JP5331678B2 - 単結晶シリコン電極を備えた容量性微小電気機械式センサー - Google Patents
単結晶シリコン電極を備えた容量性微小電気機械式センサー Download PDFInfo
- Publication number
- JP5331678B2 JP5331678B2 JP2009505402A JP2009505402A JP5331678B2 JP 5331678 B2 JP5331678 B2 JP 5331678B2 JP 2009505402 A JP2009505402 A JP 2009505402A JP 2009505402 A JP2009505402 A JP 2009505402A JP 5331678 B2 JP5331678 B2 JP 5331678B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sensor
- capacitive
- electrode
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 21
- 239000003989 dielectric material Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 5
- 230000001133 acceleration Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000002184 metal Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 238000000708 deep reactive-ion etching Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Gyroscopes (AREA)
Description
好実施例では、第1の層はダイヤフラムを形成する。第1の層は、また、共振構造、バネ、又は検定質量を形成するように食刻されることも可能である。
Claims (10)
- 容量性微小電気機械式センサーであって、
a)上面と底面を有し、単結晶シリコンより成り、少なくとも1つの電極を形成する第1の層と、
b)上面と底面を有し、単結晶シリコンより成る第2の層であって、該第2の層には、該第2の層の前記上面から前記底面へと延びる誘電体材質の絶縁トレンチによって互いに絶縁された複数の電極が画定されている該第2の層と、
c)前記第2の層の前記底面に位置付けられ且つ前記第2の層の前記複数の電極のそれぞれと電気接続関係にある電気接点とを有しており、
前記第1の層の前記少なくとも1つの電極と前記第2の層の前記複数の電極とが、コンデンサーを形成することを特徴とする容量性微小電気機械式センサー。 - 前記絶縁トレンチが前記電極周囲の外囲を形成することを特徴とする請求項1に記載の容量性微小電気機械式センサー。
- 前記第2の層の前記上面は食刻されて前記第2の層に空所を形成し、該空所が容量性ギャップを画定することを特徴とする請求項1または2に記載の容量性微小電気機械式センサー。
- さらに第3の層を有しており、該第3の層は、単結晶シリコンより成り、且つ、該第3の層は、誘電体層によって前記第1の層の前記上面から分離されることを特徴とする請求項1〜3のいずれか一つに記載の容量性微小電気機械式センサー。
- 前記第3の層は食刻されて圧力ポートを画定することを特徴とする請求項4に記載の容量性微小電気機械式センサー。
- 前記第1の層がダイヤフラムを形成することを特徴とする請求項1〜5のいずれか一つに記載の容量性微小電気機械式センサー。
- 前記第1の層は食刻されて、共振構造、バネ、又は検定質量の少なくとも1つを画定することを特徴とする請求項1〜6のいずれか一つに記載の容量性微小電気機械式センサー。
- 前記センサーは、圧力、加速度、角速度又は共振の少なくとも1つを検知することを特徴とする請求項1〜7のいずれか一つに記載の容量性微小電気機械式センサー。
- 全ての検知素子が前記第1の層内に位置付けられていることを特徴とする請求項1〜8のいずれか一つに記載の容量性微小電気機械式センサー。
- 前記第2の層の前記複数の電極のうち、少なくとも1つは電気防護部分であり、当該電気防護部分は、前記複数の電極のうちの他の電極を取り囲むように形成されていることを特徴とする請求項1〜9のいずれか一つに記載の容量性微小電気機械式センサー。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79179006P | 2006-04-13 | 2006-04-13 | |
US60/791,790 | 2006-04-13 | ||
US11/707,347 US7539003B2 (en) | 2005-12-01 | 2007-02-16 | Capacitive micro-electro-mechanical sensors with single crystal silicon electrodes |
US11/707,347 | 2007-02-16 | ||
PCT/US2007/008599 WO2007120576A2 (en) | 2006-04-13 | 2007-04-04 | Capacitive micro- electro-mechanical sensors with single crystal silicon electrodes |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013093834A Division JP5806254B2 (ja) | 2006-04-13 | 2013-04-26 | 単結晶シリコン電極を備えた容量性微小電気機械式センサー |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009533866A JP2009533866A (ja) | 2009-09-17 |
JP5331678B2 true JP5331678B2 (ja) | 2013-10-30 |
Family
ID=38610099
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009505402A Active JP5331678B2 (ja) | 2006-04-13 | 2007-04-04 | 単結晶シリコン電極を備えた容量性微小電気機械式センサー |
JP2013093834A Active JP5806254B2 (ja) | 2006-04-13 | 2013-04-26 | 単結晶シリコン電極を備えた容量性微小電気機械式センサー |
JP2015095070A Active JP5956644B2 (ja) | 2006-04-13 | 2015-05-07 | 単結晶シリコン電極を備えた容量性微小電気機械式センサー |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013093834A Active JP5806254B2 (ja) | 2006-04-13 | 2013-04-26 | 単結晶シリコン電極を備えた容量性微小電気機械式センサー |
JP2015095070A Active JP5956644B2 (ja) | 2006-04-13 | 2015-05-07 | 単結晶シリコン電極を備えた容量性微小電気機械式センサー |
Country Status (5)
Country | Link |
---|---|
US (1) | US7539003B2 (ja) |
EP (1) | EP2011132B1 (ja) |
JP (3) | JP5331678B2 (ja) |
CN (1) | CN101449347B (ja) |
WO (1) | WO2007120576A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012154784A (ja) * | 2011-01-26 | 2012-08-16 | Rohm Co Ltd | 静電容量型圧力センサおよび静電容量型圧力センサの製造方法 |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7741964B2 (en) * | 2007-05-31 | 2010-06-22 | Schrader Electronics Ltd. | Tire pressure detector having reduced power consumption mechanism |
JP5260155B2 (ja) * | 2008-06-16 | 2013-08-14 | 株式会社堀場エステック | 静電容量型圧力センサ及びその製造方法 |
US8238073B2 (en) * | 2008-07-18 | 2012-08-07 | Synaptics, Inc. | In-molded capacitive sensors |
US8499629B2 (en) * | 2008-10-10 | 2013-08-06 | Honeywell International Inc. | Mounting system for torsional suspension of a MEMS device |
ITBO20080079U1 (it) * | 2008-10-30 | 2010-04-30 | Lorenzo Peretto | Sistema costruttivo per un sensore capacitivo. |
US8710599B2 (en) * | 2009-08-04 | 2014-04-29 | Fairchild Semiconductor Corporation | Micromachined devices and fabricating the same |
US8421168B2 (en) * | 2009-11-17 | 2013-04-16 | Fairchild Semiconductor Corporation | Microelectromechanical systems microphone packaging systems |
US8490495B2 (en) | 2010-05-05 | 2013-07-23 | Consensic, Inc. | Capacitive pressure sensor with vertical electrical feedthroughs and method to make the same |
KR101871865B1 (ko) | 2010-09-18 | 2018-08-02 | 페어차일드 세미컨덕터 코포레이션 | 멀티-다이 mems 패키지 |
WO2012037536A2 (en) | 2010-09-18 | 2012-03-22 | Fairchild Semiconductor Corporation | Packaging to reduce stress on microelectromechanical systems |
CN103221779B (zh) | 2010-09-18 | 2017-05-31 | 快捷半导体公司 | 微机械整体式六轴惯性传感器 |
DE112011103124T5 (de) | 2010-09-18 | 2013-12-19 | Fairchild Semiconductor Corporation | Biegelager zum Verringern von Quadratur für mitschwingende mikromechanische Vorrichtungen |
US9278845B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope Z-axis electrode structure |
CN103221778B (zh) | 2010-09-18 | 2016-03-30 | 快捷半导体公司 | 具有单驱动的微机械单片式三轴陀螺仪 |
US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
WO2012040245A2 (en) | 2010-09-20 | 2012-03-29 | Fairchild Semiconductor Corporation | Through silicon via with reduced shunt capacitance |
US8673756B2 (en) * | 2011-04-14 | 2014-03-18 | Robert Bosch Gmbh | Out-of-plane spacer defined electrode |
CN103733304B (zh) * | 2011-06-29 | 2016-08-17 | 因文森斯公司 | 其中一部分暴露在环境下并且带有竖直集成电子器件的气密封mems设备 |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
US8714021B2 (en) | 2012-02-27 | 2014-05-06 | Amphenol Thermometrics, Inc. | Catheter die and method of fabricating the same |
US8857264B2 (en) | 2012-03-30 | 2014-10-14 | Amphenol Thermometrics, Inc. | Catheter die |
US8754694B2 (en) | 2012-04-03 | 2014-06-17 | Fairchild Semiconductor Corporation | Accurate ninety-degree phase shifter |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
US8742964B2 (en) | 2012-04-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Noise reduction method with chopping for a merged MEMS accelerometer sensor |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
KR102058489B1 (ko) | 2012-04-05 | 2019-12-23 | 페어차일드 세미컨덕터 코포레이션 | 멤스 장치 프론트 엔드 전하 증폭기 |
US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
KR101999745B1 (ko) | 2012-04-12 | 2019-10-01 | 페어차일드 세미컨덕터 코포레이션 | 미세 전자 기계 시스템 구동기 |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
EP2725334B1 (en) * | 2012-10-25 | 2020-04-15 | Invensense, Inc. | A pressure sensor having a membrane and a method for fabricating the same |
US9156676B2 (en) * | 2013-04-09 | 2015-10-13 | Honeywell International Inc. | Sensor with isolated diaphragm |
US9837935B2 (en) | 2013-10-29 | 2017-12-05 | Honeywell International Inc. | All-silicon electrode capacitive transducer on a glass substrate |
EP2871455B1 (en) | 2013-11-06 | 2020-03-04 | Invensense, Inc. | Pressure sensor |
EP3367082A1 (en) * | 2013-11-06 | 2018-08-29 | Invensense, Inc. | Pressure sensor |
US9464950B2 (en) * | 2013-11-15 | 2016-10-11 | Rosemount Aerospace Inc. | Capacitive pressure sensors for high temperature applications |
CN103552980A (zh) * | 2013-11-15 | 2014-02-05 | 安徽北方芯动联科微系统技术有限公司 | Mems芯片圆片级封装方法及其单片超小型mems芯片 |
NO2777050T3 (ja) * | 2014-02-25 | 2018-06-16 | ||
FI126599B (en) * | 2014-02-26 | 2017-03-15 | Murata Manufacturing Co | Microelectromechanical frame structure |
CN105084296B (zh) * | 2014-04-25 | 2017-02-08 | 无锡华润上华半导体有限公司 | Mems电容式压力传感器的制作方法 |
EP3076146B1 (en) | 2015-04-02 | 2020-05-06 | Invensense, Inc. | Pressure sensor |
US10697994B2 (en) | 2017-02-22 | 2020-06-30 | Semiconductor Components Industries, Llc | Accelerometer techniques to compensate package stress |
KR101988469B1 (ko) * | 2017-07-26 | 2019-06-13 | 주식회사 신성씨앤티 | 멤스 센서 및 그 제조 방법 |
CN108051134A (zh) * | 2017-11-23 | 2018-05-18 | 胡波 | 闭环工作方式的电容式压力传感器 |
CN108680138A (zh) * | 2018-05-09 | 2018-10-19 | 中交第公路勘察设计研究院有限公司 | 软土地基路基大变形沉降自动监测系统及其方法 |
DE102018119943A1 (de) * | 2018-08-16 | 2020-02-20 | Endress+Hauser SE+Co. KG | Drucksensor |
US11225409B2 (en) | 2018-09-17 | 2022-01-18 | Invensense, Inc. | Sensor with integrated heater |
US11060929B2 (en) * | 2019-03-04 | 2021-07-13 | Silicon Microstructures, Inc. | Pressure sensor die attach |
WO2020236661A1 (en) * | 2019-05-17 | 2020-11-26 | Invensense, Inc. | A pressure sensor with improve hermeticity |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4617606A (en) * | 1985-01-31 | 1986-10-14 | Motorola, Inc. | Capacitive pressure transducer |
JPS61272623A (ja) * | 1985-05-29 | 1986-12-02 | Fuji Electric Co Ltd | 静電容量式圧力センサ |
JPS6259828A (ja) * | 1985-09-11 | 1987-03-16 | Fuji Electric Co Ltd | 静電容量式圧力センサ |
FI78784C (fi) * | 1988-01-18 | 1989-09-11 | Vaisala Oy | Tryckgivarkonstruktion och foerfarande foer framstaellning daerav. |
DE4106288C2 (de) * | 1991-02-28 | 2001-05-31 | Bosch Gmbh Robert | Sensor zur Messung von Drücken oder Beschleunigungen |
JPH06323939A (ja) * | 1993-05-17 | 1994-11-25 | Omron Corp | 静電容量式センサ |
US5511428A (en) * | 1994-06-10 | 1996-04-30 | Massachusetts Institute Of Technology | Backside contact of sensor microstructures |
FR2722878B1 (fr) | 1994-07-22 | 1996-09-06 | Suisse Electronique Microtech | Capteur de pression differentielle de type capacitif |
JPH08122251A (ja) * | 1994-10-19 | 1996-05-17 | Mitsubishi Materials Corp | 赤外線式ガス分析装置 |
US6212056B1 (en) * | 1999-03-26 | 2001-04-03 | Lucent Technologies Inc. | Micromachined variable capacitor |
JP3588286B2 (ja) * | 1999-10-06 | 2004-11-10 | 株式会社山武 | 容量式圧力センサ |
US6396677B1 (en) * | 2000-05-17 | 2002-05-28 | Xerox Corporation | Photolithographically-patterned variable capacitor structures and method of making |
JP3629185B2 (ja) * | 2000-06-15 | 2005-03-16 | 株式会社日立製作所 | 半導体センサ及びその製造方法 |
US6507475B1 (en) * | 2000-06-27 | 2003-01-14 | Motorola, Inc. | Capacitive device and method of manufacture |
US6377438B1 (en) * | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
JP2002228678A (ja) * | 2001-02-02 | 2002-08-14 | Denso Corp | 半導体力学量センサとその製造方法 |
WO2002080255A1 (en) * | 2001-03-16 | 2002-10-10 | Corning Intellisense Corporation | Electrostatically actuated micro-electro-mechanical devices and method of manufacture |
JP2002328137A (ja) * | 2001-04-27 | 2002-11-15 | Matsushita Electric Works Ltd | 加速度センサ及びその製造方法 |
US6815739B2 (en) * | 2001-05-18 | 2004-11-09 | Corporation For National Research Initiatives | Radio frequency microelectromechanical systems (MEMS) devices on low-temperature co-fired ceramic (LTCC) substrates |
US6909589B2 (en) * | 2002-11-20 | 2005-06-21 | Corporation For National Research Initiatives | MEMS-based variable capacitor |
JP4159895B2 (ja) * | 2003-02-17 | 2008-10-01 | キヤノンアネルバ株式会社 | 静電容量型圧力センサ及びその製造方法 |
US6928879B2 (en) * | 2003-02-26 | 2005-08-16 | Robert Bosch Gmbh | Episeal pressure sensor and method for making an episeal pressure sensor |
SE526366C3 (sv) * | 2003-03-21 | 2005-10-26 | Silex Microsystems Ab | Elektriska anslutningar i substrat |
JP2004356708A (ja) * | 2003-05-27 | 2004-12-16 | Hosiden Corp | 音響検出機構及びその製造方法 |
US6930368B2 (en) * | 2003-07-31 | 2005-08-16 | Hewlett-Packard Development Company, L.P. | MEMS having a three-wafer structure |
US7111518B1 (en) * | 2003-09-19 | 2006-09-26 | Silicon Microstructures, Inc. | Extremely low cost pressure sensor realized using deep reactive ion etching |
US20050172717A1 (en) | 2004-02-06 | 2005-08-11 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
JP2005233877A (ja) * | 2004-02-23 | 2005-09-02 | Alps Electric Co Ltd | 圧力センサ |
CN1314969C (zh) * | 2004-04-29 | 2007-05-09 | 中国科学院上海微系统与信息技术研究所 | 一种单硅片体微机械工艺实现的带静电自检测的加速度计 |
US7272954B2 (en) * | 2004-07-14 | 2007-09-25 | L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Proceded Georges Claude | Low temperature air separation process for producing pressurized gaseous product |
-
2007
- 2007-02-16 US US11/707,347 patent/US7539003B2/en active Active
- 2007-04-04 WO PCT/US2007/008599 patent/WO2007120576A2/en active Application Filing
- 2007-04-04 EP EP07755013.5A patent/EP2011132B1/en active Active
- 2007-04-04 JP JP2009505402A patent/JP5331678B2/ja active Active
- 2007-04-04 CN CN2007800178712A patent/CN101449347B/zh active Active
-
2013
- 2013-04-26 JP JP2013093834A patent/JP5806254B2/ja active Active
-
2015
- 2015-05-07 JP JP2015095070A patent/JP5956644B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012154784A (ja) * | 2011-01-26 | 2012-08-16 | Rohm Co Ltd | 静電容量型圧力センサおよび静電容量型圧力センサの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101449347A (zh) | 2009-06-03 |
JP5956644B2 (ja) | 2016-07-27 |
WO2007120576A2 (en) | 2007-10-25 |
CN101449347B (zh) | 2013-07-17 |
JP5806254B2 (ja) | 2015-11-10 |
JP2009533866A (ja) | 2009-09-17 |
JP2013198979A (ja) | 2013-10-03 |
JP2015180521A (ja) | 2015-10-15 |
WO2007120576A3 (en) | 2008-10-30 |
EP2011132A2 (en) | 2009-01-07 |
EP2011132B1 (en) | 2016-06-29 |
US20070279832A1 (en) | 2007-12-06 |
EP2011132A4 (en) | 2014-07-16 |
US7539003B2 (en) | 2009-05-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5956644B2 (ja) | 単結晶シリコン電極を備えた容量性微小電気機械式センサー | |
TWI813633B (zh) | 壓電微加工超音波傳感器裝置 | |
CN102173375B (zh) | 电子装置 | |
TWI419239B (zh) | 用於形成陀螺儀與加速度感測儀之方法和結構 | |
JP5350339B2 (ja) | 微小電気機械システムおよびその製造方法 | |
US20060237806A1 (en) | Micromachined microphone and multisensor and method for producing same | |
EP3052901B1 (en) | Inertial and pressure sensors on single chip | |
JP2008229833A (ja) | 半導体装置およびその製造方法 | |
JP2012225920A (ja) | マイクロ−電子機械システム(mems)デバイス | |
JP2008046078A (ja) | 微小電気機械システム素子およびその製造方法 | |
JP2006247833A (ja) | Mems素子パッケージ及びその製造方法 | |
US20130100779A1 (en) | Acoustic sensor and fabrication method thereof | |
JP2010153406A (ja) | 半導体装置およびその製造方法 | |
WO2015042701A1 (en) | Mems device including an electrode guard ring and method of manufacturing the same | |
JP2023510319A (ja) | ソリッドステート半導体プロセスのbeol程金属層を使用して構築されたmemsデバイス | |
JP2011038780A (ja) | 半導体装置及び半導体装置の製造方法 | |
JP5837286B2 (ja) | 半導体基板のエッチング方法および静電容量型memsセンサの製造方法 | |
JP6464770B2 (ja) | 物理量センサおよびその製造方法 | |
JP2012127692A (ja) | Memsセンサおよびその製造方法、ならびにmemsパッケージ | |
JP2014018871A (ja) | プロセスモニター素子、およびmems素子の製造方法 | |
JPH07225243A (ja) | 加速度センサ及びその製造方法、当該加速度センサによる加速度検出方法、並びに加速度センサアレイ | |
JP2012127691A (ja) | Memsセンサおよびその製造方法、ならびにmemsパッケージ | |
JP2009115499A (ja) | 物理量センサ及びその製造方法 | |
JP2010114215A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100331 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121127 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130213 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130220 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20130225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130226 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130325 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130401 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130426 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130716 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130729 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5331678 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |