JP2008160123A5 - - Google Patents
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- Publication number
- JP2008160123A5 JP2008160123A5 JP2007328923A JP2007328923A JP2008160123A5 JP 2008160123 A5 JP2008160123 A5 JP 2008160123A5 JP 2007328923 A JP2007328923 A JP 2007328923A JP 2007328923 A JP2007328923 A JP 2007328923A JP 2008160123 A5 JP2008160123 A5 JP 2008160123A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- manufacturing
- halogen
- containing etching
- introduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 40
- 238000004519 manufacturing process Methods 0.000 claims 18
- 238000005530 etching Methods 0.000 claims 16
- 229910052736 halogen Inorganic materials 0.000 claims 14
- 150000002367 halogens Chemical class 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 12
- 238000011065 in-situ storage Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 6
- 239000011810 insulating material Substances 0.000 claims 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 3
- 239000012159 carrier gas Substances 0.000 claims 3
- 238000004140 cleaning Methods 0.000 claims 3
- 239000011261 inert gas Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- VJFOQKOUHKDIGD-UHFFFAOYSA-N [GeH3][SiH3] Chemical compound [GeH3][SiH3] VJFOQKOUHKDIGD-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 230000000977 initiatory effect Effects 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06126942.9 | 2006-12-21 | ||
| EP06126942 | 2006-12-21 | ||
| EP07112851 | 2007-07-20 | ||
| EP07112851.6 | 2007-07-20 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008160123A JP2008160123A (ja) | 2008-07-10 |
| JP2008160123A5 true JP2008160123A5 (enExample) | 2010-08-19 |
| JP5336070B2 JP5336070B2 (ja) | 2013-11-06 |
Family
ID=38521171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007328923A Active JP5336070B2 (ja) | 2006-12-21 | 2007-12-20 | 選択エピタキシャル成長プロセスの改良方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5336070B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5192954B2 (ja) * | 2008-09-12 | 2013-05-08 | 古河電気工業株式会社 | 連続薄膜の形成方法、形成装置、成膜ガラス基板及び半導体素子 |
| JP5304255B2 (ja) | 2009-01-13 | 2013-10-02 | 住友電気工業株式会社 | 炭化ケイ素基板、エピタキシャルウエハおよび炭化ケイ素基板の製造方法 |
| US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US9564312B2 (en) * | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| JP6924593B2 (ja) * | 2017-03-21 | 2021-08-25 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
| CN114127890B (zh) | 2019-05-01 | 2025-10-14 | 朗姆研究公司 | 调整的原子层沉积 |
| KR20220006663A (ko) | 2019-06-07 | 2022-01-17 | 램 리써치 코포레이션 | 원자 층 증착 동안 막 특성들의 인-시츄 (in-situ) 제어 |
| TW202223133A (zh) | 2020-07-28 | 2022-06-16 | 美商蘭姆研究公司 | 含矽膜中的雜質減量 |
| JP2022097945A (ja) * | 2020-12-21 | 2022-07-01 | 株式会社アルバック | 基板処理装置及び基板処理方法 |
| KR20240032126A (ko) | 2021-07-09 | 2024-03-08 | 램 리써치 코포레이션 | 실리콘-함유 막들의 플라즈마 강화 원자 층 증착 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000114190A (ja) * | 1998-10-08 | 2000-04-21 | Sony Corp | 気相成長方法および半導体装置の製造方法 |
| JP2006294953A (ja) * | 2005-04-13 | 2006-10-26 | Elpida Memory Inc | 半導体装置の製造方法及び製造装置 |
-
2007
- 2007-12-20 JP JP2007328923A patent/JP5336070B2/ja active Active
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