JP5348885B2 - 圧電/電歪磁器組成物及びその製造方法 - Google Patents
圧電/電歪磁器組成物及びその製造方法 Download PDFInfo
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- JP5348885B2 JP5348885B2 JP2007507117A JP2007507117A JP5348885B2 JP 5348885 B2 JP5348885 B2 JP 5348885B2 JP 2007507117 A JP2007507117 A JP 2007507117A JP 2007507117 A JP2007507117 A JP 2007507117A JP 5348885 B2 JP5348885 B2 JP 5348885B2
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- 239000000203 mixture Substances 0.000 title claims description 146
- 229910052573 porcelain Inorganic materials 0.000 title claims description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910052783 alkali metal Inorganic materials 0.000 claims description 44
- 229910052715 tantalum Inorganic materials 0.000 claims description 38
- 229910052758 niobium Inorganic materials 0.000 claims description 32
- 150000001340 alkali metals Chemical class 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 30
- 239000000919 ceramic Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 229910052787 antimony Inorganic materials 0.000 claims description 22
- 238000010304 firing Methods 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 229910052723 transition metal Inorganic materials 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229910052700 potassium Inorganic materials 0.000 claims description 11
- 229910052744 lithium Inorganic materials 0.000 claims description 7
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- 239000002585 base Substances 0.000 claims description 3
- 239000010955 niobium Substances 0.000 description 38
- 230000005684 electric field Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 238000006073 displacement reaction Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 9
- 229910001928 zirconium oxide Inorganic materials 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 238000005452 bending Methods 0.000 description 5
- 238000001354 calcination Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 5
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 4
- 238000000280 densification Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- 239000000443 aerosol Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000011268 mixed slurry Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910020215 Pb(Mg1/3Nb2/3)O3PbTiO3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003916 acid precipitation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
A1(NbxTaySbz)O3−δ (3)
(但し、前記一般式(3)中、AはLi、Na、及びKからなる群より選択される少なくとも一種のアルカリ金属元素であり、0.94≦(x+y)≦0.98、0<z<1であり、Aサイトである前記アルカリ金属元素が、Nb、Ta、及びSbを含むBサイトの遷移金属元素よりも過剰である)
LiaNabKc (2)
(但し、前記一般式(2)中、0<a≦0.5、0≦b≦1、0≦c≦1である)
A1(NbxTaySbz)O3−δ (3)
(但し、前記一般式(3)中、AはLi、Na、及びKからなる群より選択される少なくとも一種のアルカリ金属元素であり、0.94≦(x+y)≦0.98、0<z<1であり、Aサイトである前記アルカリ金属元素が、Nb、Ta、及びSbを含むBサイトの遷移金属元素よりも過剰である)
A1(NbxTaySbz)O3−δ (3)
(但し、前記一般式(3)中、AはLi、Na、及びKからなる群より選択される少なくとも一種のアルカリ金属元素であり、0.94≦(x+y)≦0.98、0<z<1であり、Aサイトであるアルカリ金属元素が、Nb、Ta、及びSbを含むBサイトの遷移金属元素よりも過剰である)
LiaNabKc (2)
(但し、前記一般式(2)中、0<a≦0.5、0≦b≦1、0≦c≦1である)
A1(NbxTaySbz)O3−δ (3)
(但し、前記一般式(3)中、AはLi、Na、及びKからなる群より選択される少なくとも一種のアルカリ金属元素であり、0.94≦(x+y)≦0.98、0<z<1であり、Aサイトであるアルカリ金属元素が、Nb、Ta、及びSbを含むBサイトの遷移金属元素よりも過剰である)
Li2CO3、C4H5O6Na・H2O、C4H5O6K、Nb2O5、及びTa2O5を、各金属元素の割合(モル比)が表1に示す組成比となるように秤量するとともに、アルコール中で16時間混合して混合物を調製した。得られた混合物を、750℃、5時間仮焼した後、ボールミルで粉砕することにより圧電/電歪磁器組成物を調製した。得られた圧電/電歪磁器組成物を使用し、2t/cm2の圧力で直径20mm×厚み6mmの大きさに圧粉成形して圧粉成形体を得た。得られた圧粉成形体をアルミナ容器内に収納し、1000℃で3時間焼成して焼成体(圧電/電歪体)を得た。得られた焼成体を、12mm×3mm×1mmの大きさに加工し、その両面に銀ペーストを塗布して電極を焼き付け、これを70℃のシリコンオイル中に浸漬するとともに、電極間に5kV/mmの直流電圧を15分間印加することにより分極して、圧電/電歪素子(参考例1)を得た。得られた圧電/電歪素子の各種物性値の測定結果を表1に示す。
Li2CO3、C4H5O6Na・H2O、C4H5O6K、Nb2O5、及びTa2O5を、各金属元素の割合(モル比)が表1に示す組成比となるように秤量したこと以外は、前述の参考例1の場合と同様にして、圧電/電歪素子(参考例2〜4、比較例1〜3)を得た。得られた圧電/電歪素子の各種物性値の測定結果を表1に示す。
Li2CO3、C4H5O6Na・H2O、C4H5O6K、Nb2O5、Sb2O3、及びTa2O5を、各金属元素の割合(モル比)が表1に示す組成比となるように秤量したこと以外は、前述の実施例1の場合と同様にして、圧電/電歪素子(実施例1,2)を得た。得られた圧電/電歪素子の各種物性値の測定結果を表1に示す。
Claims (6)
- Nb、Ta、Sb、及び一種以上のアルカリ金属元素を少なくとも含んでなる圧電/電歪磁器組成物であって、
前記Nb、前記Ta、及び前記アルカリ金属元素の割合(モル比)が非化学量論組成比で表されるとともに、
下記一般式(3)で表される組成中の金属元素の割合(モル比)を満たすように、前記金属元素を含有する化合物を混合して混合物を得、得られた前記混合物を仮焼することにより得られる圧電/電歪磁器組成物。
A1(NbxTaySbz)O3−δ (3)
(但し、前記一般式(3)中、AはLi、Na、及びKからなる群より選択される少なくとも一種のアルカリ金属元素であり、0.94≦(x+y)≦0.98、0<z<1であり、Aサイトである前記アルカリ金属元素が、Nb、Ta、及びSbを含むBサイトの遷移金属元素よりも過剰である) - 前記一般式(3)中、Aが下記一般式(2)で表されるとともに、x及びyの範囲がそれぞれ0<x<1、0<y<1である請求項1に記載の圧電/電歪磁器組成物。
LiaNabKc (2)
(但し、前記一般式(2)中、0<a≦0.5、0≦b≦1、0≦c≦1である) - 下記一般式(3)で表される組成中の金属元素の割合(モル比)を満たすように、前記金属元素を含有する化合物を混合して混合物を得、得られた前記混合物を仮焼することにより、
Nb、Ta、Sb、及び一種以上のアルカリ金属元素を含み、前記Nb、前記Ta、及び前記アルカリ金属元素の割合(モル比)が非化学量論組成比で表される圧電/電歪磁器組成物を得る圧電/電歪磁器組成物の製造方法。
A1(NbxTaySbz)O3−δ (3)
(但し、前記一般式(3)中、AはLi、Na、及びKからなる群より選択される少なくとも一種のアルカリ金属元素であり、0.94≦(x+y)≦0.98、0<z<1であり、Aサイトである前記アルカリ金属元素が、Nb、Ta、及びSbを含むBサイトの遷移金属元素よりも過剰である) - 前記一般式(3)中、Aが下記一般式(2)で表されるとともに、x及びyの範囲がそれぞれ0<x<1、0<y<1である請求項3に記載の圧電/電歪磁器組成物の製造方法。
LiaNabKc (2)
(但し、前記一般式(2)中、0<a≦0.5、0≦b≦1、0≦c≦1である) - 請求項1又は2に記載の圧電/電歪磁器組成物を焼成してなる圧電/電歪体と、前記圧電/電歪体に電気的に接続される電極とを備えた圧電/電歪素子。
- 前記圧電/電歪体と前記電極の形状がそれぞれ膜状であるとともに、セラミックスからなる基体を更に備え、
前記圧電/電歪体が前記基体上に直接又は前記電極を介して固着された請求項5に記載の圧電/電歪素子。
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JP5281782B2 (ja) * | 2006-12-22 | 2013-09-04 | 日本碍子株式会社 | (Li,Na,K)(Nb,Ta)O3系圧電材料の製造方法 |
US8124047B2 (en) | 2006-12-22 | 2012-02-28 | Ngk Insulators, Ltd. | Method for manufacturing (Li, Na, K)(Nb, Ta)O3 type piezoelectric material |
JP5021452B2 (ja) * | 2007-02-27 | 2012-09-05 | 日本碍子株式会社 | 圧電/電歪磁器組成物および圧電/電歪素子 |
JP5044437B2 (ja) * | 2007-03-20 | 2012-10-10 | 日本碍子株式会社 | 圧電/電歪磁器焼結体の製造方法 |
JP2008258516A (ja) * | 2007-04-09 | 2008-10-23 | Funai Electric Co Ltd | 圧電素子及び結晶質セラミックスの成膜方法 |
JP5129067B2 (ja) * | 2007-10-03 | 2013-01-23 | 日本碍子株式会社 | 圧電/電歪磁器組成物及び圧電/電歪素子 |
US7956518B2 (en) * | 2007-10-03 | 2011-06-07 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive ceramic composition and piezoelectric/electrostrictive device |
US8022604B2 (en) | 2007-10-19 | 2011-09-20 | Ngk Insulators, Ltd. | (Li, Na, K)(Nb, Ta)O3 type piezoelectric/electrostrictive ceramic composition containing 30-50 mol% Ta and piezoelectric/electrorestrictive device containing the same |
JP5021595B2 (ja) * | 2007-10-19 | 2012-09-12 | 日本碍子株式会社 | 圧電/電歪磁器組成物及び圧電/電歪素子 |
JP5281786B2 (ja) * | 2007-11-14 | 2013-09-04 | 日本碍子株式会社 | (Li,Na,K)(Nb,Ta)O3系圧電材料、及びその製造方法 |
JP5876974B2 (ja) * | 2008-03-21 | 2016-03-02 | 日本碍子株式会社 | 圧電/電歪磁器組成物の製造方法 |
JP4987815B2 (ja) * | 2008-07-28 | 2012-07-25 | 日本碍子株式会社 | 圧電/電歪磁器組成物の製造方法 |
US20110012051A1 (en) * | 2009-07-14 | 2011-01-20 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive ceramic composition |
JP5515675B2 (ja) * | 2009-11-20 | 2014-06-11 | 日立金属株式会社 | 圧電薄膜素子及び圧電薄膜デバイス |
JP5531635B2 (ja) * | 2010-01-18 | 2014-06-25 | 日立金属株式会社 | 圧電薄膜素子及び圧電薄膜デバイス |
JP5662197B2 (ja) * | 2010-03-18 | 2015-01-28 | 日本碍子株式会社 | 圧電/電歪焼結体、及び圧電/電歪素子 |
JP5940561B2 (ja) | 2011-12-20 | 2016-06-29 | 太陽誘電株式会社 | 圧電デバイス |
US10585480B1 (en) | 2016-05-10 | 2020-03-10 | Apple Inc. | Electronic device with an input device having a haptic engine |
US10768747B2 (en) | 2017-08-31 | 2020-09-08 | Apple Inc. | Haptic realignment cues for touch-input displays |
US11054932B2 (en) * | 2017-09-06 | 2021-07-06 | Apple Inc. | Electronic device having a touch sensor, force sensor, and haptic actuator in an integrated module |
US10768738B1 (en) | 2017-09-27 | 2020-09-08 | Apple Inc. | Electronic device having a haptic actuator with magnetic augmentation |
US10942571B2 (en) | 2018-06-29 | 2021-03-09 | Apple Inc. | Laptop computing device with discrete haptic regions |
US10936071B2 (en) | 2018-08-30 | 2021-03-02 | Apple Inc. | Wearable electronic device with haptic rotatable input |
US10966007B1 (en) | 2018-09-25 | 2021-03-30 | Apple Inc. | Haptic output system |
US11024135B1 (en) | 2020-06-17 | 2021-06-01 | Apple Inc. | Portable electronic device having a haptic button assembly |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001316182A (ja) * | 2000-04-28 | 2001-11-13 | Kyocera Corp | 圧電磁器および圧電共振子 |
JP2004300012A (ja) * | 2002-07-16 | 2004-10-28 | Denso Corp | 圧電磁器組成物及びその製造方法並びに圧電素子及び誘電素子 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4417103Y1 (ja) | 1966-02-02 | 1969-07-23 | ||
US6049158A (en) * | 1994-02-14 | 2000-04-11 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive film element having convex diaphragm portions and method of producing the same |
CN1050229C (zh) * | 1994-08-11 | 2000-03-08 | 日本碍子株式会社 | 压电/电致伸缩膜元件及其制作方法 |
JP3775184B2 (ja) * | 1999-08-31 | 2006-05-17 | 日本碍子株式会社 | 圧電体の製造方法 |
JP4001362B2 (ja) | 2002-01-31 | 2007-10-31 | Tdk株式会社 | 圧電磁器およびその製造方法 |
JP4212289B2 (ja) * | 2002-04-04 | 2009-01-21 | Tdk株式会社 | 圧電磁器の製造方法 |
EP1382588B9 (en) * | 2002-07-16 | 2012-06-27 | Denso Corporation | Piezoelectric ceramic composition and method of production of same |
JP4398635B2 (ja) * | 2002-09-24 | 2010-01-13 | 株式会社ノリタケカンパニーリミテド | 圧電セラミックス |
JP2004244300A (ja) | 2003-01-23 | 2004-09-02 | Denso Corp | 圧電磁器組成物及びその製造方法,並びに圧電素子及び誘電素子 |
EP1457471B1 (en) * | 2003-03-14 | 2014-02-26 | Denso Corporation | Crystal oriented ceramics and production method of same |
JP4326374B2 (ja) * | 2003-03-14 | 2009-09-02 | 株式会社豊田中央研究所 | 結晶配向セラミックス及びその製造方法 |
-
2006
- 2006-03-07 WO PCT/JP2006/304335 patent/WO2006095716A1/ja active Application Filing
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001316182A (ja) * | 2000-04-28 | 2001-11-13 | Kyocera Corp | 圧電磁器および圧電共振子 |
JP2004300012A (ja) * | 2002-07-16 | 2004-10-28 | Denso Corp | 圧電磁器組成物及びその製造方法並びに圧電素子及び誘電素子 |
Non-Patent Citations (1)
Title |
---|
JPN6012024389; 理化学辞典 第5版第8刷, 20041220, 第750頁等, 株式会社岩波書店 * |
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