JP5342704B1 - 高周波回路モジュール - Google Patents
高周波回路モジュール Download PDFInfo
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- JP5342704B1 JP5342704B1 JP2013023443A JP2013023443A JP5342704B1 JP 5342704 B1 JP5342704 B1 JP 5342704B1 JP 2013023443 A JP2013023443 A JP 2013023443A JP 2013023443 A JP2013023443 A JP 2013023443A JP 5342704 B1 JP5342704 B1 JP 5342704B1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/0243—Printed circuits associated with mounted high frequency components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/023—Reduction of cross-talk, noise or electromagnetic interference using auxiliary mounted passive components or auxiliary substances
- H05K1/0233—Filters, inductors or a magnetic substance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/025—Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance
- H05K1/0253—Impedance adaptations of transmission lines by special lay-out of power planes, e.g. providing openings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Transceivers (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
【解決手段】多層回路基板200に高周波スイッチ120を埋設する。多層回路基板200において高周波スイッチ120の主面に対して絶縁体層を挟んで対向する第1導体層241にはビア導体を介して入出力端子と接続する回路パターン311〜318が形成され、第1導体層241には高周波スイッチ120の主面に対向する領域であって前記回路パターン以外の領域にグランド導体310の存在しないパターン抜け部319が形成され、且つ、高周波スイッチ120に対して第1導体層241よりも外側に配置された第3導体層243には少なくとも前記高周波スイッチ210の主面を多層回路基板200の厚み方向に投影した領域にグランド導体330が形成されている。
【選択図】図2
Description
Claims (4)
- 絶縁体層と導体層とを交互に積層してなり第1主面に電子部品が実装され且つ第1主面とは反対側の第2主面に高周波回路モジュールの端子電極が形成された多層回路基板と、
高周波信号の入出力端子が主面に形成されアンテナの接続先を周波数毎に切り替える高周波スイッチとを備え、
該高周波スイッチは前記主面が多層回路基板の第1主面に対向するように多層回路基板内に埋設され、
前記多層回路基板において前記高周波スイッチの主面に対して絶縁体層を挟んで対向する第1導体層にはビア導体を介して入出力端子と接続する回路パターンが該ビア導体の形成位置から高周波スイッチの主面に対向する領域の外側に向けて形成され、且つ、該第1導体層にはグランド端子を除く前記高周波スイッチの入出力端子の配置領域を多層回路基板の厚み方向に投影した領域にかからないようにグランド導体が形成され、
前記高周波スイッチに対して前記第1導体層よりも第1主面側に配置された第3導体層には、少なくとも前記高周波スイッチの入出力端子を多層回路基板の厚み方向に投影した領域にグランド導体が形成され、
前記第1導体層と第3導体層の間に形成された1つ以上の第2導体層には前記高周波スイッチの入出力端子の配置領域を多層回路基板の厚み方向に投影した領域にかからないようにグランド導体が形成されている
ことを特徴とする高周波回路モジュール。 - 前記多層回路基板の第2主面にはアンテナ接続用の端子電極が形成され、
前記多層回路基板の第1主面にはアンテナと高周波スイッチとの間に介在する整合回路が実装されている
ことを特徴とする請求項1記載の高周波回路モジュール。 - 前記高周波スイッチの入出力端子は、アンテナと接続するアンテナ端子と、高周波回路と接続する複数の回路端子とを含み、
回路端子を通過させる高周波信号は隣り合う回路端子間で所定周波数以上離れている
ことを特徴とする請求項1又は2記載の高周波回路モジュール。 - 前記多層回路基板は他の導体層より厚みが大きく且つグランドとして機能する導体層であるコア層を含み、前記高周波スイッチは前記コア層に形成した貫通孔又は凹部内に配置されている
ことを特徴とする請求項1乃至3何れか1項記載の高周波回路モジュール。
Priority Applications (1)
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---|---|---|---|
JP2013023443A JP5342704B1 (ja) | 2012-11-12 | 2013-02-08 | 高周波回路モジュール |
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JP2012248255 | 2012-11-12 | ||
JP2012248255 | 2012-11-12 | ||
JP2013023443A JP5342704B1 (ja) | 2012-11-12 | 2013-02-08 | 高周波回路モジュール |
Publications (2)
Publication Number | Publication Date |
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JP5342704B1 true JP5342704B1 (ja) | 2013-11-13 |
JP2014112629A JP2014112629A (ja) | 2014-06-19 |
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JP2013023443A Expired - Fee Related JP5342704B1 (ja) | 2012-11-12 | 2013-02-08 | 高周波回路モジュール |
JP2013168547A Pending JP2014112645A (ja) | 2012-11-12 | 2013-08-14 | 高周波回路モジュール |
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JP2013168547A Pending JP2014112645A (ja) | 2012-11-12 | 2013-08-14 | 高周波回路モジュール |
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US (1) | US9451690B2 (ja) |
JP (2) | JP5342704B1 (ja) |
CN (1) | CN103813635B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106489305A (zh) * | 2014-05-14 | 2017-03-08 | 奥特斯奥地利科技与系统技术有限公司 | 一种在线路和接触结构之间具有无加宽的过渡区的导体串列 |
Families Citing this family (19)
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JP6343871B2 (ja) * | 2013-04-04 | 2018-06-20 | 大日本印刷株式会社 | 部品実装多層配線基板 |
WO2016006676A1 (ja) * | 2014-07-10 | 2016-01-14 | 株式会社村田製作所 | 高周波モジュール |
JP6455528B2 (ja) * | 2015-01-29 | 2019-01-23 | 株式会社村田製作所 | 高周波モジュール |
JP2016207940A (ja) * | 2015-04-27 | 2016-12-08 | イビデン株式会社 | 電子部品内蔵配線板及びその製造方法 |
CN106356351B (zh) * | 2015-07-15 | 2019-02-01 | 凤凰先驱股份有限公司 | 基板结构及其制作方法 |
US10244618B2 (en) * | 2015-10-29 | 2019-03-26 | Western Digital Technologies, Inc. | Patterned ground structure filter designs with improved performance |
JP6451605B2 (ja) * | 2015-11-18 | 2019-01-16 | 株式会社村田製作所 | 高周波モジュール及び通信装置 |
JP6542685B2 (ja) * | 2016-01-25 | 2019-07-10 | 京セラ株式会社 | 配線基板 |
US10476532B2 (en) * | 2016-02-24 | 2019-11-12 | Murata Manufacturing Co., Ltd. | Multiplexer, transmission apparatus, and reception apparatus |
JP6658070B2 (ja) * | 2016-02-24 | 2020-03-04 | 株式会社村田製作所 | マルチプレクサ、送信装置および受信装置 |
CN110392926B (zh) * | 2017-03-14 | 2022-12-06 | 株式会社村田制作所 | 高频模块 |
WO2018186154A1 (ja) * | 2017-04-04 | 2018-10-11 | 株式会社村田製作所 | 高周波モジュール及び通信装置 |
US11690173B2 (en) * | 2021-06-22 | 2023-06-27 | Unimicron Technology Corp. | Circuit board structure |
TWI698008B (zh) | 2018-08-31 | 2020-07-01 | 英屬開曼群島商鳳凰先驅股份有限公司 | 具能量轉換功能之集積化驅動模組及其製造方法 |
US20200161206A1 (en) * | 2018-11-20 | 2020-05-21 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and semiconductor manufacturing process |
US20200243484A1 (en) * | 2019-01-30 | 2020-07-30 | Avago Technologies International Sales Pte. Limited | Radio frequency (rf) switch device including rf switch integrated circuit (ic) divided between sides of pcb |
JP6962503B2 (ja) | 2019-04-15 | 2021-11-05 | 株式会社村田製作所 | 伝送線路及び電子機器 |
JPWO2021225116A1 (ja) * | 2020-05-07 | 2021-11-11 | ||
CN117296150A (zh) * | 2021-06-07 | 2023-12-26 | 株式会社村田制作所 | 高频模块以及通信装置 |
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2013
- 2013-02-08 JP JP2013023443A patent/JP5342704B1/ja not_active Expired - Fee Related
- 2013-04-24 US US13/869,335 patent/US9451690B2/en active Active
- 2013-08-02 CN CN201310334709.0A patent/CN103813635B/zh not_active Expired - Fee Related
- 2013-08-14 JP JP2013168547A patent/JP2014112645A/ja active Pending
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JPH11225088A (ja) * | 1997-12-03 | 1999-08-17 | Hitachi Metals Ltd | マルチバンド用高周波スイッチモジュール |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106489305A (zh) * | 2014-05-14 | 2017-03-08 | 奥特斯奥地利科技与系统技术有限公司 | 一种在线路和接触结构之间具有无加宽的过渡区的导体串列 |
CN106489305B (zh) * | 2014-05-14 | 2020-02-28 | 奥特斯奥地利科技与系统技术有限公司 | 一种在线路和接触结构之间具有无加宽的过渡区的导体串列 |
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Publication number | Publication date |
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CN103813635A (zh) | 2014-05-21 |
US20140133117A1 (en) | 2014-05-15 |
CN103813635B (zh) | 2018-03-20 |
US9451690B2 (en) | 2016-09-20 |
JP2014112645A (ja) | 2014-06-19 |
JP2014112629A (ja) | 2014-06-19 |
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