JP5336070B2 - 選択エピタキシャル成長プロセスの改良方法 - Google Patents

選択エピタキシャル成長プロセスの改良方法 Download PDF

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JP5336070B2
JP5336070B2 JP2007328923A JP2007328923A JP5336070B2 JP 5336070 B2 JP5336070 B2 JP 5336070B2 JP 2007328923 A JP2007328923 A JP 2007328923A JP 2007328923 A JP2007328923 A JP 2007328923A JP 5336070 B2 JP5336070 B2 JP 5336070B2
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gas
halogen
semiconductor
introduction
substrate
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JP2008160123A5 (enExample
JP2008160123A (ja
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フレデリク・レイズ
ロジャー・ルー
マティー・カイマックス
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Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2007328923A 2006-12-21 2007-12-20 選択エピタキシャル成長プロセスの改良方法 Active JP5336070B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP06126942.9 2006-12-21
EP06126942 2006-12-21
EP07112851 2007-07-20
EP07112851.6 2007-07-20

Publications (3)

Publication Number Publication Date
JP2008160123A JP2008160123A (ja) 2008-07-10
JP2008160123A5 JP2008160123A5 (enExample) 2010-08-19
JP5336070B2 true JP5336070B2 (ja) 2013-11-06

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5192954B2 (ja) * 2008-09-12 2013-05-08 古河電気工業株式会社 連続薄膜の形成方法、形成装置、成膜ガラス基板及び半導体素子
JP5304255B2 (ja) 2009-01-13 2013-10-02 住友電気工業株式会社 炭化ケイ素基板、エピタキシャルウエハおよび炭化ケイ素基板の製造方法
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9564312B2 (en) * 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
JP6924593B2 (ja) * 2017-03-21 2021-08-25 信越半導体株式会社 エピタキシャルウェーハの製造方法
CN114127890B (zh) 2019-05-01 2025-10-14 朗姆研究公司 调整的原子层沉积
KR20220006663A (ko) 2019-06-07 2022-01-17 램 리써치 코포레이션 원자 층 증착 동안 막 특성들의 인-시츄 (in-situ) 제어
TW202223133A (zh) 2020-07-28 2022-06-16 美商蘭姆研究公司 含矽膜中的雜質減量
JP2022097945A (ja) * 2020-12-21 2022-07-01 株式会社アルバック 基板処理装置及び基板処理方法
KR20240032126A (ko) 2021-07-09 2024-03-08 램 리써치 코포레이션 실리콘-함유 막들의 플라즈마 강화 원자 층 증착

Family Cites Families (2)

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Publication number Priority date Publication date Assignee Title
JP2000114190A (ja) * 1998-10-08 2000-04-21 Sony Corp 気相成長方法および半導体装置の製造方法
JP2006294953A (ja) * 2005-04-13 2006-10-26 Elpida Memory Inc 半導体装置の製造方法及び製造装置

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