JP5329784B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5329784B2
JP5329784B2 JP2007214664A JP2007214664A JP5329784B2 JP 5329784 B2 JP5329784 B2 JP 5329784B2 JP 2007214664 A JP2007214664 A JP 2007214664A JP 2007214664 A JP2007214664 A JP 2007214664A JP 5329784 B2 JP5329784 B2 JP 5329784B2
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layer
laser beam
light
light absorption
electrode layer
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Expired - Fee Related
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JP2007214664A
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English (en)
Japanese (ja)
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JP2008078634A5 (enrdf_load_stackoverflow
JP2008078634A (ja
Inventor
秀和 宮入
安弘 神保
栄二 比嘉
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007214664A 2006-08-25 2007-08-21 半導体装置の作製方法 Expired - Fee Related JP5329784B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007214664A JP5329784B2 (ja) 2006-08-25 2007-08-21 半導体装置の作製方法

Applications Claiming Priority (3)

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JP2006229777 2006-08-25
JP2006229777 2006-08-25
JP2007214664A JP5329784B2 (ja) 2006-08-25 2007-08-21 半導体装置の作製方法

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JP2008078634A JP2008078634A (ja) 2008-04-03
JP2008078634A5 JP2008078634A5 (enrdf_load_stackoverflow) 2010-08-26
JP5329784B2 true JP5329784B2 (ja) 2013-10-30

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100071765A1 (en) * 2008-09-19 2010-03-25 Peter Cousins Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer
CN103123443B (zh) * 2008-10-14 2014-11-26 旭化成电子材料株式会社 热反应型抗蚀剂材料、使用它的热光刻用层压体以及使用它们的模具的制造方法
US8168961B2 (en) * 2008-11-26 2012-05-01 Fei Company Charged particle beam masking for laser ablation micromachining
JP5382418B2 (ja) * 2009-01-28 2014-01-08 ソニー株式会社 回路基板およびその製造方法、タッチパネルならびに表示装置
JP5429454B2 (ja) * 2009-04-17 2014-02-26 ソニー株式会社 薄膜トランジスタの製造方法および薄膜トランジスタ
US8940572B2 (en) * 2009-04-21 2015-01-27 Tetrasun, Inc. Method for forming structures in a solar cell
US12041842B2 (en) 2018-07-02 2024-07-16 Jdi Design And Development G.K. Display panel patterning device
JP7117773B2 (ja) * 2018-09-07 2022-08-15 株式会社Joled 表示パネル製造装置および表示パネル製造方法
IT201900006740A1 (it) * 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di strutturazione di substrati
CN112436821B (zh) * 2020-09-30 2025-06-03 华景传感科技（无锡）有限公司 一种射频滤波器及其制作方法
CN114171641B (zh) * 2021-11-30 2024-05-31 北京燕东微电子科技有限公司 氧化钒薄膜的刻蚀方法与半导体器件的制造方法

Family Cites Families (16)

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JPS5119975A (en) * 1974-08-12 1976-02-17 Fujitsu Ltd Kibanjoheno pataanno sentakukeiseiho
JPS53117428A (en) * 1977-03-23 1978-10-13 Mitsubishi Electric Corp Recording method for information signal
JPS5688319A (en) * 1979-12-19 1981-07-17 Mitsubishi Electric Corp Method for forming film pattern
JPS5739534A (en) * 1980-08-21 1982-03-04 Seiko Epson Corp Manufacture of semiconductor device
JPS5848920A (ja) * 1981-09-18 1983-03-23 Hitachi Ltd 半導体装置の製造方法
JPH06140422A (ja) * 1992-10-26 1994-05-20 Sony Corp 電界効果トランジスタの製造方法
JPH0829986A (ja) * 1994-07-13 1996-02-02 Hitachi Ltd パターン形成方法
JP3831981B2 (ja) * 1996-07-05 2006-10-11 大日本インキ化学工業株式会社 エキシマレーザーアブレーション用レジスト材
JP2000349301A (ja) * 1999-04-01 2000-12-15 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2004221562A (ja) * 2002-12-26 2004-08-05 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子の製造方法、該製造方法により製造した有機薄膜トランジスタ素子、及び有機薄膜トランジスタ素子シート
JP4712352B2 (ja) * 2003-11-14 2011-06-29 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4299642B2 (ja) * 2003-11-26 2009-07-22 積水化学工業株式会社 パターン形成方法
JP4884675B2 (ja) * 2004-01-26 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4854994B2 (ja) * 2004-06-28 2012-01-18 株式会社半導体エネルギー研究所 配線基板の作製方法及び薄膜トランジスタの作製方法
JP4584075B2 (ja) * 2004-08-31 2010-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101074389B1 (ko) * 2004-11-05 2011-10-17 엘지디스플레이 주식회사 박막 식각 방법 및 이를 이용한 액정표시장치의 제조방법

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