JP5550123B2 - 圧電セラミックス及びその製造方法 - Google Patents
圧電セラミックス及びその製造方法 Download PDFInfo
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- JP5550123B2 JP5550123B2 JP2012111877A JP2012111877A JP5550123B2 JP 5550123 B2 JP5550123 B2 JP 5550123B2 JP 2012111877 A JP2012111877 A JP 2012111877A JP 2012111877 A JP2012111877 A JP 2012111877A JP 5550123 B2 JP5550123 B2 JP 5550123B2
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- Prior art keywords
- piezoelectric
- piezoelectric ceramic
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- tungsten bronze
- phase
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- 239000000919 ceramic Substances 0.000 title claims description 130
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229910052721 tungsten Inorganic materials 0.000 claims description 81
- 239000010937 tungsten Substances 0.000 claims description 81
- 239000013078 crystal Substances 0.000 claims description 35
- 239000000843 powder Substances 0.000 claims description 34
- 230000008859 change Effects 0.000 claims description 25
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 22
- 230000007704 transition Effects 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 18
- 238000005245 sintering Methods 0.000 claims description 18
- 239000011812 mixed powder Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 3
- 239000000523 sample Substances 0.000 description 100
- 229910000906 Bronze Inorganic materials 0.000 description 68
- 239000010974 bronze Substances 0.000 description 68
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 68
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 68
- 238000000034 method Methods 0.000 description 33
- 230000008878 coupling Effects 0.000 description 21
- 238000010168 coupling process Methods 0.000 description 21
- 238000005859 coupling reaction Methods 0.000 description 21
- 239000012535 impurity Substances 0.000 description 18
- 238000002156 mixing Methods 0.000 description 12
- 239000002002 slurry Substances 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000004809 Teflon Substances 0.000 description 5
- 229920006362 Teflon® Polymers 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H10N30/093—Forming inorganic materials
- H10N30/097—Forming inorganic materials by sintering
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- Engineering & Computer Science (AREA)
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- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
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- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Description
上記混合粉末は、磁場を印加することにより上記結晶に配向性が付与された成形体とされる。
上記成形体は、焼結させられることにより、上記結晶におけるc軸の配向度がロットゲーリングファクターで60%以上の焼結体とされる。
この圧電セラミックスは温度特性に優れる。
この圧電セラミックスはハイパワー駆動が可能である。なお、「振動速度」には「共振周波数における振動速度の実効値」を用い、その単位(m/s rms)を便宜上(m/s)と示すこととする。
上記混合粉末は、磁場を印加することにより上記結晶に配向性が付与された成形体とされる。
上記成形体は、焼結させられることにより、上記結晶におけるc軸の配向度がロットゲーリングファクターで60%以上の焼結体とされる。
この製造方法によれば、温度特性に優れ、かつ、ハイパワー駆動が可能な圧電セラミックスを提供可能である。
本実施形態に係る非鉛系圧電セラミックスは、100[(Sr2−xCax)1+y/4Na1−yNb5−2/5zMnzO15]+αSiO2(式中、0≦x<0.3、0.1<y<0.6、0<z<0.1、1<α<8である)の組成式で表される。この圧電セラミックスは、タングステンブロンズ構造である(Sr2−xCax)1+y/4Na1−yNb5−2/5zMnzO15の多結晶相(以下、「タングステンブロンズ相」という。)に対し、SiO2相が均一に分散した構成を有している。
本実施形態ではタングステンブロンズ相の組成式を(Sr2−xCax)1+y/4Na1−yNb5−2/5zMnzO15とし、x、y、zの条件を、それぞれ0≦x<0.3、0.1<y<0.6、0<z<0.1とした。
本実施形態では、(Sr2−xCax)1+y/4Na1−yNb5−2/5zMnzO15(0≦x<0.3、0.1<y<0.6、0<z<0.1)のタングステンブロンズ相100モルに対してSiO2粉末をαモル添加する。本実施形態では、αの条件を1<α<8とした。
図2は本実施形態に係る圧電セラミックスの製造プロセスの概略構成を示したフローチャートである。以下に、図2を参照して本実施形態に係る圧電セラミックスの製造プロセスの概略構成について説明するが、セラミックスの製造プロセスに一般的に用いられる構成と共通する部分ついてはその説明を適宜省略し、本技術特有の構成については後に詳述する。
タングステンブロンズ構造は、結晶異方性があることが知られている。本実施形態に係る圧電セラミックスでは、タングステンブロンズ相がc軸配向している。
本実施形態に係る圧電セラミックスの製造プロセスには、タングステンブロンズ相をc軸配向させるためのプロセスを含む。具体的には、以下の方法によりタングステンブロンズ相をc軸配向させる。
本実施形態で採用する強磁場法は、誘電セラミックスや圧電セラミックスの有する微弱な磁気異方性を利用し、セラミックスの結晶粒を配向させる(結晶粒の向きを揃える)一般的な方法である。当該方法は、図2に示す製造プロセスにおけるバインダ混合工程(S7)、成形工程(S8)、に関わる。
タングステンブロンズ相の結晶異方性を利用した塑性加工法によっても、タングステンブロンズ相をc軸配向させることが可能である。そのような塑性加工法としては、例えば、ホットフォージ法や押出し法が挙げられる。
本実施形態に係る圧電セラミックスでは、タングステンブロンズ相のc軸の配向度がロットゲーリングファクターfで60%以上である。ロットゲーリングファクターfはロットゲーリング法によって算出される値である。ロットゲーリング法は、XRD法における反射強度データ(スペクトル)を用いて配向度を評価する方法である。c軸配向セラミックスを評価する場合には、c軸に直交する全ての面(00l)における反射強度の合計を評価する。
P0=ΣI0(00l)/ΣI0(hkl) …(1)
P=ΣI(00l)/ΣI(hkl) …(2)
f=100×(P−P0)/(1−P0) …(3)
各セラミックスの強弾性相転移温度は、その誘電率の温度特性によって評価した。誘電率の温度特性の評価には後述のインピーダンスアナライザーを用い、周波数の条件を1kHzとした。詳細には、各セラミックスの誘電率の温度特性は、強弾性相転移温度において変曲点を示し、その温度を強弾性相転移温度とした。なお、強弾性転移温度は、誘電率の温度特性によらずとも、示差走査熱量測定などの一般的に用いられる方法によって評価してもよい。これらの場合にも、強弾性転移温度として、誘電率の温度特性による評価と同様の結果が得られる。
(圧電定数d及び電気機械結合係数kの温度特性)
まず、圧電セラミックスの性能の指標として重要な圧電定数dと電気機械結合係数kについて評価した。圧電定数dは機械的効果と電気的効果を結びつける係数である。電気機械結合係数kは、電気的と機械的との変換能力を表す係数で、生じた機械的エネルギと与えた電気的エネルギの比の平方根、又はこれとは反対に、生じた電気的エネルギと与えた機械的エネルギの比の平方根で定義される。
Δk31=100×(k31(MAX)―k31(25℃))/k31(25℃) …(5)
Δk33=100×(k33(MAX)―k33(25℃))/k33(25℃) …(7)
次に、ハイパワー駆動特性を評価した。ハイパワー駆動特性の評価にも、圧電定数d及び電気機械結合係数kを評価する際に用いたサンプルと同様の矩形板状(長さ12mm×幅3mm×厚さ1mm)のサンプルを用いた。なお、サンプルの振動速度には共振周波数における実効値を用い、その単位(m/s rms)を便宜上(m/s)とした。
ΔQ=100×(Qe−Qi)/Qi …(8)
Δf=100×(fe−fi)/fi …(9)
S…SiO2相
Claims (11)
- 100[(Sr2−xCax)1+y/4Na1−yNb5−2/5zMnzO15]+αSiO2(式中、0≦x<0.3、0.1<y<0.6、0<z<0.1、1<α<8である)の組成式で表され、タングステンブロンズ構造の多結晶からなり、当該多結晶のc軸の配向度がロットゲーリングファクターで60%以上である圧電セラミックス。
- 100[(Sr2−xCax)1+y/4Na1−yNb5−2/5zMnzO15]+αSiO2(式中、0≦x<0.3、0.1<y<0.6、0<z<0.1、1<α<8である)の組成式で表され、タングステンブロンズ構造の多結晶からなり、当該多結晶の強弾性相転移温度が50℃以上である圧電セラミックス。
- 請求項1又は2に記載の圧電セラミックスであって、
―40℃以上150℃以下における圧電定数d31の、25℃における値に対する変化率が40%以下である
圧電セラミックス。 - 請求項1から3のいずれか1項に記載の圧電セラミックスであって、
―40℃以上150℃以下における電気機械係数k31の、25℃における値に対する変化率が70%以下である
圧電セラミックス。 - 請求項1から4のいずれか1項に記載の圧電セラミックスであって、
―40℃以上150℃以下における圧電定数d33の、25℃における値に対する変化率が60%以下である
圧電セラミックス。 - 請求項1から5のいずれか1項に記載の圧電セラミックスであって、
―40℃以上150℃以下における電気機械係数k33の、25℃における値に対する変化率が30%以下である
圧電セラミックス。 - 請求項1から6のいずれか1項に記載の圧電セラミックスであって、
振動速度が0.62m/sに達するまでの最大温度上昇量が8℃以下である
圧電セラミックス。 - 請求項1から7のいずれか1項に記載の圧電セラミックスであって、
最大振動速度が1.6m/s以上である
圧電セラミックス。 - 請求項1から8のいずれか1項に記載の圧電セラミックスであって、
駆動可能な振動速度の範囲内において機械的品質係数Qの変化率が8%以下である
圧電セラミックス。 - 請求項1から9のいずれか1項に記載の圧電セラミックスであって、
駆動可能な振動速度の範囲内において共振周波数の最大値と最小値の差が最小値に対して0.08%以下である
圧電セラミックス。 - (Sr2−xCax)1+y/4Na1−yNb5−2/5zMnzO15(式中、0≦x<0.3、0.1<y<0.6、0<z<0.1である。)の組成式で表されるタングステンブロンズ構造の結晶からなる粉末に、当該粉末100モルに対してαモル(1<α<8)の割合でSiO2粉末が混合してなる混合粉末を作製し、
磁場を印加することにより前記結晶に配向性が付与した前記混合粉末の成形体を作製し、
前記成形体を焼結させることにより、前記結晶におけるc軸の配向度がロットゲーリングファクターで60%以上の焼結体を作製する
圧電セラミックスの製造方法。
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