639B2 (ja) 2013-12-04

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US (1) US20100326957A1 (enExample)
JP (1) JP5357639B2 (enExample)
KR (1) KR101066974B1 (enExample)

Families Citing this family (121)

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Publication number Priority date Publication date Assignee Title
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
US8486221B2 (en) * 2009-02-05 2013-07-16 Tokyo Electron Limited Focus ring heating method, plasma etching apparatus, and plasma etching method
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
JP5732941B2 (ja) * 2011-03-16 2015-06-10 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP6085079B2 (ja) * 2011-03-28 2017-02-22 東京エレクトロン株式会社 パターン形成方法、処理容器内の部材の温度制御方法、及び基板処理システム
JP5822578B2 (ja) * 2011-07-20 2015-11-24 東京エレクトロン株式会社 載置台温度制御装置及び基板処理装置
US9947559B2 (en) * 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
US20130107415A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US9412579B2 (en) 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
CN103377979B (zh) 2012-04-30 2016-06-08 细美事有限公司 调节板和具有该调节板的用于处理基板的装置
KR101955575B1 (ko) 2012-06-08 2019-03-08 세메스 주식회사 기판처리장치 및 방법
KR101974420B1 (ko) 2012-06-08 2019-05-02 세메스 주식회사 기판처리장치 및 방법
KR101974422B1 (ko) 2012-06-27 2019-05-02 세메스 주식회사 기판처리장치 및 방법
JP5982206B2 (ja) * 2012-07-17 2016-08-31 東京エレクトロン株式会社 下部電極、及びプラズマ処理装置
US10557190B2 (en) * 2013-01-24 2020-02-11 Tokyo Electron Limited Substrate processing apparatus and susceptor
JP6100564B2 (ja) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 基板処理装置及び載置台
US9236305B2 (en) * 2013-01-25 2016-01-12 Applied Materials, Inc. Wafer dicing with etch chamber shield ring for film frame wafer applications
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP5971144B2 (ja) * 2013-02-06 2016-08-17 東京エレクトロン株式会社 基板処理装置及び成膜方法
KR102112368B1 (ko) 2013-02-28 2020-05-18 도쿄엘렉트론가부시키가이샤 탑재대 및 플라즈마 처리 장치
JP6173936B2 (ja) * 2013-02-28 2017-08-02 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6027492B2 (ja) * 2013-05-22 2016-11-16 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP6224366B2 (ja) * 2013-07-12 2017-11-01 東京エレクトロン株式会社 支持部材及び基板処理装置
JP6083529B2 (ja) * 2013-09-02 2017-02-22 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP6573325B2 (ja) * 2013-12-17 2019-09-11 東京エレクトロン株式会社 プラズマ密度を制御するシステムおよび方法
JP6442296B2 (ja) * 2014-06-24 2018-12-19 東京エレクトロン株式会社 載置台及びプラズマ処理装置
TWI603416B (zh) 2014-07-08 2017-10-21 瓦特洛威電子製造公司 具有接合層之整合溫度感測技術的接合總成
US9530626B2 (en) * 2014-07-25 2016-12-27 Tokyo Electron Limited Method and apparatus for ESC charge control for wafer clamping
CN104269370B (zh) * 2014-09-01 2017-05-17 上海华力微电子有限公司 改善晶圆边缘缺陷的装置
JP6149945B2 (ja) * 2014-09-30 2017-06-21 住友大阪セメント株式会社 静電チャック装置
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
JP5798677B2 (ja) * 2014-10-29 2015-10-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10109510B2 (en) * 2014-12-18 2018-10-23 Varian Semiconductor Equipment Associates, Inc. Apparatus for improving temperature uniformity of a workpiece
US9909197B2 (en) * 2014-12-22 2018-03-06 Semes Co., Ltd. Supporting unit and substrate treating apparatus including the same
JP6346855B2 (ja) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
JP6539113B2 (ja) 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
CN106856188B (zh) * 2015-12-08 2020-02-14 北京北方华创微电子装备有限公司 承载装置以及半导体加工设备
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10685862B2 (en) * 2016-01-22 2020-06-16 Applied Materials, Inc. Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
KR102604063B1 (ko) 2016-08-18 2023-11-21 삼성전자주식회사 정전 척 어셈블리 및 이를 포함하는 기판 처리 장치
US9922857B1 (en) 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
KR102581226B1 (ko) * 2016-12-23 2023-09-20 삼성전자주식회사 플라즈마 처리 장치
JP6340655B2 (ja) * 2017-01-10 2018-06-13 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP6869034B2 (ja) * 2017-01-17 2021-05-12 東京エレクトロン株式会社 プラズマ処理装置
WO2018183245A1 (en) * 2017-03-31 2018-10-04 Mattson Technology, Inc. Material deposition prevention on a workpiece in a process chamber
US10199252B2 (en) * 2017-06-30 2019-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal pad for etch rate uniformity
CN109216144B (zh) * 2017-07-03 2021-08-06 中微半导体设备(上海)股份有限公司 一种具有低频射频功率分布调节功能的等离子反应器
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
JP6518024B1 (ja) * 2017-10-30 2019-05-22 日本碍子株式会社 静電チャック及びその製法
JP7033441B2 (ja) * 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
JP7033907B2 (ja) * 2017-12-21 2022-03-11 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP7149068B2 (ja) 2017-12-21 2022-10-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
CN109994355B (zh) 2017-12-29 2021-11-02 中微半导体设备(上海)股份有限公司 一种具有低频射频功率分布调节功能的等离子反应器
WO2019143473A1 (en) * 2018-01-22 2019-07-25 Applied Materials, Inc. Processing with powered edge ring
JP7140183B2 (ja) * 2018-02-20 2022-09-21 住友大阪セメント株式会社 静電チャック装置および静電チャック装置の製造方法
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7204350B2 (ja) * 2018-06-12 2023-01-16 東京エレクトロン株式会社 載置台、基板処理装置及びエッジリング
US10847347B2 (en) * 2018-08-23 2020-11-24 Applied Materials, Inc. Edge ring assembly for a substrate support in a plasma processing chamber
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
JP7140610B2 (ja) * 2018-09-06 2022-09-21 株式会社日立ハイテク プラズマ処理装置
JP7175160B2 (ja) * 2018-11-05 2022-11-18 東京エレクトロン株式会社 基板処理装置
JP7145042B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
JP7145041B2 (ja) 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器、プラズマ処理装置、及びフォーカスリング
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7254542B2 (ja) * 2019-02-01 2023-04-10 東京エレクトロン株式会社 載置台及び基板処理装置
CN111801786B (zh) * 2019-02-08 2023-12-29 株式会社日立高新技术 等离子处理装置
JP2020155489A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
US11450545B2 (en) * 2019-04-17 2022-09-20 Samsung Electronics Co., Ltd. Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same
WO2020255319A1 (ja) 2019-06-20 2020-12-24 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102200315B1 (ko) * 2019-07-29 2021-01-08 세메스 주식회사 기판 지지 장치 및 이를 포함하는 기판 처리 장치
JP7394556B2 (ja) * 2019-08-09 2023-12-08 東京エレクトロン株式会社 載置台及び基板処理装置
JP7365815B2 (ja) * 2019-08-09 2023-10-20 東京エレクトロン株式会社 載置台及び基板処理装置
CN112435912B (zh) * 2019-08-26 2023-09-29 中微半导体设备(上海)股份有限公司 等离子体处理装置
KR102335472B1 (ko) * 2019-09-04 2021-12-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
JP7373963B2 (ja) * 2019-10-01 2023-11-06 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
US12266511B2 (en) 2019-11-26 2025-04-01 Tokyo Electron Limited Substrate support and substrate processing apparatus
JP7563843B2 (ja) * 2019-11-26 2024-10-08 東京エレクトロン株式会社 載置台及び基板処理装置
CN113348732B (zh) * 2019-12-18 2024-02-09 株式会社日立高新技术 等离子处理装置
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
KR102827753B1 (ko) * 2020-04-07 2025-07-02 삼성디스플레이 주식회사 표시 장치의 제조방법
KR102495233B1 (ko) * 2020-07-03 2023-02-06 주식회사 동원파츠 정전척
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
JP7598225B2 (ja) * 2020-11-09 2024-12-11 日本放送協会 接合用治具、および接合方法
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
CN114843165A (zh) * 2021-02-01 2022-08-02 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
JP7557429B2 (ja) * 2021-05-27 2024-09-27 東京エレクトロン株式会社 プラズマ処理装置
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
CN115565841B (zh) * 2021-07-02 2025-08-08 中微半导体设备(上海)股份有限公司 防止电弧放电的下电极组件、等离子体处理装置及方法
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
JPWO2023026908A1 (enExample) * 2021-08-27 2023-03-02
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
JP7496343B2 (ja) * 2021-11-08 2024-06-06 日本碍子株式会社 ウエハ載置台
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
WO2024075423A1 (ja) * 2022-10-07 2024-04-11 東京エレクトロン株式会社 基板処理システム及びエッジリングの取り付け方法
JP7670876B1 (ja) 2024-01-15 2025-04-30 日本特殊陶業株式会社 半導体基板処理用基台、セラミックス基材、および製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3066007B2 (ja) * 1998-06-24 2000-07-17 株式会社日立製作所 プラズマ処理装置およびプラズマ処理方法
JP2000183038A (ja) 1998-12-14 2000-06-30 Hitachi Ltd プラズマ処理装置
US20040261945A1 (en) * 2002-10-02 2004-12-30 Ensinger Kunststofftechnoligie Gbr Retaining ring for holding semiconductor wafers in a chemical mechanical polishing apparatus
JP4547182B2 (ja) * 2003-04-24 2010-09-22 東京エレクトロン株式会社 プラズマ処理装置
JP2006216822A (ja) 2005-02-04 2006-08-17 Hitachi High-Technologies Corp ウェハ処理装置およびウェハ処理方法
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
JP2006351887A (ja) * 2005-06-17 2006-12-28 Hitachi High-Technologies Corp プラズマ処理装置
JP4972327B2 (ja) 2006-03-22 2012-07-11 東京エレクトロン株式会社 プラズマ処理装置
JP2007258500A (ja) * 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
JP2008251866A (ja) * 2007-03-30 2008-10-16 Hitachi High-Technologies Corp プラズマ処理装置

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