JP5354538B2 - 金属酸化物および圧電材料 - Google Patents
金属酸化物および圧電材料 Download PDFInfo
- Publication number
- JP5354538B2 JP5354538B2 JP2009173542A JP2009173542A JP5354538B2 JP 5354538 B2 JP5354538 B2 JP 5354538B2 JP 2009173542 A JP2009173542 A JP 2009173542A JP 2009173542 A JP2009173542 A JP 2009173542A JP 5354538 B2 JP5354538 B2 JP 5354538B2
- Authority
- JP
- Japan
- Prior art keywords
- metal oxide
- piezoelectric
- piezoelectric material
- oxide according
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 101
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 44
- 150000004706 metal oxides Chemical class 0.000 title claims description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- 229910052742 iron Inorganic materials 0.000 claims abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 18
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 10
- 150000002602 lanthanoids Chemical class 0.000 claims description 10
- 238000000224 chemical solution deposition Methods 0.000 claims description 6
- 229910052769 Ytterbium Inorganic materials 0.000 abstract description 2
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 32
- 239000011701 zinc Substances 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 17
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 16
- 238000002441 X-ray diffraction Methods 0.000 description 14
- 238000005259 measurement Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- 230000010287 polarization Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000002775 capsule Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000005621 ferroelectricity Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- LZKLAOYSENRNKR-LNTINUHCSA-N iron;(z)-4-oxoniumylidenepent-2-en-2-olate Chemical compound [Fe].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O LZKLAOYSENRNKR-LNTINUHCSA-N 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- -1 organic acid salts Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- KKLCKMHYSAQCOF-UHFFFAOYSA-N manganese(2+);propan-1-olate Chemical compound [Mn+2].CCC[O-].CCC[O-] KKLCKMHYSAQCOF-UHFFFAOYSA-N 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000009768 microwave sintering Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- DRFVTYUXJVLNLR-UHFFFAOYSA-N tris(2-methylbutan-2-yloxy)bismuthane Chemical compound CCC(C)(C)O[Bi](OC(C)(C)CC)OC(C)(C)CC DRFVTYUXJVLNLR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2658—Other ferrites containing manganese or zinc, e.g. Mn-Zn ferrites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3272—Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/441—Alkoxides, e.g. methoxide, tert-butoxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/449—Organic acids, e.g. EDTA, citrate, acetate, oxalate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/765—Tetragonal symmetry
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/768—Perovskite structure ABO3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
しかしながら、PZTはAサイト元素として鉛を含有するために、環境に対する影響が問題視されている。このため、鉛を含有しないペロブスカイト型酸化物を用いた圧電材料の提案がなされている。
上記の課題を解決する圧電材料は、上記の金属酸化物を含むことを特徴とする。
さらに、本発明の金属酸化物および圧電材料は、鉛を使用していないために環境に対する影響がなく、またアルカリ金属を使用していないために、圧電素子に使用した際に、耐久性の面でも有利となる。
本発明は、圧電体としての性能に優れるBi系圧電体をベースとし、圧電特性の良好な新規の圧電材料を提供するものである。なお、本発明の圧電材料は、誘電体としての特性を利用してコンデンサ材料、メモリ材料、センサ材料として用いる等、さまざまな用途に利用できる。
本発明に係る金属酸化物は、下記一般式(1)で表されるペロブスカイト型酸化物からなることを特徴とする。
ペロブスカイト型酸化物は、一般にABO3の化学式で表現される。ペロブスカイト型酸化物において、元素A、Bは各々イオンの形でAサイト、Bサイトと呼ばれる単位結晶格子の特定の位置を占める。例えば、立方晶系の単位結晶格子であれば、A元素は立方体の頂点、B元素は体心に位置する。O元素は酸素の陰イオンとして面心位置を占める。
ZnとTiの比率を示すxのもっとも好ましい値は0.5である。Znが2価、Tiが4価の陽イオンとして結晶格子内に存在しているとすると、xが0.5の時に電荷のバランスが取れているため、酸化物全体の絶縁性が高まる。ただし、Bサイト元素やドーパントの種類によって、絶縁性を高める目的でxは0.4から0.6の範囲で変化させても良い。
一般に、ペロブスカイト型酸化物ABO3の結晶構造は、寛容因子(Tolerance factor)と相関がある。寛容因子tは、下記数式(1)で定義されるパラメータである。
上記yの範囲が好ましい範囲であるのは、係る範囲内に組成相境界が存在するためである。このことは第一原理計算と呼ばれる電子状態計算の結果からも示される。以下、電子状態計算の概要及び結果を説明する。
前記一般式(1)のAはBi元素のみ、または、Bi元素に加えて3価のランタノイドから選択される1種以上の元素も含んでいることが好ましい。
AがBi元素のみであると、Aサイト元素とO元素より構成されるペロブスカイト骨格の対称性が高くなって圧電材料の外部刺激に対する安定性が向上する。また、Bi元素特有の強固な結合のために圧電材料のキュリー温度を高くしたり内部分極の変動幅を大きくしたりする効果が得られる。
本発明の圧電材料において望ましいキュリー温度は、200℃以上600℃未満、より好ましくは200℃以上500℃以下である。キュリー温度が200℃以上である事により、デバイス化した場合に、温度による特性変動の少ない材料を提供出来る。また、キュリー温度が600℃以下である事により、素子化の際の分極処理が容易である材料を提供することができる。
更にMはMn元素を0.1モル%以上5モル%以下含む、特に0.1モル%以上1モル%以下含むことが好ましい。
また、本発明の圧電材料にMnを含有させる場合に用いる原料は、2価のMnであっても良いし、4価のMnであっても良い。Mn元素はペロブスカイト構造のBサイトに含まれているだけでなく、結晶粒界に酸化物として含まれていても同様の効果を期待できる。
圧電材料の膜厚を200nm以上10μm以下とすることで圧電素子として充分な電気機械変換機能を得られるとともに、圧電素子の高密度化を期待できる。
特定面に配向した単結晶基板を用いることで、その基板表面に設けられた膜状の圧電材料も同一方位に強く配向させることができる。圧電材料が(001)面または(111)面に配向していると、膜の垂直方向に分極のモーメントが揃うために圧電効果の向上が見込める。
本発明において、「バルク体」という用語は圧電材料の形状を表現するために用いており、粉末が集合した塊状物を意図している。前記膜状の圧電材料よりも容積や重量に対する比表面積が小さい。複数層の圧電材料と内部電極を積み重ねた積層タイプの圧電材料も本発明の中ではバルク体として取扱う。
前記バルク体の製造方法は特に制限されない。例えば、原料粉体を常圧下で焼結する一般的なセラミック製造方法を採用することができる。
以下では、まずバルク体としての本発明の圧電材料について(実施例1から13)順をおって説明する。
酸化物原料として、Bi2O3、ZnO、TiO2、Fe2O3、Al2O3を表1に示す目的組成と同じモル比で秤量し、混合、粉砕を行った。作製した粉末を白金製のカプセルに封入して、そのカプセルを立方体アンビル型高圧発生装置により6GPaまで加圧した。加圧状態のままカプセルを1100℃で加熱し、この温度で30分間保持した。その後、カプセルを急冷し、圧力を取り除き、試料を取り出して、本発明の圧電材料を得た。
酸化物原料として、Bi2O3、ZnO、TiO2、Fe2O3、La2O3、MnO、Al2O3を表1に示す目的組成と同じモル比で秤量し、混合、粉砕を行った。作製した粉末にバインダーとしてPVB(ポリビニルブチラール)を10wt%加えて、乳鉢で混合した。これを10mm径の円形ディスク状に成型して、700℃の電気炉で2時間仮焼した。続けて、1100℃から1350℃の電気炉で2時間の本焼成を行って、本発明の圧電材料を得た。
これらのディスク状圧電材料の両面を研磨し、銀ペーストで電極を設けて電気測定に用いた。結果を表1に組成と共に示す。表1に記載のキュリー温度および誘電率、誘電損失は、実施例1と同様にして特定した。
つづいて、実施例14から23において膜状圧電材料の作製例を前駆体溶液の製造例から順を追って説明する。
前駆体溶液の原料として、トリ−t−アミロキシビスマス(Bi(O・t−Am)3)、酢酸亜鉛二水和物(Zn(OAc)2・2H2O)、テトラ−n−ブトキシチタン(Ti(O・n−Bu)4)、鉄アセチルアセトナート(Fe(acac)3)、トリ−sec−ブトキシアルミニウムAl2O3(Al(O・sec−Bu)4)、トリ−i−プロポキシランタン(La(O・i−Pr)3)、ジ−i−プロポキシマンガン(II)(Mn(O・i−Pr)2)を用いた。
酢酸亜鉛二水和物を用いる系については、亜鉛成分の溶解性を補助する目的で等モルのモノエタノールアミンを加えた。
いずれの溶液も濃度0.1mol/Lとなるように2−メトキシエタノールを適量加えて実施例14から23に用いる塗布溶液とした。
薄膜を形成する基板として、導電性で(111)配向のニオブドープチタン酸ストロンチウム単結晶基板を用いた。
これらの薄膜状圧電材料の表面に100μmφの白金電極をスパッタリング法で設けて、電気測定に用いた。結果を表2に組成と共に示す。
本発明との比較のために金属酸化物材料を作製した。
実施例1と同様にして、表1に示す目的組成の金属酸化物を高圧合成法により作製した。
比較例3の組成はBiFeO3であり、X線回折測定から菱面体晶のペロブスカイト構造であることがわかった。
比較例2、3の圧電材料の圧電歪みを実施例4と同様にして観測したが、測定精度の限界値である0.01%以上の歪みは確認できなかった。
実施例14と同様にして、表2に示す目的組成の金属酸化物膜を化学溶液堆積法により作製した。
比較例5の組成はBiFeO3であり、X線回折測定から菱面体晶のペロブスカイト構造であることがわかった。
Claims (14)
- 前記AがBi元素のみよりなることを特徴とする請求項1記載の金属酸化物。
- 前記AがBi元素に加えて3価のランタノイドから選択される1種以上の元素も含むことを特徴とする請求項1記載の金属酸化物。
- 前記Aに含まれる元素がLa元素である請求項3記載の金属酸化物。
- 前記Aにおいて前記Bi元素の占める比率が70モル%以上99.9モル%以下である請求項3または4記載の金属酸化物。
- 前記MがFe、Alの少なくとも一方あるいは両者の元素よりなる請求項1乃至5のいずれかの項に記載の金属酸化物。
- 前記MにMn元素を0.1モル%以上5モル%以下含む請求項6記載の金属酸化物。
- 前記yの範囲が0.2≦y≦0.65である請求項1乃至7のいずれかの項に記載の金属酸化物。
- 前記金属酸化物が、基板上に設けられた厚み200nm以上10μm以下の膜であることを特徴とする請求項1乃至8のいずれかの項に記載の金属酸化物。
- 前記金属酸化物は、化学溶液堆積法により形成された膜であるであることを特徴とする請求項9記載の金属酸化物。
- 前記基板が(001)面または(111)面に選択的に配向した単結晶基板である請求項9または10に記載の金属酸化物。
- 前記圧電材料が膜状であり、かつ前記yの範囲が0.2≦y≦0.35である請求項9乃至11のいずれかの項に記載の金属酸化物。
- 前記金属酸化物がバルク体であり、かつ前記yの範囲が0.35≦y≦0.65である請求項1乃至8のいずれかの項に記載の金属酸化物。
- 請求項1乃至13のいずれかに記載の金属酸化物を含むことを特徴とする圧電材料。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009173542A JP5354538B2 (ja) | 2008-07-30 | 2009-07-24 | 金属酸化物および圧電材料 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008196903 | 2008-07-30 | ||
JP2008196903 | 2008-07-30 | ||
JP2009173542A JP5354538B2 (ja) | 2008-07-30 | 2009-07-24 | 金属酸化物および圧電材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010053024A JP2010053024A (ja) | 2010-03-11 |
JP5354538B2 true JP5354538B2 (ja) | 2013-11-27 |
Family
ID=41607382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009173542A Active JP5354538B2 (ja) | 2008-07-30 | 2009-07-24 | 金属酸化物および圧電材料 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8529785B2 (ja) |
JP (1) | JP5354538B2 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5355148B2 (ja) * | 2008-03-19 | 2013-11-27 | キヤノン株式会社 | 圧電材料 |
JP5219921B2 (ja) * | 2008-05-28 | 2013-06-26 | キヤノン株式会社 | 金属酸化物、圧電材料および圧電素子 |
JP5354538B2 (ja) * | 2008-07-30 | 2013-11-27 | キヤノン株式会社 | 金属酸化物および圧電材料 |
JP2010143788A (ja) * | 2008-12-18 | 2010-07-01 | Canon Inc | 酸窒化物圧電材料及びその製造方法 |
JP5599185B2 (ja) * | 2009-01-07 | 2014-10-01 | キヤノン株式会社 | 圧電材料および圧電素子 |
US8216858B2 (en) * | 2009-02-18 | 2012-07-10 | Canon Kabushiki Kaisha | Ferroelectric material, method of producing ferroelectric material, and ferroelectric device |
KR101318516B1 (ko) | 2009-03-31 | 2013-10-16 | 고쿠리츠다이가쿠호징 야마나시다이가쿠 | 세라믹, 압전 소자 및 그의 제조 방법 |
US20110079883A1 (en) * | 2009-10-01 | 2011-04-07 | Canon Kabushiki Kaisha | Ferroelectric thin film |
JP5832091B2 (ja) * | 2010-03-02 | 2015-12-16 | キヤノン株式会社 | 圧電材料、圧電素子、液体吐出ヘッドおよび超音波モータ |
JP5885931B2 (ja) * | 2010-03-15 | 2016-03-16 | キヤノン株式会社 | ビスマス鉄酸化物粉体、その製造方法、誘電体セラミックス、圧電素子、液体吐出ヘッドおよび超音波モータ |
JP5751407B2 (ja) * | 2011-01-19 | 2015-07-22 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波センサー及び赤外線センサー |
JP5765525B2 (ja) * | 2011-02-10 | 2015-08-19 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波デバイス及びirセンサー |
JP5825466B2 (ja) * | 2011-02-24 | 2015-12-02 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 |
US9022531B2 (en) | 2012-02-28 | 2015-05-05 | Canon Kabushiki Kaisha | Piezoelectric element, liquid discharge head and liquid discharge apparatus |
JP5550123B2 (ja) * | 2012-05-15 | 2014-07-16 | 太陽誘電株式会社 | 圧電セラミックス及びその製造方法 |
US9343650B2 (en) | 2013-03-29 | 2016-05-17 | Fuji Chemical Co., Ltd. | Piezoelectric material, piezoelectric element, multilayered piezoelectric element, liquid ejection head, liquid ejection apparatus, ultrasonic motor, optical equipment, vibration apparatus, dust removing apparatus, imaging apparatus, and electronic equipment |
US9780294B2 (en) * | 2013-11-13 | 2017-10-03 | Tdk Corporation | Piezoelectric composition and piezoelectric element |
JP2015137194A (ja) | 2014-01-21 | 2015-07-30 | エプコス アクチエンゲゼルシャフトEpcos Ag | 誘電体磁器組成物、誘電体素子、電子部品および積層電子部品 |
JP2015137193A (ja) * | 2014-01-21 | 2015-07-30 | エプコス アクチエンゲゼルシャフトEpcos Ag | 誘電体磁器組成物、誘電体素子、電子部品および積層電子部品 |
CN104402426B (zh) * | 2014-11-26 | 2016-08-24 | 上海大学 | 一种铁酸铋-钛酸铅-铌锌酸铅(bf-pt-pzn)三元体系高温压电陶瓷 |
US9887347B2 (en) | 2015-11-27 | 2018-02-06 | Canon Kabushiki Kaisha | Piezoelectric element, piezoelectric actuator and electronic instrument using the same |
US10424722B2 (en) | 2015-11-27 | 2019-09-24 | Canon Kabushiki Kaisha | Piezoelectric element, piezoelectric actuator, and electronic apparatus |
US9917245B2 (en) | 2015-11-27 | 2018-03-13 | Canon Kabushiki Kaisha | Piezoelectric element, method of manufacturing piezoelectric element, piezoelectric actuator, and electronic apparatus |
US9893268B2 (en) | 2015-11-27 | 2018-02-13 | Canon Kabushiki Kaisha | Piezoelectric element, piezoelectric actuator, and electronic apparatus using the same |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04300213A (ja) * | 1991-03-27 | 1992-10-23 | Ube Ind Ltd | アモルファス強誘電体酸化物材料 |
JPH10120494A (ja) * | 1996-10-22 | 1998-05-12 | Fuji Xerox Co Ltd | 強誘電体薄膜の製造方法 |
JP4203554B2 (ja) * | 2002-08-30 | 2009-01-07 | 住友大阪セメント株式会社 | 光電変換素子及びその製造方法 |
TWI228493B (en) | 2002-12-18 | 2005-03-01 | Showa Denko Kk | Barium titanate and electronic parts using the same |
CN100335415C (zh) | 2003-02-28 | 2007-09-05 | 新加坡纳米材料科技有限公司 | 一种制备各种晶态钙钛矿类化合物粉体的方法 |
JP3873935B2 (ja) * | 2003-06-18 | 2007-01-31 | セイコーエプソン株式会社 | 強誘電体メモリ素子 |
JP5035504B2 (ja) | 2006-04-12 | 2012-09-26 | セイコーエプソン株式会社 | インクジェット式記録ヘッドおよびインクジェットプリンタ |
US7525239B2 (en) * | 2006-09-15 | 2009-04-28 | Canon Kabushiki Kaisha | Piezoelectric element, and liquid jet head and ultrasonic motor using the piezoelectric element |
US8114307B2 (en) * | 2006-09-15 | 2012-02-14 | Canon Kabushiki Kaisha | Piezoelectric body and liquid discharge head |
JP5538670B2 (ja) * | 2006-09-15 | 2014-07-02 | キヤノン株式会社 | 圧電体素子、これを用いた液体吐出ヘッド及び超音波モーター |
KR100945379B1 (ko) * | 2008-02-26 | 2010-03-08 | 창원대학교 산학협력단 | 페로브스카이트 첨가물을 이용한 BiFeO₃세라믹스의조성물 및 그 제조방법 |
JP5355148B2 (ja) * | 2008-03-19 | 2013-11-27 | キヤノン株式会社 | 圧電材料 |
JP5219921B2 (ja) | 2008-05-28 | 2013-06-26 | キヤノン株式会社 | 金属酸化物、圧電材料および圧電素子 |
JP5313792B2 (ja) | 2008-07-17 | 2013-10-09 | 富士フイルム株式会社 | ペロブスカイト型酸化物、酸化物組成物、酸化物体、圧電素子、及び液体吐出装置 |
JP5354538B2 (ja) * | 2008-07-30 | 2013-11-27 | キヤノン株式会社 | 金属酸化物および圧電材料 |
US8518290B2 (en) | 2008-07-30 | 2013-08-27 | Canon Kabushiki Kaisha | Piezoelectric material |
JP5414433B2 (ja) | 2008-09-30 | 2014-02-12 | キヤノン株式会社 | 強誘電セラミック材料 |
JP2010143788A (ja) | 2008-12-18 | 2010-07-01 | Canon Inc | 酸窒化物圧電材料及びその製造方法 |
JP2010143789A (ja) | 2008-12-18 | 2010-07-01 | Canon Inc | 圧電体材料 |
JP5599185B2 (ja) * | 2009-01-07 | 2014-10-01 | キヤノン株式会社 | 圧電材料および圧電素子 |
US8216858B2 (en) | 2009-02-18 | 2012-07-10 | Canon Kabushiki Kaisha | Ferroelectric material, method of producing ferroelectric material, and ferroelectric device |
US20110079883A1 (en) | 2009-10-01 | 2011-04-07 | Canon Kabushiki Kaisha | Ferroelectric thin film |
-
2009
- 2009-07-24 JP JP2009173542A patent/JP5354538B2/ja active Active
- 2009-07-24 US US12/508,968 patent/US8529785B2/en active Active
-
2013
- 2013-08-05 US US13/959,251 patent/US9543501B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2010053024A (ja) | 2010-03-11 |
US20130330541A1 (en) | 2013-12-12 |
US9543501B2 (en) | 2017-01-10 |
US20100025617A1 (en) | 2010-02-04 |
US8529785B2 (en) | 2013-09-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5354538B2 (ja) | 金属酸化物および圧電材料 | |
JP5599185B2 (ja) | 圧電材料および圧電素子 | |
US8034250B2 (en) | Piezoelectric material | |
JP5832091B2 (ja) | 圧電材料、圧電素子、液体吐出ヘッドおよび超音波モータ | |
US9362482B2 (en) | Method of producing piezoelectric device using Be, Fe and Co under excess oxygen atmosphere | |
JP6176942B2 (ja) | 圧電素子、液体吐出ヘッドおよび液体吐出装置 | |
US20100155647A1 (en) | Oxynitride piezoelectric material and method of producing the same | |
WO2006095716A1 (ja) | 圧電/電歪磁器組成物及びその製造方法 | |
IL224426A (en) | Lead-free ceramics | |
JP2004300019A (ja) | 結晶配向セラミックス及びその製造方法 | |
JP6398771B2 (ja) | 圧電組成物および圧電素子 | |
JP5876974B2 (ja) | 圧電/電歪磁器組成物の製造方法 | |
JPH10139552A (ja) | 結晶配向セラミックス及びその製造方法 | |
JP6323305B2 (ja) | 圧電組成物および圧電素子 | |
Hong et al. | Effect of LiBiO2 on low-temperature sintering of PZT-PZNN ceramics | |
JP5233778B2 (ja) | 異方形状粉末及び結晶配向セラミックスの製造方法 | |
CN104817320A (zh) | 压电组合物和压电元件 | |
JP5774824B2 (ja) | 圧電/電歪磁器組成物 | |
JP3666179B2 (ja) | 結晶配向セラミックス及びその製造方法 | |
JP2011201741A (ja) | 圧電/電歪セラミックス、圧電/電歪セラミックスの製造方法、圧電/電歪素子及び圧電/電歪素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20100629 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100806 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100806 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100831 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101227 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120718 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20120914 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20120914 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130719 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130723 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130820 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5354538 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |