JP5353190B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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Publication number
JP5353190B2
JP5353190B2 JP2008283546A JP2008283546A JP5353190B2 JP 5353190 B2 JP5353190 B2 JP 5353190B2 JP 2008283546 A JP2008283546 A JP 2008283546A JP 2008283546 A JP2008283546 A JP 2008283546A JP 5353190 B2 JP5353190 B2 JP 5353190B2
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trench
semiconductor device
diffusion region
diffusion
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Japanese (ja)
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JP2010114152A5 (enrdf_load_stackoverflow
JP2010114152A (ja
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秀史 高谷
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Toyota Motor Corp
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Toyota Motor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008283546A 2008-11-04 2008-11-04 半導体装置および半導体装置の製造方法 Active JP5353190B2 (ja)

Priority Applications (1)

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JP2008283546A JP5353190B2 (ja) 2008-11-04 2008-11-04 半導体装置および半導体装置の製造方法

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JP2008283546A JP5353190B2 (ja) 2008-11-04 2008-11-04 半導体装置および半導体装置の製造方法

Publications (3)

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JP2010114152A JP2010114152A (ja) 2010-05-20
JP2010114152A5 JP2010114152A5 (enrdf_load_stackoverflow) 2011-06-16
JP5353190B2 true JP5353190B2 (ja) 2013-11-27

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5531787B2 (ja) * 2010-05-31 2014-06-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5537359B2 (ja) 2010-09-15 2014-07-02 株式会社東芝 半導体装置
JP5480084B2 (ja) 2010-09-24 2014-04-23 株式会社東芝 半導体装置
DE112011104322T5 (de) 2010-12-10 2013-10-02 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
KR101439310B1 (ko) 2012-11-21 2014-09-11 도요타 지도샤（주） 반도체 장치
JP6208579B2 (ja) 2013-12-26 2017-10-04 トヨタ自動車株式会社 半導体装置
JP6169966B2 (ja) 2013-12-26 2017-07-26 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6266975B2 (ja) * 2013-12-26 2018-01-24 トヨタ自動車株式会社 絶縁ゲート型半導体装置の製造方法及び絶縁ゲート型半導体装置
WO2016052203A1 (ja) 2014-09-30 2016-04-07 三菱電機株式会社 半導体装置
JP6560142B2 (ja) * 2016-02-26 2019-08-14 トヨタ自動車株式会社 スイッチング素子
JP6560141B2 (ja) * 2016-02-26 2019-08-14 トヨタ自動車株式会社 スイッチング素子
JP2019096631A (ja) * 2016-04-07 2019-06-20 三菱電機株式会社 半導体装置および電力変換装置
JP6750300B2 (ja) 2016-05-16 2020-09-02 富士電機株式会社 半導体装置および半導体装置の製造方法
US11355629B2 (en) * 2017-03-07 2022-06-07 Mitsubishi Electric Corporation Semiconductor device and power converter
JP7151363B2 (ja) * 2018-10-16 2022-10-12 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7559393B2 (ja) * 2020-07-16 2024-10-02 富士電機株式会社 半導体装置
US20220069073A1 (en) * 2020-08-28 2022-03-03 Nanjing Zizhu Microelectronics Co., Ltd. Integrated circuit system with super junction transistor mechanism and method of manufacture thereof
CN115084223A (zh) * 2022-05-17 2022-09-20 华虹半导体(无锡)有限公司 超结沟槽栅mosfet器件结构及其工艺方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4738562B2 (ja) * 2000-03-15 2011-08-03 三菱電機株式会社 半導体装置の製造方法
JP2002368220A (ja) * 2001-06-04 2002-12-20 Hitachi Ltd 半導体装置及びこれを用いた電源システム
JP4178789B2 (ja) * 2001-12-18 2008-11-12 富士電機デバイステクノロジー株式会社 半導体装置およびその製造方法
JP4892172B2 (ja) * 2003-08-04 2012-03-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP1959495B1 (en) * 2005-11-22 2017-09-20 Shindengen Electric Manufacturing Co., Ltd. Trench gate power semiconductor device
JP4915221B2 (ja) * 2006-11-28 2012-04-11 トヨタ自動車株式会社 半導体装置

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