JP5329520B2 - 低角度で入射する補正光を用いる補正光学素子 - Google Patents
低角度で入射する補正光を用いる補正光学素子 Download PDFInfo
- Publication number
- JP5329520B2 JP5329520B2 JP2010500260A JP2010500260A JP5329520B2 JP 5329520 B2 JP5329520 B2 JP 5329520B2 JP 2010500260 A JP2010500260 A JP 2010500260A JP 2010500260 A JP2010500260 A JP 2010500260A JP 5329520 B2 JP5329520 B2 JP 5329520B2
- Authority
- JP
- Japan
- Prior art keywords
- optical
- correction light
- mirror
- optical element
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
- G02B27/0068—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration having means for controlling the degree of correction, e.g. using phase modulators, movable elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
- G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
- G02B7/028—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/293—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection by another light beam, i.e. opto-optical deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Nonlinear Science (AREA)
- Toxicology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007014699.1 | 2007-03-27 | ||
| DE102007014699 | 2007-03-27 | ||
| PCT/EP2008/053577 WO2008116886A1 (de) | 2007-03-27 | 2008-03-26 | Korrektur optischer elemente mittels flach eingestrahltem korrekturlicht |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010522977A JP2010522977A (ja) | 2010-07-08 |
| JP2010522977A5 JP2010522977A5 (enExample) | 2011-04-07 |
| JP5329520B2 true JP5329520B2 (ja) | 2013-10-30 |
Family
ID=39645288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010500260A Active JP5329520B2 (ja) | 2007-03-27 | 2008-03-26 | 低角度で入射する補正光を用いる補正光学素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US8760744B2 (enExample) |
| JP (1) | JP5329520B2 (enExample) |
| KR (1) | KR101492287B1 (enExample) |
| DE (1) | DE102008016011A1 (enExample) |
| WO (1) | WO2008116886A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5329520B2 (ja) * | 2007-03-27 | 2013-10-30 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 低角度で入射する補正光を用いる補正光学素子 |
| US20100290020A1 (en) * | 2009-05-15 | 2010-11-18 | Shinichi Mori | Optical apparatus, exposure apparatus, exposure method, and method for producing device |
| DE102010041298A1 (de) | 2010-09-24 | 2012-03-29 | Carl Zeiss Smt Gmbh | EUV-Mikrolithographie-Projektionsbelichtungsanlage mit einer Heizlichtquelle |
| DE102012216284A1 (de) * | 2011-09-27 | 2013-03-28 | Carl Zeiss Smt Gmbh | Mikrolithographische Projektionsbelichtungsanlage |
| DE102011088740A1 (de) * | 2011-12-15 | 2013-01-17 | Carl Zeiss Smt Gmbh | Optisches System, sowie Verfahren zum Manipulieren des thermischen Zustandes eines optischen Elementes in einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102014203189A1 (de) * | 2014-02-21 | 2015-08-27 | Carl Zeiss Smt Gmbh | Spiegel-Array |
| US9823573B2 (en) | 2015-07-02 | 2017-11-21 | Applied Materials, Inc. | Correction of non-uniform patterns using time-shifted exposures |
| DE102016213025A1 (de) | 2016-07-18 | 2016-09-08 | Carl Zeiss Smt Gmbh | Steuerung für Mikrospiegelanordnungen in Lithographiesystemen |
| JP6827785B2 (ja) | 2016-11-30 | 2021-02-10 | キヤノン株式会社 | インプリント装置、インプリント方法、および物品の製造方法 |
| US11079564B2 (en) | 2017-07-20 | 2021-08-03 | Cymer, Llc | Methods and apparatuses for aligning and diagnosing a laser beam |
| DE102021102254A1 (de) * | 2021-02-01 | 2022-08-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische anordnung |
| DE102021201689A1 (de) * | 2021-02-23 | 2022-08-25 | Carl Zeiss Smt Gmbh | Optische Baugruppe, Verfahren zur Deformation eines optischen Elements und Projektionsbelichtungsanlage |
| DE102022212570A1 (de) | 2022-11-24 | 2023-12-14 | Carl Zeiss Smt Gmbh | Heizvorrichtung und optisches System, insbesondere EUV-Lithographiesystem |
Family Cites Families (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2077572C (en) | 1991-09-07 | 1998-08-18 | Masahito Niibe | Method of and apparatus for stabilizing shapes of objects, such as optical elements, as well as exposure apparatus using same and method of manufacturing semiconductr devices |
| JPH06302491A (ja) * | 1993-04-15 | 1994-10-28 | Nikon Corp | 露光量制御装置 |
| JP3463335B2 (ja) | 1994-02-17 | 2003-11-05 | 株式会社ニコン | 投影露光装置 |
| US5995263A (en) | 1993-11-12 | 1999-11-30 | Nikon Corporation | Projection exposure apparatus |
| JP3368091B2 (ja) | 1994-04-22 | 2003-01-20 | キヤノン株式会社 | 投影露光装置及びデバイスの製造方法 |
| JPH0845827A (ja) | 1994-07-28 | 1996-02-16 | Canon Inc | 投影露光装置及びそれを用いた半導体デバイスの製造方法 |
| JP3576685B2 (ja) * | 1996-02-07 | 2004-10-13 | キヤノン株式会社 | 露光装置及びそれを用いたデバイスの製造方法 |
| JPH09232213A (ja) * | 1996-02-26 | 1997-09-05 | Nikon Corp | 投影露光装置 |
| EP0816894A3 (en) * | 1996-07-01 | 1999-01-20 | Seiko Epson Corporation | Optical scanning apparatus |
| EP0823662A2 (en) | 1996-08-07 | 1998-02-11 | Nikon Corporation | Projection exposure apparatus |
| JP3790833B2 (ja) | 1996-08-07 | 2006-06-28 | 株式会社ニコン | 投影露光方法及び装置 |
| JP3646757B2 (ja) | 1996-08-22 | 2005-05-11 | 株式会社ニコン | 投影露光方法及び装置 |
| US5852490A (en) | 1996-09-30 | 1998-12-22 | Nikon Corporation | Projection exposure method and apparatus |
| JPH10256150A (ja) | 1997-03-14 | 1998-09-25 | Nikon Corp | 走査露光方法及び走査型露光装置 |
| US6091461A (en) * | 1997-08-14 | 2000-07-18 | Sony Corporation | Electronically self-aligning high resolution projection display with rotating mirrors and piezoelectric transducers |
| KR100597775B1 (ko) * | 1997-12-26 | 2006-07-10 | 가부시키가이샤 니콘 | 투영노광장치 및 노광방법 |
| US7274430B2 (en) | 1998-02-20 | 2007-09-25 | Carl Zeiss Smt Ag | Optical arrangement and projection exposure system for microlithography with passive thermal compensation |
| JP4106478B2 (ja) * | 1998-03-06 | 2008-06-25 | 株式会社オーク製作所 | 多ビーム走査型露光装置 |
| US7112772B2 (en) | 1998-05-29 | 2006-09-26 | Carl Zeiss Smt Ag | Catadioptric projection objective with adaptive mirror and projection exposure method |
| DE19827602A1 (de) | 1998-06-20 | 1999-12-23 | Zeiss Carl Fa | Verfahren zur Korrektur nicht-rotationssymmetrischer Bildfehler |
| DE19827603A1 (de) | 1998-06-20 | 1999-12-23 | Zeiss Carl Fa | Optisches System, insbesondere Projektions-Belichtungsanlage der Mikrolithographie |
| DE19859634A1 (de) | 1998-12-23 | 2000-06-29 | Zeiss Carl Fa | Optisches System, insbesondere Projektionsbelichtungsanlage der Mikrolithographie |
| JP3548464B2 (ja) | 1999-09-01 | 2004-07-28 | キヤノン株式会社 | 露光方法及び走査型露光装置 |
| DE19956354B4 (de) | 1999-11-24 | 2004-02-19 | Carl Zeiss | Verfahren zum Ausgleich von nicht rotationssymmetrischen Abbildungsfehlern in einem optischen System |
| DE19956353C1 (de) | 1999-11-24 | 2001-08-09 | Zeiss Carl | Optische Anordnung |
| DE19963587B4 (de) | 1999-12-29 | 2007-10-04 | Carl Zeiss Smt Ag | Projektions-Belichtungsanlage |
| DE19963588C2 (de) | 1999-12-29 | 2002-01-10 | Zeiss Carl | Optische Anordnung |
| DE10000193B4 (de) | 2000-01-05 | 2007-05-03 | Carl Zeiss Smt Ag | Optisches System |
| DE10000191B8 (de) * | 2000-01-05 | 2005-10-06 | Carl Zeiss Smt Ag | Projektbelichtungsanlage der Mikrolithographie |
| AU2002224066A1 (en) * | 2000-11-22 | 2002-06-03 | Nikon Corporation | Aligner, aligning method and method for fabricating device |
| DE10140208C2 (de) | 2001-08-16 | 2003-11-06 | Zeiss Carl | Optische Anordnung |
| DE10143385C2 (de) * | 2001-09-05 | 2003-07-17 | Zeiss Carl | Projektionsbelichtungsanlage |
| JP2005508520A (ja) | 2001-11-09 | 2005-03-31 | カール・ツァイス・エスエムティー・アーゲー | 傾斜調節ミラー |
| US6984917B2 (en) * | 2002-06-06 | 2006-01-10 | Lucent Technologies Inc. | Optical element having two axes of rotation for use in tightly spaced mirror arrays |
| US20050099611A1 (en) | 2002-06-20 | 2005-05-12 | Nikon Corporation | Minimizing thermal distortion effects on EUV mirror |
| US20030235682A1 (en) * | 2002-06-21 | 2003-12-25 | Sogard Michael R. | Method and device for controlling thermal distortion in elements of a lithography system |
| DE10325461A1 (de) * | 2003-06-05 | 2004-12-30 | Carl Zeiss Sms Gmbh | Verfahren und Anordnung zur Realisierung einer schaltbaren optischen Apertur |
| EP1670041A4 (en) | 2003-08-28 | 2007-10-17 | Nikon Corp | METHOD AND APPARATUS FOR EXPOSURE, AND METHOD FOR MANUFACTURING ASSOCIATED DEVICE |
| JP4588635B2 (ja) * | 2003-09-26 | 2010-12-01 | カール・ツァイス・エスエムティー・アーゲー | マイクロリソグラフィ照明方法及びその方法を実行するための投影照明系 |
| KR101328356B1 (ko) | 2004-02-13 | 2013-11-11 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
| JP5266641B2 (ja) | 2004-08-31 | 2013-08-21 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| JP2006073584A (ja) * | 2004-08-31 | 2006-03-16 | Nikon Corp | 露光装置及び方法並びにデバイス製造方法 |
| JP2006128194A (ja) * | 2004-10-26 | 2006-05-18 | Canon Inc | 露光装置及びデバイス製造方法 |
| US20080204682A1 (en) | 2005-06-28 | 2008-08-28 | Nikon Corporation | Exposure method and exposure apparatus, and device manufacturing method |
| JP5329520B2 (ja) * | 2007-03-27 | 2013-10-30 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 低角度で入射する補正光を用いる補正光学素子 |
| WO2009152959A1 (en) | 2008-06-17 | 2009-12-23 | Carl Zeiss Smt Ag | Projection exposure apparatus for semiconductor lithography comprising a device for the thermal manipulation of an optical element |
| US20100290020A1 (en) | 2009-05-15 | 2010-11-18 | Shinichi Mori | Optical apparatus, exposure apparatus, exposure method, and method for producing device |
| DE102010041528A1 (de) | 2010-09-28 | 2012-03-29 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit |
| DE102011004375B3 (de) | 2011-02-18 | 2012-05-31 | Carl Zeiss Smt Gmbh | Vorrichtung zur Führung von elektromagnetischer Strahlung in eine Projektionsbelichtungsanlage |
| JP5863974B2 (ja) | 2011-09-29 | 2016-02-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の投影対物レンズ |
-
2008
- 2008-03-26 JP JP2010500260A patent/JP5329520B2/ja active Active
- 2008-03-26 WO PCT/EP2008/053577 patent/WO2008116886A1/de not_active Ceased
- 2008-03-26 KR KR1020097022341A patent/KR101492287B1/ko active Active
- 2008-03-26 DE DE102008016011A patent/DE102008016011A1/de not_active Withdrawn
-
2009
- 2009-09-23 US US12/565,481 patent/US8760744B2/en active Active
-
2013
- 2013-11-13 US US14/079,124 patent/US8811568B2/en active Active
-
2014
- 2014-07-31 US US14/448,046 patent/US9366857B2/en active Active
-
2016
- 2016-05-19 US US15/158,983 patent/US10054786B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10054786B2 (en) | 2018-08-21 |
| US8811568B2 (en) | 2014-08-19 |
| KR20100015913A (ko) | 2010-02-12 |
| JP2010522977A (ja) | 2010-07-08 |
| US20150062682A1 (en) | 2015-03-05 |
| US20160259161A1 (en) | 2016-09-08 |
| US20140078567A1 (en) | 2014-03-20 |
| US8760744B2 (en) | 2014-06-24 |
| DE102008016011A1 (de) | 2008-10-02 |
| US9366857B2 (en) | 2016-06-14 |
| WO2008116886A1 (de) | 2008-10-02 |
| US20100060988A1 (en) | 2010-03-11 |
| KR101492287B1 (ko) | 2015-02-11 |
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